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IXYS |
IGBT 600V ISOPLUS247
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Current - Collector Pulsed (Icm): -
- Vce(on) (Max) @ Vge, Ic: -
- Power - Max: -
- Switching Energy: -
- Input Type: Standard
- Gate Charge: -
- Td (on/off) @ 25°C: -
- Test Condition: -
- Reverse Recovery Time (trr): -
- Operating Temperature: -
- Mounting Type: Through Hole
- Package / Case: ISOPLUS247?
- Supplier Device Package: ISOPLUS247?
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封装: ISOPLUS247? |
库存4,560 |
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IXYS |
IGBT 600V 14A 80W TO220
- IGBT Type: -
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 14A
- Current - Collector Pulsed (Icm): 56A
- Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
- Power - Max: 80W
- Switching Energy: 300µJ (off)
- Input Type: Standard
- Gate Charge: 25nC
- Td (on/off) @ 25°C: 10ns/100ns
- Test Condition: 480V, 7A, 18 Ohm, 15V
- Reverse Recovery Time (trr): 35ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存2,128 |
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IXYS |
IGBT 600V 75A 540W TO264
- IGBT Type: PT
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Current - Collector Pulsed (Icm): 400A
- Vce(on) (Max) @ Vge, Ic: 1.35V @ 15V, 60A
- Power - Max: 540W
- Switching Energy: 1.4mJ (on), 3.5mJ (off)
- Input Type: Standard
- Gate Charge: 230nC
- Td (on/off) @ 25°C: 31ns/320ns
- Test Condition: 480V, 50A, 3 Ohm, 15V
- Reverse Recovery Time (trr): 140ns
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-264-3, TO-264AA
- Supplier Device Package: TO-264 (IXGK)
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封装: TO-264-3, TO-264AA |
库存2,720 |
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IXYS |
IGBT 1700V 16A 190W TO268
- IGBT Type: NPT
- Voltage - Collector Emitter Breakdown (Max): 1700V
- Current - Collector (Ic) (Max): 16A
- Current - Collector Pulsed (Icm): 40A
- Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 11A
- Power - Max: 190W
- Switching Energy: 900µJ (off)
- Input Type: Standard
- Gate Charge: 65nC
- Td (on/off) @ 25°C: 36ns/160ns
- Test Condition: 850V, 16A, 10 Ohm, 15V
- Reverse Recovery Time (trr): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
- Supplier Device Package: TO-268
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封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA |
库存3,216 |
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IXYS |
IGBT 600V SOT-227B
- IGBT Type: -
- Configuration: Single
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): -
- Power - Max: -
- Vce(on) (Max) @ Vge, Ic: -
- Current - Collector Cutoff (Max): -
- Input Capacitance (Cies) @ Vce: -
- Input: Standard
- NTC Thermistor: No
- Operating Temperature: -
- Mounting Type: Chassis Mount
- Package / Case: SOT-227-4, miniBLOC
- Supplier Device Package: SOT-227B
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封装: SOT-227-4, miniBLOC |
库存3,888 |
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IXYS |
MODULE IGBT CBI E2
- IGBT Type: NPT
- Configuration: Three Phase Inverter with Brake
- Voltage - Collector Emitter Breakdown (Max): 600V
- Current - Collector (Ic) (Max): 75A
- Power - Max: 250W
- Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 50A
- Current - Collector Cutoff (Max): 800µA
- Input Capacitance (Cies) @ Vce: 2.8nF @ 25V
- Input: Three Phase Bridge Rectifier
- NTC Thermistor: Yes
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: E2
- Supplier Device Package: E2
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封装: E2 |
库存3,760 |
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IXYS |
MOSFET N-CH 800V 12A PLUS220-S
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PLUS-220SMD
- Package / Case: PLUS-220SMD
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封装: PLUS-220SMD |
库存6,192 |
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IXYS |
MOSFET N-CH 800V 12A PLUS220
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 800V
- Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 2800pF @ 25V
- Vgs (Max): ±30V
- FET Feature: -
- Power Dissipation (Max): 360W (Tc)
- Rds On (Max) @ Id, Vgs: 850 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS220
- Package / Case: TO-220-3, Short Tab
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封装: TO-220-3, Short Tab |
库存4,544 |
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IXYS |
MOSFET N-CH 500V 44A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 270nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 8400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 500W (Tc)
- Rds On (Max) @ Id, Vgs: 120 mOhm @ 22A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存126,828 |
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IXYS |
MOSFET N-CH 200V 170A TO-264
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 185nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 11400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 1250W (Tc)
- Rds On (Max) @ Id, Vgs: 14 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存7,600 |
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IXYS |
MOSFET N-CH 85V 180A TO-264AA
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 85V
- Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 8mA
- Gate Charge (Qg) (Max) @ Vgs: 320nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 9100pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 560W (Tc)
