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Infineon Technologies |
IGBT 600V 80A 303W TO247-3
- IGBT Type: Trench Field Stop
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 80A
- Current - Collector Pulsed (Icm): 120A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 40A
- Power - Max: 303W
- Switching Energy: 920µJ
- Input Type: Standard
- Gate Charge: 215nC
- Td (on/off) @ 25°C: -/186ns
- Test Condition: 400V, 40A, 5.6 Ohm, 15V
- Reverse Recovery Time (trr): 143ns
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: PG-TO247-3
|
封装: TO-247-3 |
库存3,856 |
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Infineon Technologies |
IGBT 650V 90A 300W TO-247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 650V
- Current - Collector (Ic) (Max): 90A
- Current - Collector Pulsed (Icm): 192A
- Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 48A
- Power - Max: 300W
- Switching Energy: 1.7mJ (on), 1mJ (off)
- Input Type: Standard
- Gate Charge: 150nC
- Td (on/off) @ 25°C: 70ns/140ns
- Test Condition: 400V, 48A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -40°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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封装: TO-247-3 |
库存5,808 |
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Infineon Technologies |
IGBT 600V 6.3A 35W DPAK
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 6.3A
- Current - Collector Pulsed (Icm): 8A
- Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 2A
- Power - Max: 35W
- Switching Energy: 74µJ (on), 39µJ (off)
- Input Type: Standard
- Gate Charge: 12nC
- Td (on/off) @ 25°C: 11ns/150ns
- Test Condition: 400V, 2A, 100 Ohm, 15V
- Reverse Recovery Time (trr): 68ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: D-Pak
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存14,808 |
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Infineon Technologies |
MOD IGBT 1200V 150A POWIR 62
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 300A
- Power - Max: 910W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 150A
- Current - Collector Cutoff (Max): 2mA
- Input Capacitance (Cies) @ Vce: 20.2nF @ 25V
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: POWIR? 62 Module
- Supplier Device Package: POWIR? 62
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封装: POWIR? 62 Module |
库存7,632 |
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Infineon Technologies |
MOSFET N-CH TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 60µA
- Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8180pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 107W (Tc)
- Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 40A, 4.5V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO220-3-1
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存3,776 |
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Infineon Technologies |
MOSFET N-CH 55V 19A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 14µA
- Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 354pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 47W (Tc)
- Rds On (Max) @ Id, Vgs: 64 mOhm @ 13A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存7,568 |
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Infineon Technologies |
MOSFET N-CH 100V 100A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 210nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13800pF @ 50V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 4.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存5,936 |
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Infineon Technologies |
MOSFET N-CH 55V 85A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 120nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3210pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 43A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,440 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1420pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 80W (Tc)
- Rds On (Max) @ Id, Vgs: 13.9 mOhm @ 31A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存7,872 |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 130nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 7980pF @ 15V
- Vgs (Max): ±12V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 15A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,552 |
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 100nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 5330pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 200W (Tc)
- Rds On (Max) @ Id, Vgs: 6.5 mOhm @ 78A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存48,000 |
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Infineon Technologies |
DIFFERENTIATED MOSFETS
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
