页 33 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品 | 深圳黑森尔电子
联系我们
SalesDept@heisener.com +86-0755-87210559 ext.802
登入/注册
BOM
购物车 0

晶体管 - FET，MOSFET - 单

记录 42,029
页  33/1,401
图片
零件编号
制造商
描述
封装
库存
数量
Technology
Drain to Source Voltage (Vdss)
Current - Continuous Drain (Id) @ 25°C
Drive Voltage (Max Rds On, Min Rds On)
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Vgs (Max)
FET Feature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Operating Temperature
Mounting Type
Supplier Device Package
Package / Case
BSP170PE6327T
Infineon Technologies

MOSFET P-CH 60V 1.9A SOT223

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs: 300 mOhm @ 1.9A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-SOT223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存6,160
MOSFET (Metal Oxide)
60V
1.9A (Ta)
10V
4V @ 250µA
14nC @ 10V
410pF @ 25V
±20V
-
1.8W (Ta)
300 mOhm @ 1.9A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PG-SOT223-4
TO-261-4, TO-261AA
hot JANTX2N6796
Microsemi Corporation

MOSFET N-CH 100V 8A

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 28.51nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 800mW (Ta), 25W (Tc)
  • Rds On (Max) @ Id, Vgs: 195 mOhm @ 8A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-205AF (TO-39)
  • Package / Case: TO-205AD, TO-39-3 Metal Can
封装: TO-205AD, TO-39-3 Metal Can
库存62,568
MOSFET (Metal Oxide)
100V
8A (Tc)
10V
4V @ 250µA
28.51nC @ 10V
-
±20V
-
800mW (Ta), 25W (Tc)
195 mOhm @ 8A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-205AF (TO-39)
TO-205AD, TO-39-3 Metal Can
hot SIR408DP-T1-GE3
Vishay Siliconix

MOSFET N-CH 25V 50A PPAK SO-8

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1230pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 4.8W (Ta), 44.6W (Tc)
  • Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK? SO-8
  • Package / Case: PowerPAK? SO-8
封装: PowerPAK? SO-8
库存11,196
MOSFET (Metal Oxide)
25V
50A (Tc)
4.5V, 10V
2.5V @ 250µA
33nC @ 10V
1230pF @ 15V
±20V
-
4.8W (Ta), 44.6W (Tc)
6.3 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK? SO-8
PowerPAK? SO-8
hot IRFZ14S
Vishay Siliconix

MOSFET N-CH 60V 10A D2PAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 43W (Tc)
  • Rds On (Max) @ Id, Vgs: 200 mOhm @ 6A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D2PAK
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存3,952
MOSFET (Metal Oxide)
60V
10A (Tc)
10V
4V @ 250µA
11nC @ 10V
300pF @ 25V
±20V
-
3.7W (Ta), 43W (Tc)
200 mOhm @ 6A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D2PAK
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
hot IRF9520NPBF
Infineon Technologies

MOSFET P-CH 100V 6.8A TO-220AB

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100V
  • Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 480 mOhm @ 4A, 10V
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存469,704
MOSFET (Metal Oxide)
100V
6.8A (Tc)
-
4V @ 250µA
27nC @ 10V
350pF @ 25V
-
-
-
480 mOhm @ 4A, 10V
-
Through Hole
TO-220AB
TO-220-3
NVMFS5C628NLWFT3G
ON Semiconductor

MOSFET N-CH 60V SO8FL

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2V @ 135µA
  • Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3600pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.7W (Ta), 110W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.4 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Package / Case: 8-PowerTDFN
封装: 8-PowerTDFN
库存5,856
MOSFET (Metal Oxide)
60V
-
4.5V, 10V
2V @ 135µA
52nC @ 10V
3600pF @ 25V
±20V
-
3.7W (Ta), 110W (Tc)
2.4 mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
5-DFN (5x6) (8-SOFL)
8-PowerTDFN
STMFS5C628NLT1G
ON Semiconductor

MOSFET N-CH 60V

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存6,896
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
DMT3003LFG-7
Diodes Incorporated

