图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) | FET Feature | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Operating Temperature | Mounting Type | Supplier Device Package | Package / Case |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 55V 51A D2PAK
|
封装: - |
库存7,088 |
|
- | - | - | 4.5V, 10V | - | - | - | ±16V | - | - | - | -55°C ~ 175°C (TJ) | Surface Mount | - | - |
||
Infineon Technologies |
MOSFET N-CH 55V 75A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存7,024 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 180nC @ 10V | 4780pF @ 25V | ±20V | - | 230W (Tc) | 4.9 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 60V 1.8A SOT223
|
封装: TO-261-4, TO-261AA |
库存4,752 |
|
MOSFET (Metal Oxide) | 60V | 1.8A (Ta) | 4.5V, 10V | 1.8V @ 400µA | 17nC @ 10V | 368pF @ 25V | ±20V | - | 1.8W (Ta) | 300 mOhm @ 1.8A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
||
Infineon Technologies |
MOSFET N-CH 30V 62A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存57,060 |
|
MOSFET (Metal Oxide) | 30V | 62A (Tc) | 2.8V, 10V | 2V @ 250µA | 24nC @ 4.5V | 2417pF @ 15V | ±12V | - | 87W (Tc) | 12 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Infineon Technologies |
MOSFET N-CH 20V 77A D2PAK
|
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
库存390,000 |
|
MOSFET (Metal Oxide) | 20V | 77A (Tc) | 2.8V, 10V | 2V @ 250µA | 35nC @ 4.5V | 2410pF @ 10V | ±12V | - | 88W (Tc) | 8.5 mOhm @ 15A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
||
Global Power Technologies Group |
MOSFET N-CH 600V 4A TO220F
|
封装: TO-220-3 Full Pack |
库存3,552 |
|
MOSFET (Metal Oxide) | 600V | 4A (Tc) | 10V | 5V @ 250µA | 12nC @ 10V | 545pF @ 25V | ±30V | - | 30.4W (Tc) | 2.5 Ohm @ 2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220F | TO-220-3 Full Pack |
||
IXYS |
MOSFET N-CH 1000V 12A TO-247AD
|
封装: TO-3P-3 Full Pack |
库存8,904 |
|
MOSFET (Metal Oxide) | 1000V | 12A (Tc) | 10V | 5.5V @ 4mA | 77nC @ 10V | 2700pF @ 25V | ±20V | - | 300W (Tc) | 1.05 Ohm @ 6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247AD (IXFH) | TO-3P-3 Full Pack |
||
Fairchild/ON Semiconductor |
MOSFET P-CH 60V 14A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存127,452 |
|
MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 4V @ 250µA | 38nC @ 10V | 1155pF @ 25V | ±25V | - | 2.5W (Ta), 49W (Tc) | 140 mOhm @ 7A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
NXP |
MOSFET N-CH 55V 47A TO220AB
|
封装: TO-220-3 |
库存6,112 |
|
MOSFET (Metal Oxide) | 55V | 47A (Tc) | 10V | 4V @ 1mA | - | 1310pF @ 25V | ±20V | - | 106W (Tc) | 24 mOhm @ 25A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 55V 75A TO-220AB
|
封装: TO-220-3 |
库存4,320 |
|
MOSFET (Metal Oxide) | 55V | 75A (Tc) | 10V | 4V @ 250µA | 275nC @ 20V | 4000pF @ 25V | ±20V | - | 325W (Tc) | 7 mOhm @ 75A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 900V 5.2A TO-3PF
|
封装: SC-94 |
库存6,592 |
|
