页 1938 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
M25PX32SOVZM6F TR	Micron Technology Inc.	IC FLASH 32MBIT 75MHZ 24TBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存4,272	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI	75MHz	15ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
IDT71V432S10PFG8	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 10NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1Mb (32K x 32) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 10ns Voltage - Supply: 3.135 V ~ 3.63 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存6,144	SRAM	SRAM - Synchronous	1Mb (32K x 32)	Parallel	-	-	10ns	3.135 V ~ 3.63 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71256SA15PZI8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 15NS 28TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP	封装: 28-TSSOP (0.465", 11.80mm Width)	库存5,264	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	15ns	15ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP
AT45DB011D-SH-B	Microchip Technology	IC FLASH 1MBIT 66MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (264 Bytes x 512 pages) Memory Interface: SPI Clock Frequency: 66MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存12,660	FLASH	FLASH	1Mb (264 Bytes x 512 pages)	SPI	66MHz	4ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
CYD02S36V-167BBC	Cypress Semiconductor Corp	IC SRAM 2MBIT 167MHZ 256FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 2Mb (64K x 36) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: 4.4ns Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-FBGA (17x17)	封装: 256-LBGA	库存2,976	SRAM	SRAM - Dual Port, Synchronous	2Mb (64K x 36)	Parallel	167MHz	-	4.4ns	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-FBGA (17x17)
MT48H16M32LFCM-75 IT:B TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封装: 90-VFBGA	库存7,344	DRAM	SDRAM - Mobile LPSDR	512Mb (16M x 32)	Parallel	133MHz	15ns	5.4ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
M27W256B-80F6	STMicroelectronics	IC EPROM UV 256KBIT 80NS 28CDIP Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - UV Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 80ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-CDIP (0.600", 15.24mm) Window Supplier Device Package: 28-CDIP Frit Seal with Window	封装: 28-CDIP (0.600", 15.24mm) Window	库存5,600	EPROM	EPROM - UV	256Kb (32K x 8)	Parallel	-	-	80ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Through Hole	28-CDIP (0.600", 15.24mm) Window	28-CDIP Frit Seal with Window
CY14B101NA-ZS45XIT	Cypress Semiconductor Corp	IC NVSRAM 1MBIT 45NS 44TSOP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存3,280	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (64K x 16)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
71V35761SA183BGGI	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 183MHZ 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 183MHz Write Cycle Time - Word, Page: - Access Time: 3.3ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存4,016	SRAM	SRAM - Synchronous	4.5Mb (128K x 36)	Parallel	183MHz	-	3.3ns	3.135 V ~ 3.465 V	-40°C ~ 85°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
MT28FW512ABA1LPC-0AAT TR	Micron Technology Inc.	IC FLASH 512MBIT 105NS 64LBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 105ns Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-LBGA (11x13)	封装: 64-LBGA	库存2,176	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	-	60ns	105ns	1.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	64-LBGA	64-LBGA (11x13)
CY7C1041GE-10ZSXIT	Cypress Semiconductor Corp	ASYNC SRAMS Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,512	SRAM	SRAM - Asynchronous	4Mb (256K x 16)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	-	-	-
FM25L16B-DG	Cypress Semiconductor Corp	IC FRAM 16KBIT 20MHZ 8TDFN Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 16Kb (2K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-TDFN (4x4.5)	封装: 8-VDFN Exposed Pad	库存5,376	FRAM	FRAM (Ferroelectric RAM)	16Kb (2K x 8)	SPI	20MHz	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-TDFN (4x4.5)
25LC512T-E/SN	Microchip Technology	IC EEPROM 512KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,528	EEPROM	EEPROM	512Kb (64K x 8)	SPI	20MHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
BR24L16-W	Rohm Semiconductor	IC EEPROM 16KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存61,404	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
MX25V8006EZNI-13G	Macronix	IC FLASH 8MBIT 75MHZ 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 300µs, 5ms Access Time: - Voltage - Supply: 2.35 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: 8-WDFN Exposed Pad	库存432,000	FLASH	FLASH - NOR	8Mb (1M x 8)	SPI	75MHz	300µs, 5ms	-	2.35 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
MT29F2T08CUCBBK9-37:B TR	Micron Technology Inc.	MLC 2T 256GX8 VLGA 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,024	-	-	-	-	-	-	-	-	-	-	-	-
MT41K256M8DA-107 AAT:K TR	Micron Technology Inc.	IC DRAM 2G PARALLEL 933MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 2Gb (256M x 8) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: - Access Time: 20ns Voltage - Supply: 1.283 V ~ 1.45 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (8x10.5)	封装: 78-TFBGA	库存5,968	DRAM	SDRAM - DDR3L	2Gb (256M x 8)	Parallel	933MHz	-	20ns	1.283 V ~ 1.45 V	-40°C ~ 105°C (TC)	Surface Mount	78-TFBGA	78-FBGA (8x10.5)
