页 118 - Infineon Technologies 产品

零件编号	制造商	描述	封装	库存
IPI12CN10N G	Infineon Technologies	MOSFET N-CH 100V 67A TO262-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 67A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 83µA Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: PG-TO262-3 Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存2,048
IPB160N04S203ATMA1	Infineon Technologies	MOSFET N-CH 40V 160A TO263-7 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-7-3 Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB	库存2,128
IRL3402STRLPBF	Infineon Technologies	MOSFET N-CH 20V 85A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V Vgs (Max): ±10V FET Feature: - Power Dissipation (Max): 110W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,200
IRFR3704TRLPBF	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 90W (Tc) Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存100,656
IRL3705ZSPBF	Infineon Technologies	MOSFET N-CH 55V 75A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V Vgs (Max): ±16V FET Feature: - Power Dissipation (Max): 130W (Tc) Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,160
IRFC2604B	Infineon Technologies	MOSFET FET Type: - Technology: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Drive Voltage (Max Rds On, Min Rds On): - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Vgs (Max): - FET Feature: - Power Dissipation (Max): - Rds On (Max) @ Id, Vgs: - Operating Temperature: - Mounting Type: Surface Mount Supplier Device Package: - Package / Case: -	封装: -	库存7,584
IRFR3706	Infineon Technologies	MOSFET N-CH 20V 75A DPAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V Vgs (Max): ±12V FET Feature: - Power Dissipation (Max): 88W (Tc) Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D-Pak Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存20,880
IRF520NSTRL	Infineon Technologies	MOSFET N-CH 100V 9.7A D2PAK FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: D2PAK Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,376
IRFB23N20D	Infineon Technologies	MOSFET N-CH 200V 24A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 200V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V Vgs (Max): ±30V FET Feature: - Power Dissipation (Max): 3.8W (Ta), 170W (Tc) Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存6,640
IPB120N06S403ATMA2	Infineon Technologies	MOSFET N-CH 60V 120A TO263-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 120µA Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO263-3-2 Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,952
IRFHS8242TRPBF	Infineon Technologies	MOSFET N-CH 25V 9.9A PQFN FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs(th) (Max) @ Id: 2.35V @ 25µA Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-PQFN (2x2) Package / Case: 6-PowerVDFN	封装: 6-PowerVDFN	库存482,568
IPD75N04S406ATMA1	Infineon Technologies	MOSFET N-CH 40V 75A TO252-3-313 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 26µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 58W (Tc) Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 75A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Supplier Device Package: PG-TO252-3-313 Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存5,296
IRF520NPBF	Infineon Technologies	MOSFET N-CH 100V 9.7A TO-220AB FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V Vgs (Max): ±20V FET Feature: - Power Dissipation (Max): 48W (Tc) Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220AB Package / Case: TO-220-3	封装: TO-220-3	库存8,868
PTFA180701FV4R250XTMA1	Infineon Technologies	IC FET RF LDMOS 70W H-37265-2 Transistor Type: LDMOS Frequency: 1.84GHz Gain: 16.5dB Voltage - Test: 28V Current Rating: 10µA Noise Figure: - Current - Test: 550mA Power - Output: 60W Voltage - Rated: 65V Package / Case: 2-Flatpack, Fin Leads, Flanged Supplier Device Package: H-37265-2	封装: 2-Flatpack, Fin Leads, Flanged	库存4,560
BSG0810NDIATMA1	Infineon Technologies	MOSFET 2N-CH 25V 19A/39A 8TISON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 19A, 39A Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V Power - Max: 2.5W Operating Temperature: -55°C ~ 155°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封装: 8-PowerTDFN	库存6,256
BCX42E6433HTMA1	Infineon Technologies	TRANS PNP 125V 0.8A SOT-23 Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 125V Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V Power - Max: 330mW Frequency - Transition: 150MHz Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存6,208
BCR148E6327HTSA1	Infineon Technologies	TRANS PREBIAS NPN 0.2W SOT23-3 Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 47k Resistor - Emitter Base (R2) (Ohms): 47k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 100MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3	封装: TO-236-3, SC-59, SOT-23-3	库存292,092
