页 90 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

IPP80N04S2L03AKSA1

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 213nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6000pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存5,648

MOSFET (Metal Oxide)

40V

80A (Tc)

4.5V, 10V

2V @ 250µA

213nC @ 10V

6000pF @ 25V

±20V

-

300W (Tc)

3.4 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

BSC085N025S G

Infineon Technologies

MOSFET N-CH 25V 35A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 35A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 8.5 mOhm @ 35A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存3,920

MOSFET (Metal Oxide)

25V

14A (Ta), 35A (Tc)

4.5V, 10V

2V @ 25µA

14nC @ 5V

1800pF @ 15V

±20V

-

2.8W (Ta), 52W (Tc)

8.5 mOhm @ 35A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

BSC024N025S G

Infineon Technologies

MOSFET N-CH 25V 100A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 52nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 6530pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存7,600

MOSFET (Metal Oxide)

25V

27A (Ta), 100A (Tc)

4.5V, 10V

2V @ 90µA

52nC @ 5V

6530pF @ 15V

±20V

-

2.8W (Ta), 89W (Tc)

2.4 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

BSL207SP

Infineon Technologies

MOSFET P-CH 20V 6A 6-TSOP

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 40µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1007pF @ 15V
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 41 mOhm @ 6A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TSOP6-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存434,928

MOSFET (Metal Oxide)

20V

6A (Ta)

2.5V, 4.5V

1.2V @ 40µA

20nC @ 4.5V

1007pF @ 15V

±12V

-

2W (Ta)

41 mOhm @ 6A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TSOP6-6

SOT-23-6 Thin, TSOT-23-6

SPP80P06PBKSA1

Infineon Technologies

MOSFET P-CH 60V 80A TO-220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 5.5mA
Gate Charge (Qg) (Max) @ Vgs: 173nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5033pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 340W (Tc)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 64A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存5,168

MOSFET (Metal Oxide)

60V

80A (Tc)

10V

4V @ 5.5mA

173nC @ 10V

5033pF @ 25V

±20V

-

340W (Tc)

23 mOhm @ 64A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

AOL1432A

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 25V 12A 8ULTRASO

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 44A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1450pF @ 12.5V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.1W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 7.5 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: UltraSO-8?
Package / Case: 3-PowerSMD, Flat Leads

封装: 3-PowerSMD, Flat Leads

库存426,000

MOSFET (Metal Oxide)

25V

12A (Ta), 44A (Tc)

4.5V, 10V

3V @ 250µA

26nC @ 10V

1450pF @ 12.5V

±20V

-

2.1W (Ta), 30W (Tc)

7.5 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

UltraSO-8?

3-PowerSMD, Flat Leads

STD70NH02LT4

STMicroelectronics

MOSFET N-CH 24V 60A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 24V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2050pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 70W (Tc)
Rds On (Max) @ Id, Vgs: 8 mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存324,612

MOSFET (Metal Oxide)

24V

60A (Tc)

5V, 10V

1.8V @ 250µA

22nC @ 10V

2050pF @ 25V

±20V

-

70W (Tc)

8 mOhm @ 30A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

IPP60R520C6

Infineon Technologies

MOSFET N-CH 600V 8.1A TO220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 230µA
Gate Charge (Qg) (Max) @ Vgs: 23.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 512pF @ 100V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 520 mOhm @ 2.8A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO-220-3
Package / Case: TO-220-3

封装: TO-220-3

库存7,696

MOSFET (Metal Oxide)

600V

8.1A (Tc)

10V

3.5V @ 230µA

23.4nC @ 10V

512pF @ 100V

±20V

-

66W (Tc)

520 mOhm @ 2.8A, 10V

-55°C ~ 150°C (TJ)

Through Hole

PG-TO-220-3

TO-220-3

IXTX4N300P3HV

IXYS

2000V TO 3000V POLAR3 POWER MOSF

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 3000V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 139nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3680pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960W (Tc)
Rds On (Max) @ Id, Vgs: 12.5 Ohm @ 2A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247HV
Package / Case: TO-247-3 Variant

封装: TO-247-3 Variant

库存6,544

MOSFET (Metal Oxide)

3000V

4A (Tc)

10V

5V @ 250µA

139nC @ 10V

3680pF @ 25V

±20V

-

960W (Tc)