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封装: - |
库存6,800 |
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Infineon Technologies |
HIGH POWER_LEGACY
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
库存4,080 |
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Infineon Technologies |
MOSFET N-CH 60V 50A DPAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 49nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3779pF @ 50V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 143W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D-Pak
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,880 |
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Infineon Technologies |
MOSFET N-CH 60V 29A TO220-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 2.8V @ 143µA
- Gate Charge (Qg) (Max) @ Vgs: 106nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7800pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 214W (Tc)
- Rds On (Max) @ Id, Vgs: 2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO-220-3
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存6,848 |
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Infineon Technologies |
MOSFET N-CH 900V 5.1A TO-252
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 5.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 310µA
- Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 710pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 2.8A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存25,314 |
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Infineon Technologies |
MOSFET 2P-CH 12V 9.2A 8-SOIC
- FET Type: 2 P-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 12V
- Current - Continuous Drain (Id) @ 25°C: 9.2A
- Rds On (Max) @ Id, Vgs: 17 mOhm @ 9.2A, 4.5V
- Vgs(th) (Max) @ Id: 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 57nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 3450pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存29,730 |
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Infineon Technologies |
TRANS NPN 45V 0.5A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 500mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
- Power - Max: 250mW
- Frequency - Transition: 170MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封装: SC-70, SOT-323 |
库存4,496 |
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Infineon Technologies |
TRANS NPN 300V 0.2A SOT-23
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 200mA
- Voltage - Collector Emitter Breakdown (Max): 300V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 30mA, 10V
- Power - Max: 360mW
- Frequency - Transition: 70MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3
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封装: TO-236-3, SC-59, SOT-23-3 |
库存29,490 |
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Infineon Technologies |
IC HYBRID 3PH INV 2A 500V SIP-S
- Type: MOSFET
- Configuration: 3 Phase
- Current: 2A
- Voltage: 500V
- Voltage - Isolation: -
- Package / Case: 19-PowerSSIP Module, Formed Leads
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封装: 19-PowerSSIP Module, Formed Leads |
库存5,088 |
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Infineon Technologies |
DIODE SCHOTTKY 1.2KV 56A TO220-2
- Diode Type: Silicon Carbide Schottky
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 56A (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.8V @ 20A
- Speed: No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr): 0ns
- Current - Reverse Leakage @ Vr: 123µA @ 1200V
- Capacitance @ Vr, F: 1050pF @ 1V, 1MHz
- Mounting Type: Through Hole
- Package / Case: TO-220-2
- Supplier Device Package: PG-TO220-2-1
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-220-2 |
库存16,368 |
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Infineon Technologies |
IC MOTOR CONTRLLR I2C/SPI 100QFP
- Motor Type - Stepper: -
- Motor Type - AC, DC: AC, Synchronous
- Function: Controller - Commutation, Direction Management
- Output Configuration: Pre-Driver - Half Bridge (6)
- Interface: I2C, RS-232, SPI
- Technology: Power MOSFET, IGBT
- Step Resolution: -
- Applications: Appliance
- Current - Output: -
- Voltage - Supply: 1.62 V ~ 1.98 V, 3 V ~ 3.6 V
- Voltage - Load: -
- Operating Temperature: -40°C ~ 85°C (TA)
- Mounting Type: Surface Mount
- Package / Case: 100-LQFP
- Supplier Device Package: 100-QFP (14x14)
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封装: 100-LQFP |
库存14,700 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE SGL 24SSOP
- Driven Configuration: Half-Bridge
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT
- Voltage - Supply: 11.5 V ~ 20 V
- Logic Voltage - VIL, VIH: 0.8V, 2V