24FC01T-I/MS	Microchip Technology	1KB I2C EEPROM 1MHZ 1.7-5.5V 8-M Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: I²C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 450ns Voltage - Supply: 1.7V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: 8-MSOP	封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	库存2,880	EEPROM	EEPROM	1Kb (128 x 8)	I²C	1MHz	5ms	450ns	1.7V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	8-MSOP
93LC56CT-I/SN15KVAO	Microchip Technology	APG STANDARD Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8, 128 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 6ms Access Time: - Voltage - Supply: 2.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,408	EEPROM	EEPROM	2Kb (256 x 8, 128 x 16)	SPI	2MHz	6ms	-	2.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
AS4C256M16D3LB-10BIN	Alliance Memory, Inc.	4G DDR3 256MX16 1.35V 96-BALL FB Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3L Memory Size: 4Gb (256M x 16) Memory Interface: Parallel Clock Frequency: 933MHz Write Cycle Time - Word, Page: 15ns Access Time: 20ns Voltage - Supply: 1.283V ~ 1.45V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 96-TFBGA Supplier Device Package: 96-FBGA (9x13.5)	封装: 96-TFBGA	库存6,048	DRAM	SDRAM - DDR3L	4Gb (256M x 16)	Parallel	933MHz	15ns	20ns	1.283V ~ 1.45V	-40°C ~ 95°C (TC)	Surface Mount	96-TFBGA	96-FBGA (9x13.5)
NDB16PFC-4DIT	Insignis Technology Corporation	NDB16PFC-4DIT: DDR2 1GB X16 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR2 Memory Size: 1Gbit Memory Interface: SSTL_18 Clock Frequency: 400 MHz Write Cycle Time - Word, Page: 15ns Access Time: 450 ps Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 84-TFBGA Supplier Device Package: 84-FBGA (8x12.5)	封装: -	Request a Quote	DRAM	SDRAM - DDR2	1Gbit	SSTL_18	400 MHz	15ns	450 ps	1.7V ~ 1.9V	-40°C ~ 95°C (TC)	Surface Mount	84-TFBGA	84-FBGA (8x12.5)
TE28F008BVT90	Intel	IC FLASH 8MBIT PARALLEL 40TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - Boot Block Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 90ns Access Time: 90 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 40-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 40-TSOP	封装: -	Request a Quote	FLASH	FLASH - Boot Block	8Mbit	Parallel	-	90ns	90 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	40-TFSOP (0.724", 18.40mm Width)	40-TSOP
W66BQ2NQUAFJ-TR	Winbond Electronics	2GB LPDDR4X, DDP, X32, 1600MHZ, Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4X Memory Size: 2Gbit Memory Interface: LVSTL_06 Clock Frequency: 1.6 GHz Write Cycle Time - Word, Page: 18ns Access Time: 3.6 ns Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR4X	2Gbit	LVSTL_06	1.6 GHz	18ns	3.6 ns	1.06V ~ 1.17V, 1.7V ~ 1.95V	-40°C ~ 105°C (TC)	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
W25Q64JVSFSM	Winbond Electronics	IC FLASH 64MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR	64Mbit	SPI - Quad I/O	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
UPD44647366AF5-E22-FQ1-A	Renesas Electronics Corporation	IC SRAM 72MBIT PARALLEL 165PBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II+ Memory Size: 72Mbit Memory Interface: Parallel Clock Frequency: 450 MHz Write Cycle Time - Word, Page: 2.2ns Access Time: - Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-PBGA (13x15)	封装: -	Request a Quote	SRAM	SRAM - Synchronous, QDR II+	72Mbit	Parallel	450 MHz	2.2ns	-	1.7V ~ 1.9V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-PBGA (13x15)
SM671PED-AFST	Silicon Motion, Inc.	IC FLASH 1TBIT UFS3.1 153BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 1Tbit Memory Interface: UFS3.1 Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-BGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	1Tbit	UFS3.1	-	-	-	-	-40°C ~ 85°C	Surface Mount	153-TFBGA	153-BGA (11.5x13)
MT62F2G32D4DS-023-WT-ES-B-TR	Micron Technology Inc.	LPDDR5 64G 2GX32 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 64Gbit Memory Interface: Parallel Clock Frequency: 2.133 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	64Gbit	Parallel	2.133 GHz	-	-	1.05V	-25°C ~ 85°C	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
MTFC32GASAONS-AIT-TR	Micron Technology Inc.	USSD 256G Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (SLC) Memory Size: 256Gbit Memory Interface: UFS2.1 Clock Frequency: 52 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 153-TFBGA Supplier Device Package: 153-TFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (SLC)	256Gbit	UFS2.1	52 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 95°C (TC)	Surface Mount	153-TFBGA	153-TFBGA (11.5x13)
MTFC64GBCAQTC-AAT	Micron Technology Inc.	MM20F EMMC 512GBIT 153/196 LFBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存486	-	-	-	-	-	-	-	-	-	-	-	-
M3004316045NX0PBCY	Renesas Electronics Corporation	M3004316 MRAM PARALLEL 4MB X16 3 Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 484-BGA Supplier Device Package: 484-CABGA (23x23)	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	4Mbit	Parallel	-	45ns	45 ns	2.7V ~ 3.6V	-40°C ~ 105°C	Surface Mount	484-BGA	484-CABGA (23x23)