12.5 Ohm @ 2A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247HV

TO-247-3 Variant

IXFE80N50

IXYS

MOSFET N-CH 500V 72A SOT-227B

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 500V
Current - Continuous Drain (Id) @ 25°C: 72A
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 8mA
Gate Charge (Qg) (Max) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 9890pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 580W (Tc)
Rds On (Max) @ Id, Vgs: 55 mOhm @ 40A, 10V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Supplier Device Package: SOT-227B
Package / Case: SOT-227-4, miniBLOC

封装: SOT-227-4, miniBLOC

库存5,424

MOSFET (Metal Oxide)

500V

72A

10V

4.5V @ 8mA

380nC @ 10V

9890pF @ 25V

±20V

-

580W (Tc)

55 mOhm @ 40A, 10V

-40°C ~ 150°C (TJ)

Chassis Mount

SOT-227B

SOT-227-4, miniBLOC

IXFH15N80

IXYS

MOSFET N-CH 800V 15A TO-247AD

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4870pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 600 mOhm @ 7.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AD (IXFH)
Package / Case: TO-247-3

封装: TO-247-3

库存4,928

MOSFET (Metal Oxide)

800V

15A (Tc)

10V

4.5V @ 4mA

200nC @ 10V

4870pF @ 25V

±20V

-

300W (Tc)

600 mOhm @ 7.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-247AD (IXFH)

TO-247-3

IXFP7N80P

IXYS

MOSFET N-CH 800V 7A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 800V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1890pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 200W (Tc)
Rds On (Max) @ Id, Vgs: 1.44 Ohm @ 3.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存2,080

MOSFET (Metal Oxide)

800V

7A (Tc)

10V

5V @ 1mA

32nC @ 10V

1890pF @ 25V

±30V

-

200W (Tc)

1.44 Ohm @ 3.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

FDC30N20DZ

Fairchild/ON Semiconductor

PT8 30/20 WITH ZENER IN SSOT6 DU

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.9nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 960mW (Ta)
Rds On (Max) @ Id, Vgs: 31 mOhm @ 4.6A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23-6
Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

库存3,008

MOSFET (Metal Oxide)

30V

4.6A (Ta)

4.5V, 10V

3V @ 250µA

7.9nC @ 10V

535pF @ 15V

±20V

-

960mW (Ta)

31 mOhm @ 4.6A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6

SOT-23-6 Thin, TSOT-23-6

NTTFS5C454NLTAG

ON Semiconductor

MOSFET N-CH 40V 20A WDFN8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 85A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 45µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.2W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 3.8 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-WDFN (3.3x3.3)
Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

库存7,472

MOSFET (Metal Oxide)

40V

20A (Ta), 85A (Tc)

4.5V, 10V

2V @ 45µA

18nC @ 10V

1600pF @ 25V

±20V

-

3.2W (Ta), 55W (Tc)

3.8 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-WDFN (3.3x3.3)

8-PowerWDFN

SQJQ410EL-T1_GE3

Vishay Siliconix

MOSFET N-CH 40V 200A PWRPAK 8X8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 14500pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 150W (Tc)
Rds On (Max) @ Id, Vgs: 1.2 mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK? 8 x 8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存6,384

MOSFET (Metal Oxide)

40V

200A (Tc)

4.5V, 10V

2.5V @ 250µA

220nC @ 10V

14500pF @ 25V

±20V

-

150W (Tc)

1.2 mOhm @ 20A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK? 8 x 8

8-PowerTDFN

FDU7N60NZTU

Fairchild/ON Semiconductor

MOSFET N-CH 600V SGL IPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 600V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 730pF @ 25V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 1.25 Ohm @ 2.75A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: I-Pak
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

库存34,068

MOSFET (Metal Oxide)

600V

5.5A (Tc)

10V

5V @ 250µA

17nC @ 10V

730pF @ 25V

±25V

-

90W (Tc)

1.25 Ohm @ 2.75A, 10V

-55°C ~ 150°C (TJ)

Through Hole

I-Pak

TO-251-3 Short Leads, IPak, TO-251AA

SI4172DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 15A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 4.5W (Tc)
Rds On (Max) @ Id, Vgs: 12 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存5,407,692

MOSFET (Metal Oxide)

30V

15A (Tc)

4.5V, 10V

2.5V @ 250µA

23nC @ 10V

820pF @ 15V

±20V

-

2.5W (Ta), 4.5W (Tc)

12 mOhm @ 11A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

PCP1403-TD-H

ON Semiconductor

MOSFET N-CH 60V 4.5A SOT89

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 20V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 3.5W (Tc)
Rds On (Max) @ Id, Vgs: 117 mOhm @ 2A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-89/PCP-1
Package / Case: TO-243AA

