页 38 - 晶体管 - UGBT，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - UGBT，MOSFET - 单

记录 4,424
页  38/148
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Current - Collector (Ic) (Max)
Current - Collector Pulsed (Icm)
Vce(on) (Max) @ Vge, Ic
Power - Max
Switching Energy
Input Type
Gate Charge
Td (on/off) @ 25°C
Test Condition
Reverse Recovery Time (trr)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
IRGIB4607DPBF
Infineon Technologies

IGBT 600V FULLPAK220 COPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 7A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: 62µJ (on), 140µJ (off)
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack
  • Supplier Device Package: TO-220FP
封装: TO-220-3 Full Pack
库存6,880
600V
7A
-
-
-
62µJ (on), 140µJ (off)
Standard
-
-
-
-
-
Through Hole
TO-220-3 Full Pack
TO-220FP
IRGS4640DPBF
Infineon Technologies

DIODE 600V 40A D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 65A
  • Current - Collector Pulsed (Icm): 72A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 24A
  • Power - Max: 250W
  • Switching Energy: 115µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 75nC
  • Td (on/off) @ 25°C: 41ns/104ns
  • Test Condition: 400V, 24A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 89ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存7,664
600V
65A
72A
1.9V @ 15V, 24A
250W
115µJ (on), 600µJ (off)
Standard
75nC
41ns/104ns
400V, 24A, 10 Ohm, 15V
89ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot IRG4BC30W
Infineon Technologies

IGBT 600V 23A 100W TO220AB

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 23A
  • Current - Collector Pulsed (Icm): 92A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
  • Power - Max: 100W
  • Switching Energy: 130µJ (on), 130µJ (off)
  • Input Type: Standard
  • Gate Charge: 51nC
  • Td (on/off) @ 25°C: 25ns/99ns
  • Test Condition: 480V, 12A, 23 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存14,544
600V
23A
92A
2.7V @ 15V, 12A
100W
130µJ (on), 130µJ (off)
Standard
51nC
25ns/99ns
480V, 12A, 23 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
IXRR40N120
IXYS

IGBT 1200V 45A ISOPLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 45A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存2,000
1200V
45A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGR50N60A2U1
IXYS

IGBT 600V 75A 200W ISOPLUS247

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 75A
  • Current - Collector Pulsed (Icm): 200A
  • Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 50A
  • Power - Max: 200W
  • Switching Energy: 3.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 140nC
  • Td (on/off) @ 25°C: 20ns/410ns
  • Test Condition: 480V, 50A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: ISOPLUS247?
  • Supplier Device Package: ISOPLUS247?
封装: ISOPLUS247?
库存7,216
600V
75A
200A
1.7V @ 15V, 50A
200W
3.5mJ (off)
Standard
140nC
20ns/410ns
480V, 50A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
ISOPLUS247?
ISOPLUS247?
IXGQ30N60C2D4
IXYS

IGBT 600V 30A TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存4,944
600V
30A
-
-
-
-
Standard
-
-
-
-
-
Through Hole
TO-3P-3, SC-65-3
TO-3P
NGD8205NT4
ON Semiconductor

IGBT 390V 20A 125W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 390V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 50A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 4.5V, 20A
  • Power - Max: 125W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: -
  • Td (on/off) @ 25°C: -/5µs
  • Test Condition: 300V, 9A, 1 kOhm, 5V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,040
390V
20A
50A
1.9V @ 4.5V, 20A
125W
-
Logic
-
-/5µs
300V, 9A, 1 kOhm, 5V
-
-55°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
SGH40N60UFDM1TU
Fairchild/ON Semiconductor

