页 1819 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
S29GL064N11FFIV22	Cypress Semiconductor Corp	IC FLASH 64MBIT 110NS 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-Fortified BGA (13x11)	封装: 64-LBGA	库存6,960	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-Fortified BGA (13x11)
W25Q128FVFIQ TR	Winbond Electronics	IC FLASH 128MBIT 104MHZ 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: SPI Clock Frequency: 104MHz Write Cycle Time - Word, Page: 3ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.295", 7.50mm Width)	库存5,232	FLASH	FLASH - NOR	128Mb (16M x 8)	SPI	104MHz	3ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT29C1G12MAAIAFAMD-6 IT	Micron Technology Inc.	IC FLASH/LPDRAM 1.5GBIT 130VFBGA Memory Type: Non-Volatile Memory Format: FLASH, RAM Technology: FLASH - NAND, Mobile LPDRAM Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 130-VFBGA Supplier Device Package: 130-VFBGA (8x9)	封装: 130-VFBGA	库存3,856	FLASH, RAM	FLASH - NAND, Mobile LPDRAM	1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)	Parallel	166MHz	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	130-VFBGA	130-VFBGA (8x9)
MT46H16M32LFCM-5 IT:B	Micron Technology Inc.	IC SDRAM 512MBIT 200MHZ 90BGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR Memory Size: 512Mb (16M x 32) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.0ns Voltage - Supply: 1.7 V ~ 1.95 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 90-VFBGA Supplier Device Package: 90-VFBGA (10x13)	封装: 90-VFBGA	库存3,328	DRAM	SDRAM - Mobile LPDDR	512Mb (16M x 32)	Parallel	200MHz	15ns	5.0ns	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	Surface Mount	90-VFBGA	90-VFBGA (10x13)
IDT71V2559S85PF8	IDT, Integrated Device Technology Inc	IC SRAM 4.5MBIT 8.5NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 4.5Mb (256K x 18) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8.5ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,176	SRAM	SRAM - Synchronous ZBT	4.5Mb (256K x 18)	Parallel	-	-	8.5ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
IDT71V124SA12TY	IDT, Integrated Device Technology Inc	IC SRAM 1MBIT 12NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 32-SOJ	封装: 32-BSOJ (0.300", 7.62mm Width)	库存30,720	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-BSOJ (0.300", 7.62mm Width)	32-SOJ
M29F800DB70M6	Micron Technology Inc.	IC FLASH 8MBIT 70NS 44SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 8Mb (1M x 8, 512K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-SOIC (0.525", 13.34mm Width) Supplier Device Package: 44-SO	封装: 44-SOIC (0.525", 13.34mm Width)	库存7,296	FLASH	FLASH - NOR	8Mb (1M x 8, 512K x 16)	Parallel	-	70ns	70ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	44-SOIC (0.525", 13.34mm Width)	44-SO
CY14B256L-SZ45XCT	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 45NS 32SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 45ns Access Time: 45ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.295", 7.50mm Width) Supplier Device Package: 32-SOIC	封装: 32-SOIC (0.295", 7.50mm Width)	库存20,196	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	45ns	45ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	32-SOIC (0.295", 7.50mm Width)	32-SOIC
IS61NLP102418-200TQ	ISSI, Integrated Silicon Solution Inc	IC SRAM 18MBIT 200MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 18Mb (1M x 18) Memory Interface: Parallel Clock Frequency: 200MHz Write Cycle Time - Word, Page: - Access Time: 3.1ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x20)	封装: 100-LQFP	库存7,668	SRAM	SRAM - Synchronous	18Mb (1M x 18)	Parallel	200MHz	-	3.1ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x20)
AT24C02A-10TU-1.8	Microchip Technology	IC EEPROM 2KBIT 400KHZ 8TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 2Kb (256 x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存4,624	EEPROM	EEPROM	2Kb (256 x 8)	I2C	400kHz	5ms	900ns	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
