页 131 - IXYS 产品 | 深圳黑森尔电子
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IXYS 产品

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hot IXGQ90N33TCD1
IXYS

IGBT 330V 90A 200W TO3P

  • IGBT Type: Trench
  • Voltage - Collector Emitter Breakdown (Max): 330V
  • Current - Collector (Ic) (Max): 90A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 45A
  • Power - Max: 200W
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: 69nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存6,832
IXGK55N120A3H1
IXYS

IGBT 1200V 125A 460W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 125A
  • Current - Collector Pulsed (Icm): 400A
  • Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
  • Power - Max: 460W
  • Switching Energy: 5.1mJ (on), 13.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 185nC
  • Td (on/off) @ 25°C: 23ns/365ns
  • Test Condition: 960V, 55A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): 200ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: TO-264 (IXGK)
封装: TO-264-3, TO-264AA
库存7,344
IXGH40N120C3
IXYS

IGBT 1200V 75A 380W TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 4.4V @ 15V, 30A
  • Power - Max: 380W
  • Switching Energy: 1.8mJ (on), 550µJ (off)
  • Input Type: Standard
  • Gate Charge: 142nC
  • Td (on/off) @ 25°C: 17ns/130ns
  • Test Condition: 600V, 30A, 3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存7,568
MIXA40W1200TED
IXYS

IGBT MODULE 1200V 40A

  • IGBT Type: PT
  • Configuration: Three Phase Inverter with Brake
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 60A
  • Power - Max: 195W
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 35A
  • Current - Collector Cutoff (Max): 2.1mA
  • Input Capacitance (Cies) @ Vce: -
  • Input: Standard
  • NTC Thermistor: Yes
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: E2
  • Supplier Device Package: E2
封装: E2
库存3,472
hot IRFP250
IXYS

MOSFET N-CH 200V 30A TO-247AD

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 140nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2970pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 190W (Tc)
  • Rds On (Max) @ Id, Vgs: 85 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247AD
  • Package / Case: TO-247-3
封装: TO-247-3
库存137,112
IXFE73N30Q
IXYS

MOSFET N-CH 300V 66A SOT-227B

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300V
  • Current - Continuous Drain (Id) @ 25°C: 66A
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 190nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 400W (Tc)
  • Rds On (Max) @ Id, Vgs: 46 mOhm @ 36.5A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Supplier Device Package: SOT-227B
  • Package / Case: SOT-227-4, miniBLOC
封装: SOT-227-4, miniBLOC
库存6,256
IXFX170N20P
IXYS

MOSFET N-CH 200V 170A PLUS247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 200V
  • Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1250W (Tc)
  • Rds On (Max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS247?-3
  • Package / Case: TO-247-3
封装: TO-247-3
库存7,280
hot IXTA90N15T
IXYS

MOSFET N-CH 150V 90A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 455W (Tc)
  • Rds On (Max) @ Id, Vgs: 20 mOhm @ 45A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存103,464
IXFA16N50P3
IXYS

MOSFET N-CH 500V 16A TO-263AA

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1515pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 330W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXFA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,416
IXFP130N10T2
IXYS

MOSFET N-CH 100V 130A TO-220

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 130nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 360W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 65A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存5,824
hot IXFB70N60Q2
IXYS

MOSFET N-CH 600V 70A PLUS264

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5.5V @ 8mA
  • Gate Charge (Qg) (Max) @ Vgs: 265nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 12000pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 890W (Tc)
  • Rds On (Max) @ Id, Vgs: 88 mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: PLUS264?
  • Package / Case: TO-264-3, TO-264AA
封装: TO-264-3, TO-264AA
库存4,736
GWM120-0075X1-SLSAM
IXYS

MOSFET 6N-CH 75V 110A ISOPLUS

  • FET Type: 6 N-Channel (3-Phase Bridge)
  • FET Feature: Standard
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 110A
  • Rds On (Max) @ Id, Vgs: 4.9 mOhm @ 60A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 115nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Power - Max: -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 17-SMD, Flat Leads
  • Supplier Device Package: ISOPLUS-DIL?
封装: 17-SMD, Flat Leads
库存4,256
CMA30E1600PN
IXYS