IGBT 600V 40A 160W TO3P

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 40A
  • Current - Collector Pulsed (Icm): 160A
  • Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 20A
  • Power - Max: 160W
  • Switching Energy: 160µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 97nC
  • Td (on/off) @ 25°C: 15ns/65ns
  • Test Condition: 300V, 20A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): 60ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
封装: TO-3P-3, SC-65-3
库存3,392
600V
40A
160A
2.6V @ 15V, 20A
160W
160µJ (on), 200µJ (off)
Standard
97nC
15ns/65ns
300V, 20A, 10 Ohm, 15V
60ns
-55°C ~ 150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3PN
IXBX75N170A
IXYS

IGBT 1700V 110A 1040W PLUS247

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 110A
  • Current - Collector Pulsed (Icm): 300A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 42A
  • Power - Max: 1040W
  • Switching Energy: 3.8mJ (off)
  • Input Type: Standard
  • Gate Charge: 358nC
  • Td (on/off) @ 25°C: 26ns/418ns
  • Test Condition: 1360V, 42A, 1 Ohm, 15V
  • Reverse Recovery Time (trr): 360ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: PLUS247?-3
封装: TO-247-3
库存7,024
1700V
110A
300A
6V @ 15V, 42A
1040W
3.8mJ (off)
Standard
358nC
26ns/418ns
1360V, 42A, 1 Ohm, 15V
360ns
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
PLUS247?-3
hot APT65GP60L2DQ2G
Microsemi Corporation

IGBT 600V 198A 833W TO264

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 198A
  • Current - Collector Pulsed (Icm): 250A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 65A
  • Power - Max: 833W
  • Switching Energy: 605µJ (on), 895µJ (off)
  • Input Type: Standard
  • Gate Charge: 210nC
  • Td (on/off) @ 25°C: 30ns/90ns
  • Test Condition: 400V, 65A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-264-3, TO-264AA
  • Supplier Device Package: -
封装: TO-264-3, TO-264AA
库存17,748
600V
198A
250A
2.7V @ 15V, 65A
833W
605µJ (on), 895µJ (off)
Standard
210nC
30ns/90ns
400V, 65A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-264-3, TO-264AA
-
IXGT32N170A
IXYS

IGBT 1700V 32A 350W TO268

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 32A
  • Current - Collector Pulsed (Icm): 110A
  • Vce(on) (Max) @ Vge, Ic: 5V @ 15V, 21A
  • Power - Max: 350W
  • Switching Energy: 1.5mJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 46ns/260ns
  • Test Condition: 850V, 32A, 2.7 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
  • Supplier Device Package: TO-268
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存4,976
1700V
32A
110A
5V @ 15V, 21A
350W
1.5mJ (off)
Standard
155nC
46ns/260ns
850V, 32A, 2.7 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
TO-268
APT25GN120B2DQ2G
Microsemi Corporation

IGBT 1200V 67A 272W TMAX

  • IGBT Type: NPT, Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 67A
  • Current - Collector Pulsed (Icm): 75A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 272W
  • Switching Energy: 2.15µJ (off)
  • Input Type: Standard
  • Gate Charge: 155nC
  • Td (on/off) @ 25°C: 22ns/280ns
  • Test Condition: 800V, 25A, 4.3 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3 Variant
  • Supplier Device Package: -
封装: TO-247-3 Variant
库存5,248
1200V
67A
75A
2.1V @ 15V, 25A
272W
2.15µJ (off)
Standard
155nC
22ns/280ns
800V, 25A, 4.3 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3 Variant
-
hot IXGH10N170A
IXYS

IGBT 1700V 10A 140W TO247

  • IGBT Type: NPT
  • Voltage - Collector Emitter Breakdown (Max): 1700V
  • Current - Collector (Ic) (Max): 10A
  • Current - Collector Pulsed (Icm): 20A
  • Vce(on) (Max) @ Vge, Ic: 6V @ 15V, 5A
  • Power - Max: 140W
  • Switching Energy: 380µJ (off)
  • Input Type: Standard
  • Gate Charge: 29nC
  • Td (on/off) @ 25°C: 46ns/190ns
  • Test Condition: 850V, 10A, 22 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247AD (IXGH)
封装: TO-247-3
库存92,916
1700V
10A
20A
6V @ 15V, 5A
140W
380µJ (off)
Standard
29nC
46ns/190ns
850V, 10A, 22 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247AD (IXGH)
hot IXGA24N120C3
IXYS