AT25128T2-10TC	Microchip Technology	IC EEPROM 128KBIT 3MHZ 20TSSOP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 128Kb (16K x 8) Memory Interface: SPI Clock Frequency: 3MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 20-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 20-TSSOP	封装: 20-TSSOP (0.173", 4.40mm Width)	库存4,816	EEPROM	EEPROM	128Kb (16K x 8)	SPI	3MHz	5ms	-	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	20-TSSOP (0.173", 4.40mm Width)	20-TSSOP
AT29BV040A-25TC	Microchip Technology	IC FLASH 4MBIT 250NS 32TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 20ms Access Time: 250ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TC) Mounting Type: Surface Mount Package / Case: 32-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 32-TSOP	封装: 32-TFSOP (0.724", 18.40mm Width)	库存18,360	FLASH	FLASH	4Mb (512K x 8)	Parallel	-	20ms	250ns	2.7 V ~ 3.6 V	0°C ~ 70°C (TC)	Surface Mount	32-TFSOP (0.724", 18.40mm Width)	32-TSOP
7140SA55CB	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 55NS SB48 Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-SIDE BRAZED	封装: 48-DIP (0.600", 15.24mm)	库存6,624	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	55ns	55ns	4.5 V ~ 5.5 V	-55°C ~ 125°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-SIDE BRAZED
71V65703S80PFG8	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 8NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,896	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	-	-	8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
CG8285AA	Cypress Semiconductor Corp	IC MEMORY F-RAM SER 8SOIC Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,520	-	-	-	-	-	-	-	-	-	-	-	-
N25Q064A13ESEH0E	Micron Technology Inc.	IC FLASH 64MBIT 108MHZ 8SO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (16M x 4) Memory Interface: SPI Clock Frequency: 108MHz Write Cycle Time - Word, Page: 8ms, 5ms Access Time: - Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SO W	封装: 8-SOIC (0.209", 5.30mm Width)	库存5,584	FLASH	FLASH - NOR	64Mb (16M x 4)	SPI	108MHz	8ms, 5ms	-	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SO W
71V256SA12YG8	IDT, Integrated Device Technology Inc	IC SRAM 256KBIT 12NS 28SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 12ns Access Time: 12ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 28-BSOJ (0.300", 7.62mm Width) Supplier Device Package: 28-SOJ	封装: 28-BSOJ (0.300", 7.62mm Width)	库存7,472	SRAM	SRAM - Asynchronous	256Kb (32K x 8)	Parallel	-	12ns	12ns	3 V ~ 3.6 V	0°C ~ 70°C (TA)	Surface Mount	28-BSOJ (0.300", 7.62mm Width)	28-SOJ
DS2502-E64+	Maxim Integrated	IC OTP 1KBIT 1WIRE TO92-3 Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 1Kb (1K x 1) Memory Interface: 1-Wire? Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 15µs Voltage - Supply: - Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Supplier Device Package: TO-92-3	封装: TO-226-3, TO-92-3 (TO-226AA)	库存6,156	EPROM	EPROM - OTP	1Kb (1K x 1)	1-Wire?	-	-	15µs	-	-40°C ~ 85°C (TA)	Through Hole	TO-226-3, TO-92-3 (TO-226AA)	TO-92-3
CY7C1019D-10VXI	Cypress Semiconductor Corp	IC SRAM 1MBIT 10NS 32SOJ Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mb (128K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-BSOJ (0.400", 10.16mm Width) Supplier Device Package: 32-SOJ	封装: 32-BSOJ (0.400", 10.16mm Width)	库存9,612	SRAM	SRAM - Asynchronous	1Mb (128K x 8)	Parallel	-	10ns	10ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-BSOJ (0.400", 10.16mm Width)	32-SOJ
AT28HC256F-90SU	Microchip Technology	IC EEPROM 256KBIT 90NS 28SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 3ms Access Time: 90ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Supplier Device Package: 28-SOIC	封装: 28-SOIC (0.295", 7.50mm Width)	库存6,064	EEPROM	EEPROM	256Kb (32K x 8)	Parallel	-	3ms	90ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TC)	Surface Mount	28-SOIC (0.295", 7.50mm Width)	28-SOIC
