页 1399 - 存储器 | 集成电路（IC）

零件编号	制造商	描述	封装	库存	Memory Format	Technology	Memory Size	Memory Interface	Clock Frequency	Write Cycle Time - Word, Page	Access Time	Voltage - Supply	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
CY7C1268KV18-400BZC	Cypress Semiconductor Corp	IC SRAM 36MBIT 400MHZ 165FBGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous, DDR II+ Memory Size: 36Mb (2M x 18) Memory Interface: Parallel Clock Frequency: 400MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7 V ~ 1.9 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 165-LBGA Supplier Device Package: 165-FBGA (13x15)	封装: 165-LBGA	库存4,416	SRAM	SRAM - Synchronous, DDR II+	36Mb (2M x 18)	Parallel	400MHz	-	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	Surface Mount	165-LBGA	165-FBGA (13x15)
CAT28C512L12	ON Semiconductor	IC EEPROM 512KBIT 120NS 32DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 512Kb (64K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 5ms Access Time: 120ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 32-DIP (0.600", 15.24mm) Supplier Device Package: 32-PDIP	封装: 32-DIP (0.600", 15.24mm)	库存2,816	EEPROM	EEPROM	512Kb (64K x 8)	Parallel	-	5ms	120ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	32-DIP (0.600", 15.24mm)	32-PDIP
IDT71V65602S150PF	IDT, Integrated Device Technology Inc	IC SRAM 9MBIT 150MHZ 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Synchronous ZBT Memory Size: 9Mb (256K x 36) Memory Interface: Parallel Clock Frequency: 150MHz Write Cycle Time - Word, Page: - Access Time: 3.8ns Voltage - Supply: 3.135 V ~ 3.465 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存2,784	SRAM	SRAM - Synchronous ZBT	9Mb (256K x 36)	Parallel	150MHz	-	3.8ns	3.135 V ~ 3.465 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
STK14C88-NF35ITR	Cypress Semiconductor Corp	IC NVSRAM 256KBIT 35NS 32SOIC Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 32-SOIC (0.295", 7.50mm Width) Supplier Device Package: 32-SOIC	封装: 32-SOIC (0.295", 7.50mm Width)	库存5,616	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	32-SOIC (0.295", 7.50mm Width)	32-SOIC
602-00001	Parallax Inc.	IC EEPROM 16KBIT 400KHZ 8DIP Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 16Kb (2K x 8) Memory Interface: I2C Clock Frequency: 400kHz Write Cycle Time - Word, Page: 5ms Access Time: 900ns Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存4,768	EEPROM	EEPROM	16Kb (2K x 8)	I2C	400kHz	5ms	900ns	2.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	8-DIP (0.300", 7.62mm)	8-DIP
AT25256AW-10SU-1.8	Microchip Technology	IC EEPROM 256KBIT 20MHZ 8SOIC Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 256Kb (32K x 8) Memory Interface: SPI Clock Frequency: 20MHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 1.8 V ~ 5.5 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.209", 5.30mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.209", 5.30mm Width)	库存4,896	EEPROM	EEPROM	256Kb (32K x 8)	SPI	20MHz	5ms	-	1.8 V ~ 5.5 V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.209", 5.30mm Width)	8-SOIC
DS1230AB-70	Maxim Integrated	IC NVSRAM 256KBIT 70NS 28EDIP Memory Type: Non-Volatile Memory Format: NVSRAM Technology: NVSRAM (Non-Volatile SRAM) Memory Size: 256Kb (32K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 70ns Access Time: 70ns Voltage - Supply: 4.75 V ~ 5.25 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 28-DIP Module (0.600", 15.24mm) Supplier Device Package: 28-EDIP	封装: 28-DIP Module (0.600", 15.24mm)	库存4,464	NVSRAM	NVSRAM (Non-Volatile SRAM)	256Kb (32K x 8)	Parallel	-	70ns	70ns	4.75 V ~ 5.25 V	0°C ~ 70°C (TA)	Through Hole	28-DIP Module (0.600", 15.24mm)	28-EDIP
