页 1871 - 存储器 | 集成电路（IC） | 深圳黑森尔电子
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存储器

记录 62,144
页  1,871/2,072
图片
零件编号
制造商
描述
封装
库存
数量
Memory Format
Technology
Memory Size
Memory Interface
Clock Frequency
Write Cycle Time - Word, Page
Access Time
Voltage - Supply
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
MT29E512G08CUCDBJ6-6:D
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 132LBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,944
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
MTFC4GACAEAM-1M WT
Micron Technology Inc.

MOD MCP EMMC 16GB WFBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 32Gb (4G x 8)
  • Memory Interface: MMC
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,520
FLASH
FLASH - NAND
32Gb (4G x 8)
MMC
-
-
-
2.7 V ~ 3.6 V
-25°C ~ 85°C (TA)
-
-
-
AT45DQ161-SSHD2B-T
Adesto Technologies

IC FLASH 16MBIT 85MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (512 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 100MHz
  • Write Cycle Time - Word, Page: 8µs, 6ms
  • Access Time: -
  • Voltage - Supply: 2.5 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存2,416
FLASH
FLASH
16Mb (512 Bytes x 4096 pages)
SPI
100MHz
8µs, 6ms
-
2.5 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SOIC
MT46H64M32LFMA-6 WT:B TR
Micron Technology Inc.

IC SDRAM 2GBIT 167MHZ 168WFBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR
  • Memory Size: 2Gb (64M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.0ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 168-WFBGA
  • Supplier Device Package: 168-WFBGA (12x12)
封装: 168-WFBGA
库存3,376
DRAM
SDRAM - Mobile LPDDR
2Gb (64M x 32)
Parallel
166MHz
15ns
5.0ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TA)
Surface Mount
168-WFBGA
168-WFBGA (12x12)
SST39VF512-70-4I-NHE
Microchip Technology

IC FLASH 512KBIT 70NS 32PLCC

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20µs
  • Access Time: 70ns
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LCC (J-Lead)
  • Supplier Device Package: 32-PLCC
封装: 32-LCC (J-Lead)
库存4,336
FLASH
FLASH
512Kb (64K x 8)
Parallel
-
20µs
70ns
2.7 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-LCC (J-Lead)
32-PLCC
IS61LV5128AL-10BLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 4MBIT 10NS 36MINIBGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 4Mb (512K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 10ns
  • Access Time: 10ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 36-TFBGA
  • Supplier Device Package: 36-miniBGA (8x10)
封装: 36-TFBGA
库存3,088
SRAM
SRAM - Asynchronous
4Mb (512K x 8)
Parallel
-
10ns
10ns
3.135 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
36-TFBGA
36-miniBGA (8x10)
hot MT46V256M4TG-75:A
Micron Technology Inc.

IC SDRAM 1GBIT 133MHZ 66TSOP

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - DDR
  • Memory Size: 1Gb (256M x 4)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 750ps
  • Voltage - Supply: 2.3 V ~ 2.7 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 66-TSSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 66-TSOP
封装: 66-TSSOP (0.400", 10.16mm Width)
库存4,448
DRAM
SDRAM - DDR
1Gb (256M x 4)
Parallel
133MHz
15ns
750ps
2.3 V ~ 2.7 V
0°C ~ 70°C (TA)
Surface Mount
66-TSSOP (0.400", 10.16mm Width)
66-TSOP
hot LH28F016SCT-L95
Sharp Microelectronics

IC FLASH 16MBIT 95NS 40TSOP

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 16Mb (2M x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 95ns
  • Access Time: 95ns
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 40-TFSOP (0.724", 18.40mm Width)
  • Supplier Device Package: 40-TSOP
封装: 40-TFSOP (0.724", 18.40mm Width)
库存242,016
FLASH
FLASH
16Mb (2M x 8)
Parallel
-
95ns
95ns
4.75 V ~ 5.25 V
0°C ~ 70°C (TA)
Surface Mount
40-TFSOP (0.724", 18.40mm Width)
40-TSOP
5962F1120202VXA
Cypress Semiconductor Corp

