图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 30A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存2,416 |
|
MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 4V @ 250µA | 110nC @ 10V | 2430pF @ 25V | ±20V | - | 110W (Tc) | 16 mOhm @ 34A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D-PAK (TO-252AA) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 55V 80A TO263-3
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存6,480 |
|
MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4V @ 125µA | 80nC @ 10V | 2360pF @ 25V | ±20V | - | 190W (Tc) | 8.8 mOhm @ 50A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 55V 53A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存2,944 |
|
MOSFET (Metal Oxide) | 55V | 53A (Tc) | 10V | 4V @ 250µA | 72nC @ 10V | 1696pF @ 25V | ±20V | - | 3.8W (Ta), 107W (Tc) | 16.5 mOhm @ 28A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 60V 2.9A SOT-223
|
封装: TO-261-4, TO-261AA |
库存691,068 |
|
MOSFET (Metal Oxide) | 60V | 2.9A (Ta) | 10V | 4V @ 1mA | 33nC @ 10V | 875pF @ 25V | ±20V | - | 1.8W (Ta) | 130 mOhm @ 2.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 55V 49A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存16,572 |
|
MOSFET (Metal Oxide) | 55V | 49A (Tc) | 10V | 4V @ 250µA | 63nC @ 10V | 1470pF @ 25V | ±20V | - | 3.8W (Ta), 94W (Tc) | 17.5 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET P-CH 20V 5.1A FLIP-FET
|
封装: 4-FlipFet? |
库存1,387,452 |
|
MOSFET (Metal Oxide) | 20V | 5.1A (Ta) | 2.5V, 4.5V | 1.2V @ 250µA | 21nC @ 5V | 1230pF @ 15V | ±12V | - | 2.2W (Ta) | 65 mOhm @ 5.1A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 4-FlipFet? | 4-FlipFet? |
||
Infineon Technologies |
MOSFET N-CH 100V 17A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存4,832 |
|
MOSFET (Metal Oxide) | 100V | 17A (Tc) | 4V, 10V | 2V @ 250µA | 34nC @ 5V | 800pF @ 25V | ±20V | - | 3.8W (Ta), 79W (Tc) | 100 mOhm @ 9A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 5.1A 6TSOP
|
封装: SC-74, SOT-457 |
库存2,672 |
|
MOSFET (Metal Oxide) | 30V | 5.1A (Ta) | 4.5V, 10V | 2.5V @ 250µA | 9.3nC @ 10V | 334pF @ 15V | ±20V | - | 500mW (Ta) | 31 mOhm @ 5.1A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 6-TSOP | SC-74, SOT-457 |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 20V 8A 6LDFN
|
封装: 6-UDFN Exposed Pad |
库存27,000 |
|
MOSFET (Metal Oxide) | 20V | 8A (Ta) | 1.5V, 4.5V | 1V @ 250µA | 18nC @ 4.5V | 1140pF @ 10V | ±8V | - | 2.8W (Ta) | 12.5 mOhm @ 8A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 6-DFN-EP (2x2) | 6-UDFN Exposed Pad |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 400V 1.56A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,368 |
|
MOSFET (Metal Oxide) | 400V | 1.56A (Tc) | 10V | 5V @ 250µA | 13nC @ 10V | 350pF @ 25V | ±30V | - | 2.5W (Ta), 38W (Tc) | 6.5 Ohm @ 780mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
IXYS |
MOSFET N-CH 500V 22A PLUS220-SMD
|
封装: PLUS-220SMD |
库存2,544 |
|
MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 5.5V @ 2.5mA | 50nC @ 10V | 2630pF @ 25V | ±30V | - | 350W (Tc) | 270 mOhm @ 11A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PLUS-220SMD | PLUS-220SMD |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 18A TO-220AB
|
封装: TO-220-3 |
库存4,544 |
|
MOSFET (Metal Oxide) | 60V | 18A (Tc) | 4.5V, 10V | 3V @ 250µA | 15nC @ 10V | 485pF @ 25V | ±16V | - | 49W (Tc) | 62 mOhm @ 18A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Diodes Incorporated |
MOSFET N-CH 450V 0.09A TO92-3
|
封装: E-Line-3 |
库存5,344 |
|
MOSFET (Metal Oxide) | 450V | 90mA (Ta) | 10V | 3V @ 1mA | - | 70pF @ 25V | ±20V | - | 700mW (Ta) | 50 Ohm @ 100mA, 10V | -55°C ~ 150°C (TJ) | Through Hole | E-Line (TO-92 compatible) | E-Line-3 |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 250V 4A 8-SOPA
|
封装: 8-PowerVDFN |
库存6,416 |
|
MOSFET (Metal Oxide) | 250V | 4A (Ta) | 10V | 4V @ 1mA | 10nC @ 10V | 600pF @ 10V | ±20V | - | 1.6W (Ta), 45W (Tc) | 580 mOhm @ 2A, 10V | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
||
Vishay Siliconix |
MOSFET P-CH 100V 3.1A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存6,960 |
|
MOSFET (Metal Oxide) | 100V | 3.1A (Tc) | 10V | 4V @ 250µA | 8.7nC @ 10V | 200pF @ 25V | ±20V | - | 2.5W (Ta), 25W (Tc) | 1.2 Ohm @ 1.9A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Infineon Technologies |
