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Infineon Technologies 产品

记录 16,988
页  308/567
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IRGP6650DPBF
Infineon Technologies

IGBT 600V 80A 306W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 80A
  • Current - Collector Pulsed (Icm): 105A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 35A
  • Power - Max: 306W
  • Switching Energy: 300µJ (on), 630µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 40ns/105ns
  • Test Condition: 400V, 35A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 50ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存2,848
hot IRG4PC30FPBF
Infineon Technologies

IGBT 600V 31A 100W TO247AC

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 31A
  • Current - Collector Pulsed (Icm): 120A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 17A
  • Power - Max: 100W
  • Switching Energy: 230µJ (on), 1.18mJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 21ns/200ns
  • Test Condition: 480V, 17A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AC
封装: TO-247-3
库存23,400
IRG4BC30KD-SPBF
Infineon Technologies

IGBT 600V 28A 100W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 28A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A
  • Power - Max: 100W
  • Switching Energy: 600µJ (on), 580µJ (off)
  • Input Type: Standard
  • Gate Charge: 67nC
  • Td (on/off) @ 25°C: 60ns/160ns
  • Test Condition: 480V, 16A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): 42ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,800
hot IRFH5207TRPBF
Infineon Technologies

MOSFET N-CH 75V 13A 8-PQFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 71A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2474pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.6W (Ta), 105W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.6 mOhm @ 43A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PQFN (5x6)
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存367,128
IPI22N03S4L15AKSA1
Infineon Technologies

MOSFET N-CH 30V 22A TO262-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 10µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 31W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.9 mOhm @ 22A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存3,296
IRFR540ZTRRPBF
Infineon Technologies

MOSFET N-CH 100V 35A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 91W (Tc)
  • Rds On (Max) @ Id, Vgs: 28.5 mOhm @ 21A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,760
BTS247ZE3043AKSA1
Infineon Technologies

MOSFET N-CH 55V 33A TO220-5

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 90µA
  • Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: Temperature Sensing Diode
  • Power Dissipation (Max): 120W (Tc)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 12A, 10V
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: P-TO220-5
  • Package / Case: TO-220-5
封装: TO-220-5
库存6,016
hot IRF6629TRPBF
Infineon Technologies

MOSFET N-CH 25V 29A DIRECTFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 180A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 51nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 4260pF @ 13V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.8W (Ta), 100W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.1 mOhm @ 29A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DIRECTFET? MX
  • Package / Case: DirectFET? Isometric MX
封装: DirectFET? Isometric MX
库存15,600
IRFS3307
Infineon Technologies

MOSFET N-CH 75V 130A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 250W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 75A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,104
IPF05N03LA G
Infineon Technologies

MOSFET N-CH 25V 50A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3110pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 5.1 mOhm @ 30A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: P-TO252-3
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存6,848
IPI60R099CPAAKSA1
Infineon Technologies

MOSFET N-CH 60V 31A TO-262

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 31A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 100V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 255W (Tc)
  • Rds On (Max) @ Id, Vgs: 105 mOhm @ 18A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PG-TO262-3
  • Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
封装: TO-262-3 Long Leads, I2Pak, TO-262AA
库存3,504
IPB65R190C7ATMA1
Infineon Technologies

MOSFET N-CH TO263-3

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 650V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 290µA
  • Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 400V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 72W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 5.7A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,304
PXAC201202FCV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 2.2GHz
  • Gain: 17dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 240mA
  • Power - Output: 16W
  • Voltage - Rated: 65V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: H-37248-4
库存6,720
IRF6702M2DTR1PBF
Infineon Technologies

MOSFET 2N-CH 30V 15A DIRECTFET

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 15A
  • Rds On (Max) @ Id, Vgs: 6.6 mOhm @ 15A, 10V
  • Vgs(th) (Max) @ Id: 2.35V @ 25µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1380pF @ 15V
  • Power - Max: 2.7W
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: DirectFET? Isometric MA
  • Supplier Device Package: DIRECTFET? MA
封装: DirectFET? Isometric MA
库存2,160
BSL214NH6327XTSA1
Infineon Technologies

