页 1910 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IS42S32160B-75BL	ISSI, Integrated Silicon Solution Inc	IC SDRAM 512MBIT 133MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 90-LFBGA Supplier Device Package: 90-LFBGA (13x11)	封装: 90-LFBGA	库存7,296	DRAM	SDRAM	512Mb (16M x 32)	Parallel	133MHz	-	5.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	90-LFBGA	90-LFBGA (13x11)
M29F400BB70N1	Micron Technology Inc.	IC FLASH 4MBIT 70NS 48TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8, 256K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP	封装: 48-TFSOP (0.724", 18.40mm Width)	库存4,848	FLASH	FLASH - NOR	4Mb (512K x 8, 256K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP
MT48LC32M16A2P-75:C TR	Micron Technology Inc.	IC SDRAM 512MBIT 133MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 133MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.4ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存7,664	DRAM	SDRAM	512Mb (32M x 16)	Parallel	133MHz	15ns	5.4ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
CY7C1049CV33-15VXC	Cypress Semiconductor Corp	IC SRAM 4MBIT 15NS 36SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 36-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 36-SOJ	封装: 36-BSOJ (0.400", 10.16mm Width)	库存6,704	SRAM	SRAM - Asynchronous	4Mb (512K x 8)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	36-BSOJ (0.400", 10.16mm Width)	36-SOJ
CY7C09449PV-AC	Cypress Semiconductor Corp	IC SRAM 128KBIT 50MHZ 160LQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 128Kb (4K x 32) Memory Interface: Parallel Clock Frequency: 50MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 160-LQFP Supplier Device Package: -	封装: 160-LQFP	库存10,368	SRAM	SRAM - Dual Port, Synchronous	128Kb (4K x 32)	Parallel	50MHz	-	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	160-LQFP	-
DS1225AD-150IND	Maxim Integrated	IC NVSRAM 64KBIT 150NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	封装: 28-DIP Module (0.600", 15.24mm)	库存6,400	NVSRAM	NVSRAM (Non-Volatile SRAM)	64Kb (8K x 8)	Parallel	-	150ns	150ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
AT49BV001-12TC	Microchip Technology	IC FLASH 1MBIT 120NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 50µs Access Time: 120ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封装: 32-TFSOP (0.724", 18.40mm Width)	库存3,856	FLASH	FLASH	1Mb (128K x 8)	Parallel	-	50µs	120ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
CY7C1265XV18-633BZXC	Cypress Semiconductor Corp	IC SRAM 36MBIT 633MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, QDR II Memory Size: 36Mb (1M x 36) Memory Interface: Parallel Clock Frequency: 633MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存5,216	SRAM	SRAM - Synchronous, QDR II	36Mb (1M x 36)	Parallel	633MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
71342LA25PFI	IDT, Integrated Device Technology Inc	IC SRAM 32KBIT 25NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 32Kb (4K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	封装: 64-LQFP	库存3,248	SRAM	SRAM - Dual Port, Asynchronous	32Kb (4K x 8)	Parallel	-	25ns	25ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
7130LA20J	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 20NS 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封装: 52-LCC (J-Lead)	库存28,800	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)
IS25LP064A-JBLE	ISSI, Integrated Silicon Solution Inc	IC FLASH 64MBIT 133MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8) Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存20,688	FLASH	FLASH - NOR	64Mb (8M x 8)	SPI - Quad I/O, QPI	133MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
25AA256/WF16K	Microchip Technology	IC EEPROM 256K SPI 10MHZ WAFER Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: Die	库存4,576	EEPROM	EEPROM	256Kb (32K x 8)	SPI	10MHz	5ms	-	1.8 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	Die	Die
S25FS512SDSNFB011	Cypress Semiconductor Corp	IC NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x8)	封装: 8-WDFN Exposed Pad	库存4,144	-	-	-	-	-	-	-	-	-	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x8)
MX25U6435FBBI-10G	Macronix	IC FLASH 64MBIT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存78,600	-	-	-	-	-	-	-	-	-	-	-	-
MT53D384M64D4KA-046 XT ES:E	Micron Technology Inc.	IC DRAM 24G 2133MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 24Gb (384M x 64) Memory Interface: - Clock Frequency: 2133MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存4,528	DRAM	SDRAM - Mobile LPDDR4	24Gb (384M x 64)	-	2133MHz	-	-	1.1V	-30°C ~ 105°C (TC)	-	-	-
