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Infineon Technologies |
IGBT 600V 34A 100W D2PAK
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 34A
- Current - Collector Pulsed (Icm): 68A
- Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
- Power - Max: 100W
- Switching Energy: 260µJ (on), 3.45mJ (off)
- Input Type: Standard
- Gate Charge: 50nC
- Td (on/off) @ 25°C: 22ns/540ns
- Test Condition: 480V, 18A, 23 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存112,128 |
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Infineon Technologies |
IGBT 600V 65A 250W TO247AC
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 65A
- Current - Collector Pulsed (Icm): 72A
- Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
- Power - Max: 250W
- Switching Energy: 115µJ (on), 600µJ (off)
- Input Type: Standard
- Gate Charge: 75nC
- Td (on/off) @ 25°C: 41ns/104ns
- Test Condition: 400V, 24A, 10 Ohm, 15V
- Reverse Recovery Time (trr): 89ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AC
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封装: TO-247-3 |
库存14,496 |
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Infineon Technologies |
IGBT 600V 240A 750W TO-274
- IGBT Type: Trench
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 240A
- Current - Collector Pulsed (Icm): 360A
- Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
- Power - Max: 750W
- Switching Energy: 8.2mJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 360nC
- Td (on/off) @ 25°C: 69ns/198ns
- Test Condition: 400V, 120A, 4.7 Ohm, 15V
- Reverse Recovery Time (trr): 360ns
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: SUPER-247 (TO-274AA)
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封装: TO-247-3 |
库存8,724 |
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Infineon Technologies |
MOSFET N-CH 650V 15A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.9V @ 675µA
- Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 156W (Tc)
- Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,568 |
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Infineon Technologies |
MOSFET N-CH 600V 4.4A TO-251
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 130µA
- Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 37W (Tc)
- Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO251-3
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
|
封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存7,760 |
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Infineon Technologies |
MOSFET N-CH 60V 90A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,472 |
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Infineon Technologies |
MOSFET N-CH 60V 120A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 120µA
- Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 167W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,176 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TDSON-8
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 70µA
- Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
- Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TDSON-8
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存66,336 |
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Infineon Technologies |
MOSFET N-CH 30V 8.3A 8-SOIC
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): ±12V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 2.5W (Ta)
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SO
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存16,320 |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO-262
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 91W (Tc)
- Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-262
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存21,912 |
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Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 87W (Tc)
- Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存294,792 |
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Infineon Technologies |
MOSFET N-CH 20V 37A I-PAK
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 35W (Tc)
- Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-Pak
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
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封装: TO-251-3 Short Leads, IPak, TO-251AA |
库存13,380 |
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Infineon Technologies |
MOSFET COOL MOS 600V
- FET Type: -
- Technology: -
- Drain to Source Voltage (Vdss): -
- Current - Continuous Drain (Id) @ 25°C: -
- Drive Voltage (Max Rds On, Min Rds On): -
- Vgs(th) (Max) @ Id: -
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Vgs (Max): -
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: -
- Operating Temperature: -
- Mounting Type: -
- Supplier Device Package: -
- Package / Case: -
|
封装: - |
库存3,920 |
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Infineon Technologies |
MOSFET N-CH 40V 80A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3-1
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存7,472 |
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Infineon Technologies |
MOSFET N-CH 55V 50A TO252-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2V @ 80µA
- Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TO252-3-11
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,296 |
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Infineon Technologies |
MOSFET N-CH 60V 45A TO262-3
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Vgs(th) (Max) @ Id: 2.2V @ 35µA
- Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
- Vgs (Max): ±16V
- FET Feature: -
- Power Dissipation (Max): 71W (Tc)
- Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PG-TO262-3
- Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存4,784 |
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Infineon Technologies |
MOSFET N-CH 40V 100A PQFN5X6
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.7V @ 150µA
- Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5406pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 125W (Tc)
- Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (5x6)
- Package / Case: 8-PowerVDFN
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封装: 8-PowerVDFN |
库存7,136 |
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Infineon Technologies |
MOSFET N-CH 60V 40A 8TSDSON
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Vgs(th) (Max) @ Id: 3.3V @ 20µA
- Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
- Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PG-TSDSON-8-FL
- Package / Case: 8-PowerTDFN
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封装: 8-PowerTDFN |
库存4,944 |
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Infineon Technologies |
IC FET RF LDMOS 300W H-30275-4
- Transistor Type: LDMOS
- Frequency: 800MHz
- Gain: 16dB
- Voltage - Test: 32V
- Current Rating: 10µA
- Noise Figure: -
- Current - Test: 1.55A
- Power - Output: 100W
- Voltage - Rated: 65V
- Package / Case: 2-Flatpack, Fin Leads
- Supplier Device Package: H-30275-4
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封装: 2-Flatpack, Fin Leads |
库存6,192 |
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Infineon Technologies |
MOSFET 2N-CH 20V 10A/12A 8-SOIC
- FET Type: 2 N-Channel (Dual)
- FET Feature: Logic Level Gate
- Drain to Source Voltage (Vdss): 20V
- Current - Continuous Drain (Id) @ 25°C: 10A, 12A
- Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.55V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
- Power - Max: 2W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SO
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存5,952 |
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Infineon Technologies |
TRANS NPN 30V 0.1A SOT-323
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 30V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 250mW
- Frequency - Transition: 250MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SC-70, SOT-323
- Supplier Device Package: PG-SOT323-3
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封装: SC-70, SOT-323 |
库存5,680 |
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Infineon Technologies |
DIODE ARRAY GP 80V 200MA SOT143
- Diode Configuration: 2 Independent
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 80V
- Current - Average Rectified (Io) (per Diode): 200mA (DC)
- Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
- Speed: Small Signal =< 200mA (Io), Any Speed
- Reverse Recovery Time (trr): 4ns
- Current - Reverse Leakage @ Vr: 100nA @ 75V
- Operating Temperature - Junction: 150°C (Max)
- Mounting Type: Surface Mount
- Package / Case: TO-253-4, TO-253AA
- Supplier Device Package: PG-SOT143-4
|
封装: TO-253-4, TO-253AA |
库存42,474 |
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Infineon Technologies |
IC REG LINEAR 5V 500MA TO263-7
- Output Configuration: Positive
- Output Type: Fixed
- Number of Regulators: 1
- Voltage - Input (Max): 40V
- Voltage - Output (Min/Fixed): 5V
- Voltage - Output (Max): -
- Voltage Dropout (Max): 0.425V @ 250mA
- Current - Output: 500mA
- Current - Quiescent (Iq): -
- Current - Supply (Max): 5µA ~ 82µA
- PSRR: 59dB (100Hz)
- Control Features: Enable, Reset, Watchdog
- Protection Features: Over Current, Over Temperature, Short Circuit
- Operating Temperature: -40°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
- Supplier Device Package: PG-TO263-7
|
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA |
库存23,964 |
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Infineon Technologies |
IC SMART SECONDARY DRIVER 8SOIC
- Driven Configuration: Low-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: N-Channel MOSFET
- Voltage - Supply: 11 V ~ 19 V
- Logic Voltage - VIL, VIH: 2V, 2.25V
- Current - Peak Output (Source, Sink): 1A, 4A
- Input Type: Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 20ns, 10ns
- Operating Temperature: -25°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存4,032 |
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Infineon Technologies |
IC CTRLR SMPS QUASI-RESON 8DIP
- Output Isolation: Isolated
- Internal Switch(s): Yes
- Voltage - Breakdown: 650V
- Topology: Flyback
- Voltage - Start Up: 18V
- Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
- Duty Cycle: 50%
- Frequency - Switching: 52kHz
- Power (Watts): 30W
- Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
- Control Features: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: PG-DIP-8
- Mounting Type: Through Hole
|
封装: 8-DIP (0.300", 7.62mm) |
库存2,944 |
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Infineon Technologies |
IC CONTROLLER HSCX PLCC-44
- Applications: -
- Interface: Serial
- Voltage - Supply: 4.75 V ~ 5.25 V
- Package / Case: 44-LCC (J-Lead)
- Supplier Device Package: P-LCC-44
- Mounting Type: Surface Mount
|
封装: 44-LCC (J-Lead) |
库存6,576 |
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Infineon Technologies |
IC MCU 8BIT 24KB FLASH 64TQFP
- Core Processor: XC800
- Core Size: 8-Bit
- Speed: 24MHz
- Connectivity: CAN, SSI, UART/USART
- Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
- Number of I/O: 48
- Program Memory Size: 24KB (24K x 8)
- Program Memory Type: FLASH
- EEPROM Size: -
- RAM Size: 1.75K x 8
- Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
- Data Converters: A/D 8x10b
- Oscillator Type: Internal
- Operating Temperature: -40°C ~ 125°C (TA)
- Mounting Type: -
- Package / Case: 64-LQFP
- Supplier Device Package: 64-TQFP (10x10)
|
封装: 64-LQFP |
库存2,672 |
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Infineon Technologies |
MAGNETIC SWITCH LATCH SOT23-3
- Function: Latch
- Technology: Hall Effect
- Polarization: South Pole
- Sensing Range: 3.5mT Trip, -3.5mT Release
- Test Condition: 25°C
- Voltage - Supply: 3 V ~ 32 V
- Current - Supply (Max): 2.5mA
- Current - Output (Max): 25mA
- Output Type: Open Drain
- Features: Temperature Compensated
- Operating Temperature: -40°C ~ 170°C (TJ)
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: PG-SOT23-3-15
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封装: TO-236-3, SC-59, SOT-23-3 |
库存3,996 |
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Infineon Technologies |
IC AMP MMIC 3.6V 20MA TSLP-7
- Frequency: 170MHz ~ 1.675GHz
- P1dB: -10dBm
- Gain: 15.75dB
- Noise Figure: 1.3dB
- RF Type: General Purpose
- Voltage - Supply: 1.5 V ~ 3.6 V
- Current - Supply: 5.85mA
- Test Frequency: 470MHz
- Package / Case: 6-XFDFN Exposed Pad
- Supplier Device Package: TSLP-7-1
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封装: 6-XFDFN Exposed Pad |
库存6,696 |
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Infineon Technologies |
IC RF FRONT END LNA 6TSNP
- Frequency: -
- P1dB: -
- Gain: -
- Noise Figure: -
- RF Type: -
- Voltage - Supply: -
- Current - Supply: -
- Test Frequency: -
- Package / Case: -
- Supplier Device Package: -
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封装: - |
库存2,592 |
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