70V3579S4BCG	IDT, Integrated Device Technology Inc	IC SRAM 1.125MBIT 4.2NS 256CABGA Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 1.125Mb (32K x 36) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 4.2ns Voltage - Supply: 3.15 V ~ 3.45 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 256-LBGA Supplier Device Package: 256-CABGA (17x17)	封装: 256-LBGA	库存3,904	SRAM	SRAM - Dual Port, Synchronous	1.125Mb (32K x 36)	Parallel	-	-	4.2ns	3.15 V ~ 3.45 V	0°C ~ 70°C (TA)	Surface Mount	256-LBGA	256-CABGA (17x17)
70V9279L7PRFGI8	IDT, Integrated Device Technology Inc	IC SRAM 512KBIT 7.5NS 128TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Synchronous Memory Size: 512Kb (32K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: 7.5ns Voltage - Supply: 3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 128-LQFP Supplier Device Package: 128-TQFP (14x20)	封装: 128-LQFP	库存6,160	SRAM	SRAM - Dual Port, Synchronous	512Kb (32K x 16)	Parallel	-	-	7.5ns	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	128-LQFP	128-TQFP (14x20)
7024S35PF	IDT, Integrated Device Technology Inc	IC SRAM 64KBIT 35NS 100TQFP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 64Kb (4K x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Surface Mount Package / Case: 100-LQFP Supplier Device Package: 100-TQFP (14x14)	封装: 100-LQFP	库存4,208	SRAM	SRAM - Dual Port, Asynchronous	64Kb (4K x 16)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Surface Mount	100-LQFP	100-TQFP (14x14)
S29GL032N11TFIV20	Cypress Semiconductor Corp	IC FLASH 32MBIT 110NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 32Mb (4M x 8, 2M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 110ns Access Time: 110ns Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封装: 56-TFSOP (0.724", 18.40mm Width)	库存7,456	FLASH	FLASH - NOR	32Mb (4M x 8, 2M x 16)	Parallel	-	110ns	110ns	1.65 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
11LC040T-E/MNY	Microchip Technology	IC EEPROM 4KBIT 100KHZ 8TDFN Memory Type: Non-Volatile Memory Format: EEPROM Technology: EEPROM Memory Size: 4Kb (512 x 8) Memory Interface: Single Wire Clock Frequency: 100kHz Write Cycle Time - Word, Page: 5ms Access Time: - Voltage - Supply: 2.5 V ~ 5.5 V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-WFDFN Exposed Pad Supplier Device Package: 8-TDFN (2x3)	封装: 8-WFDFN Exposed Pad	库存6,784	EEPROM	EEPROM	4Kb (512 x 8)	Single Wire	100kHz	5ms	-	2.5 V ~ 5.5 V	-40°C ~ 125°C (TA)	Surface Mount	8-WFDFN Exposed Pad	8-TDFN (2x3)
S29GL128S10TFI010	Cypress Semiconductor Corp	IC FLASH 128MBIT 100NS 56TSOP Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (8M x 16) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 60ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 56-TFSOP (0.724", 18.40mm Width) Supplier Device Package: 56-TSOP	封装: 56-TFSOP (0.724", 18.40mm Width)	库存5,008	FLASH	FLASH - NOR	128Mb (8M x 16)	Parallel	-	60ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	56-TFSOP (0.724", 18.40mm Width)	56-TSOP
AT45DQ161-SSHF-T	Adesto Technologies	IC FLASH 16MBIT 85MHZ 8SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH Memory Size: 16Mb (528 Bytes x 4096 pages) Memory Interface: SPI Clock Frequency: 85MHz Write Cycle Time - Word, Page: 8µs, 6ms Access Time: - Voltage - Supply: 2.3 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: 8-SOIC (0.154", 3.90mm Width)	库存3,808	FLASH	FLASH	16Mb (528 Bytes x 4096 pages)	SPI	85MHz	8µs, 6ms	-	2.3 V ~ 3.6 V	-40°C ~ 85°C (TC)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
