页 1828 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
QMP29GL01GP11FAIR12	Cypress Semiconductor Corp	IC FLASH 1GBIT 110NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 1Gb (128M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (11x13)	封装: 64-LBGA	库存5,408	FLASH	FLASH - NOR	1Gb (128M x 8)	Parallel	-	-	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (11x13)
MT29F1T08CUCABK8-6:A	Micron Technology Inc.	IC FLASH 1TBIT 167MHZ TLGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 1Tb (128G x 8) Memory Interface: Parallel Clock Frequency: 167MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,040	FLASH	FLASH - NAND	1Tb (128G x 8)	Parallel	167MHz	-	-	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	-	-	-
IS25LQ512B-JULE-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 512KBIT 104MHZ 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 512Kb (64K x 8) Memory Interface: SPI - Quad I/O Clock Frequency: 104MHz Write Cycle Time - Word, Page: 800µs Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封装: 8-UFDFN Exposed Pad	库存6,304	FLASH	FLASH - NOR	512Kb (64K x 8)	SPI - Quad I/O	104MHz	800µs	-	2.3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)
MT46H256M32R4JV-5 WT:B	Micron Technology Inc.	IC SDRAM 8GBIT 200MHZ 168FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 8Gb (256M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: 168-VFBGA	库存2,816	DRAM	SDRAM - Mobile LPDDR	8Gb (256M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-25°C ~ 85°C (TA)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
MT29C1G12MAADAFAKD-6 IT TR	Micron Technology Inc.	IC FLASH/LPDRAM 2GBIT 137TFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 137-TFBGA Supplier Device Package: 137-TFBGA (10.5x13)	封装: 137-TFBGA	库存3,696	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)	Parallel	166MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	137-TFBGA	137-TFBGA (10.5x13)
W9812G6JH-5	Winbond Electronics	IC SDRAM 128MBIT 200MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 4.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存15,084	DRAM	SDRAM	128Mb (8M x 16)	Parallel	200MHz	-	4.5ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
M25PE20-VMP6TG TR	Micron Technology Inc.	IC FLASH 2MBIT 75MHZ 8VFDFPN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Mb (256K x 8) Memory Interface: SPI Clock Frequency: 75MHz Write Cycle Time - Word, Page: 15ms, 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-VFQFPN (6x5)	封装: 8-VDFN Exposed Pad	库存4,448	FLASH	FLASH - NOR	2Mb (256K x 8)	SPI	75MHz	15ms, 3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-VDFN Exposed Pad	8-VFQFPN (6x5)
IDT71V3559SA80BG8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8NS 119BGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 119-BGA Supplier Device Package: 119-PBGA (14x22)	封装: 119-BGA	库存4,176	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	119-BGA	119-PBGA (14x22)
IS42S16100E-7BLI	ISSI, Integrated Silicon Solution Inc	IC SDRAM 16MBIT 143MHZ 60TFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: 143MHz Write Cycle Time - Word, Page: - Access Time: 5.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (6.4x10.1)	封装: 60-TFBGA	库存14,640	DRAM	SDRAM	16Mb (1M x 16)	Parallel	143MHz	-	5.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (6.4x10.1)
MT48LC4M32LFB5-8 IT:G	Micron Technology Inc.	IC SDRAM 128MBIT 125MHZ 90VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPSDR Memory Size: 128Mb (4M x 32) Memory Interface: Parallel Clock Frequency: 125MHz Write Cycle Time - Word, Page: 15ns Access Time: 7ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (8x13)	封装: 90-VFBGA	库存6,464	DRAM	SDRAM - Mobile LPSDR	128Mb (4M x 32)	Parallel	125MHz	15ns	7ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (8x13)
DS1250W-100	Maxim Integrated	IC NVSRAM 4MBIT 100NS 32EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP Module (0.600", 15.24mm) Supplier Device Package: 32-EDIP	封装: 32-DIP Module (0.600", 15.24mm)	库存7,168	NVSRAM	NVSRAM (Non-Volatile SRAM)	4Mb (512K x 8)	Parallel	-	100ns	100ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Through Hole	32-DIP Module (0.600", 15.24mm)	32-EDIP