IC SRAM SYNC 165CGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous, QDR II+
  • Memory Size: 72Mb (2M x 36)
  • Memory Interface: Parallel
  • Clock Frequency: 250MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 1.9 V
  • Operating Temperature: -55°C ~ 125°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 165-BFCPGA
  • Supplier Device Package: 165-CCGA (21x25)
封装: 165-BFCPGA
库存7,664
SRAM
SRAM - Synchronous, QDR II+
72Mb (2M x 36)
Parallel
250MHz
-
-
1.7 V ~ 1.9 V
-55°C ~ 125°C (TA)
Surface Mount
165-BFCPGA
165-CCGA (21x25)
70V657S12BFGI
IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 12NS 208CABGA

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 1.125Mb (32K x 36)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3.15 V ~ 3.45 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 208-LFBGA
  • Supplier Device Package: 208-CABGA (15x15)
封装: 208-LFBGA
库存6,896
SRAM
SRAM - Dual Port, Asynchronous
1.125Mb (32K x 36)
Parallel
-
12ns
12ns
3.15 V ~ 3.45 V
-40°C ~ 85°C (TA)
Surface Mount
208-LFBGA
208-CABGA (15x15)
MT29E512G08CMCCBH7-6ES:C TR
Micron Technology Inc.

IC FLASH 512GBIT 167MHZ 152TBGA

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND
  • Memory Size: 512Gb (64G x 8)
  • Memory Interface: Parallel
  • Clock Frequency: 167MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存6,608
FLASH
FLASH - NAND
512Gb (64G x 8)
Parallel
167MHz
-
-
2.7 V ~ 3.6 V
0°C ~ 70°C (TA)
-
-
-
IS43LR32100D-6BL
ISSI, Integrated Silicon Solution Inc

IC SDRAM 32MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile DDR
  • Memory Size: 32Mb (1M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.5ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-TFBGA (8x13)
封装: 90-TFBGA
库存5,792
DRAM
SDRAM - Mobile DDR
32Mb (1M x 32)
Parallel
166MHz
15ns
5.5ns
1.7 V ~ 1.95 V
0°C ~ 70°C (TA)
Surface Mount
90-TFBGA
90-TFBGA (8x13)
W987D2HBJX6E TR
Winbond Electronics

IC SDRAM 128MBIT 166MHZ 90BGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPSDR
  • Memory Size: 128Mb (4M x 32)
  • Memory Interface: Parallel
  • Clock Frequency: 166MHz
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 5.4ns
  • Voltage - Supply: 1.7 V ~ 1.95 V
  • Operating Temperature: -25°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 90-TFBGA
  • Supplier Device Package: 90-VFBGA (8x13)
封装: 90-TFBGA
库存5,568
DRAM
SDRAM - Mobile LPSDR
128Mb (4M x 32)
Parallel
166MHz
15ns
5.4ns
1.7 V ~ 1.95 V
-25°C ~ 85°C (TC)
Surface Mount
90-TFBGA
90-VFBGA (8x13)
IS63WV1024BLL-12HLI-TR
ISSI, Integrated Silicon Solution Inc

IC SRAM 1MBIT 12NS 32STSOP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 12ns
  • Voltage - Supply: 3 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-LFSOP (0.465", 11.80mm Width)
  • Supplier Device Package: 32-sTSOP I
封装: 32-LFSOP (0.465", 11.80mm Width)
库存5,520
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
12ns
12ns
3 V ~ 3.6 V
-40°C ~ 85°C (TA)
Surface Mount
32-LFSOP (0.465", 11.80mm Width)
32-sTSOP I
CY7C1352S-133AXC
Cypress Semiconductor Corp

IC SRAM 4.5MBIT 133MHZ 100LQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Synchronous
  • Memory Size: 4.5Mb (256K x 18)
  • Memory Interface: Parallel
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: 4ns
  • Voltage - Supply: 3.135 V ~ 3.6 V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存6,896
SRAM
SRAM - Synchronous
4.5Mb (256K x 18)
Parallel
133MHz
-
4ns
3.135 V ~ 3.6 V
0°C ~ 70°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
71024S15TYGI8
IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 15NS 32SOJ

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Asynchronous
  • Memory Size: 1Mb (128K x 8)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 15ns
  • Access Time: 15ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 32-BSOJ (0.300", 7.62mm Width)
  • Supplier Device Package: 32-SOJ
封装: 32-BSOJ (0.300", 7.62mm Width)
库存4,704
SRAM
SRAM - Asynchronous
1Mb (128K x 8)
Parallel
-
15ns
15ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
32-BSOJ (0.300", 7.62mm Width)
32-SOJ
AT45DB081E-MHN2B-T
Adesto Technologies

