页 426 - Infineon Technologies 产品 | 黑森尔电子
联系我们
SalesDept@heisener.com 86-755-83210559-819
Language Translation

* Please refer to the English Version as our Official Version.

Infineon Technologies 产品

记录 16,988
页  426/567
图片
零件编号
制造商
描述
封装
库存
数量
hot IRG4BC30S-SPBF
Infineon Technologies

IGBT 600V 34A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 34A
  • Current - Collector Pulsed (Icm): 68A
  • Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 18A
  • Power - Max: 100W
  • Switching Energy: 260µJ (on), 3.45mJ (off)
  • Input Type: Standard
  • Gate Charge: 50nC
  • Td (on/off) @ 25°C: 22ns/540ns
  • Test Condition: 480V, 18A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存112,128
hot IRGP4640D-EPBF
Infineon Technologies

IGBT 600V 65A 250W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存14,496
AUIRGPS4067D1
Infineon Technologies

IGBT 600V 240A 750W TO-274

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 240A
  • Current - Collector Pulsed (Icm): 360A
  • Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 120A
  • Power - Max: 750W
  • Switching Energy: 8.2mJ (on), 2.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 360nC
  • Td (on/off) @ 25°C: 69ns/198ns
  • Test Condition: 400V, 120A, 4.7 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: SUPER-247 (TO-274AA)
封装: TO-247-3
库存8,724
SPI15N65C3HKSA1
Infineon Technologies

MOSFET N-CH 650V 15A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 675µA
  • Gate Charge (Qg) (Max) @ Vgs: 63nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 280 mOhm @ 9.4A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,568
IPU60R950C6BKMA1
Infineon Technologies

MOSFET N-CH 600V 4.4A TO-251

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 130µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 37W (Tc)
  • Rds On (Max) @ Id, Vgs: 950 mOhm @ 1.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO251-3
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存7,760
IPI90N06S4L04AKSA1
Infineon Technologies

MOSFET N-CH 60V 90A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13000pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 90A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,472
IPI120N06S403AKSA1
Infineon Technologies

MOSFET N-CH 60V 120A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 120µA
  • Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 167W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存4,176
hot BSC032N03S
Infineon Technologies

MOSFET N-CH 30V 50A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 70µA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 5080pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存66,336
hot IRF7807D1TRPBF
Infineon Technologies

MOSFET N-CH 30V 8.3A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 17nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±12V
  • FET Feature: Schottky Diode (Isolated)
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 25 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存16,320
hot IRFZ48ZLPBF
Infineon Technologies

MOSFET N-CH 55V 61A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1720pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 37A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-262
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存21,912
hot IRF3707PBF
Infineon Technologies

MOSFET N-CH 30V 62A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 62A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 87W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.5 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存294,792
hot IRLU3714Z
Infineon Technologies

MOSFET N-CH 20V 37A I-PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 37A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 35W (Tc)
  • Rds On (Max) @ Id, Vgs: 15 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: I-Pak
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存13,380
SIPC30N60CFDX1SA1
Infineon Technologies

MOSFET COOL MOS 600V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存3,920
IPI80N04S2H4AKSA2
Infineon Technologies

MOSFET N-CH 40V 80A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 148nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7 mOhm @ 80A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3-1
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存7,472
IPD50N06S2L13ATMA2
Infineon Technologies

MOSFET N-CH 55V 50A TO252-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 80µA
  • Gate Charge (Qg) (Max) @ Vgs: 69nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 12.7 mOhm @ 34A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3-11
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存3,296
IPI45N06S4L08AKSA1
Infineon Technologies

MOSFET N-CH 60V 45A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 64nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4780pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 71W (Tc)
  • Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存4,784
IRF40H210
Infineon Technologies

MOSFET N-CH 40V 100A PQFN5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.7V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 152nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5406pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 100A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存7,136
BSZ068N06NSATMA1
Infineon Technologies

MOSFET N-CH 60V 40A 8TSDSON

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.3V @ 20µA
  • Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 46W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TSDSON-8-FL
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存4,944
PTFA043002E V1
Infineon Technologies

IC FET RF LDMOS 300W H-30275-4

  • Transistor Type: LDMOS
  • Frequency: 800MHz
  • Gain: 16dB
  • Voltage - Test: 32V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 1.55A
  • Power - Output: 100W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30275-4
封装: 2-Flatpack, Fin Leads
库存6,192
hot IRF9910PBF
Infineon Technologies

MOSFET 2N-CH 20V 10A/12A 8-SOIC

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 10A, 12A
  • Rds On (Max) @ Id, Vgs: 13.4 mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id: 2.55V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 10V
  • Power - Max: 2W
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SO
封装: 8-SOIC (0.154", 3.90mm Width)
库存5,952
BC848BWE6327BTSA1
Infineon Technologies

TRANS NPN 30V 0.1A SOT-323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 250mW
  • Frequency - Transition: 250MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存5,680
BAS28E6327HTSA1
Infineon Technologies

