页 1930 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
TC58CVG2S0HQAIE	Toshiba Semiconductor and Storage	4GB SERIAL NAND 24NM SOP16 3.3V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: - Access Time: 280µs Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOP	封装: 16-SOIC (0.295", 7.50mm Width)	库存7,248	FLASH	FLASH - NAND	4Gb (512M x 8)	SPI - Quad I/O	104MHz	-	280µs	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOP
DS28E81+T	Maxim Integrated	RADIATION RESISTANT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存6,576	-	-	-	-	-	-	-	-	-	-	-	-
M36W0R6050L4ZSE	Micron Technology Inc.	IC FLASH 64MBIT 70NS 56TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 70ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -30°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFBGA Supplier Device Package: -	封装: 56-TFBGA	库存6,672	FLASH	FLASH	64Mb (4M x 16)	Parallel	-	-	70ns	1.7 V ~ 1.95 V	-30°C ~ 85°C (TA)	Surface Mount	56-TFBGA	-
AT93C46A-10PI	Microchip Technology	IC EEPROM 1KBIT 2MHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8, 64 x 16) Memory Interface: SPI Clock Frequency: 2MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-PDIP	封装: 8-DIP (0.300", 7.62mm)	库存5,456	EEPROM	EEPROM	1Kb (128 x 8, 64 x 16)	SPI	2MHz	10ms	-	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-PDIP
70V7519S166DR	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 166MHZ 208QFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: 3.6ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 208-BFQFP Supplier Device Package: 208-PQFP (28x28)	封装: 208-BFQFP	库存5,856	SRAM	SRAM - Dual Port, Synchronous	9Mb (256K x 36)	Parallel	166MHz	-	3.6ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	208-BFQFP	208-PQFP (28x28)
70V7599S133BC	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 133MHZ 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 4.5Mb (128K x 36) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封装: 256-LBGA	库存6,752	SRAM	SRAM - Dual Port, Synchronous	4.5Mb (128K x 36)	Parallel	133MHz	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
MT40A2G8FSE-093E:A TR	Micron Technology Inc.	IC SDRAM 16GBIT 1067MHZ 78BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR4 Memory Size: 16Gb (2G x 8) Memory Interface: Parallel Clock Frequency: 1067MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.26 V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-FBGA (9.5x13)	封装: 78-TFBGA	库存4,224	DRAM	SDRAM - DDR4	16Gb (2G x 8)	Parallel	1067MHz	-	-	1.14 V ~ 1.26 V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-FBGA (9.5x13)
S34MS08G201BHB000	Cypress Semiconductor Corp	NAND Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存7,296	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	45ns	45ns	1.7 V ~ 1.95 V	-40°C ~ 105°C (TA)	-	-	-
MT29F8G08ABACAH4-S:C TR	Micron Technology Inc.	IC FLASH 8GBIT 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 8Gb (1G x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存2,864	FLASH	FLASH - NAND	8Gb (1G x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
AS7C34096A-12TINTR	Alliance Memory, Inc.	IC SRAM 4MBIT 12NS 44TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: 44-TSOP (0.400", 10.16mm Width)	库存7,424	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
24FC512-I/ST14	Microchip Technology	IC EEPROM 512KBIT 1MHZ 14TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.7 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP	封装: 14-TSSOP (0.173", 4.40mm Width)	库存3,856	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	400ns	1.7 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	14-TSSOP (0.173", 4.40mm Width)	14-TSSOP
IS25WP032D-JLLE	ISSI, Integrated Silicon Solution Inc	32MB QPI/QSPI WSON ET Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8) Memory Interface: SPI - Quad I/O, QPI, DTR Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 1.65 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: 8-WDFN Exposed Pad	库存7,088	FLASH	FLASH - NOR	32Mb (4M x 8)	SPI - Quad I/O, QPI, DTR	133MHz	800µs	-	1.65 V ~ 1.95 V	-40°C ~ 105°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
MT29F1G08ABAEAH4-IT:E TR	Micron Technology Inc.	IC FLASH 1GBIT 20NS 63VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-VFBGA (9x11)	封装: 63-VFBGA	库存4,112	FLASH	FLASH - NAND	1Gb (128M x 8)	Parallel	-	-	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	63-VFBGA	63-VFBGA (9x11)
CAT24C512HU5IGT3	ON Semiconductor	IC EEPROM 512KBIT 1MHZ 8UDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: I2C Clock Frequency: 1MHz Write Cycle Time - Word, Page: 5ms Access Time: 400ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-UDFN (2x3)	封装: 8-UFDFN Exposed Pad	库存5,104	EEPROM	EEPROM	512Kb (64K x 8)	I2C	1MHz	5ms	400ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-UDFN (2x3)