IGBT 1200V 48A 250W TO263

  • IGBT Type: PT
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 48A
  • Current - Collector Pulsed (Icm): 96A
  • Vce(on) (Max) @ Vge, Ic: 4.2V @ 15V, 20A
  • Power - Max: 250W
  • Switching Energy: 1.16mJ (on), 470µJ (off)
  • Input Type: Standard
  • Gate Charge: 79nC
  • Td (on/off) @ 25°C: 16ns/93ns
  • Test Condition: 600V, 20A, 5 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,520
1200V
48A
96A
4.2V @ 15V, 20A
250W
1.16mJ (on), 470µJ (off)
Standard
79nC
16ns/93ns
600V, 20A, 5 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
IXGA4N100
IXYS

IGBT 1000V 8A 40W TO263AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1000V
  • Current - Collector (Ic) (Max): 8A
  • Current - Collector Pulsed (Icm): 16A
  • Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 4A
  • Power - Max: 40W
  • Switching Energy: 900µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 20ns/390ns
  • Test Condition: 800V, 4A, 120 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (IXGA)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,432
1000V
8A
16A
2.7V @ 15V, 4A
40W
900µJ (off)
Standard
13.6nC
20ns/390ns
800V, 4A, 120 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (IXGA)
HGTD7N60C3S9A
Fairchild/ON Semiconductor

IGBT 600V 14A 60W TO252AA

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 56A
  • Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 7A
  • Power - Max: 60W
  • Switching Energy: 165µJ (on), 600µJ (off)
  • Input Type: Standard
  • Gate Charge: 23nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252AA
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存2,112
600V
14A
56A
2V @ 15V, 7A
60W
165µJ (on), 600µJ (off)
Standard
23nC
-
-
-
-40°C ~ 150°C (TJ)
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
AOTF15B65M2
Alpha & Omega Semiconductor Inc.

IGBT 650V 15A TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 650V
  • Current - Collector (Ic) (Max): 30A
  • Current - Collector Pulsed (Icm): 45A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
  • Power - Max: 36W
  • Switching Energy: 290µJ (on), 200µJ (off)
  • Input Type: Standard
  • Gate Charge: 32nC
  • Td (on/off) @ 25°C: 15ns/94ns
  • Test Condition: 400V, 15A, 20 Ohm, 15V
  • Reverse Recovery Time (trr): 298ns
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存13,722
650V
30A
45A
2.15V @ 15V, 15A
36W
290µJ (on), 200µJ (off)
Standard
32nC
15ns/94ns
400V, 15A, 20 Ohm, 15V
298ns
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220
STGB7H60DF
STMicroelectronics

IGBT 600V 14A 88W D2PAK

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 14A
  • Current - Collector Pulsed (Icm): 28A
  • Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 7A
  • Power - Max: 88W
  • Switching Energy: 99µJ (on), 100µJ (off)
  • Input Type: Standard
  • Gate Charge: 46nC
  • Td (on/off) @ 25°C: 30ns/160ns
  • Test Condition: 400V, 7A, 47 Ohm, 15V
  • Reverse Recovery Time (trr): 136ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存2,272
600V
14A
28A
1.95V @ 15V, 7A
88W
99µJ (on), 100µJ (off)
Standard
46nC
30ns/160ns
400V, 7A, 47 Ohm, 15V
136ns
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
STGB6NC60HT4
STMicroelectronics

IGBT 600V 15A 56W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 15A
  • Current - Collector Pulsed (Icm): 21A
  • Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 3A
  • Power - Max: 56W
  • Switching Energy: 20µJ (on), 68µJ (off)
  • Input Type: Standard
  • Gate Charge: 13.6nC
  • Td (on/off) @ 25°C: 12ns/76ns
  • Test Condition: 390V, 3A, 10 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存13,986
600V
15A
21A
2.5V @ 15V, 3A
56W
20µJ (on), 68µJ (off)
Standard
13.6nC
12ns/76ns
390V, 3A, 10 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
hot AOT10B60D
Alpha & Omega Semiconductor Inc.

