页 37 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 单

记录 42,029
页  37/1,401
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
hot IPB05N03LB G
Infineon Technologies

MOSFET N-CH 30V 80A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 25nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 3209pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 mOhm @ 60A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO263-3-2
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存192,000
MOSFET (Metal Oxide)
30V
80A (Tc)
4.5V, 10V
2V @ 40µA
25nC @ 5V
3209pF @ 15V
±20V
-
94W (Tc)
5 mOhm @ 60A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO263-3-2
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
BUK6507-55C,127
NXP

MOSFET N-CH 55V 100A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 55V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 82nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5160pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 158W (Tc)
  • Rds On (Max) @ Id, Vgs: 7 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存4,496
MOSFET (Metal Oxide)
55V
100A (Tc)
4.5V, 10V
2.8V @ 1mA
82nC @ 10V
5160pF @ 25V
±16V
-
158W (Tc)
7 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PH3075L,115
NXP

MOSFET N-CH 75V 30A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 19nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: SC-100, SOT-669
库存3,504
MOSFET (Metal Oxide)
75V
30A (Tc)
4.5V, 10V
2.3V @ 1mA
19nC @ 5V
2070pF @ 25V
±15V
-
75W (Tc)
28 mOhm @ 15A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot FQA22P10
Fairchild/ON Semiconductor

MOSFET P-CH 100V 24A TO-3P

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 50nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 150W (Tc)
  • Rds On (Max) @ Id, Vgs: 125 mOhm @ 12A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存110,064
MOSFET (Metal Oxide)
100V
24A (Tc)
10V
4V @ 250µA
50nC @ 10V
1500pF @ 25V
±30V
-
150W (Tc)
125 mOhm @ 12A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
hot IRFB16N50KPBF
Vishay Siliconix

MOSFET N-CH 500V 17A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 89nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2210pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 280W (Tc)
  • Rds On (Max) @ Id, Vgs: 350 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存78,000
MOSFET (Metal Oxide)
500V
17A (Tc)
10V
5V @ 250µA
89nC @ 10V
2210pF @ 25V
±30V
-
280W (Tc)
350 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot NTP45N06L
ON Semiconductor

MOSFET N-CH 60V 45A TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 5V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 32nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 1700pF @ 25V
  • Vgs (Max): ±15V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 125W (Tj)
  • Rds On (Max) @ Id, Vgs: 28 mOhm @ 22.5A, 5V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存450,420
MOSFET (Metal Oxide)
60V
45A (Ta)
5V
2V @ 250µA
32nC @ 5V
1700pF @ 25V
±15V
-
2.4W (Ta), 125W (Tj)
28 mOhm @ 22.5A, 5V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
hot IRFBG30
Vishay Siliconix

MOSFET N-CH 1000V 3.1A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 1000V
  • Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 980pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 5 Ohm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存18,672
MOSFET (Metal Oxide)
1000V
3.1A (Tc)
10V
4V @ 250µA
80nC @ 10V
980pF @ 25V
±20V
-
125W (Tc)
5 Ohm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IXFT30N60Q
IXYS

MOSFET N-CH 600V 30A TO-268(D3)

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 4mA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4700pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 500W (Tc)
  • Rds On (Max) @ Id, Vgs: 230 mOhm @ 500mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-268
  • Package / Case: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
封装: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
库存7,360
MOSFET (Metal Oxide)
600V
30A (Tc)
10V
4.5V @ 4mA
125nC @ 10V
4700pF @ 25V
±20V
-
500W (Tc)
230 mOhm @ 500mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
TO-268
TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
FCA20N60_F109
Fairchild/ON Semiconductor

MOSFET N-CH 600V 20A TO-3P

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3080pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 208W (Tc)
  • Rds On (Max) @ Id, Vgs: 190 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-3PN
  • Package / Case: TO-3P-3, SC-65-3
封装: TO-3P-3, SC-65-3
库存7,152
MOSFET (Metal Oxide)
600V
20A (Tc)
10V
5V @ 250µA
98nC @ 10V
3080pF @ 25V
±30V
-
208W (Tc)
190 mOhm @ 10A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-3PN
TO-3P-3, SC-65-3
IXTA56N15T
IXYS

MOSFET N-CH 150V 56A TO-263

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 150V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2250pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 300W (Tc)
  • Rds On (Max) @ Id, Vgs: 36 mOhm @ 28A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-263 (IXTA)
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,608
MOSFET (Metal Oxide)
150V
56A (Tc)
10V
4.5V @ 250µA
34nC @ 10V
2250pF @ 25V
±30V
-
300W (Tc)
36 mOhm @ 28A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-263 (IXTA)
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TK11A60D(STA4,Q,M)
Toshiba Semiconductor and Storage

MOSFET N-CH 600V 11A TO-220SIS

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1550pF @ 25V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 45W (Tc)
  • Rds On (Max) @ Id, Vgs: 650 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220SIS
  • Package / Case: TO-220-3 Full Pack
封装: TO-220-3 Full Pack
库存6,528
MOSFET (Metal Oxide)
600V
11A (Ta)
10V
4V @ 1mA
28nC @ 10V
1550pF @ 25V
±30V
-
45W (Tc)
650 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
TO-220SIS
TO-220-3 Full Pack
BUK663R7-75C,118
Nexperia USA Inc.