BFP420H6433XTMA1	Infineon Technologies	TRANS RF NPN 25GHZ 4.5V SOT343 Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 5V Frequency - Transition: 25GHz Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz Gain: 21dB Power - Max: 160mW DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V Current - Collector (Ic) (Max): 35mA Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: SOT-343	封装: SC-82A, SOT-343	库存5,904
IRD3CH9DD6	Infineon Technologies	DIODE CHIP EMITTER CONTROLLED Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,664
IR3564MBTRPBF	Infineon Technologies	IC REG CTRLR DL BUCK PWM 40QFN Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2 Voltage - Input: 3.3V Number of Outputs: 2 Voltage - Output: - Operating Temperature: -40°C ~ 85°C Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,664
IR2155PBF	Infineon Technologies	IC DRIVER HALF BRIDGE OSC 8DIP Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: - Current - Peak Output (Source, Sink): 250mA, 500mA Input Type: RC Input Circuit High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 80ns, 45ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	封装: 8-DIP (0.300", 7.62mm)	库存10,068
IRS21844STRPBF	Infineon Technologies	IC DRIVER HALF-BRIDGE 14-SOIC Driven Configuration: Half-Bridge Channel Type: Synchronous Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Voltage - Supply: 10 V ~ 20 V Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 1.9A, 2.3A Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600V Rise / Fall Time (Typ): 40ns, 20ns Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Supplier Device Package: 14-SOIC	封装: 14-SOIC (0.154", 3.90mm Width)	库存109,260
XC878M16FFI3V3ACFXUMA1	Infineon Technologies	IC MCU 8BIT 64KB FLASH 64LQFP Core Processor: XC800 Core Size: 8-Bit Speed: 27MHz Connectivity: SPI, SSI, UART/USART Peripherals: Brown-out Detect/Reset, POR, PWM, WDT Number of I/O: 40 Program Memory Size: 64KB (64K x 8) Program Memory Type: FLASH EEPROM Size: - RAM Size: 3.25K x 8 Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V Data Converters: A/D 8x10b Oscillator Type: Internal Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: - Package / Case: 64-LQFP Supplier Device Package: 64-LQFP (10x10)	封装: 64-LQFP	库存3,840
KTY11-5	Infineon Technologies	IC TEMPERATURE SENSOR TO-92MINI Resistance in Ohms @ 25°C: 1.97k Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Power - Max: - Mounting Type: Through Hole Package / Case: TO-226-2, TO-92-2 (TO-226AC) Supplier Device Package: TO-92MINI	封装: TO-226-2, TO-92-2 (TO-226AC)	库存3,186
KTY135	Infineon Technologies	SENSOR TEMP RESISTIVE SOT-23 Resistance in Ohms @ 25°C: 1.97k Resistance Tolerance: ±3% Operating Temperature: -50°C ~ 150°C Power - Max: - Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	封装: TO-236-3, SC-59, SOT-23-3	库存7,524
TLE4954CBE4XTMA1	Infineon Technologies	MAGNETIC SWITCH SPEC PURP SSO-2 Function: Special Purpose Technology: Hall Effect Polarization: North Pole, South Pole Sensing Range: 2.2mT Trip, -2.2mT Release Test Condition: 25°C Voltage - Supply: 4 V ~ 20 V Current - Supply (Max): 7mA Current - Output (Max): 14mA Output Type: PWM Features: - Operating Temperature: -40°C ~ 170°C (TJ) Package / Case: 2-SIP, SSO-2-53 Supplier Device Package: PG-SSO-2-53	封装: 2-SIP, SSO-2-53	库存3,454
TLE7238SLXUMA2	Infineon Technologies	IC DRIVER SPI RELAY CTRL 24SSOP Switch Type: - Number of Outputs: - Ratio - Input:Output: - Output Configuration: - Output Type: - Interface: - Voltage - Load: - Voltage - Supply (Vcc/Vdd): - Current - Output (Max): - Rds On (Typ): - Input Type: - Features: - Fault Protection: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存2,704
IR3567AMQA04TRP	Infineon Technologies	IC REG BUCK 56VQFN Output Type: - Function: - Output Configuration: - Topology: - Number of Outputs: - Output Phases: - Voltage - Supply (Vcc/Vdd): - Frequency - Switching: - Duty Cycle (Max): - Synchronous Rectifier: - Clock Sync: - Serial Interfaces: - Control Features: - Operating Temperature: - Package / Case: - Supplier Device Package: -	封装: -	库存7,008
TC213L8F133NACKXUMA1	Infineon Technologies	IC MCU 32BIT 512KB FLASH 100TQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存5,424
C164CI8RMCAKXUMA5	Infineon Technologies	IC MCU 16BIT 80MQFP Core Processor: - Core Size: - Speed: - Connectivity: - Peripherals: - Number of I/O: - Program Memory Size: - Program Memory Type: - EEPROM Size: - RAM Size: - Voltage - Supply (Vcc/Vdd): - Data Converters: - Oscillator Type: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: 80-MQFP	封装: -	库存7,456