IGBT 600V 20A 163W TO220

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 20A
  • Current - Collector Pulsed (Icm): 40A
  • Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A
  • Power - Max: 163W
  • Switching Energy: 260µJ (on), 70µJ (off)
  • Input Type: Standard
  • Gate Charge: 17.4nC
  • Td (on/off) @ 25°C: 10ns/72ns
  • Test Condition: 400V, 10A, 30 Ohm, 15V
  • Reverse Recovery Time (trr): 105ns
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220
封装: TO-220-3
库存45,444
600V
20A
40A
1.8V @ 15V, 10A
163W
260µJ (on), 70µJ (off)
Standard
17.4nC
10ns/72ns
400V, 10A, 30 Ohm, 15V
105ns
-55°C ~ 175°C (TJ)
Through Hole
TO-220-3
TO-220
FGD3N60LSDTM
Fairchild/ON Semiconductor

IGBT 600V 6A 40W DPAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 600V
  • Current - Collector (Ic) (Max): 6A
  • Current - Collector Pulsed (Icm): 25A
  • Vce(on) (Max) @ Vge, Ic: 1.5V @ 10V, 3A
  • Power - Max: 40W
  • Switching Energy: 250µJ (on), 1mJ (off)
  • Input Type: Standard
  • Gate Charge: 12.5nC
  • Td (on/off) @ 25°C: 40ns/600ns
  • Test Condition: 480V, 3A, 470 Ohm, 10V
  • Reverse Recovery Time (trr): 234ns
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: D-Pak
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存7,248
600V
6A
25A
1.5V @ 10V, 3A
40W
250µJ (on), 1mJ (off)
Standard
12.5nC
40ns/600ns
480V, 3A, 470 Ohm, 10V
234ns
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
D-Pak
hot IRG4BH20K-SPBF
Infineon Technologies

IGBT 1200V 11A 60W D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 1200V
  • Current - Collector (Ic) (Max): 11A
  • Current - Collector Pulsed (Icm): 22A
  • Vce(on) (Max) @ Vge, Ic: 4.3V @ 15V, 5A
  • Power - Max: 60W
  • Switching Energy: 450µJ (on), 440µJ (off)
  • Input Type: Standard
  • Gate Charge: 28nC
  • Td (on/off) @ 25°C: 23ns/93ns
  • Test Condition: 960V, 5A, 50 Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,648
1200V
11A
22A
4.3V @ 15V, 5A
60W
450µJ (on), 440µJ (off)
Standard
28nC
23ns/93ns
960V, 5A, 50 Ohm, 15V
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
RGSX5TS65HRC11
Rohm Semiconductor

IGBT TRENCH FLD 650V 114A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 114 A
  • Current - Collector Pulsed (Icm): 225 A
  • Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
  • Power - Max: 404 W
  • Switching Energy: 3.32mJ (on), 1.9mJ (off)
  • Input Type: Standard
  • Gate Charge: 79 nC
  • Td (on/off) @ 25°C: 43ns/113ns
  • Test Condition: 400V, 75A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
库存1,185
650 V
114 A
225 A
2.15V @ 15V, 75A
404 W
3.32mJ (on), 1.9mJ (off)
Standard
79 nC
43ns/113ns
400V, 75A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGW00TS65GC11
Rohm Semiconductor

