页 1953 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-83210559
登入/注册
BOM
购物车 0

存储器

记录 62,144
页  1,953/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IS29GL512S-11TFV023
Cypress Semiconductor Corp

NOR

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 60ns
  • Access Time: 110ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,224
FLASH
FLASH - NOR
512Mb (64M x 8)
Parallel
-
60ns
110ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
-
-
-
IS42SM32800D-75BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SDRAM 256MBIT 133MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile
  • Memory Size: 256Mb (8M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 5.4ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存6,240
DRAM
SDRAM - Mobile
256Mb (8M x 32)
Parallel
133MHz
-
5.4ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
MT29E256G08CBHBBJ4-3ES:B
Micron Technology Inc.

IC FLASH 256GBIT 333MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 256Gb (32G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 333MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,496
FLASH
FLASH - NAND
256Gb (32G x 8)
Parallel
333MHz
-
-
2.5 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
M29W400FT55N3F TR
Micron Technology Inc.

IC FLASH 4MBIT 55NS 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 4Mb (512K x 8, 256K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 55ns
  • Access Time: 55ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP
封装: 48-TFSOP (0.724", 18.40mm Width)
库存5,136
FLASH
FLASH - NOR
4Mb (512K x 8, 256K x 16)
Parallel
-
55ns
55ns
2.7 V ~ 3.6 V
-40°C ~ 125°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP
MT29F64G08AECABJ1-10Z:A TR
Micron Technology Inc.

IC FLASH 64GBIT 100MHZ 132VBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Gb (8G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 132-VBGA
  • Supplier Device Package: 132-VBGA (12x18)
封装: 132-VBGA
库存7,360
FLASH
FLASH - NAND
64Gb (8G x 8)
Parallel
100MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
132-VBGA
132-VBGA (12x18)
CY7C1565KV18-450BZXI
Cypress Semiconductor Corp

IC SRAM 72MBIT 450MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 450MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封装: 165-LBGA
库存3,504
SRAM
SRAM - Synchronous, QDR II+
72Mb (2M x 36)
Parallel
450MHz
-
-
1.7 V ~ 1.9 V
-40°C ~ 85°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
CY14E256L-SZ45XCT
Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 32SOIC

  • Memory Type: Non-Volatile
  • Memory Format: NVSRAM
  • Technology: NVSRAM (Non-Volatile SRAM)
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 32-SOIC
封装: 32-SOIC (0.295", 7.50mm Width)
库存5,568
NVSRAM
NVSRAM (Non-Volatile SRAM)
256Kb (32K x 8)
Parallel
-
45ns
45ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TA)
Surface Mount
32-SOIC (0.295", 7.50mm Width)
32-SOIC
hot CY7C1265V18-400BZXC
Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II
  • Memory Size: 36Mb (1M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 400MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (15x17)
封装: 165-LBGA
库存4,192
SRAM
SRAM - Synchronous, QDR II
36Mb (1M x 36)
Parallel
400MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (15x17)
MT29F16G08MAAWP:A TR
Micron Technology Inc.

IC FLASH 16GBIT 48TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 16Gb (2G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 48-TSOP I
封装: 48-TFSOP (0.724", 18.40mm Width)
库存2,608
FLASH
FLASH - NAND
16Gb (2G x 8)
Parallel
-
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
48-TFSOP (0.724", 18.40mm Width)
48-TSOP I
hot AT27C010-15JC
Microchip Technology

IC OTP 1MBIT 150NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: EPROM
  • Technology: EPROM - OTP
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 150ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: 0°C ~ 70°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存6,660
EPROM
EPROM - OTP
1Mb (128K x 8)
Parallel
-
-
150ns
4.5 V ~ 5.5 V
0°C ~ 70°C (TC)
Surface Mount
32-LCC (J-Lead)
32-PLCC
CY7C2563XV18-633BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 633MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 633MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封装: 165-LBGA
库存6,144
SRAM
SRAM - Synchronous, QDR II+
72Mb (4M x 18)
Parallel
633MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
71256L100DB
IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 100NS 28CDIP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 100ns
  • Access Time: 100ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 28-CDIP (0.600", 15.24mm)
  • Supplier Device Package: 28-CerDip
封装: 28-CDIP (0.600", 15.24mm)
库存3,040
SRAM
SRAM - Asynchronous
256Kb (32K x 8)
Parallel
-
100ns
100ns
4.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Through Hole
28-CDIP (0.600", 15.24mm)
28-CerDip
25LC256T-M/MF
Microchip Technology