IPI12CN10N G

Infineon Technologies

MOSFET N-CH 100V 67A TO262-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 67A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 83µA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4320pF @ 50V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO262-3
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存2,048

IPB160N04S203ATMA1

Infineon Technologies

MOSFET N-CH 40V 160A TO263-7

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 170nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5300pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 60A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-7-3
Package / Case: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

封装: TO-263-7, D2Pak (6 Leads + Tab), TO-263CB

库存2,128

IRL3402STRLPBF

Infineon Technologies

MOSFET N-CH 20V 85A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 78nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 15V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 110W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 51A, 7V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,200

IRFR3704TRLPBF

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1996pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存100,656

IRL3705ZSPBF

Infineon Technologies

MOSFET N-CH 55V 75A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 55V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 60nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 2880pF @ 25V
Vgs (Max): ±16V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 52A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,160

IRFC2604B

Infineon Technologies

MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

封装: -

库存7,584

IRFR3706

Infineon Technologies

MOSFET N-CH 20V 75A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 10V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 9 mOhm @ 15A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存20,880

IRF520NSTRL

Infineon Technologies

MOSFET N-CH 100V 9.7A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,376

IRFB23N20D

Infineon Technologies

MOSFET N-CH 200V 24A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 86nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 3.8W (Ta), 170W (Tc)
Rds On (Max) @ Id, Vgs: 100 mOhm @ 14A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存6,640

IPB120N06S403ATMA2

Infineon Technologies

MOSFET N-CH 60V 120A TO263-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 160nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 13150pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 100A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO263-3-2
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,952

IRFHS8242TRPBF

Infineon Technologies

MOSFET N-CH 25V 9.9A PQFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), 21A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.35V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 10.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 653pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 13 mOhm @ 8.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 6-PQFN (2x2)
Package / Case: 6-PowerVDFN

封装: 6-PowerVDFN

库存482,568

IPD75N04S406ATMA1

Infineon Technologies

MOSFET N-CH 40V 75A TO252-3-313

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 26µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 75A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,296

IRF520NPBF

Infineon Technologies

MOSFET N-CH 100V 9.7A TO-220AB

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 48W (Tc)
Rds On (Max) @ Id, Vgs: 200 mOhm @ 5.7A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存8,868

PTFA180701FV4R250XTMA1

Infineon Technologies

IC FET RF LDMOS 70W H-37265-2

Transistor Type: LDMOS
Frequency: 1.84GHz
Gain: 16.5dB
Voltage - Test: 28V
Current Rating: 10µA
Noise Figure: -
Current - Test: 550mA
Power - Output: 60W
Voltage - Rated: 65V
Package / Case: 2-Flatpack, Fin Leads, Flanged
Supplier Device Package: H-37265-2

封装: 2-Flatpack, Fin Leads, Flanged

库存4,560

BSG0810NDIATMA1

Infineon Technologies

MOSFET 2N-CH 25V 19A/39A 8TISON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 19A, 39A
Rds On (Max) @ Id, Vgs: 3 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1040pF @ 12V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封装: 8-PowerTDFN

库存6,256

BCX42E6433HTMA1

Infineon Technologies

TRANS PNP 125V 0.8A SOT-23

Transistor Type: PNP
Current - Collector (Ic) (Max): 800mA
Voltage - Collector Emitter Breakdown (Max): 125V
Vce Saturation (Max) @ Ib, Ic: 900mV @ 30mA, 300mA
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 200mA, 1V
Power - Max: 330mW
Frequency - Transition: 150MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存6,208

BCR148E6327HTSA1

Infineon Technologies

TRANS PREBIAS NPN 0.2W SOT23-3

Transistor Type: NPN - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1) (Ohms): 47k
Resistor - Emitter Base (R2) (Ohms): 47k
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
Frequency - Transition: 100MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3

封装: TO-236-3, SC-59, SOT-23-3

库存292,092

BFP420H6433XTMA1

Infineon Technologies

TRANS RF NPN 25GHZ 4.5V SOT343

Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 5V
Frequency - Transition: 25GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1.8GHz
Gain: 21dB
Power - Max: 160mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 20mA, 4V
Current - Collector (Ic) (Max): 35mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: SOT-343

封装: SC-82A, SOT-343

库存5,904

IRD3CH9DD6

Infineon Technologies

DIODE CHIP EMITTER CONTROLLED

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,664

IR3564MBTRPBF

Infineon Technologies

IC REG CTRLR DL BUCK PWM 40QFN

Applications: Controller, Intel VR12, VR12.5, AMD SVI1, SVI2
Voltage - Input: 3.3V
Number of Outputs: 2
Voltage - Output: -
Operating Temperature: -40°C ~ 85°C
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,664