IGBT TRNCH FIELD 650V 96A TO247N

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 96 A
  • Current - Collector Pulsed (Icm): 200 A
  • Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
  • Power - Max: 254 W
  • Switching Energy: 1.18mJ (on), 960µJ (off)
  • Input Type: Standard
  • Gate Charge: 141 nC
  • Td (on/off) @ 25°C: 52ns/180ns
  • Test Condition: 400V, 50A, 10Ohm, 15V
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247N
封装: -
Request a Quote
650 V
96 A
200 A
1.9V @ 15V, 50A
254 W
1.18mJ (on), 960µJ (off)
Standard
141 nC
52ns/180ns
400V, 50A, 10Ohm, 15V
-
-40°C ~ 175°C (TJ)
Through Hole
TO-247-3
TO-247N
RGS50NL65DHRBTL
Rohm Semiconductor

IGBT TRENCH FS 650V 50A TO263L

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 650 V
  • Current - Collector (Ic) (Max): 50 A
  • Current - Collector Pulsed (Icm): 75 A
  • Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
  • Power - Max: 206 W
  • Switching Energy: 810µJ (on), 650µJ (off)
  • Input Type: Standard
  • Gate Charge: 31 nC
  • Td (on/off) @ 25°C: 28ns/91ns
  • Test Condition: 400V, 25A, 10Ohm, 15V
  • Reverse Recovery Time (trr): 95 ns
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263L
封装: -
Request a Quote
650 V
50 A
75 A
2.1V @ 15V, 25A
206 W
810µJ (on), 650µJ (off)
Standard
31 nC
28ns/91ns
400V, 25A, 10Ohm, 15V
95 ns
-40°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263L
ISL9V3040S3ST-F085C
onsemi

ECOSPARK1 IGN-IGBT TO263

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Current - Collector (Ic) (Max): 21 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.65V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 17 nC
  • Td (on/off) @ 25°C: 700ns/4.8µs
  • Test Condition: 14V, 1Ohm
  • Reverse Recovery Time (trr): 2.1 µs
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2PAK)
封装: -
Request a Quote
400 V
21 A
-
1.65V @ 4V, 6A
150 W
-
Logic
17 nC
700ns/4.8µs
14V, 1Ohm
2.1 µs
-55°C ~ 175°C (TJ)
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
TO-263 (D2PAK)
IGC50T120T8RQX1SA1
Infineon Technologies

IGBT 1200V 50A DIE

  • IGBT Type: Trench Field Stop
  • Voltage - Collector Emitter Breakdown (Max): 1200 V
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): 150 A
  • Vce(on) (Max) @ Vge, Ic: 2.42V @ 15V, 50A
  • Power - Max: -
  • Switching Energy: -
  • Input Type: Standard
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
Request a Quote
1200 V
-
150 A
2.42V @ 15V, 50A
-
-
Standard
-
-
-
-
-
Surface Mount
Die
Die
XGB8206ATI
Littelfuse Inc.

IGBT N-CH 20A 350V D2PAK

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
FGD3050G2
onsemi

IGBT 500V 32A TO252

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): 500 V
  • Current - Collector (Ic) (Max): 32 A
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
  • Power - Max: 150 W
  • Switching Energy: -
  • Input Type: Logic
  • Gate Charge: 22 nC
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -40°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: TO-252 (DPAK)
封装: -
库存8,328
500 V
32 A
-
1.2V @ 4V, 6A
150 W
-
Logic
22 nC
-
-
-
-40°C ~ 175°C (TJ)
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
TO-252 (DPAK)
BSM300GA160DN13CB7HOSA1
Infineon Technologies

BSM300GA160 - INSULATED GATE BIP

  • IGBT Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Current - Collector (Ic) (Max): -
  • Current - Collector Pulsed (Icm): -
  • Vce(on) (Max) @ Vge, Ic: -
  • Power - Max: -
  • Switching Energy: -
  • Input Type: -
  • Gate Charge: -
  • Td (on/off) @ 25°C: -
  • Test Condition: -
  • Reverse Recovery Time (trr): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-