IC EEPROM 256KBIT 10MHZ 8DFN

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 256Kb (32K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 10MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 5.5 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-VDFN Exposed Pad
  • Supplier Device Package: 8-DFN-S (6x5)
封装: 8-VDFN Exposed Pad
库存7,680
EEPROM
EEPROM
256Kb (32K x 8)
SPI
10MHz
5ms
-
2.5 V ~ 5.5 V
-55°C ~ 125°C (TA)
Surface Mount
8-VDFN Exposed Pad
8-DFN-S (6x5)
CY62168G30-45BVXI
Cypress Semiconductor Corp

IC SRAM 16MBIT 45NS 48VFBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 45ns
  • Access Time: 45ns
  • Voltage - Supply: 2.2 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 48-VFBGA
  • Supplier Device Package: 48-VFBGA (6x8)
封装: 48-VFBGA
库存7,584
SRAM
SRAM - Asynchronous
16Mb (2M x 8)
Parallel
-
45ns
45ns
2.2 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
48-VFBGA
48-VFBGA (6x8)
S29GL064N90DAI033
Cypress Semiconductor Corp

IC FLASH 64MBIT 90NS 64BGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 64Mb (8M x 8, 4M x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 90ns
  • Access Time: 90ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 64-LBGA
  • Supplier Device Package: 64-Fortified BGA (9x9)
封装: 64-LBGA
库存2,416
FLASH
FLASH - NOR
64Mb (8M x 8, 4M x 16)
Parallel
-
90ns
90ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
64-LBGA
64-Fortified BGA (9x9)
FT24C08A-UDR-B
Fremont Micro Devices USA

IC EEPROM 8KBIT 1MHZ 8DIP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kb (1K x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.8 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: 8-DIP
封装: 8-DIP (0.300", 7.62mm)
库存21,384
EEPROM
EEPROM
8Kb (1K x 8)
I2C
1MHz
5ms
550ns
1.8 V ~ 5.5 V
-40°C ~ 85°C (TA)
Through Hole
8-DIP (0.300", 7.62mm)
8-DIP
CY7C15632KV18-450BZC
Cypress Semiconductor Corp

IC SRAM 72MBIT 450MHZ 165FBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (4M x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 450MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-LBGA
  • Supplier Device Package: 165-FBGA (13x15)
封装: 165-LBGA
库存7,104
SRAM
SRAM - Synchronous, QDR II+
72Mb (4M x 18)
Parallel
450MHz
-
-
1.7 V ~ 1.9 V
0°C ~ 70°C (TA)
Surface Mount
165-LBGA
165-FBGA (13x15)
AT24MAC602-XHM-T
Microchip Technology

IC EEPROM 2KBIT 1MHZ 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 2Kb (256 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 1MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 550ns
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: 8-TSSOP (0.173", 4.40mm Width)
库存3,920
EEPROM
EEPROM
2Kb (256 x 8)
I2C
1MHz
5ms
550ns
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
SST25WF040B-40I/SN
Microchip Technology

IC FLASH 4MBIT 40MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 40MHz
  • Write Cycle Time - Word, Page: 1ms
  • Access Time: -
  • Voltage - Supply: 1.65 V ~ 1.95 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存14,052
FLASH
FLASH
4Mb (512K x 8)
SPI
40MHz
1ms
-
1.65 V ~ 1.95 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
AT25SL321-UUE-T
Adesto Technologies

8-WLCSP,IND TEMP, 1.8V, T&R

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 32Mb (4M x 8)
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 104MHz
  • Write Cycle Time - Word, Page: 150µs, 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 2 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UFBGA, WLCSP
  • Supplier Device Package: 8-WLCSP (1.55x2.28)
封装: 8-UFBGA, WLCSP
库存5,712
FLASH
FLASH
32Mb (4M x 8)
SPI - Quad I/O, QPI
104MHz
150µs, 5ms
-
1.7 V ~ 2 V
-40°C ~ 85°C (TA)
Surface Mount
8-UFBGA, WLCSP
8-WLCSP (1.55x2.28)
BY25Q80ESTIG-R
BYTe Semiconductor

8 MBIT, 3.0V (2.7V TO 3.6V), -40

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 8Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 120 MHz
  • Write Cycle Time - Word, Page: 55µs, 2ms
  • Access Time: 7 ns
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOP
封装: -
Request a Quote
FLASH
FLASH - NOR (SLC)
8Mbit
SPI - Quad I/O
120 MHz
55µs, 2ms
7 ns
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOP
NDL16PFJ-9MET-TR
Insignis Technology Corporation