IS43R16320E-6BL	ISSI, Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 166MHZ Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - DDR Memory Size: 512Mb (32M x 16) Memory Interface: Parallel Clock Frequency: 166MHz Write Cycle Time - Word, Page: 15ns Access Time: 700ps Voltage - Supply: 2.3 V ~ 2.7 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 60-TFBGA Supplier Device Package: 60-TFBGA (13x8)	封装: 60-TFBGA	库存6,128	DRAM	SDRAM - DDR	512Mb (32M x 16)	Parallel	166MHz	15ns	700ps	2.3 V ~ 2.7 V	0°C ~ 70°C (TA)	Surface Mount	60-TFBGA	60-TFBGA (13x8)
S29GL064N11DFIV20	Cypress Semiconductor Corp	IC FLASH 64M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 64Mb (8M x 8, 4M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (9x9)	封装: 64-LBGA	库存4,416	FLASH	FLASH - NOR	64Mb (8M x 8, 4M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (9x9)
AT25PE20-MHN-T	Adesto Technologies	8-UDFN(5X6) IND TEMP1.65V Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 2M (1024 pages x 256 bytes) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 3ms Access Time: - Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-UDFN Exposed Pad Supplier Device Package: 8-UDFN (5x6)	封装: 8-UDFN Exposed Pad	库存3,696	FLASH	FLASH	2M (1024 pages x 256 bytes)	SPI	85MHz	8µs, 3ms	-	1.65 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-UDFN Exposed Pad	8-UDFN (5x6)
MT29F1T08EBLCHD4-QA-C-TR	Micron Technology Inc.	TLC 1T 128GX8 FBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
CY7C235A-25PC	Cypress Semiconductor Corp	IC EPROM 8KBIT PARALLEL Memory Type: Non-Volatile Memory Format: EPROM Technology: EPROM - OTP Memory Size: 8Kbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 25 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	EPROM	EPROM - OTP	8Kbit	Parallel	-	-	25 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	-	-	-
W74M12JWZPIQ-TR	Winbond Electronics	IC FLASH 128MBIT SPI/QUAD 8WSON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND Memory Size: 128Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-WDFN Exposed Pad Supplier Device Package: 8-WSON (6x5)	封装: -	Request a Quote	FLASH	FLASH - NAND	128Mbit	SPI - Quad I/O	104 MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C (TA)	Surface Mount	8-WDFN Exposed Pad	8-WSON (6x5)
AT25XE321D-UUN-T	Renesas Electronics Corporation	IC FLASH 32MBIT SPI/QUAD 12WLCSP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mbit Memory Interface: SPI - Quad I/O Clock Frequency: 104 MHz Write Cycle Time - Word, Page: 60µs, 12ms Access Time: - Voltage - Supply: 1.65V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 12-XFBGA, WLCSP Supplier Device Package: 12-WLCSP (2.39x1.77)	封装: -	库存26,550	FLASH	FLASH - NOR	32Mbit	SPI - Quad I/O	104 MHz	60µs, 12ms	-	1.65V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	12-XFBGA, WLCSP	12-WLCSP (2.39x1.77)
W77Q32JWSFIN	Winbond Electronics	IC FLASH 32MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH	32Mbit	SPI - Quad I/O, QPI	104 MHz	-	-	1.7V ~ 1.95V	-40°C ~ 85°C	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
S70KS1282GABHB023	Infineon Technologies	IC PSRAM 128MBIT HYPERBUS 24FBGA Memory Type: Volatile Memory Format: PSRAM Technology: PSRAM (Pseudo SRAM) Memory Size: 128Mbit Memory Interface: HyperBus Clock Frequency: 200 MHz Write Cycle Time - Word, Page: 35ns Access Time: 35 ns Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 24-VBGA Supplier Device Package: 24-FBGA (6x8)	封装: -	Request a Quote	PSRAM	PSRAM (Pseudo SRAM)	128Mbit	HyperBus	200 MHz	35ns	35 ns	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	24-VBGA	24-FBGA (6x8)
CY7C1032-10JC	Cypress Semiconductor Corp	IC SRAM 1.152MBIT PAR 52PLCC Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous Memory Size: 1.152Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 10ns Access Time: 10 ns Voltage - Supply: 4.5V ~ 5.5V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 52-LCC (J-Lead) Supplier Device Package: 52-PLCC (19.13x19.13)	封装: -	Request a Quote	SRAM	SRAM - Synchronous	1.152Mbit	Parallel	-	10ns	10 ns	4.5V ~ 5.5V	0°C ~ 70°C (TA)	Surface Mount	52-LCC (J-Lead)	52-PLCC (19.13x19.13)