70V28VL15PF	IDT, Integrated Device Technology Inc	IC SRAM 1M PARALLEL 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 1Mb (64K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,880	SRAM	SRAM - Dual Port, Asynchronous	1Mb (64K x 16)	Parallel	-	15ns	15ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
EDB8164B4PT-1DAT-F-R	Micron Technology Inc.	IC DRAM 8G PARALLEL 533MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2 Memory Size: 8Gb (128M x 64) Memory Interface: Parallel Clock Frequency: 533MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.14 V ~ 1.95 V Operating Temperature: -40°C ~ 105°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,808	DRAM	SDRAM - Mobile LPDDR2	8Gb (128M x 64)	Parallel	533MHz	-	-	1.14 V ~ 1.95 V	-40°C ~ 105°C (TC)	-	-	-
MTFC8GACAENS-5M AIT TR	Micron Technology Inc.	MODULE EMMC 64G 153TFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 64Gb (8G x 8) Memory Interface: MMC Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: - Supplier Device Package: -	封装: -	库存6,912	FLASH	FLASH - NAND	64Gb (8G x 8)	MMC	-	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	-	-
MT29F16T08GWLCEM5-QB-C-TR	Micron Technology Inc.	QLC 16T 2TX8 LBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
S29PL064J60BFA070	Infineon Technologies	IC FLASH 64MBIT CFI 48FBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 64Mbit Memory Interface: CFI Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 60 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-VFBGA Supplier Device Package: 48-FBGA (8.15x6.15)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	64Mbit	CFI	-	60ns	60 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	48-VFBGA	48-FBGA (8.15x6.15)
IS43TR81024B-125KBL	ISSI, Integrated Silicon Solution Inc	8G, 1.5V, DDR3, 1Gx8, 1600MT/s @ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR3 Memory Size: 8Gbit Memory Interface: Parallel Clock Frequency: 800 MHz Write Cycle Time - Word, Page: 15ns Access Time: 20 ns Voltage - Supply: 1.425V ~ 1.575V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 78-TFBGA Supplier Device Package: 78-TWBGA (10x14)	封装: -	Request a Quote	DRAM	SDRAM - DDR3	8Gbit	Parallel	800 MHz	15ns	20 ns	1.425V ~ 1.575V	0°C ~ 95°C (TC)	Surface Mount	78-TFBGA	78-TWBGA (10x14)
CY7C11701KV18-450BZXC	Cypress Semiconductor Corp	DDR SRAM, 512KX36, 0.45NS, CMOS, Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
AT25XE321D-SHN-B	Renesas Electronics Corporation	32 MBIT, WIDE VCC (1.65V TO 3.6V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 32µs, 8ms Access Time: 8 ns Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	32Mbit	SPI - Quad I/O	133 MHz	32µs, 8ms	8 ns	1.65V ~ 3.6V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
70V09S20PFI8	Renesas Electronics Corporation	IC RAM DUAL PORT Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS42S32200N-7TL-TR	ISSI, Integrated Silicon Solution Inc	IC DRAM 64MBIT PAR 86TSOP II Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 64Mbit Memory Interface: LVTTL Clock Frequency: 143 MHz Write Cycle Time - Word, Page: - Access Time: 5.4 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 86-TFSOP (0.400", 10.16mm Width) Supplier Device Package: 86-TSOP II	封装: -	Request a Quote	DRAM	SDRAM	64Mbit	LVTTL	143 MHz	-	5.4 ns	3V ~ 3.6V	0°C ~ 70°C (TA)	Surface Mount	86-TFSOP (0.400", 10.16mm Width)	86-TSOP II
MT62F1G32D2DS-023-AIT-C	Micron Technology Inc.	LPDDR5 32GBIT 32 315/315 TFBGA 2 Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 32Gbit Memory Interface: Parallel Clock Frequency: 4.266 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.05V Operating Temperature: - Mounting Type: Surface Mount Package / Case: 200-WFBGA Supplier Device Package: 200-WFBGA (10x14.5)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	32Gbit	Parallel	4.266 GHz	-	-	1.05V	-	Surface Mount	200-WFBGA	200-WFBGA (10x14.5)
R1RP0416DSB-2LR-S1	Renesas Electronics Corporation	ASYNC. 4M FAST SRAM 256KX16 PB-F Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 4Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	4Mbit	Parallel	-	12ns	12 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
16-3160-01	Infineon Technologies	IC GATE NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
70V24S20PFG	Renesas Electronics Corporation	70V24S20PFG Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
GD25VQ40CEIGR	GigaDevice Semiconductor (HK) Limited	IC FLASH 4MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 50µs, 3ms Access Time: - Voltage - Supply: 2.3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-XFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封装: -	Request a Quote	FLASH	FLASH - NOR	4Mbit	SPI - Quad I/O	104 MHz	50µs, 3ms	-	2.3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-XFDFN Exposed Pad	8-USON (2x3)

