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IXYS |
IGBT 600V 75A 500W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 50A
- Power - Max: 500W
- Switching Energy: 1mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 28ns/160ns
- Test Condition: 400V, 50A, 3.3 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
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封装: TO-264-3, TO-264AA |
库存6,208 |
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IXYS |
IGBT 600V 60A 220W TO247
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 60A
- Current - Collector Pulsed (Icm): 150A
- Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 20A
- Power - Max: 220W
- Switching Energy: 120µJ (on), 90µJ (off)
- Input Type: Standard
- Gate Charge: 38nC
- Td (on/off) @ 25°C: 17ns/42ns
- Test Condition: 300V, 20A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD (IXGH)
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封装: TO-247-3 |
库存390,000 |
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IXYS |
IGBT 2500V 5A 32W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 2500V
- Current - Collector (Ic) (Max): 5A
- Current - Collector Pulsed (Icm): 13A
- Vce(on) (Max) @ Vge, Ic: 3.5V @ 15V, 2A
- Power - Max: 32W
- Switching Energy: -
- Input Type: Standard
- Gate Charge: 10.6nC
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): 920ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存6,784 |
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IXYS |
IGBT 1200V 75A 300W TO268
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 180A
- Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 45A
- Power - Max: 300W
- Switching Energy: 14mJ (off)
- Input Type: Standard
- Gate Charge: 170nC
- Td (on/off) @ 25°C: 55ns/370ns
- Test Condition: 960V, 45A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,312 |
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IXYS |
IGBT 600V 120A 300W TO263AA
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 120A
- Current - Collector Pulsed (Icm): 300A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 32A
- Power - Max: 300W
- Switching Energy: 950µJ (on), 2.9mJ (off)
- Input Type: Standard
- Gate Charge: 110nC
- Td (on/off) @ 25°C: 25ns/334ns
- Test Condition: 480V, 32A, 5 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (IXGA)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存5,120 |
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IXYS |
IGBT 300V 223W TO220AB
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 300V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): 250A
- Vce(on) (Max) @ Vge, Ic: 1.85V @ 15V, 42A
- Power - Max: 223W
- Switching Energy: 120µJ (on), 150µJ (off)
- Input Type: Standard
- Gate Charge: 76nC
- Td (on/off) @ 25°C: 21ns/113ns
- Test Condition: 200V, 21A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存6,880 |
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IXYS |
MOD IGBT SIXPACK E+
- IGBT Type: NPT
- Configuration: Three Phase
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 500A
- Power - Max: 2200W
- Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 300A
- Current - Collector Cutoff (Max): 1mA
- Input Capacitance (Cies) @ Vce: 33nF @ 25V
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E+
- Supplier Device Package: E+
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封装: E+ |
库存4,288 |
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IXYS |
IGBT MODULE 1200V 84A
- IGBT Type: PT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 1200V
- Current - Collector (Ic) (Max): 120A
- Power - Max: 390W
- Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 77A
- Current - Collector Cutoff (Max): 200µA
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存4,624 |
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IXYS |
MOSFET N-CH 85V 70A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2570pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 176W (Tc)
- Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 25A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存3,728 |
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IXYS |
MOSFET N-CH 550V 72A PLUS264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 550V
- Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 258nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 10500pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 890W (Tc)
- Rds On (Max) @ Id, Vgs: 72 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS264?