S29GL064N11FFIV22

Cypress Semiconductor Corp

IC FLASH 64MBIT 110NS 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-Fortified BGA (13x11)

封装: 64-LBGA

库存6,960

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-Fortified BGA (13x11)

W25Q128FVFIQ TR

Winbond Electronics

IC FLASH 128MBIT 104MHZ 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: SPI
Clock Frequency: 104MHz
Write Cycle Time - Word, Page: 3ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.295", 7.50mm Width)

库存5,232

FLASH

FLASH - NOR

128Mb (16M x 8)

SPI

104MHz

3ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT29C1G12MAAIAFAMD-6 IT

Micron Technology Inc.

IC FLASH/LPDRAM 1.5GBIT 130VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH, RAM
Technology: FLASH - NAND, Mobile LPDRAM
Memory Size: 1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 130-VFBGA
Supplier Device Package: 130-VFBGA (8x9)

封装: 130-VFBGA

库存3,856

FLASH, RAM

FLASH - NAND, Mobile LPDRAM

1Gb (128M x 8)(NAND), 512Mb (16M x 32)(LPDRAM)

Parallel

166MHz

-

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

130-VFBGA

130-VFBGA (8x9)

MT46H16M32LFCM-5 IT:B

Micron Technology Inc.

IC SDRAM 512MBIT 200MHZ 90BGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR
Memory Size: 512Mb (16M x 32)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.0ns
Voltage - Supply: 1.7 V ~ 1.95 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 90-VFBGA
Supplier Device Package: 90-VFBGA (10x13)

封装: 90-VFBGA

库存3,328

DRAM

SDRAM - Mobile LPDDR

512Mb (16M x 32)

Parallel

200MHz

15ns

5.0ns

1.7 V ~ 1.95 V

-40°C ~ 85°C (TA)

Surface Mount

90-VFBGA

90-VFBGA (10x13)

IDT71V2559S85PF8

IDT, Integrated Device Technology Inc

IC SRAM 4.5MBIT 8.5NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 4.5Mb (256K x 18)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8.5ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,176

SRAM

SRAM - Synchronous ZBT

4.5Mb (256K x 18)

Parallel

-

8.5ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

IDT71V124SA12TY

IDT, Integrated Device Technology Inc

IC SRAM 1MBIT 12NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 32-SOJ

封装: 32-BSOJ (0.300", 7.62mm Width)

库存30,720

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-BSOJ (0.300", 7.62mm Width)

32-SOJ

M29F800DB70M6

Micron Technology Inc.

IC FLASH 8MBIT 70NS 44SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 8Mb (1M x 8, 512K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-SOIC (0.525", 13.34mm Width)
Supplier Device Package: 44-SO

封装: 44-SOIC (0.525", 13.34mm Width)

库存7,296

FLASH

FLASH - NOR

8Mb (1M x 8, 512K x 16)

Parallel

-

70ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

44-SOIC (0.525", 13.34mm Width)

44-SO

CY14B256L-SZ45XCT

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 45NS 32SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 45ns
Access Time: 45ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC

封装: 32-SOIC (0.295", 7.50mm Width)

库存20,196

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

45ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

32-SOIC (0.295", 7.50mm Width)

32-SOIC

IS61NLP102418-200TQ

ISSI, Integrated Silicon Solution Inc

IC SRAM 18MBIT 200MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 18Mb (1M x 18)
Memory Interface: Parallel
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: -
Access Time: 3.1ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x20)

封装: 100-LQFP

库存7,668

SRAM

SRAM - Synchronous

18Mb (1M x 18)

Parallel

200MHz

-

3.1ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x20)

AT24C02A-10TU-1.8

Microchip Technology

IC EEPROM 2KBIT 400KHZ 8TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 2Kb (256 x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存4,624

EEPROM

2Kb (256 x 8)

I2C

400kHz

5ms

900ns

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

AT25128T2-10TC

Microchip Technology

IC EEPROM 128KBIT 3MHZ 20TSSOP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 128Kb (16K x 8)
Memory Interface: SPI
Clock Frequency: 3MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 20-TSSOP