IS42S32160B-75BL

ISSI, Integrated Silicon Solution Inc

IC SDRAM 512MBIT 133MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-LFBGA
Supplier Device Package: 90-LFBGA (13x11)

封装: 90-LFBGA

库存7,296

DRAM

SDRAM

512Mb (16M x 32)

Parallel

133MHz

-

5.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

90-LFBGA

90-LFBGA (13x11)

M29F400BB70N1

Micron Technology Inc.

IC FLASH 4MBIT 70NS 48TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mb (512K x 8, 256K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP

封装: 48-TFSOP (0.724", 18.40mm Width)

库存4,848

FLASH

FLASH - NOR

4Mb (512K x 8, 256K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP

MT48LC32M16A2P-75:C TR

Micron Technology Inc.

IC SDRAM 512MBIT 133MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.4ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存7,664

DRAM

SDRAM

512Mb (32M x 16)

Parallel

133MHz

15ns

5.4ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

CY7C1049CV33-15VXC

Cypress Semiconductor Corp

IC SRAM 4MBIT 15NS 36SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 36-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 36-SOJ

封装: 36-BSOJ (0.400", 10.16mm Width)

库存6,704

SRAM

SRAM - Asynchronous

4Mb (512K x 8)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

36-BSOJ (0.400", 10.16mm Width)

36-SOJ

CY7C09449PV-AC

Cypress Semiconductor Corp

IC SRAM 128KBIT 50MHZ 160LQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 128Kb (4K x 32)
Memory Interface: Parallel
Clock Frequency: 50MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 160-LQFP
Supplier Device Package: -

封装: 160-LQFP

库存10,368

SRAM

SRAM - Dual Port, Synchronous

128Kb (4K x 32)

Parallel

50MHz

-

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

160-LQFP

-

DS1225AD-150IND

Maxim Integrated

IC NVSRAM 64KBIT 150NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

库存6,400

NVSRAM

NVSRAM (Non-Volatile SRAM)

64Kb (8K x 8)

Parallel

-

150ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

AT49BV001-12TC

Microchip Technology

IC FLASH 1MBIT 120NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 50µs
Access Time: 120ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

库存3,856

FLASH

1Mb (128K x 8)

Parallel

-

50µs

120ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

CY7C1265XV18-633BZXC

Cypress Semiconductor Corp

IC SRAM 36MBIT 633MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, QDR II
Memory Size: 36Mb (1M x 36)
Memory Interface: Parallel
Clock Frequency: 633MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存5,216

SRAM

SRAM - Synchronous, QDR II

36Mb (1M x 36)

Parallel

633MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

71342LA25PFI

IDT, Integrated Device Technology Inc

IC SRAM 32KBIT 25NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 32Kb (4K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

库存3,248

SRAM

SRAM - Dual Port, Asynchronous

32Kb (4K x 8)

Parallel

-

25ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

7130LA20J

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 20NS 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封装: 52-LCC (J-Lead)

库存28,800

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)

IS25LP064A-JBLE

ISSI, Integrated Silicon Solution Inc

IC FLASH 64MBIT 133MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8)
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存20,688

FLASH

FLASH - NOR

64Mb (8M x 8)

SPI - Quad I/O, QPI

133MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

25AA256/WF16K

Microchip Technology

IC EEPROM 256K SPI 10MHZ WAFER

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: Die

库存4,576

EEPROM

256Kb (32K x 8)

SPI

10MHz

5ms

-

1.8 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

Die

S25FS512SDSNFB011

Cypress Semiconductor Corp

IC NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x8)

封装: 8-WDFN Exposed Pad

库存4,144

-

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x8)

MX25U6435FBBI-10G

Macronix

IC FLASH 64MBIT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存78,600

-

MT53D384M64D4KA-046 XT ES:E

Micron Technology Inc.

IC DRAM 24G 2133MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 24Gb (384M x 64)
Memory Interface: -
Clock Frequency: 2133MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存4,528

DRAM

SDRAM - Mobile LPDDR4

24Gb (384M x 64)

-

2133MHz

-

1.1V

-30°C ~ 105°C (TC)

-

70V28VL15PF

IDT, Integrated Device Technology Inc

IC SRAM 1M PARALLEL 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 1Mb (64K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,880

SRAM

SRAM - Dual Port, Asynchronous

1Mb (64K x 16)

Parallel

-

15ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

EDB8164B4PT-1DAT-F-R

Micron Technology Inc.