MOSFET N-CH 600V 35A TO247-4
|
封装: TO-247-4 |
库存3,056 |
|
MOSFET (Metal Oxide) | 600V | 35A (Tc) | 10V | 4V @ 800µA | 68nC @ 10V | 2850pF @ 400V | ±20V | - | 162W (Tc) | 60 mOhm @ 15.9A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO247-4 | TO-247-4 |
||
Infineon Technologies |
MOSFET N-CH 550V 13A TO-263
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存3,296 |
|
MOSFET (Metal Oxide) | 550V | 13A (Tc) | 10V | 3.5V @ 520µA | 36nC @ 10V | 1420pF @ 100V | ±20V | - | 114W (Tc) | 250 mOhm @ 7.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
CONSUMER
|
封装: - |
库存7,040 |
|
- | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
||
Microsemi Corporation |
MOSFET N-CH 1000V 45A SOT-227
|
封装: SOT-227-4, miniBLOC |
库存7,024 |
|
MOSFET (Metal Oxide) | 1000V | 45A | 10V | 5V @ 2.5mA | 570nC @ 10V | 18500pF @ 25V | ±30V | - | 960W (Tc) | 180 mOhm @ 33A, 10V | -55°C ~ 150°C (TJ) | Chassis Mount | SOT-227 | SOT-227-4, miniBLOC |
||
Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5A TO-220SIS
|
封装: TO-220-3 Full Pack |
库存3,024 |
|
MOSFET (Metal Oxide) | 650V | 5A (Ta) | 10V | 4V @ 1mA | 16nC @ 10V | 800pF @ 25V | ±30V | - | 40W (Tc) | 1.43 Ohm @ 2.5A, 10V | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
||
Vishay Siliconix |
MOSFET P-CH 20V 10A 8-SOIC
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存3,008 |
|
MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.8V, 4.5V | 900mV @ 600µA | 175nC @ 5V | - | ±8V | - | 1.5W (Ta) | 7.5 mOhm @ 14A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Vishay Siliconix |
MOSFET N-CH 30V 11.3A 1212-8
|
封装: PowerPAK? 1212-8 |
库存168,492 |
|
MOSFET (Metal Oxide) | 30V | 11.3A (Tc) | 4.5V, 10V | 1.5V @ 250µA | 27nC @ 4.5V | 2610pF @ 15V | ±12V | - | 1.5W (Ta) | 7.5 mOhm @ 17.8A, 10V | -50°C ~ 150°C (TJ) | Surface Mount | PowerPAK? 1212-8 | PowerPAK? 1212-8 |
||
EPC |
TRANS GAN 200V 31A BUMPED DIE
|
封装: Die |
库存27,486 |
|
GaNFET (Gallium Nitride) | 200V | 31A (Ta) | 5V | 2.5V @ 7mA | 8.5nC @ 5V | 940pF @ 100V | +6V, -4V | - | - | 10 mOhm @ 20A, 5V | -40°C ~ 150°C (TJ) | Surface Mount | Die | Die |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 80V 12.9A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,088 |
|
MOSFET (Metal Oxide) | 80V | 12.9A (Tc) | 5V, 10V | 2V @ 250µA | 11.5nC @ 5V | 520pF @ 25V | ±20V | - | 2.5W (Ta), 40W (Tc) | 100 mOhm @ 6.45A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | TO-252, (D-Pak) | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 30V 21A POWER56
|
封装: 8-PowerTDFN |
库存618,504 |
|
MOSFET (Metal Oxide) | 30V | 21A (Ta), 42A (Tc) | 4.5V, 10V | 3V @ 250µA | 56nC @ 10V | 4105pF @ 15V | ±20V | - | 2.5W (Ta), 62W (Tc) | 3.8 mOhm @ 21A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | Power56 | 8-PowerTDFN |
||
Infineon Technologies |
MOSFET N-CH 30V 62A TO-220AB
|
封装: TO-220-3 |
库存122,484 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 120A TO263-7
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存29,448 |
|
MOSFET (Metal Oxide) | 100V | 120A (Tc) | 6V, 10V | 3.8V @ 270µA | 210nC @ 10V | 15600pF @ 50V | ±20V | - | 375W (Tc) | 2 mOhm @ 100A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3 | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 30V 90A TO252-3
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存63,744 |
|
MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 2.2V @ 45µA | 75nC @ 10V | 5100pF @ 25V | ±16V | - | 94W (Tc) | 3.3 mOhm @ 90A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Vishay Siliconix |
MOSFET P-CH 12V 9A PPAK SC75-6L
|
封装: PowerPAK? SC-75-6L |
库存118,686 |
|
MOSFET (Metal Oxide) | 12V | 9A (Tc) | 1.5V, 4.5V | 900mV @ 250µA | 33nC @ 8V | 1180pF @ 6V | ±8V | - | 2.4W (Ta), 13W (Tc) | 25.5 mOhm @ 4A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK? SC-75-6L Single | PowerPAK? SC-75-6L |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 60V 115MA SOT-23
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存33,950,724 |
|
MOSFET (Metal Oxide) | 60V | 115mA (Ta) | 5V, 10V | 2.5V @ 250µA | - | 50pF @ 25V | ±20V | - | 200mW (Ta) | 7.5 Ohm @ 500mA, 10V | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23 (TO-236AB) | TO-236-3, SC-59, SOT-23-3 |