封装: 20-TSSOP (0.173", 4.40mm Width)

库存4,816

EEPROM

128Kb (16K x 8)

SPI

3MHz

5ms

-

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

20-TSSOP (0.173", 4.40mm Width)

20-TSSOP

AT29BV040A-25TC

Microchip Technology

IC FLASH 4MBIT 250NS 32TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 4Mb (512K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 20ms
Access Time: 250ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TC)
Mounting Type: Surface Mount
Package / Case: 32-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 32-TSOP

封装: 32-TFSOP (0.724", 18.40mm Width)

库存18,360

FLASH

4Mb (512K x 8)

Parallel

-

20ms

250ns

2.7 V ~ 3.6 V

0°C ~ 70°C (TC)

Surface Mount

32-TFSOP (0.724", 18.40mm Width)

32-TSOP

7140SA55CB

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 55NS SB48

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 55ns
Access Time: 55ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-SIDE BRAZED

封装: 48-DIP (0.600", 15.24mm)

库存6,624

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

55ns

4.5 V ~ 5.5 V

-55°C ~ 125°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-SIDE BRAZED

71V65703S80PFG8

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 8NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,896

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

-

8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

CG8285AA

Cypress Semiconductor Corp

IC MEMORY F-RAM SER 8SOIC

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,520

-

N25Q064A13ESEH0E

Micron Technology Inc.

IC FLASH 64MBIT 108MHZ 8SO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (16M x 4)
Memory Interface: SPI
Clock Frequency: 108MHz
Write Cycle Time - Word, Page: 8ms, 5ms
Access Time: -
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SO W

封装: 8-SOIC (0.209", 5.30mm Width)

库存5,584

FLASH

FLASH - NOR

64Mb (16M x 4)

SPI

108MHz

8ms, 5ms

-

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SO W

71V256SA12YG8

IDT, Integrated Device Technology Inc

IC SRAM 256KBIT 12NS 28SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 12ns
Access Time: 12ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 28-BSOJ (0.300", 7.62mm Width)
Supplier Device Package: 28-SOJ

封装: 28-BSOJ (0.300", 7.62mm Width)

库存7,472

SRAM

SRAM - Asynchronous

256Kb (32K x 8)

Parallel

-

12ns

3 V ~ 3.6 V

0°C ~ 70°C (TA)

Surface Mount

28-BSOJ (0.300", 7.62mm Width)

28-SOJ

DS2502-E64+

Maxim Integrated

IC OTP 1KBIT 1WIRE TO92-3

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 1Kb (1K x 1)
Memory Interface: 1-Wire?
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 15µs
Voltage - Supply: -
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package: TO-92-3

封装: TO-226-3, TO-92-3 (TO-226AA)

库存6,156

EPROM

EPROM - OTP

1Kb (1K x 1)

1-Wire?

-

15µs

-

-40°C ~ 85°C (TA)

Through Hole

TO-226-3, TO-92-3 (TO-226AA)

TO-92-3

CY7C1019D-10VXI

Cypress Semiconductor Corp

IC SRAM 1MBIT 10NS 32SOJ

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mb (128K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-BSOJ (0.400", 10.16mm Width)
Supplier Device Package: 32-SOJ

封装: 32-BSOJ (0.400", 10.16mm Width)

库存9,612

SRAM

SRAM - Asynchronous

1Mb (128K x 8)

Parallel

-

10ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-BSOJ (0.400", 10.16mm Width)

32-SOJ

AT28HC256F-90SU

Microchip Technology

IC EEPROM 256KBIT 90NS 28SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 3ms
Access Time: 90ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 28-SOIC

封装: 28-SOIC (0.295", 7.50mm Width)

库存6,064

EEPROM

256Kb (32K x 8)

Parallel

-

3ms

90ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TC)

Surface Mount

28-SOIC (0.295", 7.50mm Width)

28-SOIC

IS43R16320E-6BL

ISSI, Integrated Silicon Solution Inc

IC DRAM 512M PARALLEL 166MHZ

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Memory Interface: Parallel
Clock Frequency: 166MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Voltage - Supply: 2.3 V ~ 2.7 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 60-TFBGA
Supplier Device Package: 60-TFBGA (13x8)