IC DRAM 8G PARALLEL 533MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2
Memory Size: 8Gb (128M x 64)
Memory Interface: Parallel
Clock Frequency: 533MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.14 V ~ 1.95 V
Operating Temperature: -40°C ~ 105°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,808

DRAM

SDRAM - Mobile LPDDR2

8Gb (128M x 64)

Parallel

533MHz

-

1.14 V ~ 1.95 V

-40°C ~ 105°C (TC)

-

MTFC8GACAENS-5M AIT TR

Micron Technology Inc.

MODULE EMMC 64G 153TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 64Gb (8G x 8)
Memory Interface: MMC
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: -
Supplier Device Package: -

封装: -

库存6,912

FLASH

FLASH - NAND

64Gb (8G x 8)

MMC

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

-

MT29F16T08GWLCEM5-QB-C-TR

Micron Technology Inc.

QLC 16T 2TX8 LBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

S29PL064J60BFA070

Infineon Technologies

IC FLASH 64MBIT CFI 48FBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 64Mbit
Memory Interface: CFI
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 60 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Supplier Device Package: 48-FBGA (8.15x6.15)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

64Mbit

CFI

-

60ns

60 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

48-VFBGA

48-FBGA (8.15x6.15)

IS43TR81024B-125KBL

ISSI, Integrated Silicon Solution Inc

8G, 1.5V, DDR3, 1Gx8, 1600MT/s @

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR3
Memory Size: 8Gbit
Memory Interface: Parallel
Clock Frequency: 800 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 20 ns
Voltage - Supply: 1.425V ~ 1.575V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 78-TFBGA
Supplier Device Package: 78-TWBGA (10x14)

封装: -

Request a Quote

DRAM

SDRAM - DDR3

8Gbit

Parallel

800 MHz

15ns

20 ns

1.425V ~ 1.575V

0°C ~ 95°C (TC)

Surface Mount

78-TFBGA

78-TWBGA (10x14)

CY7C11701KV18-450BZXC

Cypress Semiconductor Corp

DDR SRAM, 512KX36, 0.45NS, CMOS,

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

AT25XE321D-SHN-B

Renesas Electronics Corporation

32 MBIT, WIDE VCC (1.65V TO 3.6V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 32µs, 8ms
Access Time: 8 ns
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

32Mbit

SPI - Quad I/O

133 MHz

32µs, 8ms

8 ns

1.65V ~ 3.6V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

70V09S20PFI8

Renesas Electronics Corporation

IC RAM DUAL PORT

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IS42S32200N-7TL-TR

ISSI, Integrated Silicon Solution Inc

IC DRAM 64MBIT PAR 86TSOP II

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 64Mbit
Memory Interface: LVTTL
Clock Frequency: 143 MHz
Write Cycle Time - Word, Page: -
Access Time: 5.4 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Supplier Device Package: 86-TSOP II

封装: -

Request a Quote

DRAM

SDRAM

64Mbit

LVTTL

143 MHz

-

5.4 ns

3V ~ 3.6V

0°C ~ 70°C (TA)

Surface Mount

86-TFSOP (0.400", 10.16mm Width)

86-TSOP II

MT62F1G32D2DS-023-AIT-C

Micron Technology Inc.

LPDDR5 32GBIT 32 315/315 TFBGA 2

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 32Gbit
Memory Interface: Parallel
Clock Frequency: 4.266 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.05V
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 200-WFBGA
Supplier Device Package: 200-WFBGA (10x14.5)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

32Gbit

Parallel

4.266 GHz

-

1.05V

-

Surface Mount

200-WFBGA

200-WFBGA (10x14.5)

R1RP0416DSB-2LR-S1

Renesas Electronics Corporation

ASYNC. 4M FAST SRAM 256KX16 PB-F

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

4Mbit

Parallel

-

12ns

12 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

16-3160-01

Infineon Technologies

IC GATE NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

70V24S20PFG

Renesas Electronics Corporation

70V24S20PFG

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

GD25VQ40CEIGR

GigaDevice Semiconductor (HK) Limited

IC FLASH 4MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 50µs, 3ms
Access Time: -
Voltage - Supply: 2.3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-XFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封装: -

Request a Quote

FLASH

FLASH - NOR

4Mbit

SPI - Quad I/O

104 MHz

50µs, 3ms

-

2.3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-XFDFN Exposed Pad

8-USON (2x3)