- Rds On (Max) @ Id, Vgs: 7 mOhm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-264AA (IXFK)
- Package / Case: TO-264-3, TO-264AA
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封装: TO-264-3, TO-264AA |
库存6,496 |
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IXYS |
MOSFET N-CH 500V 30A PLUS247
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 500V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 150nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3950pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 416W (Tc)
- Rds On (Max) @ Id, Vgs: 160 mOhm @ 15A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: PLUS247?-3
- Package / Case: TO-247-3
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封装: TO-247-3 |
库存5,456 |
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IXYS |
MOSFET N-CH 600V 20A TO-247AD
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 3.5V @ 1.1mA
- Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 1520pF @ 100V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): -
- Rds On (Max) @ Id, Vgs: 200 mOhm @ 10A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247AD (IXKH)
- Package / Case: TO-3P-3 Full Pack
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封装: TO-3P-3 Full Pack |
库存6,368 |
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IXYS |
MOSFET P-CH 150V 15A TO-263
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 150V
- Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 48nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 3650pF @ 25V
- Vgs (Max): ±15V
- FET Feature: -
- Power Dissipation (Max): 150W (Tc)
- Rds On (Max) @ Id, Vgs: 240 mOhm @ 7A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,736 |
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IXYS |
MOSFET N-CH 1200V 0.8A TO-263
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 1200V
- Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 50µA
- Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 333pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 50W (Tc)
- Rds On (Max) @ Id, Vgs: 25 Ohm @ 500mA, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263 (IXTA)
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,088 |
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IXYS |
MOSFET P-CH 200V 30A ISOPLUS247
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200V
- Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 103nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 5400pF @ 25V
- Vgs (Max): ±20V
- FET Feature: -
- Power Dissipation (Max): 190W (Tc)
- Rds On (Max) @ Id, Vgs: 93 mOhm @ 24A, 10V
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: ISOPLUS247?
- Package / Case: ISOPLUS247?
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封装: ISOPLUS247? |
库存4,624 |
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IXYS |
40V/660A TRENCHT4 PWR MOSFET SOT
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40V
- Current - Continuous Drain (Id) @ 25°C: 660A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 860nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 44000pF @ 25V
- Vgs (Max): ±15V
- FET Feature: Current Sensing
- Power Dissipation (Max): 1040W (Tc)
- Rds On (Max) @ Id, Vgs: 0.85 mOhm @ 100A, 10V
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Chassis Mount
- Supplier Device Package: SOT-227B
- Package / Case: SOT-227-4, miniBLOC
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封装: SOT-227-4, miniBLOC |
库存7,944 |
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IXYS |
MOSFET 4N-CH 100V 75A ECO-PAC2
- FET Type: 4 N-Channel (H-Bridge)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 75A
- Rds On (Max) @ Id, Vgs: 25 mOhm @ 500mA, 10V
- Vgs(th) (Max) @ Id: 4V @ 4mA
- Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 4500pF @ 25V
- Power - Max: 300W
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: ECO-PAC2
- Supplier Device Package: ECO-PAC2
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封装: ECO-PAC2 |
库存3,136 |
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IXYS |
MOD THYRISTOR/DIODE 1200V Y2-DCB
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 1200V
- Current - On State (It (AV)) (Max): 250A
- Current - On State (It (RMS)) (Max): 400A
- Voltage - Gate Trigger (Vgt) (Max): 2V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 8500A, 9000A
- Current - Hold (Ih) (Max): 150mA
- Operating Temperature: -40°C ~ 140°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y2-DCB
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封装: Y2-DCB |
库存7,584 |
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IXYS |
MOD THYRISTOR DUAL 800V TO-240AA
- Structure: Series Connection - SCR/Diode
- Number of SCRs, Diodes: 1 SCR, 1 Diode
- Voltage - Off State: 800V
- Current - On State (It (AV)) (Max): 51A
- Current - On State (It (RMS)) (Max): 80A
- Voltage - Gate Trigger (Vgt) (Max): 1.5V
- Current - Gate Trigger (Igt) (Max): 100mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 1150A, 1230A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: TO-240AA
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封装: TO-240AA |
库存2,416 |
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IXYS |
THYRISTOR MOD 1600V 2X138A
- Structure: Series Connection - All SCRs
- Number of SCRs, Diodes: 2 SCRs
- Voltage - Off State: 1600V