DIODE ARRAY GP 80V 200MA SOT143

  • Diode Configuration: 2 Independent
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io) (per Diode): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 100nA @ 75V
  • Operating Temperature - Junction: 150°C (Max)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: PG-SOT143-4
封装: TO-253-4, TO-253AA
库存42,474
TLS850F1TAV50ATMA1
Infineon Technologies

IC REG LINEAR 5V 500MA TO263-7

  • Output Configuration: Positive
  • Output Type: Fixed
  • Number of Regulators: 1
  • Voltage - Input (Max): 40V
  • Voltage - Output (Min/Fixed): 5V
  • Voltage - Output (Max): -
  • Voltage Dropout (Max): 0.425V @ 250mA
  • Current - Output: 500mA
  • Current - Quiescent (Iq): -
  • Current - Supply (Max): 5µA ~ 82µA
  • PSRR: 59dB (100Hz)
  • Control Features: Enable, Reset, Watchdog
  • Protection Features: Over Current, Over Temperature, Short Circuit
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
  • Supplier Device Package: PG-TO263-7
封装: TO-263-8, D2Pak (7 Leads + Tab), TO-263CA
库存23,964
IR1169SPBF
Infineon Technologies

IC SMART SECONDARY DRIVER 8SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: N-Channel MOSFET
  • Voltage - Supply: 11 V ~ 19 V
  • Logic Voltage - VIL, VIH: 2V, 2.25V
  • Current - Peak Output (Source, Sink): 1A, 4A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 20ns, 10ns
  • Operating Temperature: -25°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存4,032
ICE2QR4765HKLA1
Infineon Technologies

IC CTRLR SMPS QUASI-RESON 8DIP

  • Output Isolation: Isolated
  • Internal Switch(s): Yes
  • Voltage - Breakdown: 650V
  • Topology: Flyback
  • Voltage - Start Up: 18V
  • Voltage - Supply (Vcc/Vdd): 10.5 V ~ 27 V
  • Duty Cycle: 50%
  • Frequency - Switching: 52kHz
  • Power (Watts): 30W
  • Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
  • Control Features: -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 8-DIP (0.300", 7.62mm)
  • Supplier Device Package: PG-DIP-8
  • Mounting Type: Through Hole
封装: 8-DIP (0.300", 7.62mm)
库存2,944
SAF 82525 N V2.2
Infineon Technologies

IC CONTROLLER HSCX PLCC-44

  • Applications: -
  • Interface: Serial
  • Voltage - Supply: 4.75 V ~ 5.25 V
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: P-LCC-44
  • Mounting Type: Surface Mount
封装: 44-LCC (J-Lead)
库存6,576
SAK-XC888C-6FFI 5V AC
Infineon Technologies

IC MCU 8BIT 24KB FLASH 64TQFP

  • Core Processor: XC800
  • Core Size: 8-Bit
  • Speed: 24MHz
  • Connectivity: CAN, SSI, UART/USART
  • Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
  • Number of I/O: 48
  • Program Memory Size: 24KB (24K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 1.75K x 8
  • Voltage - Supply (Vcc/Vdd): 4.5 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 64-LQFP
  • Supplier Device Package: 64-TQFP (10x10)
封装: 64-LQFP
库存2,672
TLE49611MXTMA1
Infineon Technologies

MAGNETIC SWITCH LATCH SOT23-3

  • Function: Latch
  • Technology: Hall Effect
  • Polarization: South Pole
  • Sensing Range: 3.5mT Trip, -3.5mT Release
  • Test Condition: 25°C
  • Voltage - Supply: 3 V ~ 32 V
  • Current - Supply (Max): 2.5mA
  • Current - Output (Max): 25mA
  • Output Type: Open Drain
  • Features: Temperature Compensated
  • Operating Temperature: -40°C ~ 170°C (TJ)
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3-15
封装: TO-236-3, SC-59, SOT-23-3
库存3,996
BGA728L7E6327XTSA1
Infineon Technologies

IC AMP MMIC 3.6V 20MA TSLP-7

  • Frequency: 170MHz ~ 1.675GHz
  • P1dB: -10dBm
  • Gain: 15.75dB
  • Noise Figure: 1.3dB
  • RF Type: General Purpose
  • Voltage - Supply: 1.5 V ~ 3.6 V
  • Current - Supply: 5.85mA
  • Test Frequency: 470MHz
  • Package / Case: 6-XFDFN Exposed Pad
  • Supplier Device Package: TSLP-7-1
封装: 6-XFDFN Exposed Pad
库存6,696
BGA823N5E6327XTSA1
Infineon Technologies

IC RF FRONT END LNA 6TSNP

  • Frequency: -
  • P1dB: -
  • Gain: -
  • Noise Figure: -
  • RF Type: -
  • Voltage - Supply: -
  • Current - Supply: -
  • Test Frequency: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,592