AT28LV64B-20JI	Microchip Technology	IC EEPROM 64KBIT 200NS 32PLCC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 64Kb (8K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ms Access Time: 200ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 32-LCC (J-Lead) Supplier Device Package: 32-PLCC	封装: 32-LCC (J-Lead)	库存2,128	EEPROM	EEPROM	64Kb (8K x 8)	Parallel	-	10ms	200ns	3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	32-LCC (J-Lead)	32-PLCC
AT28C17E-20PI	Microchip Technology	IC EEPROM 16KBIT 200NS 28DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 200µs Access Time: 200ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Through Hole Package / Case: 28-DIP (0.600", 15.24mm) Supplier Device Package: 28-PDIP	封装: 28-DIP (0.600", 15.24mm)	库存4,560	EEPROM	EEPROM	16Kb (2K x 8)	Parallel	-	200µs	200ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Through Hole	28-DIP (0.600", 15.24mm)	28-PDIP
70V3389S5PRFI8	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 5NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (64K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 5ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: 128-LQFP	库存6,848	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (64K x 18)	Parallel	-	-	5ns	3.15 V ~ 3.45 V	-40°C ~ 85°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
DS1345WP-150+	Maxim Integrated	IC NVSRAM 1MBIT 150NS 34PCM Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: 150ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 34-PowerCap? Module Supplier Device Package: 34-PowerCap Module	封装: 34-PowerCap? Module	库存5,408	NVSRAM	NVSRAM (Non-Volatile SRAM)	1Mb (128K x 8)	Parallel	-	150ns	150ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	34-PowerCap? Module	34-PowerCap Module
7006S20PF	IDT, Integrated Device Technology Inc	IC SRAM 128KBIT 20NS 64TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 128Kb (16K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ns Access Time: 20ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 64-LQFP Supplier Device Package: 64-TQFP (14x14)	封装: 64-LQFP	库存5,200	SRAM	SRAM - Dual Port, Asynchronous	128Kb (16K x 8)	Parallel	-	20ns	20ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	64-LQFP	64-TQFP (14x14)
IS62WV102416BLL-25TLI	ISSI, Integrated Silicon Solution Inc	IC SRAM 16MBIT 25NS 48TSOP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 16Mb (1M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 25ns Access Time: 25ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 48-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 48-TSOP I	封装: 48-TFSOP (0.724", 18.40mm Width)	库存19,716	SRAM	SRAM - Asynchronous	16Mb (1M x 16)	Parallel	-	25ns	25ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	48-TFSOP (0.724", 18.40mm Width)	48-TSOP I
M58LR128KT85ZB6F TR	Micron Technology Inc.	IC FLASH 128MBIT 85NS 56VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 85ns Access Time: 85ns Voltage - Supply: 1.7 V ~ 2 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-VFBGA Supplier Device Package: 56-VFBGA (7.7x9)	封装: 56-VFBGA	库存2,144	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	66MHz	85ns	85ns	1.7 V ~ 2 V	-40°C ~ 85°C (TA)	Surface Mount	56-VFBGA	56-VFBGA (7.7x9)
AS4C8M16SA-6TANTR	Alliance Memory, Inc.	IC SDRAM 128MBIT 166MHZ 54TSOP Memory Type: Volatile Memory Format: DRAM Technology: SDRAM Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 12ns Access Time: 5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 54-TSOP (0.400", 10.16mm Width) Supplier Device Package: 54-TSOP II	封装: 54-TSOP (0.400", 10.16mm Width)	库存5,056	DRAM	SDRAM	128Mb (8M x 16)	Parallel	166MHz	12ns	5ns	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	Surface Mount	54-TSOP (0.400", 10.16mm Width)	54-TSOP II
DS28E25P+	Maxim Integrated	IC EEPROM 4KBIT 1WIRE 6TSOC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (4K x 1) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 2µs Voltage - Supply: 2.97 V ~ 3.63 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 6-LSOJ (0.148", 3.76mm Width) Supplier Device Package: 6-TSOC	封装: 6-LSOJ (0.148", 3.76mm Width)	库存5,632	EEPROM	EEPROM	4Kb (4K x 1)	1-Wire?	-	-	2µs	2.97 V ~ 3.63 V	-40°C ~ 85°C (TA)	Surface Mount	6-LSOJ (0.148", 3.76mm Width)	6-TSOC