7130LA35PDG	IDT, Integrated Device Technology Inc	IC SRAM 8KBIT 35NS 48DIP Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Dual Port, Asynchronous Memory Size: 8Kb (1K x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 35ns Access Time: 35ns Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: 0°C ~ 70°C (TA) Mounting Type: Through Hole Package / Case: 48-DIP (0.600", 15.24mm) Supplier Device Package: 48-PDIP	封装: 48-DIP (0.600", 15.24mm)	库存6,480	SRAM	SRAM - Dual Port, Asynchronous	8Kb (1K x 8)	Parallel	-	35ns	35ns	4.5 V ~ 5.5 V	0°C ~ 70°C (TA)	Through Hole	48-DIP (0.600", 15.24mm)	48-PDIP
MT53B768M64D8NK-053 WT:D	Micron Technology Inc.	IC DRAM 48G 1866MHZ FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR4 Memory Size: 48Gb (768M x 64) Memory Interface: - Clock Frequency: 1866MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.1V Operating Temperature: -30°C ~ 85°C (TC) Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,984	DRAM	SDRAM - Mobile LPDDR4	48Gb (768M x 64)	-	1866MHz	-	-	1.1V	-30°C ~ 85°C (TC)	-	-	-
S29GL128P10FAI022	Cypress Semiconductor Corp	IC FLASH 128M PARALLEL 64BGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 128Mb (16M x 8) Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 100ns Access Time: 100ns Voltage - Supply: 2.7 V ~ 3.6 V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 64-LBGA Supplier Device Package: 64-FBGA (13x11)	封装: 64-LBGA	库存3,168	FLASH	FLASH - NOR	128Mb (16M x 8)	Parallel	-	100ns	100ns	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	Surface Mount	64-LBGA	64-FBGA (13x11)
QMP29XL12DF70PFV-LCYE1	Cypress Semiconductor Corp	IC MEMORY NOR Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,584	-	-	-	-	-	-	-	-	-	-	-	-
IS21TF16G-JCLI-TR	ISSI, Integrated Silicon Solution Inc	IC FLASH 128GBIT EMMC 153VFBGA Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NAND (TLC) Memory Size: 128Gbit Memory Interface: eMMC_5.1 Clock Frequency: 200 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 153-VFBGA Supplier Device Package: 153-VFBGA (11.5x13)	封装: -	Request a Quote	FLASH	FLASH - NAND (TLC)	128Gbit	eMMC_5.1	200 MHz	-	-	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	153-VFBGA	153-VFBGA (11.5x13)
7009S15PF	Renesas Electronics Corporation	IC RAM Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
IS49NLC93200A-18WBL	ISSI, Integrated Silicon Solution Inc	RLDRAM2 Memory, 288Mbit, x9, Com Memory Type: Volatile Memory Format: DRAM Technology: RLDRAM 2 Memory Size: 288Mbit Memory Interface: HSTL Clock Frequency: 533 MHz Write Cycle Time - Word, Page: - Access Time: 15 ns Voltage - Supply: 1.7V ~ 1.9V Operating Temperature: 0°C ~ 95°C (TC) Mounting Type: Surface Mount Package / Case: 144-TFBGA Supplier Device Package: 144-TWBGA (11x18.5)	封装: -	Request a Quote	DRAM	RLDRAM 2	288Mbit	HSTL	533 MHz	-	15 ns	1.7V ~ 1.9V	0°C ~ 95°C (TC)	Surface Mount	144-TFBGA	144-TWBGA (11x18.5)
MB85RS1MTPNF-G-AWE2	Fujitsu Semiconductor Memory Solution	1MBIT FRAM WITH SPI SERIAL INTER Memory Type: Non-Volatile Memory Format: FRAM Technology: FRAM (Ferroelectric RAM) Memory Size: 1Mbit Memory Interface: SPI Clock Frequency: 40 MHz Write Cycle Time - Word, Page: - Access Time: 9 ns Voltage - Supply: 1.8V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	FRAM	FRAM (Ferroelectric RAM)	1Mbit	SPI	40 MHz	-	9 ns	1.8V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
S25HS512TDPMHB010	Infineon Technologies	IC FLASH 512MBIT SPI/QUAD 16SOIC Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 512Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.7V ~ 2V Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Supplier Device Package: 16-SOIC	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	512Mbit	SPI - Quad I/O, QPI	133 MHz	-	-	1.7V ~ 2V	-40°C ~ 105°C (TA)	Surface Mount	16-SOIC (0.295", 7.50mm Width)	16-SOIC