MOSFET (Metal Oxide) | 900V | 5.2A (Tc) | 10V | 5V @ 250µA | 59nC @ 10V | 2280pF @ 25V | ±30V | - | 107W (Tc) | 1.55 Ohm @ 2.6A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-3PF | SC-94 |
||
Vishay Siliconix |
MOSFET N-CH 50V 8.2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,312 |
|
MOSFET (Metal Oxide) | 50V | 8.2A (Tc) | 10V | 4V @ 250µA | 10nC @ 10V | 250pF @ 25V | ±20V | - | 25W (Tc) | 200 mOhm @ 4.6A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
Fairchild/ON Semiconductor |
PTNG 100V N-CHANNEL POWER TRENCH
|
封装: 8-PowerSFN |
库存5,024 |
|
MOSFET (Metal Oxide) | 100V | 300A (Tc) | 10V | 4.5V @ 250µA | 124nC @ 10V | - | ±20V | - | 429W (Tc) | 2 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | - | 8-PowerSFN |
||
Nexperia USA Inc. |
MOSFET N-CH 30V 20A SOT96-1
|
封装: 8-SOIC (0.154", 3.90mm Width) |
库存28,800 |
|
MOSFET (Metal Oxide) | 30V | 20A (Tc) | 4.5V, 10V | 3V @ 1mA | 34nC @ 4.5V | 3100pF @ 25V | ±20V | - | 3.5W (Tc) | 5.5 mOhm @ 15A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
||
Alpha & Omega Semiconductor Inc. |
MOSFET N-CH 100V 4.5A 8ULTRASO
|
封装: 3-PowerSMD, Flat Leads |
库存988,800 |
|
MOSFET (Metal Oxide) | 100V | 4.5A (Ta), 28A (Tc) | 4.5V, 10V | 2.7V @ 250µA | 44nC @ 10V | 2000pF @ 50V | ±20V | - | 1.9W (Ta), 75W (Tc) | 37 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | UltraSO-8? | 3-PowerSMD, Flat Leads |
||
STMicroelectronics |
MOSFET N-CH 525V 6.2A DPAK
|
封装: TO-252-3, DPak (2 Leads + Tab), SC-63 |
库存3,536 |
|
MOSFET (Metal Oxide) | 525V | 6A (Tc) | 10V | 4.5V @ 50µA | 34nC @ 10V | 737pF @ 100V | ±30V | - | 90W (Tc) | 980 mOhm @ 3.1A, 10V | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
||
STMicroelectronics |
MOSFET N-CH 525V 4A TO-220
|
封装: TO-220-3 |
库存4,240 |
|
MOSFET (Metal Oxide) | 525V | 4A (Tc) | 10V | 4.5V @ 50µA | 12nC @ 10V | 340pF @ 100V | ±30V | - | 45W (Tc) | 2.6 Ohm @ 2.2A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
||
TSC America Inc. |
MOSFET, SINGLE, N-CHANNEL, TRENC
|
封装: 8-PowerTDFN |
库存6,432 |
|
MOSFET (Metal Oxide) | 150V | 24A (Tc) | 6V, 10V | 4V @ 250µA | 36nC @ 10V | 1829pF @ 75V | ±20V | - | 96W (Tc) | 65 mOhm @ 4A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | 8-PDFN (5x6) | 8-PowerTDFN |
||
Nexperia USA Inc. |
MOSFET N-CH 55V 47.4A LFPAK
|
封装: SC-100, SOT-669 |
库存4,464 |
|
MOSFET (Metal Oxide) | 55V | 47.4A (Tc) | 10V | 4V @ 1mA | 21.9nC @ 10V | 1263pF @ 25V | ±20V | - | 85W (Tc) | 18 mOhm @ 20A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | LFPAK56, Power-SO8 | SC-100, SOT-669 |
||
Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A S-MINI
|
封装: TO-236-3, SC-59, SOT-23-3 |
库存2,192 |
|
MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | - | 4.6nC @ 4.5V | 270pF @ 10V | ±8V | - | 600mW (Ta) | 150 mOhm @ 1A, 4.5V | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
||
Infineon Technologies |
MOSFET N-CH 100V 59A TO-262
|
封装: TO-262-3 Long Leads, I2Pak, TO-262AA |
库存9,720 |
|