IC FLASH 8MBIT 85MHZ 8UDFN

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH
  • Memory Size: 8Mb (256 Bytes x 4096 pages)
  • Memory Interface: SPI
  • Clock Frequency: 85MHz
  • Write Cycle Time - Word, Page: 8µs, 4ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 3.6 V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: 8-UDFN Exposed Pad
  • Supplier Device Package: 8-UDFN (5x6)
封装: 8-UDFN Exposed Pad
库存4,016
FLASH
FLASH
8Mb (256 Bytes x 4096 pages)
SPI
85MHz
8µs, 4ms
-
1.7 V ~ 3.6 V
-40°C ~ 85°C (TC)
Surface Mount
8-UDFN Exposed Pad
8-UDFN (5x6)
hot DS2460S+
Maxim Integrated

IC EEPROM 128BIT 400KHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 896b (112 x 8)
  • Memory Interface: I2C
  • Clock Frequency: 400kHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存114,312
EEPROM
EEPROM
896b (112 x 8)
I2C
400kHz
-
-
2.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
M95512-DFMN6TP
STMicroelectronics

IC EEPROM 512KBIT 5MHZ 8SOIC

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kb (64K x 8)
  • Memory Interface: SPI
  • Clock Frequency: 16MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: -
  • Voltage - Supply: 1.7 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存22,542
EEPROM
EEPROM
512Kb (64K x 8)
SPI
16MHz
5ms
-
1.7 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
8-SOIC (0.154", 3.90mm Width)
8-SO
MT53D1024M32D4DT-053 AIT:D
Micron Technology Inc.

IC DRAM 32G 1866MHZ FBGA

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM - Mobile LPDDR4
  • Memory Size: 32Gb (1G x 32)
  • Memory Interface: -
  • Clock Frequency: 1866MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 1.1V
  • Operating Temperature: -40°C ~ 95°C (TC)
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,176
DRAM
SDRAM - Mobile LPDDR4
32Gb (1G x 32)
-
1866MHz
-
-
1.1V
-40°C ~ 95°C (TC)
-
-
-
S29WS128N0LBFW010
Cypress Semiconductor Corp

IC MEMORY NOR

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,296
-
-
-
-
-
-
-
-
-
-
-
-
7025S20PFI8
IDT, Integrated Device Technology Inc

IC SRAM 128K PARALLEL 100TQFP

  • Memory Type: Volatile
  • Memory Format: SRAM
  • Technology: SRAM - Dual Port, Asynchronous
  • Memory Size: 128Kb (8K x 16)
  • Memory Interface: Parallel
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: 20ns
  • Access Time: 20ns
  • Voltage - Supply: 4.5 V ~ 5.5 V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 100-LQFP
  • Supplier Device Package: 100-TQFP (14x14)
封装: 100-LQFP
库存4,336
SRAM
SRAM - Dual Port, Asynchronous
128Kb (8K x 16)
Parallel
-
20ns
20ns
4.5 V ~ 5.5 V
-40°C ~ 85°C (TA)
Surface Mount
100-LQFP
100-TQFP (14x14)
MT29GZ5A3BPGGA-53AIT.87K TR
Micron Technology Inc.

IC FLASH RAM 4G PARALLEL MCP

  • Memory Type: -
  • Memory Format: -
  • Technology: -
  • Memory Size: -
  • Memory Interface: -
  • Clock Frequency: -
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,216
-
-
-
-
-
-
-
-
-
-
-
-
W25Q512JVFIM
Winbond Electronics

SPIFLASH 512M-BIT 4KB UNIFORM

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR
  • Memory Size: 512Mb (64M x 8)
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 133MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-SOIC (0.295", 7.50mm Width)
  • Supplier Device Package: 16-SOIC
封装: 16-SOIC (0.295", 7.50mm Width)
库存7,376
FLASH
FLASH - NOR
512Mb (64M x 8)
SPI - Quad I/O
133MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
16-SOIC (0.295", 7.50mm Width)
16-SOIC
GD25LQ20CE2GR
GigaDevice Semiconductor (HK) Limited