M25PX32SOVZM6F TR

Micron Technology Inc.

IC FLASH 32MBIT 75MHZ 24TBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存4,272

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI

75MHz

15ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

IDT71V432S10PFG8

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 10NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1Mb (32K x 32)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 10ns
Voltage - Supply: 3.135 V ~ 3.63 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存6,144

SRAM

SRAM - Synchronous

1Mb (32K x 32)

Parallel

-

10ns

3.135 V ~ 3.63 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71256SA15PZI8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 15NS 28TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP

封装: 28-TSSOP (0.465", 11.80mm Width)

库存5,264

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

15ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP

AT45DB011D-SH-B

Microchip Technology

IC FLASH 1MBIT 66MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (264 Bytes x 512 pages)
Memory Interface: SPI
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存12,660

FLASH

1Mb (264 Bytes x 512 pages)

SPI

66MHz

4ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

CYD02S36V-167BBC

Cypress Semiconductor Corp

IC SRAM 2MBIT 167MHZ 256FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 2Mb (64K x 36)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: 4.4ns
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-FBGA (17x17)

封装: 256-LBGA

库存2,976

SRAM

SRAM - Dual Port, Synchronous

2Mb (64K x 36)

Parallel

167MHz

-

4.4ns

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-FBGA (17x17)

MT48H16M32LFCM-75 IT:B TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封装: 90-VFBGA

库存7,344

DRAM

SDRAM - Mobile LPSDR

512Mb (16M x 32)

Parallel

133MHz

15ns

5.4ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

M27W256B-80F6

STMicroelectronics

IC EPROM UV 256KBIT 80NS 28CDIP

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - UV
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 80ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-CDIP (0.600", 15.24mm) Window
Supplier Device Package: 28-CDIP Frit Seal with Window

封装: 28-CDIP (0.600", 15.24mm) Window

库存5,600

EPROM

EPROM - UV

256Kb (32K x 8)