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存4,592 |
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IXYS |
MOSFET N-CH 800V 28A ISOPLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 7500pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 17A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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封装: ISOPLUS247? |
库存2,224 |
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IXYS |
MOSFET N-CH 55V 550A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 55V
- Current - Continuous Drain (Id) @ 25°C: 550A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 595nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 40000pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 1.6 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264 (IXTK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存7,824 |
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IXYS |
MOSFET N-CH 900V 12A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 900V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Rds On (Max) @ Id, Vgs: 900 mOhm @ 6A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存5,120 |
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IXYS |
MOSFET N-CH 500V 4.4A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 4.4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Rds On (Max) @ Id, Vgs: 800 mOhm @ 4A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存4,032 |
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IXYS |
MOSFET N-CH 600V 7A TO-220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1080pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220AB
- Package / Case: TO-220-3
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封装: TO-220-3 |
库存6,176 |
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IXYS |
MOSFET N-CH 1000V 6A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1000V
- Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2200pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 180W (Tc)
- Rds On (Max) @ Id, Vgs: 1.9 Ohm @ 3A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXFH)
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存68,232 |
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IXYS |
MOSFET N-CH 500V 60A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 610nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 24000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 960W (Tc)
- Rds On (Max) @ Id, Vgs: 100 mOhm @ 30A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存7,776 |
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IXYS |
MOSFET N-CH 600V 64A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 96 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存3,552 |
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IXYS |
SCR THYRISTOR SGL 1400V WC-800
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1400V
- Current - On State (It (AV)) (Max): -
- Current - On State (It (RMS)) (Max): -
- Voltage - Gate Trigger (Vgt) (Max): -
- Current - Gate Trigger (Igt) (Max): -
- Current - Non Rep. Surge 50, 60Hz (Itsm): -
- Current - Hold (Ih) (Max): -
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: WC-800
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封装: WC-800 |
库存3,392 |
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IXYS |
MOD THYRISTOR 3PH 3X28A 1600V
- Structure: Common Cathode - All SCRs
- Number of SCRs, Diodes: 3 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 28A
- Current - On State (It (RMS)) (Max): 43A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 550A, 600A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Module
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封装: Module |
库存6,752 |
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IXYS |
RECT BRIDGE 3PH 27A 1600V KAMM
- Structure: Bridge, 3-Phase - SCRs/Diodes
- Number of SCRs, Diodes: 3 SCRs, 3 Diodes
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 21A
- Current - On State (It (RMS)) (Max): 16A
- Voltage - Gate Trigger (Vgt) (Max): 1V
- Current - Gate Trigger (Igt) (Max): 65mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 300A, 320A
- Current - Hold (Ih) (Max): 100mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: KAMM
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封装: KAMM |
库存3,344 |
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IXYS |
MOD THYRISTOR/DIODE 1800V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1800V
- Current - On State (It (AV)) (Max): 320A
- Current - On State (It (RMS)) (Max): 500A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 9200A, 9800A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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封装: Y2-DCB |
库存6,624 |
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IXYS |
MOD THYRISTOR SGL 1200V SOT-227B
- Structure: Single
- Number of SCRs, Diodes: 1 SCR
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 149A
- Current - On State (It (RMS)) (Max): 234A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 2000A, 2150A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存5,872 |
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IXYS |
DIODE MODULE 38KV 2A
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 38000V
- Current - Average Rectified (Io) (per Diode): 2A
- Voltage - Forward (Vf) (Max) @ If: 36.8V @ 12A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 500µA @ 38000V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存6,432 |
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IXYS |
DIODE MODULE 1.8KV 950A
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 950A
- Voltage - Forward (Vf) (Max) @ If: 880mV @ 500A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 18µs
- Current - Reverse Leakage @ Vr: 50mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Module
- Supplier Device Package: Module
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封装: Module |
库存3,280 |
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IXYS |
DIODE MODULE 1.2KV 50A TO240AA
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io) (per Diode): 50A
- Voltage - Forward (Vf) (Max) @ If: 1.18V @ 50A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 100µA @ 1200V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
- Supplier Device Package: TO-240AA
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封装: TO-240AA |
库存4,832 |
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IXYS |
DIODE ARRAY GP 200V 15A TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 15A
- Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,160 |
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IXYS |
IC MOSF DRIVER FAST DUAL 8-SOIC
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
- Supplier Device Package: 8-SOIC
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封装: 8-SOIC (0.154", 3.90mm Width) |
库存7,440 |
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IXYS |
IC MOSF DRIVER FAST DUAL 8-DIP
- Driven Configuration: Low-Side
- Channel Type: Independent
- Number of Drivers: 2
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 4.5 V ~ 30 V
- Logic Voltage - VIL, VIH: 0.8V, 3V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): -
- Rise / Fall Time (Typ): 7.5ns, 6.5ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 8-DIP (0.300", 7.62mm)
- Supplier Device Package: 8-PDIP
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封装: 8-DIP (0.300", 7.62mm) |
库存2,000 |
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IXYS |
IC HIGH SIDE DRIVER 16SOIC
- Driven Configuration: High-Side
- Channel Type: Single
- Number of Drivers: 1
- Gate Type: IGBT, N-Channel, P-Channel MOSFET
- Voltage - Supply: 10 V ~ 20 V
- Logic Voltage - VIL, VIH: 1V, 3.65V
- Current - Peak Output (Source, Sink): 2A, 2A
- Input Type: Non-Inverting
- High Side Voltage - Max (Bootstrap): 1200V
- Rise / Fall Time (Typ): 15ns, 15ns
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 16-SOIC (0.295", 7.50mm Width)
- Supplier Device Package: 16-SOIC
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封装: 16-SOIC (0.295", 7.50mm Width) |
库存6,688 |
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