IC FLASH 2MBIT SPI/QUAD 8USON

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NOR (SLC)
  • Memory Size: 2Mbit
  • Memory Interface: SPI - Quad I/O
  • Clock Frequency: 90 MHz
  • Write Cycle Time - Word, Page: 80µs, 3ms
  • Access Time: 7 ns
  • Voltage - Supply: 1.65V ~ 2.1V
  • Operating Temperature: -40°C ~ 105°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-XFDFN Exposed Pad
  • Supplier Device Package: 8-USON (3x2)
封装: -
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FLASH
FLASH - NOR (SLC)
2Mbit
SPI - Quad I/O
90 MHz
80µs, 3ms
7 ns
1.65V ~ 2.1V
-40°C ~ 105°C (TA)
Surface Mount
8-XFDFN Exposed Pad
8-USON (3x2)
NDS36PBA-16ET
Insignis Technology Corporation

SDR 256MB X16 BGA 8X8(X1.2) PC16

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 256Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: 0°C ~ 70°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TFBGA
  • Supplier Device Package: 54-FBGA (8x8)
封装: -
Request a Quote
DRAM
SDRAM
256Mbit
LVTTL
166 MHz
-
-
3V ~ 3.6V
0°C ~ 70°C (TA)
Surface Mount
54-TFBGA
54-FBGA (8x8)
AS4C8M16SB-6TIN
Alliance Memory, Inc.

IC DRAM 128MBIT LVTTL 54TSOP II

  • Memory Type: Volatile
  • Memory Format: DRAM
  • Technology: SDRAM
  • Memory Size: 128Mbit
  • Memory Interface: LVTTL
  • Clock Frequency: 166 MHz
  • Write Cycle Time - Word, Page: 12ns
  • Access Time: 5 ns
  • Voltage - Supply: 3V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 54-TSOP (0.400", 10.16mm Width)
  • Supplier Device Package: 54-TSOP II
封装: -
库存114
DRAM
SDRAM
128Mbit
LVTTL
166 MHz
12ns
5 ns
3V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
54-TSOP (0.400", 10.16mm Width)
54-TSOP II
M24512E-FDW6TP
STMicroelectronics

512KBIT SERIAL I2C BUS EEPROM WI

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 512Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 4ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.6V ~ 5.5V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 8-TSSOP (0.173", 4.40mm Width)
  • Supplier Device Package: 8-TSSOP
封装: -
库存8,538
EEPROM
EEPROM
512Kbit
I2C
1 MHz
4ms
450 ns
1.6V ~ 5.5V
-40°C ~ 85°C (TA)
Surface Mount
8-TSSOP (0.173", 4.40mm Width)
8-TSSOP
MTFC32GAPALGT-S1-IT
Micron Technology Inc.

EMMC 256G

  • Memory Type: Non-Volatile
  • Memory Format: FLASH
  • Technology: FLASH - NAND (SLC)
  • Memory Size: 256Gbit
  • Memory Interface: eMMC_5.1
  • Clock Frequency: 200 MHz
  • Write Cycle Time - Word, Page: -
  • Access Time: -
  • Voltage - Supply: 2.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 153-TFBGA
  • Supplier Device Package: 153-TFBGA (11.5x13)
封装: -
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FLASH
FLASH - NAND (SLC)
256Gbit
eMMC_5.1
200 MHz
-
-
2.7V ~ 3.6V
-40°C ~ 85°C (TA)
Surface Mount
153-TFBGA
153-TFBGA (11.5x13)
AT24CSW010-STUM-T
Microchip Technology

IC EEPROM 1KBIT I2C TSOT23-5

  • Memory Type: Non-Volatile
  • Memory Format: EEPROM
  • Technology: EEPROM
  • Memory Size: 1Kbit
  • Memory Interface: I2C
  • Clock Frequency: 1 MHz
  • Write Cycle Time - Word, Page: 5ms
  • Access Time: 450 ns
  • Voltage - Supply: 1.7V ~ 3.6V
  • Operating Temperature: -40°C ~ 85°C (TC)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-5 Thin, TSOT-23-5
  • Supplier Device Package: TSOT-23-5
封装: -
库存25,344
EEPROM
EEPROM
1Kbit
I2C
1 MHz
5ms
450 ns
1.7V ~ 3.6V
-40°C ~ 85°C (TC)
Surface Mount
SOT-23-5 Thin, TSOT-23-5
TSOT-23-5