页 1984 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
MT49H32M18CFM-18:B TR	Micron Technology Inc.	IC RLDRAM 576MBIT 533MHZ 144UBGA Memory Type: Volatile Memory Format: DRAM Technology: DRAM Memory Size: 576Mb (32M x 18) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: 15ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-µBGA (18.5x11)	封装: 144-TFBGA	库存4,640	DRAM	DRAM	576Mb (32M x 18)	Parallel	533MHz	-	15ns	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-µBGA (18.5x11)
JS28F512P30EF0	Micron Technology Inc.	IC FLASH 512MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 40MHz Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP (14x20)	封装: 56-TFSOP (0.724", 18.40mm Width)	库存2,304	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	40MHz	110ns	110ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP (14x20)
CY7C1565V18-400BZC	Cypress Semiconductor Corp	IC SRAM 72MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 72Mb (2M x 36) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (15x17)	封装: 165-LBGA	库存7,696	SRAM	SRAM - Synchronous, QDR II	72Mb (2M x 36)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (15x17)
MT46V128M4BN-6:D TR	Micron Technology Inc.	IC SDRAM 512MBIT 167MHZ 60FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (128M x 4) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-FBGA (10x12.5)	封装: 60-TFBGA	库存2,960	DRAM	SDRAM - DDR	512Mb (128M x 4)	Parallel	167MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-FBGA (10x12.5)
DS1250YL-70	Maxim Integrated	IC NVSRAM 4MBIT 70NS 34LPM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 34-LPM Supplier Device Package: 34-LPM	封装: 34-LPM	库存5,712	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	34-LPM	34-LPM
AT27C1024-70PC	Microchip Technology	IC OTP 1MBIT 70NS 40DIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Through Hole Package / Case: 40-DIP (0.600", 15.24mm) Supplier Device Package: 40-PDIP	封装: 40-DIP (0.600", 15.24mm)	库存33,060	EPROM	EPROM - OTP	1Mb (64K x 16)	Parallel	-	-	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TC)	Through Hole	40-DIP (0.600", 15.24mm)	40-PDIP
7007S20PF8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 20NS 80TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封装: 80-LQFP	库存3,392	SRAM	SRAM - Dual Port, Asynchronous	256Kb (32K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
IS64VF12832A-7.5TQLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 4MBIT 7.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4Mb (128K x 32) Memory Interface: Parallel Clock Frequency: 117MHz Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 2.375 V ~ 2.625 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-LQFP (14x20)	封装: 100-LQFP	库存5,136	SRAM	SRAM - Synchronous	4Mb (128K x 32)	Parallel	117MHz	-	7.5ns	2.375 V ~ 2.625 V	-40°C ~ 125°C (TA)	Surface Mount	100-LQFP	100-LQFP (14x20)
IS45S16160G-7BLA2-TR	ISSI, Integrated Silicon Solution Inc	IC SDRAM 256MBIT 143MHZ 54BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 256Mb (16M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TFBGA Supplier Device Package: 54-TFBGA (8x8)	封装: 54-TFBGA	库存6,800	DRAM	SDRAM	256Mb (16M x 16)	Parallel	143MHz	-	5.4ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TFBGA	54-TFBGA (8x8)
IS64WV12816DBLL-12BLA3-TR	ISSI, Integrated Silicon Solution Inc	IC SRAM 2MBIT 12NS 48BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 2Mb (128K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 2.4 V ~ 3.6 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFBGA Supplier Device Package: 48-BGA (6x8)	封装: 48-TFBGA	库存4,048	SRAM	SRAM - Asynchronous	2Mb (128K x 16)	Parallel	-	12ns	12ns	2.4 V ~ 3.6 V	-40°C ~ 125°C (TA)	Surface Mount	48-TFBGA	48-BGA (6x8)
IS43TR16640AL-125JBL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: 96-TFBGA	库存4,480	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	15ns	20ns	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
W631GU6KB12I TR	Winbond Electronics	IC SDRAM 1GBIT 800MHZ 96BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gb (64M x 16) Memory Interface: Parallel Clock Frequency: 800MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-WBGA (9x13)	封装: 96-TFBGA	库存6,768	DRAM	SDRAM - DDR3L	1Gb (64M x 16)	Parallel	800MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-WBGA (9x13)
S29GL032N90BFI032	Cypress Semiconductor Corp	IC FLASH 32MBIT 90NS 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封装: 48-VFBGA	库存5,584	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	90ns	90ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
24FC128T-I/SN	Microchip Technology	IC EEPROM 128KBIT 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,176	EEPROM	EEPROM	128Kb (16K x 8)	I2C	1MHz	5ms	400ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AT25DN512C-XMHFGP-T	Adesto Technologies	IC FLASH 512KBIT 85MHZ 8TSSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 8µs, 1.75ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存3,328	FLASH	FLASH	512Kb (64K x 8)	SPI	104MHz	8µs, 1.75ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