NM93C46M8	ON Semiconductor	IC EEPROM 1K SPI 1MHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 1MHz Write Cycle Time - Word, Page: 10ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存2,336	EEPROM	EEPROM	1Kb (64 x 16)	SPI	1MHz	10ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
S29WS512P0PBFW0002	Cypress Semiconductor Corp	IC FLASH 512M PARALLEL 84FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 60ns Access Time: 80ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 84-VFBGA Supplier Device Package: 84-FBGA (11.6x8)	封装: 84-VFBGA	库存6,224	FLASH	FLASH - NOR	512Mb (32M x 16)	Parallel	66MHz	60ns	80ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	84-VFBGA	84-FBGA (11.6x8)
S34ML04G100BHB003	Cypress Semiconductor Corp	IC FLASH 4G PARALLEL 63BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 63-VFBGA Supplier Device Package: 63-BGA (11x9)	封装: 63-VFBGA	库存3,280	FLASH	FLASH - NAND	4Gb (512M x 8)	Parallel	-	25ns	-	2.7 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	63-VFBGA	63-BGA (11x9)
S76MSA90222AHD000	Cypress Semiconductor Corp	IC FLASH MEM 1GBIT 130BALL Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,184	-	-	-	-	-	-	-	-	-	-	-	-
MT53E2G32D8QD-053 WT:E	Micron Technology Inc.	LPDDR4 64G 2GX32 FBGA WT 8DP Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,792	-	-	-	-	-	-	-	-	-	-	-	-
CY7C024AV-20AXCT	Cypress Semiconductor Corp	IC SRAM 64KBIT 20NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存6,352	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	20ns	20ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
MT29F512G08AUEBBH8-12:B	Micron Technology Inc.	IC FLASH 512G PARALLEL 83MHZ Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 512Gb (64G x 8) Memory Interface: Parallel Clock Frequency: 83MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,160	FLASH	FLASH - NAND	512Gb (64G x 8)	Parallel	83MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
MT53D1G64D8SQ-053 WT:E	Micron Technology Inc.	IC DRAM 64G 1866MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 64Gb (1G x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,848	DRAM	SDRAM - Mobile LPDDR4	64Gb (1G x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
CAT25C08VI-1-8TE13	onsemi	IC EEPROM 8KBIT SPI 1MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 8Kbit Memory Interface: SPI Clock Frequency: 1 MHz Write Cycle Time - Word, Page: 10ms Access Time: 250 ns Voltage - Supply: 1.8V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	8Kbit	SPI	1 MHz	10ms	250 ns	1.8V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
CY7C199L-20ZC	Cypress Semiconductor Corp	IC SRAM 256KBIT PAR 28TSOP I Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-TSSOP (0.465", 11.80mm Width) Supplier Device Package: 28-TSOP I	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	256Kbit	Parallel	-	20ns	20 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	28-TSSOP (0.465", 11.80mm Width)	28-TSOP I
NDS73PBE-20ET-TR	Insignis Technology Corporation	SDR 128MB X32 BGA 8X13(X1.2) PC2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mbit Memory Interface: LVTTL Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-FBGA (8x13)	封装: -	Request a Quote	DRAM	SDRAM	128Mbit	LVTTL	200 MHz	-	-	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	90-TFBGA	90-FBGA (8x13)
FM24C16UEM8X	Fairchild Semiconductor	IC EEPROM 16KBIT I2C 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kbit Memory Interface: I2C Clock Frequency: 100 kHz Write Cycle Time - Word, Page: 10ms Access Time: 3.5 µs Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	EEPROM	EEPROM	16Kbit	I2C	100 kHz	10ms	3.5 µs	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
IS61WV25632BLL-10BI	ISSI, Integrated Silicon Solution Inc	IC SRAM 8MBIT PARALLEL 90TFBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 8Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 2.4V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-TFBGA Supplier Device Package: 90-TFBGA (8x13)	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	8Mbit	Parallel	-	10ns	10 ns	2.4V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	90-TFBGA	90-TFBGA (8x13)
SM662PAA-BDST	Silicon Motion, Inc.	IC FLASH 128GBIT EMMC 100BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 100-LBGA Supplier Device Package: 100-BGA (14x18)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC	-	-	-	-	-40°C ~ 85°C	Surface Mount	100-LBGA	100-BGA (14x18)
MR5A16AYS35	Everspin Technologies Inc.	IC RAM 32MBIT PARALLEL 54TSOP2 Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 32Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP2	封装: -	Request a Quote	RAM	MRAM (Magnetoresistive RAM)	32Mbit	Parallel	-	35ns	35 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP2
NM25C041EM8	Rochester Electronics, LLC	25C041 - EEPROM, 512X8, SERIAL, Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-