Parallel

-

80ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Through Hole

28-CDIP (0.600", 15.24mm) Window

28-CDIP Frit Seal with Window

CY14B101NA-ZS45XIT

Cypress Semiconductor Corp

IC NVSRAM 1MBIT 45NS 44TSOP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存3,280

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (64K x 16)

Parallel

-

45ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

71V35761SA183BGGI

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 183MHZ 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 183MHz
Write Cycle Time - Word, Page: -
Access Time: 3.3ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存4,016

SRAM

SRAM - Synchronous

4.5Mb (128K x 36)

Parallel

183MHz

-

3.3ns

3.135 V ~ 3.465 V

-40°C ~ 85°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

MT28FW512ABA1LPC-0AAT TR

Micron Technology Inc.

IC FLASH 512MBIT 105NS 64LBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 105ns
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)

封装: 64-LBGA

库存2,176

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

-

60ns

105ns

1.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

64-LBGA

64-LBGA (11x13)

CY7C1041GE-10ZSXIT

Cypress Semiconductor Corp

ASYNC SRAMS

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,512

SRAM

SRAM - Asynchronous

4Mb (256K x 16)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

-

FM25L16B-DG

Cypress Semiconductor Corp

IC FRAM 16KBIT 20MHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 16Kb (2K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-TDFN (4x4.5)

封装: 8-VDFN Exposed Pad

库存5,376

FRAM

FRAM (Ferroelectric RAM)

16Kb (2K x 8)

SPI

20MHz

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-TDFN (4x4.5)

25LC512T-E/SN

Microchip Technology

IC EEPROM 512KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,528

EEPROM

512Kb (64K x 8)

SPI

20MHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

BR24L16-W

Rohm Semiconductor

IC EEPROM 16KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存61,404

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

MX25V8006EZNI-13G

Macronix

IC FLASH 8MBIT 75MHZ 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 300µs, 5ms
Access Time: -
Voltage - Supply: 2.35 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: 8-WDFN Exposed Pad

库存432,000

FLASH

FLASH - NOR

8Mb (1M x 8)

SPI

75MHz

300µs, 5ms

-

2.35 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

MT29F2T08CUCBBK9-37:B TR

Micron Technology Inc.

MLC 2T 256GX8 VLGA 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,024

-

MT41K256M8DA-107 AAT:K TR

Micron Technology Inc.

IC DRAM 2G PARALLEL 933MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 2Gb (256M x 8)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: -
Access Time: 20ns
Voltage - Supply: 1.283 V ~ 1.45 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (8x10.5)

封装: 78-TFBGA

库存5,968

DRAM

SDRAM - DDR3L

2Gb (256M x 8)

Parallel

933MHz

-

20ns

1.283 V ~ 1.45 V

-40°C ~ 105°C (TC)

Surface Mount

78-TFBGA

78-FBGA (8x10.5)

24FC01T-I/MS

Microchip Technology

1KB I2C EEPROM 1MHZ 1.7-5.5V 8-M

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: I²C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 450ns
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: 8-MSOP

封装: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

库存2,880

EEPROM

1Kb (128 x 8)

I²C

1MHz

5ms

450ns

1.7V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

8-MSOP

93LC56CT-I/SN15KVAO

Microchip Technology

APG STANDARD

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8, 128 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 6ms
Access Time: -
Voltage - Supply: 2.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,408

EEPROM

2Kb (256 x 8, 128 x 16)

SPI

2MHz

6ms

-

2.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

AS4C256M16D3LB-10BIN

Alliance Memory, Inc.