11LC010-I/MS	Microchip Technology	IC EEPROM 1KBIT 100KHZ 8MSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存12,576	EEPROM	EEPROM	1Kb (128 x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
S70FS01GSAGBHB213	Cypress Semiconductor Corp	IC 1 GB FLASH MEMORY Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,056	-	-	-	-	-	-	-	-	-	-	-	-
CY62146GN30-45ZSXIT	Cypress Semiconductor Corp	IC SRAM 4M PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.2 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存5,456	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	45ns	45ns	2.2 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
AT28C256-15DM/883-815	Microchip Technology	IC EEPROM 256K PARALLEL 28CDIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TC) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Supplier Device Package: 28-CDIP	封装: 28-CDIP (0.600", 15.24mm)	库存7,168	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	10ms	150ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TC)	Through Hole	28-CDIP (0.600", 15.24mm)	28-CDIP
MTFC16GAKAEDQ-AIT	Micron Technology Inc.	IC FLASH 128G MMC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Gb (16G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-LBGA (14x18)	封装: 100-LBGA	库存6,096	FLASH	FLASH - NAND	128Gb (16G x 8)	MMC	-	-	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	Surface Mount	100-LBGA	100-LBGA (14x18)
IS43TR16640CL-107MBL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 1GBIT PAR 96TWBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 1Gbit Memory Interface: Parallel Clock Frequency: 933 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-TWBGA (9x13)	封装: -	Request a Quote	DRAM	SDRAM - DDR3L	1Gbit	Parallel	933 MHz	15ns	20 ns	1.283V ~ 1.45V	0°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-TWBGA (9x13)
S99-50542	Infineon Technologies	INFINEON Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S-24CS02AFT-TBH-U	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kbit Memory Interface: I2C Clock Frequency: 350 kHz Write Cycle Time - Word, Page: 10ms Access Time: 1 µs Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	Request a Quote	EEPROM	EEPROM	2Kbit	I2C	350 kHz	10ms	1 µs	1.8V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
HM1-65262B-9	Harris Corporation	IC SRAM 16KBIT PARALLEL 20CERDIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 16Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 20-CDIP (0.300", 7.62mm) Supplier Device Package: 20-CERDIP	封装: -	Request a Quote	SRAM	SRAM - Synchronous	16Kbit	Parallel	-	70ns	70 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Through Hole	20-CDIP (0.300", 7.62mm)	20-CERDIP
GD25Q128EYJGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 140µs, 4ms Access Time: 7 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	128Mbit	SPI - Quad I/O	133 MHz	140µs, 4ms	7 ns	2.7V ~ 3.6V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MT60B2G8RZ-56B-IT-D	Micron Technology Inc.	DDR5 16G 2GX8 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR5 Memory Size: 16Gbit Memory Interface: POD Clock Frequency: 2.8 GHz Write Cycle Time - Word, Page: - Access Time: 16 ns Voltage - Supply: - Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-VFBGA Supplier Device Package: 78-FBGA (7.5x11)	封装: -	Request a Quote	DRAM	SDRAM - DDR5	16Gbit	POD	2.8 GHz	-	16 ns	-	-40°C ~ 95°C (TC)	Surface Mount	78-VFBGA	78-FBGA (7.5x11)
EMMC32G-TX29-8AD11	Kingston Technology	IC FLASH 256GBIT EMMC 153WFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 256Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.8V, 3.3V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-WFBGA Supplier Device Package: 153-WFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	256Gbit	eMMC	-	-	-	1.8V, 3.3V	-25°C ~ 85°C	Surface Mount	153-WFBGA	153-WFBGA (11.5x13)
S-24CS01AFT-TBH-U	ABLIC Inc.	LINEAR IC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kbit Memory Interface: I2C Clock Frequency: 350 kHz Write Cycle Time - Word, Page: 10ms Access Time: 1 µs Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: -	Request a Quote	EEPROM	EEPROM	1Kbit	I2C	350 kHz	10ms	1 µs	1.8V ~ 5.5V	-40°C ~ 105°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
R1QAA7236ABB-20IA0	Renesas Electronics Corporation	STANDARD SRAM, 2MX36, 0.45NS Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
MT53E256M32D2FW-046-AAT-B-TR	Micron Technology Inc.	LPDDR4 8G 256MX32 FBGA DDP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.5 ns Voltage - Supply: 1.06V ~ 1.17V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-TFBGA Supplier Device Package: 200-TFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	8Gbit	Parallel	2.133 GHz	18ns	3.5 ns	1.06V ~ 1.17V	-40°C ~ 105°C (TC)	Surface Mount	200-TFBGA	200-TFBGA (10x14.5)