DDR3L 1GB X16 FBGA 8X13(X1.0) 18

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR3L
  • Memory Size: 1Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 933 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.283V ~ 1.45V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 96-VFBGA
  • Supplier Device Package: 96-FBGA (8x13)
封装: -
Request a Quote
DRAM
SDRAM - DDR3L
1Gbit
Parallel
933 MHz
-
-
1.283V ~ 1.45V
0°C ~ 95°C (TC)
Surface Mount
96-VFBGA
96-FBGA (8x13)
24CS512T-I-ST
Microchip Technology

IC EEPROM 512KBIT I2C 8TSSOP

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 3.4 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 400 ns
  • Voltage - Supply: 1.7V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
Request a Quote
EEPROM
EEPROM
512Kbit
I2C
3.4 MHz
5ms
400 ns
1.7V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
7130SA17PDG
Renesas Electronics Corporation

IC SRAM

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 8Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 17ns
  • Access Time: 17 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Through Hole
  • Package / Case: 48-DIP (0.600", 15.24mm)
  • Supplier Device Package: 48-PDIP
封装: -
Request a Quote
SRAM
SRAM - Dual Port, Asynchronous
8Kbit
Parallel
-
17ns
17 ns
4.5V ~ 5.5V
0°C ~ 70°C (TA)
Through Hole
48-DIP (0.600", 15.24mm)
48-PDIP
MT62F1536M64D8CL-023-WT-B-TR
Micron Technology Inc.

LPDDR5 96G 1.5GX64 FBGA 8DP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR5
  • Memory Size: 96Gbit
  • Memory Interface: Parallel
  • Clock Frequency: 4.266 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
DRAM
SDRAM - Mobile LPDDR5
96Gbit
Parallel
4.266 GHz
-
-
-
-
-
-
-
S25HS512TDPNHV010
Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 8WSON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 512Mbit
  • Memory Interface: SPI - Quad I/O, QPI
  • Clock Frequency: 133 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7V ~ 2V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-WDFN Exposed Pad
  • Supplier Device Package: 8-WSON (6x8)
封装: -
Request a Quote
FLASH
FLASH - NOR (SLC)
512Mbit
SPI - Quad I/O, QPI
133 MHz
-
-
1.7V ~ 2V
-40°C ~ 105°C (TA)
Surface Mount
8-WDFN Exposed Pad
8-WSON (6x8)
CAT25C08VGI
onsemi

IC EEPROM 8KBIT SPI 10MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 8Kbit
  • Memory Interface: SPI
  • Clock Frequency: 10 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 40 ns
  • Voltage - Supply: 2.5V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
EEPROM
EEPROM
8Kbit
SPI
10 MHz
5ms
40 ns
2.5V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
IS49RL36160A-093EBL
ISSI, Integrated Silicon Solution Inc

IC DRAM 576MBIT PAR 168FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: RLDRAM 3
  • Memory Size: 576Mbit
  • Memory Interface: Parallel
  • Clock Frequency: 1.066 GHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 7.5 ns
  • Voltage - Supply: 1.28V ~ 1.42V
  • Operating Temperature: 0°C ~ 95°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 168-LBGA
  • Supplier Device Package: 168-FBGA (13.5x13.5)
封装: -
库存357
DRAM
RLDRAM 3
576Mbit
Parallel
1.066 GHz
-
7.5 ns
1.28V ~ 1.42V
0°C ~ 95°C (TC)
Surface Mount
168-LBGA
168-FBGA (13.5x13.5)
W74M64FVSSIQ-TR
Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 64Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 80 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.209", 5.30mm Width)
  • Supplier Device Package: 8-SOIC
封装: -
Request a Quote
FLASH
FLASH - NAND
64Mbit
SPI - Quad I/O
80 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.209", 5.30mm Width)
8-SOIC
AM27S47A-BUA
Advanced Micro Devices

IC PROM 16KBIT PARALLEL 32CLCC

  • Memory Type: Non-Volatile
  • Memory Format: PROM
  • Technology: -
  • Memory Size: 16Kbit
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: 45 ns
  • Voltage - Supply: 4.5V ~ 5.5V
  • Operating Temperature: -55°C ~ 125°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 32-CLCC
  • Supplier Device Package: 32-CLCC
封装: -
Request a Quote
PROM
-
16Kbit
Parallel
-
-
45 ns
4.5V ~ 5.5V
-55°C ~ 125°C (TC)
Surface Mount
32-CLCC
32-CLCC