MT62F768M64D4EK-026-WT-ES-B-TR	Micron Technology Inc.	LPDDR5 48G 768MX64 FBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR5 Memory Size: 48Gbit Memory Interface: Parallel Clock Frequency: 3.2 GHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: -25°C ~ 85°C Mounting Type: Surface Mount Package / Case: 441-TFBGA Supplier Device Package: 441-TFBGA (14x14)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR5	48Gbit	Parallel	3.2 GHz	-	-	-	-25°C ~ 85°C	Surface Mount	441-TFBGA	441-TFBGA (14x14)
W25Q32JVUUIM-TR	Winbond Electronics	SPIFLASH, 3V, 32M-BIT, 4KB UNIFO Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR (SLC) Memory Size: 32Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 133 MHz Write Cycle Time - Word, Page: 3ms Access Time: 6 ns Voltage - Supply: 2.7V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (4x3)	封装: -	Request a Quote	FLASH	FLASH - NOR (SLC)	32Mbit	SPI - Quad I/O, QPI	133 MHz	3ms	6 ns	2.7V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (4x3)
EM016LXQADG13IS1T	Everspin Technologies Inc.	IC RAM 16MBIT XSPI/QUAD 8DFN Memory Type: Non-Volatile Memory Format: RAM Technology: MRAM (Magnetoresistive RAM) Memory Size: 16Mbit Memory Interface: xSPI - Quad I/O Clock Frequency: 133 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 2V Operating Temperature: -40°C ~ 85°C Mounting Type: Surface Mount Package / Case: 8-VDFN Exposed Pad Supplier Device Package: 8-DFN (6x8)	封装: -	库存1,575	RAM	MRAM (Magnetoresistive RAM)	16Mbit	xSPI - Quad I/O	133 MHz	-	-	1.65V ~ 2V	-40°C ~ 85°C	Surface Mount	8-VDFN Exposed Pad	8-DFN (6x8)
CY7C1021BV33L-15ZXI	Cypress Semiconductor Corp	IC SRAM 1MBIT PARALLEL 44TSOP II Memory Type: Volatile Memory Format: SRAM Technology: SRAM - Asynchronous Memory Size: 1Mbit Memory Interface: Parallel Clock Frequency: - Write Cycle Time - Word, Page: 15ns Access Time: 15 ns Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 44-TSOP (0.400", 10.16mm Width) Supplier Device Package: 44-TSOP II	封装: -	Request a Quote	SRAM	SRAM - Asynchronous	1Mbit	Parallel	-	15ns	15 ns	3V ~ 3.6V	-40°C ~ 85°C (TA)	Surface Mount	44-TSOP (0.400", 10.16mm Width)	44-TSOP II
IS43LD32128B-18BPLI	ISSI, Integrated Silicon Solution Inc	IC DRAM 4GBIT HSUL 12 168VFBGA Memory Type: Volatile Memory Format: DRAM Technology: SDRAM - Mobile LPDDR2-S4 Memory Size: 4Gbit Memory Interface: HSUL_12 Clock Frequency: 533 MHz Write Cycle Time - Word, Page: 15ns Access Time: 5.5 ns Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V Operating Temperature: -40°C ~ 85°C (TC) Mounting Type: Surface Mount Package / Case: 168-VFBGA Supplier Device Package: 168-VFBGA (12x12)	封装: -	Request a Quote	DRAM	SDRAM - Mobile LPDDR2-S4	4Gbit	HSUL_12	533 MHz	15ns	5.5 ns	1.14V ~ 1.3V, 1.7V ~ 1.95V	-40°C ~ 85°C (TC)	Surface Mount	168-VFBGA	168-VFBGA (12x12)
MT29F4T08EULGEM4-ITF-G-TR	Micron Technology Inc.	TLC 4T X8 LBGA Memory Type: - Memory Format: - Technology: - Memory Size: - Memory Interface: - Clock Frequency: - Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-	-
W25Q40EWUXSE	Winbond Electronics	IC FLASH 4MBIT SPI/QUAD 8USON Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mbit Memory Interface: SPI - Quad I/O, QPI Clock Frequency: 104 MHz Write Cycle Time - Word, Page: - Access Time: - Voltage - Supply: 1.65V ~ 1.95V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-UFDFN Exposed Pad Supplier Device Package: 8-USON (2x3)	封装: -	Request a Quote	FLASH	FLASH - NOR	4Mbit	SPI - Quad I/O, QPI	104 MHz	-	-	1.65V ~ 1.95V	-40°C ~ 125°C (TA)	Surface Mount	8-UFDFN Exposed Pad	8-USON (2x3)