MOSFET 2N-CH 20V 1.5A 6TSOP

  • FET Type: 2 N-Channel (Dual)
  • FET Feature: Logic Level Gate, 2.5V Drive
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 1.5A
  • Rds On (Max) @ Id, Vgs: 140 mOhm @ 1.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 3.7µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 143pF @ 10V
  • Power - Max: 500mW
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
  • Supplier Device Package: PG-TSOP6-6
封装: SOT-23-6 Thin, TSOT-23-6
库存5,568
BCP 54-16 E6327
Infineon Technologies

TRANS NPN 45V 1A SOT-223

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: PG-SOT223-4
封装: TO-261-4, TO-261AA
库存12,864
IRAMY20UP60B
Infineon Technologies

IC PWR HYBRID 600V 20A SIP3

  • Type: IGBT
  • Configuration: 3 Phase
  • Current: 20A
  • Voltage: 600V
  • Voltage - Isolation: 2000Vrms
  • Package / Case: 22-PowerSIP Module, 18 Leads, Formed Leads
封装: 22-PowerSIP Module, 18 Leads, Formed Leads
库存17,472
IDC08S60CEX7SA1
Infineon Technologies

DIODE GEN PURPOSE SAWN WAFER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存4,832
ITS410E2HKSA1
Infineon Technologies

IC SWITCH HISIDE SMART TO220-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.7 V ~ 42 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.8A
  • Rds On (Typ): 190 mOhm
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -30°C ~ 85°C (TA)
  • Package / Case: TO-220-5 Formed Leads
  • Supplier Device Package: PG-TO220-5-3
封装: TO-220-5 Formed Leads
库存3,664
hot BTS5231GS
Infineon Technologies

IC HIGH SIDE PWR SWITCH PDSO-14

  • Switch Type: General Purpose
  • Number of Outputs: 2
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.5 V ~ 28 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 1.8A
  • Rds On (Typ): 140 mOhm (Max)
  • Input Type: Non-Inverting
  • Features: Auto Restart, Status Flag
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: 14-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: P-DSO-14
封装: 14-SOIC (0.154", 3.90mm Width)
库存207,252
BTS3046SDLATMA1
Infineon Technologies

IC SW SMART LOW SIDE TO252-3-11

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: Low Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 60V (Max)
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 3.6A
  • Rds On (Typ): 46 mOhm
  • Input Type: Non-Inverting
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: PG-TO252-3-11
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,104
ISO2H823V25XUMA1
Infineon Technologies

IC SWITCH HISIDE 70VQFN

  • Switch Type: General Purpose
  • Number of Outputs: 8
  • Ratio - Input:Output: 1:8
  • Output Configuration: High Side
  • Output Type: P-Channel
  • Interface: SPI, Parallel
  • Voltage - Load: 11 V ~ 35 V
  • Voltage - Supply (Vcc/Vdd): 2.75 V ~ 3.6 V
  • Current - Output (Max): -
  • Rds On (Typ): 210 mOhm
  • Input Type: -
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Over Temperature, UVLO
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Package / Case: 70-VFQFN Exposed Pad
  • Supplier Device Package: PG-VQFN-70-2
封装: 70-VFQFN Exposed Pad
库存6,864
BTS436L2GATMA1
Infineon Technologies

IC HIGH SIDE PWR SWITCH T0263-5

  • Switch Type: General Purpose
  • Number of Outputs: 1
  • Ratio - Input:Output: 1:1
  • Output Configuration: High Side
  • Output Type: N-Channel
  • Interface: On/Off
  • Voltage - Load: 4.75 V ~ 41 V
  • Voltage - Supply (Vcc/Vdd): Not Required
  • Current - Output (Max): 8.8A
  • Rds On (Typ): 35 mOhm
  • Input Type: -
  • Features: -
  • Fault Protection: Current Limiting (Fixed), Open Load Detect, Over Temperature, Over Voltage
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Package / Case: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
  • Supplier Device Package: PG-TO263-5-2
封装: TO-263-5, D2Pak (4 Leads + Tab), TO-263BB
库存13,800
XE164FN40F80LAAKXUMA1
Infineon Technologies