MT49H32M18CFM-18:B TR

Micron Technology Inc.

IC RLDRAM 576MBIT 533MHZ 144UBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: DRAM
Memory Size: 576Mb (32M x 18)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: 15ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-µBGA (18.5x11)

封装: 144-TFBGA

库存4,640

DRAM

576Mb (32M x 18)

Parallel

533MHz

-

15ns

1.7 V ~ 1.9 V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-µBGA (18.5x11)

JS28F512P30EF0

Micron Technology Inc.

IC FLASH 512MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 40MHz
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP (14x20)

封装: 56-TFSOP (0.724", 18.40mm Width)

库存2,304

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

40MHz

110ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP (14x20)

CY7C1565V18-400BZC

Cypress Semiconductor Corp

IC SRAM 72MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 72Mb (2M x 36)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (15x17)

封装: 165-LBGA

库存7,696

SRAM

SRAM - Synchronous, QDR II

72Mb (2M x 36)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (15x17)

MT46V128M4BN-6:D TR

Micron Technology Inc.

IC SDRAM 512MBIT 167MHZ 60FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (128M x 4)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-FBGA (10x12.5)

封装: 60-TFBGA

库存2,960

DRAM

SDRAM - DDR

512Mb (128M x 4)

Parallel

167MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-FBGA (10x12.5)

DS1250YL-70

Maxim Integrated

IC NVSRAM 4MBIT 70NS 34LPM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-LPM
Supplier Device Package: 34-LPM

封装: 34-LPM

库存5,712

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

34-LPM

AT27C1024-70PC

Microchip Technology

IC OTP 1MBIT 70NS 40DIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Through Hole
Package / Case: 40-DIP (0.600", 15.24mm)
Supplier Device Package: 40-PDIP

封装: 40-DIP (0.600", 15.24mm)

库存33,060

EPROM

EPROM - OTP

1Mb (64K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TC)

Through Hole

40-DIP (0.600", 15.24mm)

40-PDIP

7007S20PF8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 20NS 80TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封装: 80-LQFP

库存3,392

SRAM

SRAM - Dual Port, Asynchronous

256Kb (32K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

IS64VF12832A-7.5TQLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 7.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4Mb (128K x 32)
Memory Interface: Parallel
Clock Frequency: 117MHz
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 2.375 V ~ 2.625 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-LQFP (14x20)

封装: 100-LQFP

库存5,136

SRAM

SRAM - Synchronous

4Mb (128K x 32)

Parallel

117MHz

-

7.5ns

2.375 V ~ 2.625 V

-40°C ~ 125°C (TA)

Surface Mount

100-LQFP

100-LQFP (14x20)

IS45S16160G-7BLA2-TR

ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 143MHZ 54BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 256Mb (16M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TFBGA
Supplier Device Package: 54-TFBGA (8x8)

封装: 54-TFBGA

库存6,800

DRAM

SDRAM

256Mb (16M x 16)

Parallel

143MHz

-

5.4ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TFBGA

54-TFBGA (8x8)

IS64WV12816DBLL-12BLA3-TR

ISSI, Integrated Silicon Solution Inc

IC SRAM 2MBIT 12NS 48BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 2Mb (128K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 2.4 V ~ 3.6 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFBGA
Supplier Device Package: 48-BGA (6x8)

封装: 48-TFBGA

库存4,048

SRAM

SRAM - Asynchronous

2Mb (128K x 16)

Parallel

-

12ns

2.4 V ~ 3.6 V

-40°C ~ 125°C (TA)

Surface Mount

48-TFBGA

48-BGA (6x8)

IS43TR16640AL-125JBL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: 96-TFBGA

库存4,480

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

15ns

20ns

1.283 V ~ 1.45 V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

W631GU6KB12I TR

Winbond Electronics

IC SDRAM 1GBIT 800MHZ 96BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gb (64M x 16)
Memory Interface: Parallel
Clock Frequency: 800MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-WBGA (9x13)

封装: 96-TFBGA

库存6,768

DRAM

SDRAM - DDR3L

1Gb (64M x 16)

Parallel

800MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-WBGA (9x13)

S29GL032N90BFI032

Cypress Semiconductor Corp

IC FLASH 32MBIT 90NS 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封装: 48-VFBGA

库存5,584

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

90ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

24FC128T-I/SN

Microchip Technology

IC EEPROM 128KBIT 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,176

EEPROM

128Kb (16K x 8)

I2C

1MHz

5ms

400ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AT25DN512C-XMHFGP-T

Adesto Technologies

IC FLASH 512KBIT 85MHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 8µs, 1.75ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存3,328