CY7C1268KV18-400BZC

Cypress Semiconductor Corp

IC SRAM 36MBIT 400MHZ 165FBGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous, DDR II+
Memory Size: 36Mb (2M x 18)
Memory Interface: Parallel
Clock Frequency: 400MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7 V ~ 1.9 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 165-LBGA
Supplier Device Package: 165-FBGA (13x15)

封装: 165-LBGA

库存4,416

SRAM

SRAM - Synchronous, DDR II+

36Mb (2M x 18)

Parallel

400MHz

-

1.7 V ~ 1.9 V

0°C ~ 70°C (TA)

Surface Mount

165-LBGA

165-FBGA (13x15)

CAT28C512L12

ON Semiconductor

IC EEPROM 512KBIT 120NS 32DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 512Kb (64K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 5ms
Access Time: 120ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 32-DIP (0.600", 15.24mm)
Supplier Device Package: 32-PDIP

封装: 32-DIP (0.600", 15.24mm)

库存2,816

EEPROM

512Kb (64K x 8)

Parallel

-

5ms

120ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

32-DIP (0.600", 15.24mm)

32-PDIP

IDT71V65602S150PF

IDT, Integrated Device Technology Inc

IC SRAM 9MBIT 150MHZ 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Synchronous ZBT
Memory Size: 9Mb (256K x 36)
Memory Interface: Parallel
Clock Frequency: 150MHz
Write Cycle Time - Word, Page: -
Access Time: 3.8ns
Voltage - Supply: 3.135 V ~ 3.465 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存2,784

SRAM

SRAM - Synchronous ZBT

9Mb (256K x 36)

Parallel

150MHz

-

3.8ns

3.135 V ~ 3.465 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

STK14C88-NF35ITR

Cypress Semiconductor Corp

IC NVSRAM 256KBIT 35NS 32SOIC

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 32-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 32-SOIC

封装: 32-SOIC (0.295", 7.50mm Width)

库存5,616

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

32-SOIC (0.295", 7.50mm Width)

32-SOIC

602-00001

Parallax Inc.

IC EEPROM 16KBIT 400KHZ 8DIP

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 16Kb (2K x 8)
Memory Interface: I2C
Clock Frequency: 400kHz
Write Cycle Time - Word, Page: 5ms
Access Time: 900ns
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存4,768

EEPROM

16Kb (2K x 8)

I2C

400kHz

5ms

900ns

2.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

8-DIP (0.300", 7.62mm)

8-DIP

AT25256AW-10SU-1.8

Microchip Technology

IC EEPROM 256KBIT 20MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 256Kb (32K x 8)
Memory Interface: SPI
Clock Frequency: 20MHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 1.8 V ~ 5.5 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.209", 5.30mm Width)

库存4,896

EEPROM

256Kb (32K x 8)

SPI

20MHz

5ms

-

1.8 V ~ 5.5 V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.209", 5.30mm Width)

8-SOIC

DS1230AB-70

Maxim Integrated

IC NVSRAM 256KBIT 70NS 28EDIP

Memory Type: Non-Volatile
Memory Format: NVSRAM
Technology: NVSRAM (Non-Volatile SRAM)
Memory Size: 256Kb (32K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 70ns
Access Time: 70ns
Voltage - Supply: 4.75 V ~ 5.25 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 28-DIP Module (0.600", 15.24mm)
Supplier Device Package: 28-EDIP

封装: 28-DIP Module (0.600", 15.24mm)

库存4,464

NVSRAM

NVSRAM (Non-Volatile SRAM)