IC MCU 16BIT 320KB FLASH 100LQFP

  • Core Processor: C166SV2
  • Core Size: 16-Bit
  • Speed: 80MHz
  • Connectivity: CAN, EBI/EMI, I2C, LIN, SPI, SSC, UART/USART, USI
  • Peripherals: I2S, POR, PWM, WDT
  • Number of I/O: 75
  • Program Memory Size: 320KB (320K x 8)
  • Program Memory Type: FLASH
  • EEPROM Size: -
  • RAM Size: 34K x 8
  • Voltage - Supply (Vcc/Vdd): 3 V ~ 5.5 V
  • Data Converters: A/D 16x10b
  • Oscillator Type: Internal
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 100-LQFP Exposed Pad
  • Supplier Device Package: PG-LQFP-100-8
封装: 100-LQFP Exposed Pad
库存5,472
C164CI8E25MDBKXQMA1
Infineon Technologies

IC MCU 16BIT 64KB OTP 80MQFP

  • Core Processor: C166
  • Core Size: 16-Bit
  • Speed: 25MHz
  • Connectivity: CAN, EBI/EMI, SPI, SSC, UART/USART
  • Peripherals: POR, PWM, WDT
  • Number of I/O: 59
  • Program Memory Size: 64KB (64K x 8)
  • Program Memory Type: OTP
  • EEPROM Size: -
  • RAM Size: 4K x 8
  • Voltage - Supply (Vcc/Vdd): 4.75 V ~ 5.5 V
  • Data Converters: A/D 8x10b
  • Oscillator Type: External
  • Operating Temperature: -40°C ~ 125°C (TA)
  • Mounting Type: -
  • Package / Case: 80-QFP
  • Supplier Device Package: 80-MQFP (14x14)
封装: 80-QFP
库存3,664
SP12T-T1
Infineon Technologies

IC TIRE PRESSURE SENSOR PDSO-14

  • Sensor Type: -
  • Output Type: -
  • Operating Temperature: -
封装: -
库存8,964
TLE5041PLUSCAAMA1
Infineon Technologies

SPEED SENSORS 2SSO

  • Function: -
  • Technology: -
  • Polarization: -
  • Sensing Range: -
  • Test Condition: -
  • Voltage - Supply: -
  • Current - Supply (Max): -
  • Current - Output (Max): -
  • Output Type: -
  • Features: -
  • Operating Temperature: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,886
BGS1515MN20E6327XTSA1
Infineon Technologies

IC SWITCH RF 20TSNP

  • Frequency - Lower: -
  • Frequency - Upper: -
  • Isolation @ Frequency: -
  • Insertion Loss @ Frequency: -
  • IIP3: -
  • Topology: -
  • Circuit: -
  • P1dB: -
  • Features: -
  • Impedance: -
  • Operating Temperature: -
  • Voltage - Supply: -
  • RF Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存8,946
CHL8228G-14CRT
Infineon Technologies

IC REGULATOR PG-VQFN-56-901

  • Applications: -
  • Voltage - Input: -
  • Number of Outputs: -
  • Voltage - Output: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存7,008
TC213L8F133NACLXUMA1
Infineon Technologies

IC MCU 32BIT 512KB FLASH 100TQFP

  • Core Processor: -
  • Core Size: -
  • Speed: -
  • Connectivity: -
  • Peripherals: -
  • Number of I/O: -
  • Program Memory Size: -
  • Program Memory Type: -
  • EEPROM Size: -
  • RAM Size: -
  • Voltage - Supply (Vcc/Vdd): -
  • Data Converters: -
  • Oscillator Type: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
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