AT45DB641E-UUN2B-T	Adesto Technologies	IC FLASH 64MBIT 85MHZ 44WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 64Mb (256 Bytes x 32K pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 5ms Access Time: - Voltage - Supply: 1.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 44-UFBGA, WLCSP Supplier Device Package: 44-WLCSP (3.5x4.2)	封装: 44-UFBGA, WLCSP	库存3,680	FLASH	FLASH	64Mb (256 Bytes x 32K pages)	SPI	85MHz	8µs, 5ms	-	1.7 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	44-UFBGA, WLCSP	44-WLCSP (3.5x4.2)
BR25L010F-WE2	Rohm Semiconductor	IC EEPROM 1KBIT 5MHZ 8SOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (128 x 8) Memory Interface: SPI Clock Frequency: 5MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: 8-SOIC (0.173", 4.40mm Width)	库存25,200	EEPROM	EEPROM	1Kb (128 x 8)	SPI	5MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
BR25H320FJ-2CE2	Rohm Semiconductor	IC EEPROM 32K SPI 10MHZ 8SOPJ Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 32Kb (4K x 8) Memory Interface: SPI Clock Frequency: 10MHz Write Cycle Time - Word, Page: 4ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP-J	封装: 8-SOIC (0.154", 3.90mm Width)	库存25,944	EEPROM	EEPROM	32Kb (4K x 8)	SPI	10MHz	4ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP-J
NM93C46LZM8	ON Semiconductor	IC EEPROM 1K SPI 250KHZ 8SO Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 1Kb (64 x 16) Memory Interface: SPI Clock Frequency: 250kHz Write Cycle Time - Word, Page: 15ms Access Time: - Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存4,960	EEPROM	EEPROM	1Kb (64 x 16)	SPI	250kHz	15ms	-	2.7 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
S29CD032J0PQFM010	Cypress Semiconductor Corp	IC FLASH 32M PARALLEL 80PQFP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (1M x 32) Memory Interface: Parallel Clock Frequency: 66MHz Write Cycle Time - Word, Page: 60ns Access Time: 54ns Voltage - Supply: 1.65 V ~ 2.75 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 80-BQFP Supplier Device Package: 80-PQFP (20x20)	封装: 80-BQFP	库存6,128	FLASH	FLASH - NOR	32Mb (1M x 32)	Parallel	66MHz	60ns	54ns	1.65 V ~ 2.75 V	-40°C ~ 125°C (TA)	Surface Mount	80-BQFP	80-PQFP (20x20)
MT25QL02GCBB8E12-0AUT	Micron Technology Inc.	IC FLASH NOR SER 2GB 24TPBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 2Gb (256M x 8) Memory Interface: SPI Clock Frequency: 133MHz Write Cycle Time - Word, Page: 1.8ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 24-TBGA Supplier Device Package: 24-T-PBGA (6x8)	封装: 24-TBGA	库存6,176	FLASH	FLASH - NOR	2Gb (256M x 8)	SPI	133MHz	1.8ms	-	2.7V ~ 3.6V	-40°C ~ 125°C (TA)	Surface Mount	24-TBGA	24-T-PBGA (6x8)
MB85RE4M2TFN-G-JAE2	Fujitsu Semiconductor Memory Solution	IC FRAM 4MBIT 44TSOP Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 4Mbit Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: 150ns Access Time: - Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP	封装: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	4Mbit	-	-	150ns	-	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP
70824S35PFI	Renesas Electronics Corporation	IC RAM Memory Type: Volatile Memory Format: SRAM Technology: SRAM Memory Size: 64Kbit Memory Interface: Parallel Clock Frequency: 25 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 80-LQFP Supplier Device Package: 80-TQFP (14x14)	封装: -	Request a Quote	SRAM	SRAM	64Kbit	Parallel	25 MHz	35ns	35 ns	4.5V ~ 5.5V	-40°C ~ 85°C (TA)	Surface Mount	80-LQFP	80-TQFP (14x14)
CG8230AA	Infineon Technologies	IC SRAM MICROPOWER Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
SST26VF080AT-104I-MF	Microchip Technology	IC FLASH 8MBIT SPI/QUAD 8WDFN Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 8Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 1.5ms Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WDFN (5x6)	封装: -	Request a Quote	FLASH	FLASH	8Mbit	SPI - Quad I/O	104 MHz	1.5ms	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WDFN (5x6)