SCR PHASE CTRL 1600V TO-220ABFP

  • Voltage - Off State: 1600V
  • Voltage - Gate Trigger (Vgt) (Max): 1.3V
  • Current - Gate Trigger (Igt) (Max): 28mA
  • Voltage - On State (Vtm) (Max): 1.7V
  • Current - On State (It (AV)) (Max): 30A
  • Current - On State (It (RMS)) (Max): 50A
  • Current - Hold (Ih) (Max): 60mA
  • Current - Off State (Max): 10µA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 260A, 280A
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: TO-220ABFP
封装: TO-220-3 Full Pack, Isolated Tab
库存6,096
MCA500-16IO1
IXYS

SCR THRYRISTOR CA 1600V WC-500

  • Structure: Common Anode - All SCRs
  • Number of SCRs, Diodes: 2 SCRs
  • Voltage - Off State: 1600V
  • Current - On State (It (AV)) (Max): 545A
  • Current - On State (It (RMS)) (Max): 1294A
  • Voltage - Gate Trigger (Vgt) (Max): 3V
  • Current - Gate Trigger (Igt) (Max): 300mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 16500A @ 50Hz
  • Current - Hold (Ih) (Max): 1A
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: WC-500
封装: WC-500
库存2,688
DGS15-018CS
IXYS

DIODE SCHOTTKY 180V 24A TO252AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 180V
  • Current - Average Rectified (Io): 24A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 7.5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 23ns
  • Current - Reverse Leakage @ Vr: 250µA @ 180V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,096
DPG30I300PA
IXYS

DIODE GEN PURP 300V 30A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 1µA @ 300V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-220-2
库存2,240
DSSK80-003B
IXYS

DIODE ARRAY SCHOTTKY 30V TO247AD

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io) (per Diode): 40A
  • Voltage - Forward (Vf) (Max) @ If: 480mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 40mA @ 30V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD
封装: TO-247-3
库存3,456
DHG10C600PB
IXYS

DIODE ARRAY GP 600V 5A TO220AB

  • Diode Configuration: 1 Pair Common Cathode
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io) (per Diode): 5A
  • Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Operating Temperature - Junction: -55°C ~ 150°C
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存7,968
hot VUO34-16NO1
IXYS

RECT BRIDGE 3PH 36A 1600V V1-A

  • Diode Type: Three Phase
  • Technology: Standard
  • Voltage - Peak Reverse (Max): 1600V
  • Current - Average Rectified (Io): 36A
  • Voltage - Forward (Vf) (Max) @ If: 1.13V @ 50A
  • Current - Reverse Leakage @ Vr: 20µA @ 1600V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: V1-A
  • Supplier Device Package: V1-A
封装: V1-A
库存4,624
hot LDS8845-002-T2
IXYS

IC LED DRVR LIN DIM 30MA 16TQFN

  • Type: Linear
  • Topology: -
  • Internal Switch(s): Yes
  • Number of Outputs: 4
  • Voltage - Supply (Min): 2.7V
  • Voltage - Supply (Max): 5.5V
  • Voltage - Output: 6V
  • Current - Output / Channel: 30mA
  • Frequency: -
  • Dimming: PWM
  • Applications: Backlight
  • Operating Temperature: -40°C ~ 85°C (TA)
  • Mounting Type: Surface Mount
  • Package / Case: 16-WFQFN Exposed Pad
  • Supplier Device Package: 16-TQFN (3x3)
封装: 16-WFQFN Exposed Pad
库存24,600
IXDN514SIAT/R
IXYS

IC GATE DRIVER SGL 14A 8-SOIC

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 1V, 2.5V
  • Current - Peak Output (Source, Sink): 14A, 14A
  • Input Type: Non-Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 22ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
  • Supplier Device Package: 8-SOIC
封装: 8-SOIC (0.154", 3.90mm Width)
库存3,584
IXDI509D1T/R
IXYS

IC GATE DRIVER SGL 9A 6-DFN

  • Driven Configuration: Low-Side
  • Channel Type: Single
  • Number of Drivers: 1
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 4.5 V ~ 30 V
  • Logic Voltage - VIL, VIH: 0.8V, 2.4V
  • Current - Peak Output (Source, Sink): 9A, 9A
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): -
  • Rise / Fall Time (Typ): 25ns, 23ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (4x5)
封装: 6-VDFN Exposed Pad
库存7,664
IXA531L4
IXYS