TC58CVG2S0HQAIE

Toshiba Semiconductor and Storage

4GB SERIAL NAND 24NM SOP16 3.3V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: -
Access Time: 280µs
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOP

封装: 16-SOIC (0.295", 7.50mm Width)

库存7,248

FLASH

FLASH - NAND

4Gb (512M x 8)

SPI - Quad I/O

104MHz

-

280µs

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOP

DS28E81+T

Maxim Integrated

RADIATION RESISTANT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存6,576

-

M36W0R6050L4ZSE

Micron Technology Inc.

IC FLASH 64MBIT 70NS 56TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 70ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -30°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFBGA
Supplier Device Package: -

封装: 56-TFBGA

库存6,672

FLASH

64Mb (4M x 16)

Parallel

-

70ns

1.7 V ~ 1.95 V

-30°C ~ 85°C (TA)

Surface Mount

56-TFBGA

-

AT93C46A-10PI

Microchip Technology

IC EEPROM 1KBIT 2MHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8, 64 x 16)
Memory Interface: SPI
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-PDIP

封装: 8-DIP (0.300", 7.62mm)

库存5,456

EEPROM

1Kb (128 x 8, 64 x 16)

SPI

2MHz

10ms

-

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-PDIP

70V7519S166DR

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 166MHZ 208QFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: 3.6ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 208-BFQFP
Supplier Device Package: 208-PQFP (28x28)

封装: 208-BFQFP

库存5,856

SRAM

SRAM - Dual Port, Synchronous

9Mb (256K x 36)

Parallel

166MHz

-

3.6ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

208-BFQFP

208-PQFP (28x28)

70V7599S133BC

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 133MHZ 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 4.5Mb (128K x 36)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封装: 256-LBGA

库存6,752

SRAM

SRAM - Dual Port, Synchronous

4.5Mb (128K x 36)

Parallel

133MHz

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

MT40A2G8FSE-093E:A TR

Micron Technology Inc.

IC SDRAM 16GBIT 1067MHZ 78BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR4
Memory Size: 16Gb (2G x 8)
Memory Interface: Parallel
Clock Frequency: 1067MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.26 V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-FBGA (9.5x13)

封装: 78-TFBGA

库存4,224

DRAM

SDRAM - DDR4

16Gb (2G x 8)

Parallel

1067MHz

-

1.14 V ~ 1.26 V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-FBGA (9.5x13)

S34MS08G201BHB000

Cypress Semiconductor Corp

NAND

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,296

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

45ns

1.7 V ~ 1.95 V

-40°C ~ 105°C (TA)

-

MT29F8G08ABACAH4-S:C TR

Micron Technology Inc.

IC FLASH 8GBIT 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 8Gb (1G x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存2,864

FLASH

FLASH - NAND

8Gb (1G x 8)

Parallel

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

AS7C34096A-12TINTR

Alliance Memory, Inc.

IC SRAM 4MBIT 12NS 44TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: 44-TSOP (0.400", 10.16mm Width)

库存7,424

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

24FC512-I/ST14

Microchip Technology

IC EEPROM 512KBIT 1MHZ 14TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.7 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 14-TSSOP

封装: 14-TSSOP (0.173", 4.40mm Width)

库存3,856

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

400ns

1.7 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

14-TSSOP (0.173", 4.40mm Width)

14-TSSOP

IS25WP032D-JLLE

ISSI, Integrated Silicon Solution Inc

32MB QPI/QSPI WSON ET

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8)
Memory Interface: SPI - Quad I/O, QPI, DTR
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 1.65 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: 8-WDFN Exposed Pad

库存7,088

FLASH

FLASH - NOR

32Mb (4M x 8)

SPI - Quad I/O, QPI, DTR

133MHz

800µs

-

1.65 V ~ 1.95 V

-40°C ~ 105°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

MT29F1G08ABAEAH4-IT:E TR

Micron Technology Inc.