QMP29GL01GP11FAIR12

Cypress Semiconductor Corp

IC FLASH 1GBIT 110NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 1Gb (128M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (11x13)

封装: 64-LBGA

库存5,408

FLASH

FLASH - NOR

1Gb (128M x 8)

Parallel

-

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (11x13)

MT29F1T08CUCABK8-6:A

Micron Technology Inc.

IC FLASH 1TBIT 167MHZ TLGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 1Tb (128G x 8)
Memory Interface: Parallel
Clock Frequency: 167MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,040

FLASH

FLASH - NAND

1Tb (128G x 8)

Parallel

167MHz

-

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

-

IS25LQ512B-JULE-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 512KBIT 104MHZ 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Kb (64K x 8)
Memory Interface: SPI - Quad I/O
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 800µs
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封装: 8-UFDFN Exposed Pad

库存6,304

FLASH

FLASH - NOR

512Kb (64K x 8)

SPI - Quad I/O

104MHz

800µs

-

2.3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)

MT46H256M32R4JV-5 WT:B

Micron Technology Inc.

IC SDRAM 8GBIT 200MHZ 168FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 8Gb (256M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: 168-VFBGA

库存2,816

DRAM

SDRAM - Mobile LPDDR

8Gb (256M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-25°C ~ 85°C (TA)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

MT29C1G12MAADAFAKD-6 IT TR

Micron Technology Inc.

IC FLASH/LPDRAM 2GBIT 137TFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 137-TFBGA
Supplier Device Package: 137-TFBGA (10.5x13)

封装: 137-TFBGA

库存3,696

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

1Gb (128M x 8)(NAND), 1Gb (32M x 32)(LPDRAM)

Parallel

166MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

137-TFBGA

137-TFBGA (10.5x13)

W9812G6JH-5

Winbond Electronics

IC SDRAM 128MBIT 200MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 4.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存15,084

DRAM

SDRAM

128Mb (8M x 16)

Parallel

200MHz

-

4.5ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

M25PE20-VMP6TG TR

Micron Technology Inc.

IC FLASH 2MBIT 75MHZ 8VFDFPN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Mb (256K x 8)
Memory Interface: SPI
Clock Frequency: 75MHz
Write Cycle Time - Word, Page: 15ms, 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-VFQFPN (6x5)

封装: 8-VDFN Exposed Pad

库存4,448

FLASH

FLASH - NOR

2Mb (256K x 8)

SPI

75MHz

15ms, 3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-VDFN Exposed Pad

8-VFQFPN (6x5)

IDT71V3559SA80BG8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8NS 119BGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 119-BGA
Supplier Device Package: 119-PBGA (14x22)

封装: 119-BGA

库存4,176

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

119-BGA

119-PBGA (14x22)

IS42S16100E-7BLI

ISSI, Integrated Silicon Solution Inc

IC SDRAM 16MBIT 143MHZ 60TFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: 143MHz
Write Cycle Time - Word, Page: -
Access Time: 5.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (6.4x10.1)

封装: 60-TFBGA

库存14,640

DRAM

SDRAM

16Mb (1M x 16)

Parallel

143MHz

-

5.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (6.4x10.1)

MT48LC4M32LFB5-8 IT:G

Micron Technology Inc.

IC SDRAM 128MBIT 125MHZ 90VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPSDR
Memory Size: 128Mb (4M x 32)
Memory Interface: Parallel
Clock Frequency: 125MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 7ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (8x13)

封装: 90-VFBGA

库存6,464

DRAM

SDRAM - Mobile LPSDR

128Mb (4M x 32)

Parallel

125MHz

15ns

7ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (8x13)

DS1250W-100

Maxim Integrated

IC NVSRAM 4MBIT 100NS 32EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP Module (0.600", 15.24mm)
Supplier Device Package: 32-EDIP

封装: 32-DIP Module (0.600", 15.24mm)

库存7,168

NVSRAM

NVSRAM (Non-Volatile SRAM)