- Current - On State (It (AV)) (Max): 130A
- Current - On State (It (RMS)) (Max): 300A
- Voltage - Gate Trigger (Vgt) (Max): 2.5V
- Current - Gate Trigger (Igt) (Max): 150mA
- Current - Non Rep. Surge 50, 60Hz (Itsm): 4750A, 5080A
- Current - Hold (Ih) (Max): 200mA
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
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封装: Y4-M6 |
库存4,528 |
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IXYS |
DIODE GEN PURP 800V 11A DO203AA
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 800V
- Current - Average Rectified (Io): 11A
- Voltage - Forward (Vf) (Max) @ If: 1.4V @ 36A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 3mA @ 800V
- Capacitance @ Vr, F: -
- Mounting Type: Chassis, Stud Mount
- Package / Case: DO-203AA, DO-4, Stud
- Supplier Device Package: DO-203AA
- Operating Temperature - Junction: -40°C ~ 180°C
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封装: DO-203AA, DO-4, Stud |
库存5,184 |
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IXYS |
DIODE GEN PURP 1.4KV 63A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1400V
- Current - Average Rectified (Io): 63A
- Voltage - Forward (Vf) (Max) @ If: 4.1V @ 70A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 300ns
- Current - Reverse Leakage @ Vr: 2mA @ 1400V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -40°C ~ 150°C
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封装: TO-247-2 |
库存5,376 |
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IXYS |
DIODE GEN PURP 1.2KV 30A TO247AD
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1200V
- Current - Average Rectified (Io): 30A
- Voltage - Forward (Vf) (Max) @ If: 2.74V @ 30A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 40ns
- Current - Reverse Leakage @ Vr: 250µA @ 1200V
- Capacitance @ Vr, F: -
- Mounting Type: Through Hole
- Package / Case: TO-247-2
- Supplier Device Package: TO-247AD
- Operating Temperature - Junction: -55°C ~ 175°C
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封装: TO-247-2 |
库存260,736 |
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IXYS |
DIODE MODULE 1.8KV 224A Y4-M6
- Diode Configuration: 1 Pair Series Connection
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 1800V
- Current - Average Rectified (Io) (per Diode): 224A
- Voltage - Forward (Vf) (Max) @ If: 1.3V @ 300A
- Speed: Standard Recovery >500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 20mA @ 1800V
- Operating Temperature - Junction: -
- Mounting Type: Chassis Mount
- Package / Case: Y4-M6
- Supplier Device Package: Y4-M6
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封装: Y4-M6 |
库存5,536 |
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IXYS |
DIODE ARRAY GP 200V 40A TO247AD
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 200V
- Current - Average Rectified (Io) (per Diode): 40A
- Voltage - Forward (Vf) (Max) @ If: 1.22V @ 40A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35ns
- Current - Reverse Leakage @ Vr: 1µA @ 200V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-247-3
- Supplier Device Package: TO-247AD
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封装: TO-247-3 |
库存6,688 |
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IXYS |
DIODE ARRAY SCHOTTKY 15V TO220AB
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Schottky
- Voltage - DC Reverse (Vr) (Max): 15V
- Current - Average Rectified (Io) (per Diode): 20A
- Voltage - Forward (Vf) (Max) @ If: 480mV @ 20A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): -
- Current - Reverse Leakage @ Vr: 10µA @ 15V
- Operating Temperature - Junction: -55°C ~ 150°C
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220AB
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封装: TO-220-3 |
库存7,200 |
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IXYS |
DIODE ARRAY GP 400V 10A TO263
- Diode Configuration: 1 Pair Common Cathode
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 400V
- Current - Average Rectified (Io) (per Diode): 10A
- Voltage - Forward (Vf) (Max) @ If: 1.32V @ 10A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 45ns
- Current - Reverse Leakage @ Vr: 1µA @ 400V
- Operating Temperature - Junction: -55°C ~ 175°C
- Mounting Type: Surface Mount
- Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Supplier Device Package: TO-263 (D2Pak)
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封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,232 |
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IXYS |
IC CURRENT REGULATOR DPAK
- Function: Current Regulator
- Sensing Method: -
- Accuracy: -
- Voltage - Input: -
- Current - Output: 40mA
- Operating Temperature: -55°C ~ 150°C
- Mounting Type: Surface Mount
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
- Supplier Device Package: TO-252AA
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封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,336 |
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IXYS |
BREAKOVER DIODE
- Voltage - Breakover: -
- Voltage - Off State: -
- Voltage - On State: -
- Current - Peak Pulse (8/20µs): -
- Current - Peak Pulse (10/1000µs): -
- Current - Hold (Ih): 20mA
- Number of Elements: 1
- Capacitance: -
- Mounting Type: Through Hole
- Package / Case: Radial
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封装: Radial |
库存2,322 |
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