IR2155PBF

Infineon Technologies

IC DRIVER HALF BRIDGE OSC 8DIP

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: -
Current - Peak Output (Source, Sink): 250mA, 500mA
Input Type: RC Input Circuit
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 80ns, 45ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Supplier Device Package: 8-DIP

封装: 8-DIP (0.300", 7.62mm)

库存10,068

IRS21844STRPBF

Infineon Technologies

IC DRIVER HALF-BRIDGE 14-SOIC

Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Voltage - Supply: 10 V ~ 20 V
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 1.9A, 2.3A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600V
Rise / Fall Time (Typ): 40ns, 20ns
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 14-SOIC

封装: 14-SOIC (0.154", 3.90mm Width)

库存109,260

XC878M16FFI3V3ACFXUMA1

Infineon Technologies

IC MCU 8BIT 64KB FLASH 64LQFP

Core Processor: XC800
Core Size: 8-Bit
Speed: 27MHz
Connectivity: SPI, SSI, UART/USART
Peripherals: Brown-out Detect/Reset, POR, PWM, WDT
Number of I/O: 40
Program Memory Size: 64KB (64K x 8)
Program Memory Type: FLASH
EEPROM Size: -
RAM Size: 3.25K x 8
Voltage - Supply (Vcc/Vdd): 3 V ~ 3.6 V
Data Converters: A/D 8x10b
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: -
Package / Case: 64-LQFP
Supplier Device Package: 64-LQFP (10x10)

封装: 64-LQFP

库存3,840

KTY11-5

Infineon Technologies

IC TEMPERATURE SENSOR TO-92MINI

Resistance in Ohms @ 25°C: 1.97k
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Power - Max: -
Mounting Type: Through Hole
Package / Case: TO-226-2, TO-92-2 (TO-226AC)
Supplier Device Package: TO-92MINI

封装: TO-226-2, TO-92-2 (TO-226AC)

库存3,186

KTY135

Infineon Technologies

SENSOR TEMP RESISTIVE SOT-23

Resistance in Ohms @ 25°C: 1.97k
Resistance Tolerance: ±3%
Operating Temperature: -50°C ~ 150°C
Power - Max: -
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存7,524

TLE4954CBE4XTMA1

Infineon Technologies

MAGNETIC SWITCH SPEC PURP SSO-2

Function: Special Purpose
Technology: Hall Effect
Polarization: North Pole, South Pole
Sensing Range: 2.2mT Trip, -2.2mT Release
Test Condition: 25°C
Voltage - Supply: 4 V ~ 20 V
Current - Supply (Max): 7mA
Current - Output (Max): 14mA
Output Type: PWM
Features: -
Operating Temperature: -40°C ~ 170°C (TJ)
Package / Case: 2-SIP, SSO-2-53
Supplier Device Package: PG-SSO-2-53

封装: 2-SIP, SSO-2-53

库存3,454

TLE7238SLXUMA2

Infineon Technologies

IC DRIVER SPI RELAY CTRL 24SSOP

Switch Type: -
Number of Outputs: -
Ratio - Input:Output: -
Output Configuration: -
Output Type: -
Interface: -
Voltage - Load: -
Voltage - Supply (Vcc/Vdd): -
Current - Output (Max): -
Rds On (Typ): -
Input Type: -
Features: -
Fault Protection: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存2,704

IR3567AMQA04TRP

Infineon Technologies

IC REG BUCK 56VQFN

Output Type: -
Function: -
Output Configuration: -
Topology: -
Number of Outputs: -
Output Phases: -
Voltage - Supply (Vcc/Vdd): -
Frequency - Switching: -
Duty Cycle (Max): -
Synchronous Rectifier: -
Clock Sync: -
Serial Interfaces: -
Control Features: -
Operating Temperature: -
Package / Case: -
Supplier Device Package: -

封装: -

库存7,008

TC213L8F133NACKXUMA1

Infineon Technologies

IC MCU 32BIT 512KB FLASH 100TQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存5,424

C164CI8RMCAKXUMA5

Infineon Technologies

IC MCU 16BIT 80MQFP

Core Processor: -
Core Size: -
Speed: -
Connectivity: -
Peripherals: -
Number of I/O: -
Program Memory Size: -
Program Memory Type: -
EEPROM Size: -
RAM Size: -
Voltage - Supply (Vcc/Vdd): -
Data Converters: -
Oscillator Type: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: 80-MQFP

封装: -

库存7,456