MOSFET NCH 30V 22A POWERDI

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2370pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.4W (Ta), 62W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerDI3333-8
  • Package / Case: 8-PowerVDFN
封装: 8-PowerVDFN
库存3,952
MOSFET (Metal Oxide)
30V
22A (Ta), 100A (Tc)
4.5V, 10V
3V @ 250µA
44nC @ 10V
2370pF @ 15V
±20V
-
2.4W (Ta), 62W (Tc)
3.2 mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerDI3333-8
8-PowerVDFN
hot IRF7413TRPBF
Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 79nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.5W (Ta)
  • Rds On (Max) @ Id, Vgs: 11 mOhm @ 7.3A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-SO
  • Package / Case: 8-SOIC (0.154", 3.90mm Width)
封装: 8-SOIC (0.154", 3.90mm Width)
库存918,072
MOSFET (Metal Oxide)
30V
13A (Ta)
4.5V, 10V
3V @ 250µA
79nC @ 10V
1800pF @ 25V
±20V
-
2.5W (Ta)
11 mOhm @ 7.3A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-SO
8-SOIC (0.154", 3.90mm Width)
BUZ11_NR4941
Fairchild/ON Semiconductor

MOSFET N-CH 50V 30A TO-220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 50V
  • Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 40 mOhm @ 15A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220-3
  • Package / Case: TO-220-3
封装: TO-220-3
库存21,600
MOSFET (Metal Oxide)
50V
30A (Tc)
10V
4V @ 1mA
-
2000pF @ 25V
±20V
-
75W (Tc)
40 mOhm @ 15A, 10V
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3
hot IRFH7446TRPBF
Infineon Technologies

MOSFET N CH 40V 85A PQFN 5X6

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40V
  • Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
  • Vgs(th) (Max) @ Id: 3.9V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 3174pF @ 25V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 78W (Tc)
  • Rds On (Max) @ Id, Vgs: 3.3 mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (5x6)
  • Package / Case: 8-TQFN Exposed Pad
封装: 8-TQFN Exposed Pad
库存7,280
MOSFET (Metal Oxide)
40V
85A (Tc)
6V, 10V
3.9V @ 100µA
98nC @ 10V
3174pF @ 25V
±20V
-
78W (Tc)
3.3 mOhm @ 50A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
8-PQFN (5x6)
8-TQFN Exposed Pad
hot NDT014L
Fairchild/ON Semiconductor

MOSFET N-CH 60V 2.8A SOT-223

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60V
  • Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V
  • Input Capacitance (Ciss) (Max) @ Vds: 214pF @ 30V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta)
  • Rds On (Max) @ Id, Vgs: 160 mOhm @ 3.4A, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223-4
  • Package / Case: TO-261-4, TO-261AA
封装: TO-261-4, TO-261AA
库存707,148
MOSFET (Metal Oxide)
60V
2.8A (Ta)
4.5V, 10V
3V @ 250µA
5nC @ 4.5V
214pF @ 30V
±20V
-
3W (Ta)
160 mOhm @ 3.4A, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-223-4
TO-261-4, TO-261AA
PSMN017-80PS,127
Nexperia USA Inc.

MOSFET N-CH 80V TO220AB

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 1573pF @ 40V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 103W (Tc)
  • Rds On (Max) @ Id, Vgs: 17 mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-220AB
  • Package / Case: TO-220-3
封装: TO-220-3
库存13,302
MOSFET (Metal Oxide)
80V
50A (Tc)
10V
4V @ 1mA
26nC @ 10V
1573pF @ 40V
±20V
-
103W (Tc)
17 mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Through Hole
TO-220AB
TO-220-3
PSMN2R6-30YLC,115
Nexperia USA Inc.