IC BRIDGE DRVR 3PH 500MA 44-PLCC

  • Driven Configuration: Half-Bridge
  • Channel Type: 3-Phase
  • Number of Drivers: 6
  • Gate Type: IGBT, N-Channel, P-Channel MOSFET
  • Voltage - Supply: 8 V ~ 35 V
  • Logic Voltage - VIL, VIH: 0.8V, 3V
  • Current - Peak Output (Source, Sink): 600mA, 600mA
  • Input Type: Inverting
  • High Side Voltage - Max (Bootstrap): 650V
  • Rise / Fall Time (Typ): 125ns, 50ns
  • Operating Temperature: -40°C ~ 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 44-LCC (J-Lead)
  • Supplier Device Package: 44-PLCC
封装: 44-LCC (J-Lead)
库存7,136
IXFH34N60X2A
IXYS

MOSFET N-CH 22A TO247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3230 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 540W (Tc)
  • Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247 (IXFH)
  • Package / Case: TO-247-3
封装: -
Request a Quote
IXTA52P10P-TRL
IXYS

MOSFET P-CH 100V 52A TO263

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2845 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 26A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (D2PAK)
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
封装: -
库存6,513
DMA10P1200UZ-TRL
IXYS

DIODE GEN PURP 1.2KV 10A TO252AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
  • Capacitance @ Vr, F: 1pF @ 400V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存6,519
MCNA120PD2200TB
IXYS

BIPOLAR MODULE - THYRISTOR TO-2

  • Structure: Series Connection - SCR/Diode
  • Number of SCRs, Diodes: 1 SCR, 1 Diode
  • Voltage - Off State: 2.2 kV
  • Current - On State (It (AV)) (Max): 120 A
  • Current - On State (It (RMS)) (Max): 190 A
  • Voltage - Gate Trigger (Vgt) (Max): 1.5 V
  • Current - Gate Trigger (Igt) (Max): 100 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 2200A, 2380A
  • Current - Hold (Ih) (Max): 150 mA
  • Operating Temperature: -40°C ~ 140°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: TO-240AA
封装: -
Request a Quote
IXYH55N120A4
IXYS

IGBT GENX4 1200V 55A TO247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): 175 A
  • Current - Collector Pulsed (Icm): 350 A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 55A
  • Power - Max: 650 W
  • Switching Energy: 2.3mJ (on), 5.3mJ (off)
  • Input Type: Standard
  • Gate Charge: 110 nC
  • Td (on/off) @ 25°C: 23ns/300ns
  • Test Condition: 600V, 40A, 5Ohm, 15V
  • Reverse Recovery Time (trr): 35 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
库存78
IXXH110N65B4
IXYS

DISC IGBT XPT-GENX4 TO-247AD

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 250 A
  • Current - Collector Pulsed (Icm): 570 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 110A
  • Power - Max: 880 W
  • Switching Energy: 2.2mJ (on), 1.05mJ (off)
  • Input Type: Standard
  • Gate Charge: 183 nC
  • Td (on/off) @ 25°C: 26ns/146ns
  • Test Condition: 400V, 55A, 2Ohm, 15V
  • Reverse Recovery Time (trr): 40 ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247 (IXTH)
封装: -
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R2475ZD28N
IXYS

SCR 2.8KV 4978A W46

  • Voltage - Off State: 2.8 kV
  • Voltage - Gate Trigger (Vgt) (Max): 3 V
  • Current - Gate Trigger (Igt) (Max): 300 mA
  • Voltage - On State (Vtm) (Max): 2.8 V
  • Current - On State (It (AV)) (Max): 2475 A
  • Current - On State (It (RMS)) (Max): 4978 A
  • Current - Hold (Ih) (Max): 1 A
  • Current - Off State (Max): 300 mA
  • Current - Non Rep. Surge 50, 60Hz (Itsm): 34100A @ 50Hz
  • SCR Type: Standard Recovery
  • Operating Temperature: -40°C ~ 125°C
  • Mounting Type: Chassis Mount
  • Package / Case: TO-200AF
  • Supplier Device Package: W46
封装: -
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