4G DDR3 256MX16 1.35V 96-BALL FB

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3L
Memory Size: 4Gb (256M x 16)
Memory Interface: Parallel
Clock Frequency: 933MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20ns
Voltage - Supply: 1.283V ~ 1.45V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 96-TFBGA
Supplier Device Package: 96-FBGA (9x13.5)

封装: 96-TFBGA

库存6,048

DRAM

SDRAM - DDR3L

4Gb (256M x 16)

Parallel

933MHz

15ns

20ns

1.283V ~ 1.45V

-40°C ~ 95°C (TC)

Surface Mount

96-TFBGA

96-FBGA (9x13.5)

NDB16PFC-4DIT

Insignis Technology Corporation

NDB16PFC-4DIT: DDR2 1GB X16 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR2
Memory Size: 1Gbit
Memory Interface: SSTL_18
Clock Frequency: 400 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 450 ps
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 84-TFBGA
Supplier Device Package: 84-FBGA (8x12.5)

封装: -

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DRAM

SDRAM - DDR2

1Gbit

SSTL_18

400 MHz

15ns

450 ps

1.7V ~ 1.9V

-40°C ~ 95°C (TC)

Surface Mount

84-TFBGA

84-FBGA (8x12.5)

TE28F008BVT90

Intel

IC FLASH 8MBIT PARALLEL 40TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - Boot Block
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 90ns
Access Time: 90 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 40-TSOP

封装: -

Request a Quote

FLASH

FLASH - Boot Block

8Mbit

Parallel

-

90ns

90 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

40-TFSOP (0.724", 18.40mm Width)

40-TSOP

W66BQ2NQUAFJ-TR

Winbond Electronics

2GB LPDDR4X, DDP, X32, 1600MHZ,

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4X
Memory Size: 2Gbit
Memory Interface: LVSTL_06
Clock Frequency: 1.6 GHz
Write Cycle Time - Word, Page: 18ns
Access Time: 3.6 ns
Voltage - Supply: 1.06V ~ 1.17V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR4X

2Gbit

LVSTL_06

1.6 GHz

18ns

3.6 ns

1.06V ~ 1.17V, 1.7V ~ 1.95V

-40°C ~ 105°C (TC)

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

W25Q64JVSFSM

Winbond Electronics

IC FLASH 64MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR

64Mbit

SPI - Quad I/O

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

UPD44647366AF5-E22-FQ1-A

Renesas Electronics Corporation

IC SRAM 72MBIT PARALLEL 165PBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II+
Memory Size: 72Mbit
Memory Interface: Parallel
Clock Frequency: 450 MHz
Write Cycle Time - Word, Page: 2.2ns
Access Time: -
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-PBGA (13x15)

封装: -

Request a Quote

SRAM

SRAM - Synchronous, QDR II+

72Mbit

Parallel

450 MHz

2.2ns

-

1.7V ~ 1.9V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-PBGA (13x15)

SM671PED-AFST

Silicon Motion, Inc.

IC FLASH 1TBIT UFS3.1 153BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 1Tbit
Memory Interface: UFS3.1
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-BGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

1Tbit

UFS3.1

-

-40°C ~ 85°C

Surface Mount

153-TFBGA

153-BGA (11.5x13)

MT62F2G32D4DS-023-WT-ES-B-TR

Micron Technology Inc.

LPDDR5 64G 2GX32 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 64Gbit
Memory Interface: Parallel
Clock Frequency: 2.133 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

64Gbit

Parallel

2.133 GHz

-

1.05V

-25°C ~ 85°C

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

MTFC32GASAONS-AIT-TR

Micron Technology Inc.

USSD 256G

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (SLC)
Memory Size: 256Gbit
Memory Interface: UFS2.1
Clock Frequency: 52 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 153-TFBGA
Supplier Device Package: 153-TFBGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (SLC)

256Gbit

UFS2.1

52 MHz

-

2.7V ~ 3.6V

-40°C ~ 95°C (TC)

Surface Mount

153-TFBGA

153-TFBGA (11.5x13)

MTFC64GBCAQTC-AAT

Micron Technology Inc.

MM20F EMMC 512GBIT 153/196 LFBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存486

-

M3004316045NX0PBCY

Renesas Electronics Corporation

M3004316 MRAM PARALLEL 4MB X16 3

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 484-BGA
Supplier Device Package: 484-CABGA (23x23)

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

4Mbit

Parallel

-

45ns

45 ns

2.7V ~ 3.6V

-40°C ~ 105°C

Surface Mount

484-BGA

484-CABGA (23x23)