MOSFET N-CH 30V 100A LFPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 1.95V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds: 2435pF @ 15V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 106W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.8 mOhm @ 25A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: LFPAK56, Power-SO8
  • Package / Case: SC-100, SOT-669
封装: SC-100, SOT-669
库存15,954
MOSFET (Metal Oxide)
30V
100A (Tc)
4.5V, 10V
1.95V @ 1mA
39nC @ 10V
2435pF @ 15V
±20V
-
106W (Tc)
2.8 mOhm @ 25A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
LFPAK56, Power-SO8
SC-100, SOT-669
hot STD17NF03LT4
STMicroelectronics

MOSFET N-CH 30V 17A DPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30V
  • Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6.5nC @ 5V
  • Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 25V
  • Vgs (Max): ±16V
  • FET Feature: -
  • Power Dissipation (Max): 30W (Tc)
  • Rds On (Max) @ Id, Vgs: 50 mOhm @ 8.5A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: D-Pak
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存621,684
MOSFET (Metal Oxide)
30V
17A (Tc)
5V, 10V
2.2V @ 250µA
6.5nC @ 5V
320pF @ 25V
±16V
-
30W (Tc)
50 mOhm @ 8.5A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
D-Pak
TO-252-3, DPak (2 Leads + Tab), SC-63
CEDM7004-TR-PBFREE
Central Semiconductor Corp

MOSFET N-CH 30V 1.78A SOT883

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 30 V
  • Current - Continuous Drain (Id) @ 25°C: 1.78A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.79 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 43 pF @ 25 V
  • Vgs (Max): 8V
  • FET Feature: -
  • Power Dissipation (Max): 100mW (Ta)
  • Rds On (Max) @ Id, Vgs: 460mOhm @ 200mA, 4.5V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-883
  • Package / Case: SC-101, SOT-883
封装: -
库存133,707
MOSFET (Metal Oxide)
30 V
1.78A (Ta)
1.8V, 4.5V
1V @ 250µA
0.79 nC @ 4.5 V
43 pF @ 25 V
8V
-
100mW (Ta)
460mOhm @ 200mA, 4.5V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-883
SC-101, SOT-883
SIJH800E-T1-GE3
Vishay Siliconix

N-CHANNEL 80-V (D-S) 175C MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 299A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 10230 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.3W (Ta), 333W (Tc)
  • Rds On (Max) @ Id, Vgs: 1.55mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® 8 x 8
  • Package / Case: PowerPAK® 8 x 8
封装: -
库存7,188
MOSFET (Metal Oxide)
80 V
29A (Ta), 299A (Tc)
7.5V, 10V
4V @ 250µA
210 nC @ 10 V
10230 pF @ 40 V
±20V
-
3.3W (Ta), 333W (Tc)
1.55mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PowerPAK® 8 x 8
PowerPAK® 8 x 8
2N7002-BK-PBFREE
Central Semiconductor Corp

MOSFET N-CH 60V 115MA SOT23

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 115mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 0.59 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
  • Vgs (Max): 40V
  • FET Feature: -
  • Power Dissipation (Max): 350mW (Ta)
  • Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-23
  • Package / Case: TO-236-3, SC-59, SOT-23-3
封装: -
Request a Quote
MOSFET (Metal Oxide)
60 V
115mA (Tc)
5V, 10V
2.5V @ 250µA
0.59 nC @ 4.5 V
50 pF @ 25 V
40V
-
350mW (Ta)
7.5Ohm @ 500mA, 10V
-65°C ~ 150°C (TJ)
Surface Mount
SOT-23
TO-236-3, SC-59, SOT-23-3
SSM3K341TU-LXHF
Toshiba Semiconductor and Storage

AECQ MOSFET NCH 60V 6A SOT323F

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 1W (Ta)
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 4A, 10V
  • Operating Temperature: 175°C
  • Mounting Type: Surface Mount
  • Supplier Device Package: UFM
  • Package / Case: 3-SMD, Flat Leads
封装: -
库存33,078
MOSFET (Metal Oxide)
60 V
6A (Ta)
4V, 10V
2.5V @ 100µA
9.3 nC @ 10 V
550 pF @ 10 V
±20V
-
1W (Ta)
36mOhm @ 4A, 10V
175°C
Surface Mount
UFM
3-SMD, Flat Leads
STTFS010N10MCL
onsemi