IC FLASH 1GBIT 20NS 63VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)

封装: 63-VFBGA

库存4,112

FLASH

FLASH - NAND

1Gb (128M x 8)

Parallel

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

63-VFBGA

63-VFBGA (9x11)

CAT24C512HU5IGT3

ON Semiconductor

IC EEPROM 512KBIT 1MHZ 8UDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: I2C
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 5ms
Access Time: 400ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-UDFN (2x3)

封装: 8-UFDFN Exposed Pad

库存5,104

EEPROM

512Kb (64K x 8)

I2C

1MHz

5ms

400ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-UDFN (2x3)

NM93C46M8

ON Semiconductor

IC EEPROM 1K SPI 1MHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 1MHz
Write Cycle Time - Word, Page: 10ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存2,336

EEPROM

1Kb (64 x 16)

SPI

1MHz

10ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

S29WS512P0PBFW0002

Cypress Semiconductor Corp

IC FLASH 512M PARALLEL 84FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 80ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 84-VFBGA
Supplier Device Package: 84-FBGA (11.6x8)

封装: 84-VFBGA

库存6,224

FLASH

FLASH - NOR

512Mb (32M x 16)

Parallel

66MHz

60ns

80ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

84-VFBGA

84-FBGA (11.6x8)

S34ML04G100BHB003

Cypress Semiconductor Corp

IC FLASH 4G PARALLEL 63BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 63-VFBGA
Supplier Device Package: 63-BGA (11x9)

封装: 63-VFBGA

库存3,280

FLASH

FLASH - NAND

4Gb (512M x 8)

Parallel

-

25ns

-

2.7 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

63-VFBGA

63-BGA (11x9)

S76MSA90222AHD000

Cypress Semiconductor Corp

IC FLASH MEM 1GBIT 130BALL

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,184

-

MT53E2G32D8QD-053 WT:E

Micron Technology Inc.

LPDDR4 64G 2GX32 FBGA WT 8DP

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,792

-

CY7C024AV-20AXCT

Cypress Semiconductor Corp

IC SRAM 64KBIT 20NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存6,352

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

20ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

MT29F512G08AUEBBH8-12:B

Micron Technology Inc.

IC FLASH 512G PARALLEL 83MHZ

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 512Gb (64G x 8)
Memory Interface: Parallel
Clock Frequency: 83MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,160

FLASH

FLASH - NAND

512Gb (64G x 8)

Parallel

83MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

MT53D1G64D8SQ-053 WT:E

Micron Technology Inc.

IC DRAM 64G 1866MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 64Gb (1G x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,848

DRAM

SDRAM - Mobile LPDDR4

64Gb (1G x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

CAT25C08VI-1-8TE13

onsemi

IC EEPROM 8KBIT SPI 1MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 8Kbit
Memory Interface: SPI
Clock Frequency: 1 MHz
Write Cycle Time - Word, Page: 10ms
Access Time: 250 ns
Voltage - Supply: 1.8V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

EEPROM

8Kbit

SPI

1 MHz

10ms

250 ns

1.8V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

CY7C199L-20ZC

Cypress Semiconductor Corp

IC SRAM 256KBIT PAR 28TSOP I

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-TSSOP (0.465", 11.80mm Width)
Supplier Device Package: 28-TSOP I

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

256Kbit

Parallel

-

20ns

20 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

28-TSSOP (0.465", 11.80mm Width)

28-TSOP I

NDS73PBE-20ET-TR

Insignis Technology Corporation

SDR 128MB X32 BGA 8X13(X1.2) PC2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mbit
Memory Interface: LVTTL
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-FBGA (8x13)

封装: -

Request a Quote

DRAM

SDRAM

128Mbit

LVTTL

200 MHz

-

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

90-TFBGA

90-FBGA (8x13)

FM24C16UEM8X

Fairchild Semiconductor

IC EEPROM 16KBIT I2C 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kbit
Memory Interface: I2C
Clock Frequency: 100 kHz
Write Cycle Time - Word, Page: 10ms
Access Time: 3.5 µs
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

EEPROM

16Kbit

I2C

100 kHz

10ms

3.5 µs

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

IS61WV25632BLL-10BI

ISSI, Integrated Silicon Solution Inc

IC SRAM 8MBIT PARALLEL 90TFBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 8Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-TFBGA
Supplier Device Package: 90-TFBGA (8x13)

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

8Mbit

Parallel

-

10ns

10 ns

2.4V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

90-TFBGA

90-TFBGA (8x13)

SM662PAA-BDST

Silicon Motion, Inc.

IC FLASH 128GBIT EMMC 100BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 100-LBGA
Supplier Device Package: 100-BGA (14x18)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

128Gbit

eMMC

-

-40°C ~ 85°C

Surface Mount

100-LBGA

100-BGA (14x18)

MR5A16AYS35

Everspin Technologies Inc.

IC RAM 32MBIT PARALLEL 54TSOP2

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 32Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP2

封装: -

Request a Quote

RAM

MRAM (Magnetoresistive RAM)

32Mbit

Parallel

-

35ns

35 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP2

NM25C041EM8

Rochester Electronics, LLC

25C041 - EEPROM, 512X8, SERIAL,

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-