256Kb (32K x 8)

Parallel

-

70ns

4.75 V ~ 5.25 V

0°C ~ 70°C (TA)

Through Hole

28-DIP Module (0.600", 15.24mm)

28-EDIP

70V3579S4BCG

IDT, Integrated Device Technology Inc

IC SRAM 1.125MBIT 4.2NS 256CABGA

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 1.125Mb (32K x 36)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 4.2ns
Voltage - Supply: 3.15 V ~ 3.45 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Supplier Device Package: 256-CABGA (17x17)

封装: 256-LBGA

库存3,904

SRAM

SRAM - Dual Port, Synchronous

1.125Mb (32K x 36)

Parallel

-

4.2ns

3.15 V ~ 3.45 V

0°C ~ 70°C (TA)

Surface Mount

256-LBGA

256-CABGA (17x17)

70V9279L7PRFGI8

IDT, Integrated Device Technology Inc

IC SRAM 512KBIT 7.5NS 128TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Synchronous
Memory Size: 512Kb (32K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: 7.5ns
Voltage - Supply: 3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 128-LQFP
Supplier Device Package: 128-TQFP (14x20)

封装: 128-LQFP

库存6,160

SRAM

SRAM - Dual Port, Synchronous

512Kb (32K x 16)

Parallel

-

7.5ns

3 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

128-LQFP

128-TQFP (14x20)

7024S35PF

IDT, Integrated Device Technology Inc

IC SRAM 64KBIT 35NS 100TQFP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 64Kb (4K x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Supplier Device Package: 100-TQFP (14x14)

封装: 100-LQFP

库存4,208

SRAM

SRAM - Dual Port, Asynchronous

64Kb (4K x 16)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Surface Mount

100-LQFP

100-TQFP (14x14)

S29GL032N11TFIV20

Cypress Semiconductor Corp

IC FLASH 32MBIT 110NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 32Mb (4M x 8, 2M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 110ns
Access Time: 110ns
Voltage - Supply: 1.65 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封装: 56-TFSOP (0.724", 18.40mm Width)

库存7,456

FLASH

FLASH - NOR

32Mb (4M x 8, 2M x 16)

Parallel

-

110ns

1.65 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

11LC040T-E/MNY

Microchip Technology

IC EEPROM 4KBIT 100KHZ 8TDFN

Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Memory Interface: Single Wire
Clock Frequency: 100kHz
Write Cycle Time - Word, Page: 5ms
Access Time: -
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-WFDFN Exposed Pad
Supplier Device Package: 8-TDFN (2x3)

封装: 8-WFDFN Exposed Pad

库存6,784

EEPROM

4Kb (512 x 8)

Single Wire

100kHz

5ms

-

2.5 V ~ 5.5 V

-40°C ~ 125°C (TA)

Surface Mount

8-WFDFN Exposed Pad

8-TDFN (2x3)

S29GL128S10TFI010

Cypress Semiconductor Corp

IC FLASH 128MBIT 100NS 56TSOP

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (8M x 16)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 60ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Supplier Device Package: 56-TSOP

封装: 56-TFSOP (0.724", 18.40mm Width)

库存5,008

FLASH

FLASH - NOR

128Mb (8M x 16)

Parallel

-

60ns

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

56-TFSOP (0.724", 18.40mm Width)

56-TSOP

AT45DQ161-SSHF-T

Adesto Technologies

IC FLASH 16MBIT 85MHZ 8SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH
Memory Size: 16Mb (528 Bytes x 4096 pages)
Memory Interface: SPI
Clock Frequency: 85MHz
Write Cycle Time - Word, Page: 8µs, 6ms
Access Time: -
Voltage - Supply: 2.3 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: 8-SOIC (0.154", 3.90mm Width)

库存3,808

FLASH

16Mb (528 Bytes x 4096 pages)

SPI

85MHz

8µs, 6ms

-

2.3 V ~ 3.6 V

-40°C ~ 85°C (TC)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

7130LA35PDG

IDT, Integrated Device Technology Inc

IC SRAM 8KBIT 35NS 48DIP

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Dual Port, Asynchronous
Memory Size: 8Kb (1K x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 35ns
Access Time: 35ns
Voltage - Supply: 4.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Through Hole
Package / Case: 48-DIP (0.600", 15.24mm)
Supplier Device Package: 48-PDIP

封装: 48-DIP (0.600", 15.24mm)

库存6,480

SRAM

SRAM - Dual Port, Asynchronous

8Kb (1K x 8)

Parallel

-

35ns

4.5 V ~ 5.5 V

0°C ~ 70°C (TA)

Through Hole

48-DIP (0.600", 15.24mm)

48-PDIP

MT53B768M64D8NK-053 WT:D

Micron Technology Inc.