MOSFET N-CH 75V 120A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 75V
  • Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.8V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 234nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 15450pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 306W (Tc)
  • Rds On (Max) @ Id, Vgs: 4 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,232
MOSFET (Metal Oxide)
75V
120A (Tc)
4.5V, 10V
2.8V @ 1mA
234nC @ 10V
15450pF @ 25V
±16V
-
306W (Tc)
4 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TPC6113(TE85L,F,M)
Toshiba Semiconductor and Storage

MOSFET P-CH 20V 5A VS6

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1.2V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V
  • Vgs (Max): ±12V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 55 mOhm @ 2.5A, 4.5V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: VS-6 (2.9x2.8)
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: SOT-23-6 Thin, TSOT-23-6
库存2,496
MOSFET (Metal Oxide)
20V
5A (Ta)
2.5V, 4.5V
1.2V @ 200µA
10nC @ 5V
690pF @ 10V
±12V
-
700mW (Ta)
55 mOhm @ 2.5A, 4.5V
150°C (TJ)
Surface Mount
VS-6 (2.9x2.8)
SOT-23-6 Thin, TSOT-23-6
DMP2008UFG-13
Diodes Incorporated

MOSFET P-CH 20V 14A POWERDI

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 72nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 6909pF @ 10V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 41W (Tc)
  • Rds On (Max) @ Id, Vgs: 8 mOhm @ 12A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerWDFN
封装: 8-PowerWDFN
库存4,576
MOSFET (Metal Oxide)
20V
14A (Ta), 54A (Tc)
1.5V, 4.5V
1V @ 250µA
72nC @ 4.5V
6909pF @ 10V
±8V
-
2.4W (Ta), 41W (Tc)
8 mOhm @ 12A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerWDFN
hot NTLUS3A18PZTCG
ON Semiconductor

MOSFET P-CH 20V 8.2A UDFN

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20V
  • Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
  • Vgs (Max): ±8V
  • FET Feature: -
  • Power Dissipation (Max): 700mW (Ta)
  • Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 6-UDFN (2x2)
  • Package / Case: 6-UDFN Exposed Pad
封装: 6-UDFN Exposed Pad
库存44,652
MOSFET (Metal Oxide)
20V
5.1A (Ta)
1.5V, 4.5V
1V @ 250µA
28nC @ 4.5V
2240pF @ 15V
±8V
-
700mW (Ta)
18 mOhm @ 7A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
6-UDFN (2x2)
6-UDFN Exposed Pad
STU13NM60N
STMicroelectronics

MOSFET N-CH 600V 11A IPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 50V
  • Vgs (Max): ±25V
  • FET Feature: -
  • Power Dissipation (Max): 90W (Tc)
  • Rds On (Max) @ Id, Vgs: 360 mOhm @ 5.5A, 10V
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: IPAK (TO-251)
  • Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
封装: TO-251-3 Short Leads, IPak, TO-251AA
库存4,384
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
4V @ 250µA
27nC @ 10V
790pF @ 50V
±25V
-
90W (Tc)
360 mOhm @ 5.5A, 10V
150°C (TJ)
Through Hole
IPAK (TO-251)
TO-251-3 Short Leads, IPak, TO-251AA
hot IRFI840GPBF
Vishay Siliconix

MOSFET N-CH 500V 4.6A TO220FP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 40W (Tc)
  • Rds On (Max) @ Id, Vgs: 850 mOhm @ 2.8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
封装: TO-220-3 Full Pack, Isolated Tab
库存66,240
MOSFET (Metal Oxide)
500V
4.6A (Tc)
10V
4V @ 250µA
67nC @ 10V
1300pF @ 25V
±20V
-
40W (Tc)
850 mOhm @ 2.8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
FDMT800100DC
Fairchild/ON Semiconductor

MOSFET N-CH 100V 24A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 111nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 7835pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.95 mOhm @ 24A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-Dual Cool?88
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存6,496
MOSFET (Metal Oxide)
100V
24A (Ta), 162A (Tc)
6V, 10V
4V @ 250µA
111nC @ 10V
7835pF @ 50V
±20V
-
3.2W (Ta), 156W (Tc)
2.95 mOhm @ 24A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-Dual Cool?88
8-PowerVDFN
SIHS36N50D-E3
Vishay Siliconix

MOSFET N-CH 500V 36A SUPER-247

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500V
  • Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3233pF @ 100V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 446W (Tc)
  • Rds On (Max) @ Id, Vgs: 130 mOhm @ 18A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: SUPER-247 (TO-274AA)
  • Package / Case: TO-247-3
封装: TO-247-3
库存11,760
MOSFET (Metal Oxide)
500V
36A (Tc)
10V
5V @ 250µA
125nC @ 10V
3233pF @ 100V
±30V
-
446W (Tc)
130 mOhm @ 18A, 10V
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247 (TO-274AA)
TO-247-3
hot IRFS4410PBF
Infineon Technologies