MOSFET (Metal Oxide) | 100V | 59A (Tc) | 10V | 4V @ 250µA | 120nC @ 10V | 2900pF @ 25V | ±20V | - | 160W (Tc) | 18 mOhm @ 35A, 10V | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I2Pak, TO-262AA |
||
STMicroelectronics |
MOSFET N-CH 40V 180A H2PAK-2
|
封装: TO-263-3, D2Pak (2 Leads + Tab) Variant |
库存5,088 |
|
MOSFET (Metal Oxide) | 40V | 180A (Tc) | 10V | 4V @ 250µA | 150nC @ 10V | 7400pF @ 25V | ±20V | - | 300W (Tc) | 1.7 mOhm @ 80A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | H2PAK | TO-263-3, D2Pak (2 Leads + Tab) Variant |
||
Rohm Semiconductor |
MOSFET N-CH 30V 1.4A WEMT6
|
封装: SOT-563, SOT-666 |
库存192,000 |
|
MOSFET (Metal Oxide) | 30V | 1.4A (Ta) | 4V, 10V | 2.5V @ 1mA | 1.4nC @ 5V | 70pF @ 10V | ±20V | - | 700mW (Ta) | 240 mOhm @ 1.4A, 10V | 150°C (TJ) | Surface Mount | 6-WEMT | SOT-563, SOT-666 |
||
Diodes Incorporated |
MOSFET P-CH 50V 200MA 3DFN
|
封装: 3-UFDFN |
库存3,552 |
|
MOSFET (Metal Oxide) | 50V | 200mA (Ta) | 2.5V, 4V | 1.2V @ 250µA | 0.58nC @ 4V | 50.54pF @ 25V | ±8V | - | 425mW (Ta) | 6 Ohm @ 100mA, 4V | -55°C ~ 150°C (TJ) | Surface Mount | 3-DFN1006 (1.0x0.6) | 3-UFDFN |
||
Vishay Siliconix |
MOSFET P-CH 30V 30A SO8
|
封装: PowerPAK? SO-8 |
库存22,446 |
|
MOSFET (Metal Oxide) | 30V | 30A (Tc) | 4.5V, 10V | 2.5V @ 250µA | 164nC @ 10V | - | ±20V | - | 68W (Tc) | 8.5 mOhm @ 10A, 10V | -55°C ~ 175°C (TJ) | Surface Mount | PowerPAK? SO-8 | PowerPAK? SO-8 |
||
ON Semiconductor |
MOSFET P-CH 20V 14A U8FL
|
封装: 8-PowerWDFN |
库存32,892 |
|
MOSFET (Metal Oxide) | 20V | 9A (Ta) | 2.5V, 4.5V | 1V @ 250µA | 56nC @ 4.5V | 5000pF @ 10V | ±8V | - | 840mW (Ta) | 6.7 mOhm @ 12A, 4.5V | -55°C ~ 150°C (TJ) | Surface Mount | 8-WDFN (3.3x3.3) | 8-PowerWDFN |
||
Microchip Technology |
MOSFET N-CH 60V 330MA TO92-3
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存23,256 |
|
MOSFET (Metal Oxide) | 60V | 330mA (Tj) | 10V | 2V @ 1mA | - | 50pF @ 25V | ±30V | - | 1W (Tc) | 3 Ohm @ 1A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-92-3 | TO-226-3, TO-92-3 (TO-226AA) |
||
Fairchild/ON Semiconductor |
MOSFET N-CH 600V 47A TO-247
|
封装: TO-247-3 |
库存6,160 |
|
MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 5V @ 250µA | 270nC @ 10V | 8000pF @ 25V | ±30V | - | 417W (Tc) | 70 mOhm @ 23.5A, 10V | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
||
Infineon Technologies |
MOSFET N-CH 650V 22.4A TO220
|
封装: TO-220-3 Full Pack |
库存24,558 |
|
MOSFET (Metal Oxide) | 650V | 22.4A (Tc) | 10V | 4.5V @ 1mA | 86nC @ 10V | 2340pF @ 100V | ±20V | - | 34.7W (Tc) | 150 mOhm @ 9.3A, 10V | -55°C ~ 150°C (TJ) | Through Hole | PG-TO220 Full Pack | TO-220-3 Full Pack |
||
Infineon Technologies |
MOSFET P-CH 30V 40A TSDSON-8
|
封装: 8-PowerTDFN |
库存52,266 |
|
MOSFET (Metal Oxide) | 30V | 13.5A (Ta), 40A (Tc) | 6V, 10V | 3.1V @ 105µA | 57.5nC @ 10V | 4785pF @ 15V | ±25V | - | 2.1W (Ta), 69W (Tc) | 8.6 mOhm @ 20A, 10V | -55°C ~ 150°C (TJ) | Surface Mount | PG-TSDSON-8 | 8-PowerTDFN |