4Mb (512K x 8)

Parallel

-

100ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Through Hole

32-DIP Module (0.600", 15.24mm)

32-EDIP

AT28LV64B-20JI

Microchip Technology

IC EEPROM 64KBIT 200NS 32PLCC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 64Kb (8K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ms
Access Time: 200ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-LCC (J-Lead)
Supplier Device Package: 32-PLCC

封装: 32-LCC (J-Lead)

库存2,128

EEPROM

64Kb (8K x 8)

Parallel

-

10ms

200ns

3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

32-LCC (J-Lead)

32-PLCC

AT28C17E-20PI

Microchip Technology

IC EEPROM 16KBIT 200NS 28DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 200µs
Access Time: 200ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Through Hole
Package / Case: 28-DIP (0.600", 15.24mm)
Supplier Device Package: 28-PDIP

封装: 28-DIP (0.600", 15.24mm)

库存4,560

EEPROM

16Kb (2K x 8)

Parallel

-

200µs

200ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Through Hole

28-DIP (0.600", 15.24mm)

28-PDIP

70V3389S5PRFI8

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 5NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (64K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 5ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: 128-LQFP

库存6,848

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (64K x 18)

Parallel

-

5ns

3.15 V ~ 3.45 V

-40°C ~ 85°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

DS1345WP-150+

Maxim Integrated

IC NVSRAM 1MBIT 150NS 34PCM

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: 150ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 34-PowerCap? Module
Supplier Device Package: 34-PowerCap Module

封装: 34-PowerCap? Module

库存5,408

NVSRAM

NVSRAM (Non-Volatile SRAM)

1Mb (128K x 8)

Parallel

-

150ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

34-PowerCap? Module

34-PowerCap Module

7006S20PF

IDT, Integrated Device Technology Inc

IC SRAM 128KBIT 20NS 64TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 128Kb (16K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ns
Access Time: 20ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Supplier Device Package: 64-TQFP (14x14)

封装: 64-LQFP

库存5,200

SRAM

SRAM - Dual Port, Asynchronous

128Kb (16K x 8)

Parallel

-

20ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

64-LQFP

64-TQFP (14x14)

IS62WV102416BLL-25TLI

ISSI, Integrated Silicon Solution Inc

IC SRAM 16MBIT 25NS 48TSOP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 16Mb (1M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 25ns
Access Time: 25ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 48-TSOP I

封装: 48-TFSOP (0.724", 18.40mm Width)

库存19,716

SRAM

SRAM - Asynchronous

16Mb (1M x 16)

Parallel

-

25ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

48-TFSOP (0.724", 18.40mm Width)

48-TSOP I

M58LR128KT85ZB6F TR

Micron Technology Inc.

IC FLASH 128MBIT 85NS 56VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 85ns
Access Time: 85ns
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-VFBGA (7.7x9)

封装: 56-VFBGA

库存2,144

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

66MHz

85ns

1.7 V ~ 2 V

-40°C ~ 85°C (TA)

Surface Mount

56-VFBGA

56-VFBGA (7.7x9)

AS4C8M16SA-6TANTR

Alliance Memory, Inc.

IC SDRAM 128MBIT 166MHZ 54TSOP

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 12ns
Access Time: 5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 54-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 54-TSOP II

封装: 54-TSOP (0.400", 10.16mm Width)

库存5,056

DRAM

SDRAM

128Mb (8M x 16)

Parallel

166MHz

12ns

5ns

3 V ~ 3.6 V

-40°C ~ 105°C (TA)

Surface Mount

54-TSOP (0.400", 10.16mm Width)

54-TSOP II

DS28E25P+

Maxim Integrated

IC EEPROM 4KBIT 1WIRE 6TSOC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (4K x 1)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 2µs
Voltage - Supply: 2.97 V ~ 3.63 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-LSOJ (0.148", 3.76mm Width)
Supplier Device Package: 6-TSOC

封装: 6-LSOJ (0.148", 3.76mm Width)

库存5,632

EEPROM

4Kb (4K x 1)

1-Wire?