封装: TO-243AA

库存24,000

MOSFET (Metal Oxide)

60V

4.5A (Ta)

4V, 10V

2.6V @ 1mA

6.7nC @ 10V

310pF @ 20V

±20V

-

3.5W (Tc)

117 mOhm @ 2A, 10V

150°C (TJ)

Surface Mount

SOT-89/PCP-1

TO-243AA

STB35N65M5

STMicroelectronics

MOSFET N-CH 650V 27A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 83nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 3750pF @ 100V
Vgs (Max): ±25V
FET Feature: -
Power Dissipation (Max): 160W (Tc)
Rds On (Max) @ Id, Vgs: 98 mOhm @ 13.5A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,000

MOSFET (Metal Oxide)

650V

27A (Tc)

10V

5V @ 250µA

83nC @ 10V

3750pF @ 100V

±25V

-

160W (Tc)

98 mOhm @ 13.5A, 10V

150°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

ZXMP2120G4TA

Diodes Incorporated

MOSFET P-CH 200V 0.2A SOT-223

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 25 Ohm @ 150mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-223
Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

库存729,900

MOSFET (Metal Oxide)

200V

200mA (Ta)

10V

3.5V @ 1mA

-

100pF @ 25V

±20V

-

2W (Ta)

25 Ohm @ 150mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-223

TO-261-4, TO-261AA

BSC014N06NSATMA1

Infineon Technologies

MOSFET N-CH 60V 30A TDSON-8

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs(th) (Max) @ Id: 2.8V @ 120µA
Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 1.45 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8
Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

库存236,502

MOSFET (Metal Oxide)

60V

30A (Ta), 100A (Tc)

6V, 10V

2.8V @ 120µA

89nC @ 10V

6500pF @ 30V

±20V

-

2.5W (Ta), 156W (Tc)

1.45 mOhm @ 50A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8

8-PowerTDFN

GT100N04D3

Goford Semiconductor

N40V, 13A,RD<10M@10V,VTH1.0V~2.5

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 642 pF @ 20 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 23W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN (3.15x3.05)
Package / Case: 8-PowerVDFN

封装: -

库存13,827

MOSFET (Metal Oxide)

40 V

13A (Tc)

4.5V, 10V

2.5V @ 250µA

32 nC @ 10 V

642 pF @ 20 V

±20V

-

23W (Tc)

10mOhm @ 5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN (3.15x3.05)

8-PowerVDFN

2SK3615-TL-E

onsemi

N-CHANNEL SILICON MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

CMS3401-HF

Comchip Technology

MOSFET P-CH 30V SOT23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

BSC018NE2LSIATMA1

Infineon Technologies

MOSFET N-CH 25V 29A/100A TDSON

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 25 V
Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 12 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TDSON-8-6
Package / Case: 8-PowerTDFN

封装: -

库存27,750

MOSFET (Metal Oxide)

25 V

29A (Ta), 100A (Tc)

4.5V, 10V

2V @ 250µA

36 nC @ 10 V

2500 pF @ 12 V

±20V

-

2.5W (Ta), 69W (Tc)

1.8mOhm @ 30A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-TDSON-8-6

8-PowerTDFN

AUXYBFP3306

Infineon Technologies

MOSFET N-CH 60V TO-247AC

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

NTD70N03R-1

onsemi

N-CHANNEL POWER MOSFET

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-

AONR36366

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 30A/34A 8DFN

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30 V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1835 pF @ 15 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 5W (Ta), 28W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-DFN-EP (3x3)
Package / Case: 8-PowerVDFN

封装: -

库存32,028

MOSFET (Metal Oxide)

30 V

30A (Ta), 34A (Tc)

4.5V, 10V

2.1V @ 250µA

35 nC @ 10 V

1835 pF @ 15 V

±20V

-

5W (Ta), 28W (Tc)

3.5mOhm @ 20A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-DFN-EP (3x3)

8-PowerVDFN

SQJ418EP-T1_BE3

Vishay Siliconix

N-CHANNEL 100-V (D-S) 175C MOSFE

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 68W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PowerPAK® SO-8
Package / Case: PowerPAK® SO-8

封装: -

库存27,000

MOSFET (Metal Oxide)

100 V

48A (Tc)

10V

3.5V @ 250µA

35 nC @ 10 V

1700 pF @ 25 V

±20V

-

68W (Tc)

14mOhm @ 10A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PowerPAK® SO-8

PA503EMG-ML

MOSLEADER

Single P -30V -2.2A SOT-23

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

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