IC DRAM 48G 1866MHZ FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR4
Memory Size: 48Gb (768M x 64)
Memory Interface: -
Clock Frequency: 1866MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.1V
Operating Temperature: -30°C ~ 85°C (TC)
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,984

DRAM

SDRAM - Mobile LPDDR4

48Gb (768M x 64)

-

1866MHz

-

1.1V

-30°C ~ 85°C (TC)

-

S29GL128P10FAI022

Cypress Semiconductor Corp

IC FLASH 128M PARALLEL 64BGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 100ns
Access Time: 100ns
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-FBGA (13x11)

封装: 64-LBGA

库存3,168

FLASH

FLASH - NOR

128Mb (16M x 8)

Parallel

-

100ns

2.7 V ~ 3.6 V

-40°C ~ 85°C (TA)

Surface Mount

64-LBGA

64-FBGA (13x11)

QMP29XL12DF70PFV-LCYE1

Cypress Semiconductor Corp

IC MEMORY NOR

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,584

-

IS21TF16G-JCLI-TR

ISSI, Integrated Silicon Solution Inc

IC FLASH 128GBIT EMMC 153VFBGA

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NAND (TLC)
Memory Size: 128Gbit
Memory Interface: eMMC_5.1
Clock Frequency: 200 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 153-VFBGA
Supplier Device Package: 153-VFBGA (11.5x13)

封装: -

Request a Quote

FLASH

FLASH - NAND (TLC)

128Gbit

eMMC_5.1

200 MHz

-

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

153-VFBGA

153-VFBGA (11.5x13)

7009S15PF

Renesas Electronics Corporation

IC RAM

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

IS49NLC93200A-18WBL

ISSI, Integrated Silicon Solution Inc

RLDRAM2 Memory, 288Mbit, x9, Com

Memory Type: Volatile
Memory Format: DRAM
Technology: RLDRAM 2
Memory Size: 288Mbit
Memory Interface: HSTL
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: -
Access Time: 15 ns
Voltage - Supply: 1.7V ~ 1.9V
Operating Temperature: 0°C ~ 95°C (TC)
Mounting Type: Surface Mount
Package / Case: 144-TFBGA
Supplier Device Package: 144-TWBGA (11x18.5)

封装: -

Request a Quote

DRAM

RLDRAM 2

288Mbit

HSTL

533 MHz

-

15 ns

1.7V ~ 1.9V

0°C ~ 95°C (TC)

Surface Mount

144-TFBGA

144-TWBGA (11x18.5)

MB85RS1MTPNF-G-AWE2

Fujitsu Semiconductor Memory Solution

1MBIT FRAM WITH SPI SERIAL INTER

Memory Type: Non-Volatile
Memory Format: FRAM
Technology: FRAM (Ferroelectric RAM)
Memory Size: 1Mbit
Memory Interface: SPI
Clock Frequency: 40 MHz
Write Cycle Time - Word, Page: -
Access Time: 9 ns
Voltage - Supply: 1.8V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

Request a Quote

FRAM

FRAM (Ferroelectric RAM)

1Mbit

SPI

40 MHz

-

9 ns

1.8V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

S25HS512TDPMHB010

Infineon Technologies

IC FLASH 512MBIT SPI/QUAD 16SOIC

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 512Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.7V ~ 2V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Supplier Device Package: 16-SOIC

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

512Mbit

SPI - Quad I/O, QPI

133 MHz

-

1.7V ~ 2V

-40°C ~ 105°C (TA)

Surface Mount

16-SOIC (0.295", 7.50mm Width)

16-SOIC

MT62F768M64D4EK-026-WT-ES-B-TR

Micron Technology Inc.