- Current - Peak Output (Source, Sink): 2A, 3A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 24ns, 7ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 24-SSOP (0.209", 5.30mm Width)
- Supplier Device Package: 24-SSOP
|
封装: 24-SSOP (0.209", 5.30mm Width) |
库存4,448 |
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Infineon Technologies |
IC DRIVER HALF BRIDGE OSC 8SOIC
- Driven Configuration: Half-Bridge
- Channel Type: Synchronous
- Number of Drivers: 2
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 10 V ~ 15.6 V
- Logic Voltage - VIL, VIH: -
- Current - Peak Output (Source, Sink): -
- Input Type: RC Input Circuit
- High Side Voltage - Max (Bootstrap): 600V
- Rise / Fall Time (Typ): 80ns, 45ns
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存704,976 |
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Infineon Technologies |
IC DRIVER DUAL HS MOSFET PDSO-14
- Output Configuration: Half Bridge (2)
- Applications: DC-DC Converters, Voltage Regulators
- Interface: PWM
- Load Type: Inductive
- Technology: Power MOSFET
- Rds On (Typ): 1.9 Ohm LS, 1.75 Ohm HS
- Current - Output / Channel: -
- Current - Peak Output: -
- Voltage - Supply: 10.8 V ~ 13.2 V
- Voltage - Load: 6 V ~ 13.2 V
- Operating Temperature: 0°C ~ 125°C (TJ)
- Features: Bootstrap Circuit
- Fault Protection: Shoot-Through, Over Voltage
- Mounting Type: Surface Mount
- Package / Case: 14-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-14
|
封装: 14-SOIC (0.154", 3.90mm Width) |
库存7,956 |
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Infineon Technologies |
IC MCU 16BIT 320KB FLASH 64LQFP
- Core Processor: C166SV2
- Core Size: 16/32-Bit
- Speed: 80MHz
- Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
- Peripherals: I2S, POR, PWM, WDT
- Number of I/O: 38
- Program Memory Size: 320KB (320K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 34K x 8
- Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
- Data Converters: A/D 9x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP Exposed Pad
- Supplier Device Package: PG-LQFP-64-6
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封装: 64-LQFP Exposed Pad |
库存2,768 |
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Infineon Technologies |
IC RCVR ASK/FSK MULTI QD 28TSSOP
- Frequency: 300MHz ~ 320MHz, 425MHz ~ 450MHz, 863MHz ~ 870MHz, 902MHz ~ 928MHz
- Sensitivity: -118dBm
- Data Rate (Max): 112 kcps
- Modulation or Protocol: ASK, FSK
- Applications: RKE, Telemetering, Security Technology
- Current - Receiving: -
- Data Interface: PCB, Surface Mount
- Memory Size: -
- Antenna Connector: PCB, Surface Mount
- Features: RSSI Equipped
- Voltage - Supply: 3 V ~ 3.6 V, 4.5 V ~ 5.5 V
- Operating Temperature: -40°C ~ 105°C
- Package / Case: 28-TSSOP (0.173", 4.40mm Width)
- Supplier Device Package: PG-TSSOP-28
|
封装: 28-TSSOP (0.173", 4.40mm Width) |
库存4,878 |
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Infineon Technologies |
OPTOISO 2.5KV 2CH PHVOLT 8-SMT
- Number of Channels: 2
- Voltage - Isolation: 2500Vrms
- Current Transfer Ratio (Min): -
- Current Transfer Ratio (Max): -
- Turn On / Turn Off Time (Typ): 300µs, 220µs (Max)
- Rise / Fall Time (Typ): -
- Input Type: DC
- Output Type: Photovoltaic
- Voltage - Output (Max): 5V
- Current - Output / Channel: 5µA
- Voltage - Forward (Vf) (Typ): -
- Current - DC Forward (If) (Max): -
- Vce Saturation (Max): -
- Operating Temperature: -40°C ~ 85°C
- Mounting Type: Surface Mount
- Package / Case: 8-SMD (4 Leads), Gull Wing
- Supplier Device Package: 8-SMD
|
封装: 8-SMD (4 Leads), Gull Wing |
库存5,148 |
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Infineon Technologies |
IC SW 1CH 60V HISIDE 8POWERSOIC
- Switch Type: General Purpose
- Number of Outputs: 1
- Ratio - Input:Output: 1:1
- Output Configuration: High Side
- Output Type: N-Channel
- Interface: On/Off
- Voltage - Load: 6 V ~ 52 V
- Voltage - Supply (Vcc/Vdd): Not Required
- Current - Output (Max): 1.3A
- Rds On (Typ): 150 mOhm
- Input Type: Non-Inverting
- Features: -
- Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: P-DSO-8
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存655,272 |
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Infineon Technologies |
32 BIT AURIX
- Core Processor: TriCore™
- Core Size: 32-Bit
- Speed: 200MHz
- Connectivity: CANbus, FlexRay, LINbus, QSPI
- Peripherals: DMA, WDT
- Number of I/O: 78
- Program Memory Size: 2MB (2M x 8)
- Program Memory Type: FLASH
- EEPROM Size: 128K x 8
- RAM Size: 192K x 8
- Voltage - Supply (Vcc/Vdd): 1.17 V ~ 1.43 V, 2.97 V ~ 5.5 V
- Data Converters: A/D 24x12b
- Oscillator Type: External
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: -
- Package / Case: 292-LFBGA
- Supplier Device Package: PG-LFBGA-292-6
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封装: 292-LFBGA |
库存19,452 |
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