-

2µs

2.97 V ~ 3.63 V

-40°C ~ 85°C (TA)

Surface Mount

6-LSOJ (0.148", 3.76mm Width)

6-TSOC

AT45DB641E-UUN2B-T

Adesto Technologies

IC FLASH 64MBIT 85MHZ 44WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 64Mb (256 Bytes x 32K pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 5ms
Access Time: -
Voltage - Supply: 1.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 44-UFBGA, WLCSP
Supplier Device Package: 44-WLCSP (3.5x4.2)

封装: 44-UFBGA, WLCSP

库存3,680

FLASH

64Mb (256 Bytes x 32K pages)

SPI

85MHz

8µs, 5ms

-

1.7 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

44-UFBGA, WLCSP

44-WLCSP (3.5x4.2)

BR25L010F-WE2

Rohm Semiconductor

IC EEPROM 1KBIT 5MHZ 8SOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (128 x 8)
Memory Interface: SPI
Clock Frequency: 5MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: 8-SOIC (0.173", 4.40mm Width)

库存25,200

EEPROM

1Kb (128 x 8)

SPI

5MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

BR25H320FJ-2CE2

Rohm Semiconductor

IC EEPROM 32K SPI 10MHZ 8SOPJ

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 32Kb (4K x 8)
Memory Interface: SPI
Clock Frequency: 10MHz
Write Cycle Time - Word, Page: 4ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP-J

封装: 8-SOIC (0.154", 3.90mm Width)

库存25,944

EEPROM

32Kb (4K x 8)

SPI

10MHz

4ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP-J

NM93C46LZM8

ON Semiconductor

IC EEPROM 1K SPI 250KHZ 8SO

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 1Kb (64 x 16)
Memory Interface: SPI
Clock Frequency: 250kHz
Write Cycle Time - Word, Page: 15ms
Access Time: -
Voltage - Supply: 2.7 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存4,960

EEPROM

1Kb (64 x 16)

SPI

250kHz

15ms

-

2.7 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

S29CD032J0PQFM010

Cypress Semiconductor Corp

IC FLASH 32M PARALLEL 80PQFP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (1M x 32)
Memory Interface: Parallel
Clock Frequency: 66MHz
Write Cycle Time - Word, Page: 60ns
Access Time: 54ns
Voltage - Supply: 1.65 V ~ 2.75 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-BQFP
Supplier Device Package: 80-PQFP (20x20)

封装: 80-BQFP

库存6,128

FLASH

FLASH - NOR

32Mb (1M x 32)

Parallel

66MHz

60ns

54ns

1.65 V ~ 2.75 V

-40°C ~ 125°C (TA)

Surface Mount

80-BQFP

80-PQFP (20x20)

MT25QL02GCBB8E12-0AUT

Micron Technology Inc.

IC FLASH NOR SER 2GB 24TPBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 2Gb (256M x 8)
Memory Interface: SPI
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 1.8ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)

封装: 24-TBGA

库存6,176

FLASH

FLASH - NOR

2Gb (256M x 8)

SPI

133MHz

1.8ms

-

2.7V ~ 3.6V

-40°C ~ 125°C (TA)

Surface Mount

24-TBGA

24-T-PBGA (6x8)

MB85RE4M2TFN-G-JAE2

Fujitsu Semiconductor Memory Solution

IC FRAM 4MBIT 44TSOP

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 4Mbit
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: 150ns
Access Time: -
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP

封装: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

4Mbit

-

150ns

-

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP

70824S35PFI

Renesas Electronics Corporation

IC RAM

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM
Memory Size: 64Kbit
Memory Interface: Parallel
Clock Frequency: 25 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 80-LQFP
Supplier Device Package: 80-TQFP (14x14)

封装: -

Request a Quote

SRAM

64Kbit

Parallel

25 MHz

35ns

35 ns

4.5V ~ 5.5V

-40°C ~ 85°C (TA)

Surface Mount

80-LQFP

80-TQFP (14x14)

CG8230AA

Infineon Technologies

IC SRAM MICROPOWER

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

SST26VF080AT-104I-MF

Microchip Technology

IC FLASH 8MBIT SPI/QUAD 8WDFN

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 8Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 1.5ms
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WDFN (5x6)

封装: -

Request a Quote

FLASH

8Mbit

SPI - Quad I/O

104 MHz

1.5ms

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WDFN (5x6)