LPDDR5 48G 768MX64 FBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR5
Memory Size: 48Gbit
Memory Interface: Parallel
Clock Frequency: 3.2 GHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 441-TFBGA
Supplier Device Package: 441-TFBGA (14x14)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR5

48Gbit

Parallel

3.2 GHz

-

-25°C ~ 85°C

Surface Mount

441-TFBGA

441-TFBGA (14x14)

W25Q32JVUUIM-TR

Winbond Electronics

SPIFLASH, 3V, 32M-BIT, 4KB UNIFO

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR (SLC)
Memory Size: 32Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: 3ms
Access Time: 6 ns
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (4x3)

封装: -

Request a Quote

FLASH

FLASH - NOR (SLC)

32Mbit

SPI - Quad I/O, QPI

133 MHz

3ms

6 ns

2.7V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (4x3)

EM016LXQADG13IS1T

Everspin Technologies Inc.

IC RAM 16MBIT XSPI/QUAD 8DFN

Memory Type: Non-Volatile
Memory Format: RAM
Technology: MRAM (Magnetoresistive RAM)
Memory Size: 16Mbit
Memory Interface: xSPI - Quad I/O
Clock Frequency: 133 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 2V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Supplier Device Package: 8-DFN (6x8)

封装: -

库存1,575

RAM

MRAM (Magnetoresistive RAM)

16Mbit

xSPI - Quad I/O

133 MHz

-

1.65V ~ 2V

-40°C ~ 85°C

Surface Mount

8-VDFN Exposed Pad

8-DFN (6x8)

CY7C1021BV33L-15ZXI

Cypress Semiconductor Corp

IC SRAM 1MBIT PARALLEL 44TSOP II

Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 1Mbit
Memory Interface: Parallel
Clock Frequency: -
Write Cycle Time - Word, Page: 15ns
Access Time: 15 ns
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II

封装: -

Request a Quote

SRAM

SRAM - Asynchronous

1Mbit

Parallel

-

15ns

15 ns

3V ~ 3.6V

-40°C ~ 85°C (TA)

Surface Mount

44-TSOP (0.400", 10.16mm Width)

44-TSOP II

IS43LD32128B-18BPLI

ISSI, Integrated Silicon Solution Inc

IC DRAM 4GBIT HSUL 12 168VFBGA

Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - Mobile LPDDR2-S4
Memory Size: 4Gbit
Memory Interface: HSUL_12
Clock Frequency: 533 MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 5.5 ns
Voltage - Supply: 1.14V ~ 1.3V, 1.7V ~ 1.95V
Operating Temperature: -40°C ~ 85°C (TC)
Mounting Type: Surface Mount
Package / Case: 168-VFBGA
Supplier Device Package: 168-VFBGA (12x12)

封装: -

Request a Quote

DRAM

SDRAM - Mobile LPDDR2-S4

4Gbit

HSUL_12

533 MHz

15ns

5.5 ns

1.14V ~ 1.3V, 1.7V ~ 1.95V

-40°C ~ 85°C (TC)

Surface Mount

168-VFBGA

168-VFBGA (12x12)

MT29F4T08EULGEM4-ITF-G-TR

Micron Technology Inc.

TLC 4T X8 LBGA

Memory Type: -
Memory Format: -
Technology: -
Memory Size: -
Memory Interface: -
Clock Frequency: -
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

Request a Quote

-

W25Q40EWUXSE

Winbond Electronics

IC FLASH 4MBIT SPI/QUAD 8USON

Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 4Mbit
Memory Interface: SPI - Quad I/O, QPI
Clock Frequency: 104 MHz
Write Cycle Time - Word, Page: -
Access Time: -
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Supplier Device Package: 8-USON (2x3)

封装: -

Request a Quote

FLASH

FLASH - NOR

4Mbit

SPI - Quad I/O, QPI

104 MHz

-

1.65V ~ 1.95V

-40°C ~ 125°C (TA)

Surface Mount

8-UFDFN Exposed Pad

8-USON (2x3)