FLASH

512Kb (64K x 8)

SPI

104MHz

8µs, 1.75ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

11LC010-I/MS

Microchip Technology

IC EEPROM 1KBIT 100KHZ 8MSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存12,576

EEPROM

1Kb (128 x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

S70FS01GSAGBHB213

Cypress Semiconductor Corp

IC 1 GB FLASH MEMORY

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,056

-

CY62146GN30-45ZSXIT

Cypress Semiconductor Corp

IC SRAM 4M PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.2 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存5,456

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

45ns

2.2 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

AT28C256-15DM/883-815

Microchip Technology

IC EEPROM 256K PARALLEL 28CDIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TC)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm)
Supplier Device Package: 28-CDIP

封装: 28-CDIP (0.600", 15.24mm)

库存7,168

EEPROM

256Kb (32K x 8)

Parallel

-

10ms

150ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TC)

Through Hole

28-CDIP (0.600", 15.24mm)

28-CDIP

MTFC16GAKAEDQ-AIT

Micron Technology Inc.

IC FLASH 128G MMC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Gb (16G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-LBGA (14x18)

封装: 100-LBGA

库存6,096

FLASH

FLASH - NAND

128Gb (16G x 8)

MMC

-

1.7 V ~ 1.9 V

-40°C ~ 85°C (TA)

Surface Mount

100-LBGA

100-LBGA (14x18)

IS43TR16640CL-107MBL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 1GBIT PAR 96TWBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 1Gbit
Memory Interface: Parallel
Clock Frequency: 933 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-TWBGA (9x13)

封装: -

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DRAM

SDRAM - DDR3L

1Gbit

Parallel

933 MHz

15ns

20 ns

1.283V ~ 1.45V

0°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-TWBGA (9x13)

S99-50542

Infineon Technologies

INFINEON

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S-24CS02AFT-TBH-U

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kbit
Memory Interface: I2C
Clock Frequency: 350 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 1 µs
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

Request a Quote

EEPROM

2Kbit

I2C

350 kHz

10ms

1 µs

1.8V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

HM1-65262B-9

Harris Corporation

IC SRAM 16KBIT PARALLEL 20CERDIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 16Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 20-CDIP (0.300", 7.62mm)
Supplier Device Package: 20-CERDIP

封装: -

Request a Quote

SRAM

SRAM - Synchronous

16Kbit

Parallel

-

70ns

70 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Through Hole

20-CDIP (0.300", 7.62mm)

20-CERDIP

GD25Q128EYJGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 140µs, 4ms
Access Time: 7 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

128Mbit

SPI - Quad I/O

133 MHz

140µs, 4ms

7 ns

2.7V ~ 3.6V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MT60B2G8RZ-56B-IT-D

Micron Technology Inc.

DDR5 16G 2GX8 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR5
Memory Size: 16Gbit
Memory Interface: POD
Clock Frequency: 2.8 GHz
Write Cycle Time - Word, Page: -
Access Time: 16 ns
Voltage - Supply: -
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-VFBGA
Supplier Device Package: 78-FBGA (7.5x11)

封装: -

Request a Quote

DRAM

SDRAM - DDR5

16Gbit

POD

2.8 GHz

-

16 ns

-

-40°C ~ 95°C (TC)

Surface Mount

78-VFBGA

78-FBGA (7.5x11)

EMMC32G-TX29-8AD11

Kingston Technology

IC FLASH 256GBIT EMMC 153WFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 256Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.8V, 3.3V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-WFBGA
Supplier Device Package: 153-WFBGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

256Gbit

eMMC

-

1.8V, 3.3V

-25°C ~ 85°C

Surface Mount

153-WFBGA

153-WFBGA (11.5x13)

S-24CS01AFT-TBH-U

ABLIC Inc.

LINEAR IC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kbit
Memory Interface: I2C
Clock Frequency: 350 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 1 µs
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: -

Request a Quote

EEPROM

1Kbit

I2C

350 kHz

10ms

1 µs

1.8V ~ 5.5V

-40°C ~ 105°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

R1QAA7236ABB-20IA0

Renesas Electronics Corporation

STANDARD SRAM, 2MX36, 0.45NS

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

MT53E256M32D2FW-046-AAT-B-TR

Micron Technology Inc.

LPDDR4 8G 256MX32 FBGA DDP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.5 ns
Voltage - Supply: 1.06V ~ 1.17V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-TFBGA
Supplier Device Package: 200-TFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

8Gbit

Parallel

2.133 GHz

18ns

3.5 ns

1.06V ~ 1.17V

-40°C ~ 105°C (TC)

Surface Mount

200-TFBGA

200-TFBGA (10x14.5)