MOSFET N-CH 100V 88A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 88A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 5150pF @ 50V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 200W (Tc)
  • Rds On (Max) @ Id, Vgs: 10 mOhm @ 58A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,584
MOSFET (Metal Oxide)
100V
88A (Tc)
10V
4V @ 150µA
180nC @ 10V
5150pF @ 50V
±20V
-
200W (Tc)
10 mOhm @ 58A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot BSC010NE2LSI
Infineon Technologies

MOSFET N-CH 25V 38A TDSON-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 4200pF @ 12V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.05 mOhm @ 30A, 10V
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TDSON-8
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存900,984
MOSFET (Metal Oxide)
25V
38A (Ta), 100A (Tc)
4.5V, 10V
2V @ 250µA
59nC @ 10V
4200pF @ 12V
±20V
-
2.5W (Ta), 96W (Tc)
1.05 mOhm @ 30A, 10V
-
Surface Mount
PG-TDSON-8
8-PowerTDFN
PSMN1R4-40YLD-2X
Nexperia USA Inc.

PSMN1R4-40YLD/SOT669/LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 240A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6661 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 238W (Ta)
  • Rds On (Max) @ Id, Vgs: 1.4mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
240A (Ta)
4.5V, 10V
2.2V @ 1mA
143 nC @ 10 V
6661 pF @ 20 V
±20V
-
238W (Ta)
1.4mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
DMTH10H015SPSWQ-13
Diodes Incorporated

MOSFET BVDSS: 61V~100V POWERDI50

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2343 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.7W (Ta), 94W (Tc)
  • Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: PowerDI5060-8 (Type UX)
  • Package / Case: 8-PowerTDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
100 V
56A (Tc)
6V, 10V
4V @ 250µA
30.1 nC @ 10 V
2343 pF @ 50 V
±20V
-
2.7W (Ta), 94W (Tc)
14.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
PowerDI5060-8 (Type UX)
8-PowerTDFN
IRF6811STRPBF-INF
Infineon Technologies

DIRECTFET PLUS POWER MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 2.1V @ 35µA
  • Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1590 pF @ 13 V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta), 32W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.7mOhm @ 19A, 10V
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: DirectFET™ Isometric SQ
  • Package / Case: DirectFET™ Isometric SQ
封装: -
Request a Quote
MOSFET (Metal Oxide)
25 V
19A (Ta), 74A (Tc)
-
2.1V @ 35µA
17 nC @ 4.5 V
1590 pF @ 13 V
±16V
-
2.1W (Ta), 32W (Tc)
3.7mOhm @ 19A, 10V
-40°C ~ 150°C (TJ)
Surface Mount
DirectFET™ Isometric SQ
DirectFET™ Isometric SQ
RJK5009DPP-00-T2
Renesas Electronics Corporation

N-CHANNEL POWER MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHH080N60E-T1-GE3
Vishay Siliconix

E SERIES POWER MOSFET POWERPAK 8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2557 pF @ 100 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 184W (Tc)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 17A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: 8-PowerTDFN
封装: -
库存9,366
MOSFET (Metal Oxide)
600 V
32A (Tc)
10V
5V @ 250µA
63 nC @ 10 V
2557 pF @ 100 V
±30V
-
184W (Tc)
80mOhm @ 17A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
DMTH10H010SPS-13
Diodes Incorporated

MOSFET N-CH 100V PWRDI5060

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 123A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 56.4 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4468 pF @ 50 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 8.8mOhm @ 13A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI5060-8
  • Package / Case: 8-PowerTDFN
封装: -
库存29,655
MOSFET (Metal Oxide)
100 V
11.8A (Ta), 123A (Tc)
6V, 10V
4V @ 250µA
56.4 nC @ 10 V
4468 pF @ 50 V
±20V
-
1.5W (Ta)
8.8mOhm @ 13A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerDI5060-8
8-PowerTDFN
NVTFS5C460NLTAG
onsemi

MOSFET N-CH 40V 19A/74A 8WDFN

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 74A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 40µA
  • Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.1W (Ta), 50W (Tc)
  • Rds On (Max) @ Id, Vgs: 4.8mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
19A (Ta), 74A (Tc)
4.5V, 10V
2V @ 40µA
11 nC @ 10 V
1300 pF @ 25 V
±20V
-
3.1W (Ta), 50W (Tc)
4.8mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
2N7002-TP-HF
Micro Commercial Co

Interface

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 340mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 35 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.08W
  • Rds On (Max) @ Id, Vgs: 2.5Ohm @ 300mA, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
340mA (Ta)
4.5V, 10V
2.5V @ 250µA
1.7 nC @ 10 V
35 pF @ 25 V
±20V
-
1.08W
2.5Ohm @ 300mA, 10V
-55°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
BSS308PEH6327XTSA1-ML
MOSLEADER

P -30V SOT-23

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-