封装: 60-TFBGA

库存6,128

DRAM

SDRAM - DDR

512Mb (32M x 16)

Parallel

166MHz

15ns

700ps

2.3 V ~ 2.7 V

0°C ~ 70°C (TA)

Surface Mount

60-TFBGA

60-TFBGA (13x8)

S29GL064N11DFIV20

Cypress Semiconductor Corp

IC FLASH 64M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 64Mb (8M x 8, 4M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (9x9)

封装: 64-LBGA

库存4,416

FLASH

FLASH - NOR

64Mb (8M x 8, 4M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (9x9)

AT25PE20-MHN-T

Adesto Technologies

8-UDFN(5X6) IND TEMP1.65V

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 2M (1024 pages x 256 bytes)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 3ms
Access Time: -
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-UDFN Exposed Pad
Supplier Device Package: 8-UDFN (5x6)

封装: 8-UDFN Exposed Pad

库存3,696

FLASH

2M (1024 pages x 256 bytes)

SPI

85MHz

8µs, 3ms

-

1.65 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-UDFN Exposed Pad

8-UDFN (5x6)

MT29F1T08EBLCHD4-QA-C-TR

Micron Technology Inc.

TLC 1T 128GX8 FBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

CY7C235A-25PC

Cypress Semiconductor Corp

IC EPROM 8KBIT PARALLEL

Memory Type: Non-Volatile
Memory Format: EPROM
Technology: EPROM - OTP
Memory Size: 8Kbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 25 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

EPROM

EPROM - OTP

8Kbit

Parallel

-

25 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

-

W74M12JWZPIQ-TR

Winbond Electronics

IC FLASH 128MBIT SPI/QUAD 8WSON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND
Memory Size: 128Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Supplier Device Package: 8-WSON (6x5)

封装: -

Request a Quote

FLASH

FLASH - NAND

128Mbit

SPI - Quad I/O

104 MHz

-

1.7V ~ 1.95V

-40°C ~ 85°C (TA)

Surface Mount

8-WDFN Exposed Pad

8-WSON (6x5)

AT25XE321D-UUN-T

Renesas Electronics Corporation

IC FLASH 32MBIT SPI/QUAD 12WLCSP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: 60µs, 12ms
Access Time: -
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-XFBGA, WLCSP
Supplier Device Package: 12-WLCSP (2.39x1.77)

封装: -

库存26,550

FLASH

FLASH - NOR

32Mbit

SPI - Quad I/O

104 MHz

60µs, 12ms

-

1.65V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

12-XFBGA, WLCSP

12-WLCSP (2.39x1.77)

W77Q32JWSFIN

Winbond Electronics

IC FLASH 32MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

32Mbit

SPI - Quad I/O, QPI

104 MHz

-

1.7V ~ 1.95V

-40°C ~ 85°C

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

S70KS1282GABHB023

Infineon Technologies

IC PSRAM 128MBIT HYPERBUS 24FBGA

Memory Type: Volatile
Memory Format: PSRAM
Technology: PSRAM (Pseudo SRAM)
Memory Size: 128Mbit
Memory Interface: HyperBus
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: 35ns
Access Time: 35 ns
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-VBGA
Supplier Device Package: 24-FBGA (6x8)

封装: -

Request a Quote

PSRAM

PSRAM (Pseudo SRAM)

128Mbit

HyperBus

200 MHz

35ns

35 ns

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

24-VBGA

24-FBGA (6x8)

CY7C1032-10JC

Cypress Semiconductor Corp

IC SRAM 1.152MBIT PAR 52PLCC

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous
Memory Size: 1.152Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 10ns
Access Time: 10 ns
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 52-LCC (J-Lead)
Supplier Device Package: 52-PLCC (19.13x19.13)

封装: -

Request a Quote

SRAM

SRAM - Synchronous

1.152Mbit

Parallel

-

10ns

10 ns

4.5V ~ 5.5V

0°C ~ 70°C (TA)

Surface Mount

52-LCC (J-Lead)

52-PLCC (19.13x19.13)