PTNG 100V LL

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: 10.7A (Ta), 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
库存4,500
-
-
10.7A (Ta), 50A (Tc)
-
-
-
-
-
-
-
-
-
-
-
-
APT30M36JLL
Microchip Technology

MOSFET N-CH 300V 76A ISOTOP

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 300 V
  • Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: 5V @ 2.5mA
  • Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 6480 pF @ 25 V
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: 36mOhm @ 38A, 10V
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Supplier Device Package: ISOTOP®
  • Package / Case: SOT-227-4, miniBLOC
封装: -
Request a Quote
MOSFET (Metal Oxide)
300 V
76A (Tc)
-
5V @ 2.5mA
115 nC @ 10 V
6480 pF @ 25 V
-
-
-
36mOhm @ 38A, 10V
-
Chassis Mount
ISOTOP®
SOT-227-4, miniBLOC
DMPH4023SK3Q-13
Diodes Incorporated

MOSFET P-CH 40V 50A TO252 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 18.7 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 1091 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 2.1W (Ta)
  • Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TO-252 (DPAK)
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
50A (Tc)
10V
3V @ 250µA
18.7 nC @ 10 V
1091 pF @ 20 V
±20V
-
2.1W (Ta)
26mOhm @ 10A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
TO-252 (DPAK)
TO-252-3, DPAK (2 Leads + Tab), SC-63
SIR680ADP-T1-RE3
Vishay Siliconix

MOSFET N-CH 80V 30.7A/125A PPAK

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 80 V
  • Current - Continuous Drain (Id) @ 25°C: 30.7A (Ta), 125A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7.5V, 10V
  • Vgs(th) (Max) @ Id: 3.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 4415 pF @ 40 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.88mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PowerPAK® SO-8
  • Package / Case: PowerPAK® SO-8
封装: -
库存17,502
MOSFET (Metal Oxide)
80 V
30.7A (Ta), 125A (Tc)
7.5V, 10V
3.5V @ 250µA
83 nC @ 10 V
4415 pF @ 40 V
±20V
-
6.25W (Ta), 104W (Tc)
2.88mOhm @ 20A, 10V
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® SO-8
PowerPAK® SO-8
DMP2109UVTQ-7
Diodes Incorporated

MOSFET BVDSS: 8V~24V TSOT26 T&R

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
  • Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 10 V
  • Vgs (Max): ±10V
  • FET Feature: -
  • Power Dissipation (Max): 1.2W (Ta)
  • Rds On (Max) @ Id, Vgs: 80mOhm @ 2.8A, 4.5V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: TSOT-26
  • Package / Case: SOT-23-6 Thin, TSOT-23-6
封装: -
Request a Quote
MOSFET (Metal Oxide)
20 V
3.7A (Ta)
2.5V, 4.5V
1V @ 250µA
6 nC @ 4.5 V
443 pF @ 10 V
±10V
-
1.2W (Ta)
80mOhm @ 2.8A, 4.5V
-55°C ~ 150°C (TJ)
Surface Mount
TSOT-26
SOT-23-6 Thin, TSOT-23-6
PJF4NA50A_T0_00001
Panjit International Inc.

500V N-CHANNEL MOSFET

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 500 V
  • Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 449 pF @ 25 V
  • Vgs (Max): ±30V
  • FET Feature: -
  • Power Dissipation (Max): 42W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2A, 10V
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: ITO-220AB
  • Package / Case: TO-220-3 Full Pack
封装: -
Request a Quote
MOSFET (Metal Oxide)
500 V
4A (Ta)
10V
4V @ 250µA
9.8 nC @ 10 V
449 pF @ 25 V
±30V
-
42W (Tc)
2.3Ohm @ 2A, 10V
-55°C ~ 150°C (TJ)
Through Hole
ITO-220AB
TO-220-3 Full Pack
TSM025NH04CR-RLG
Taiwan Semiconductor Corporation

40V, 100A, SINGLE N-CHANNEL POWE

  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
  • Vgs(th) (Max) @ Id: 3.6V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 3794 pF @ 25 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 136W (Tc)
  • Rds On (Max) @ Id, Vgs: 2.5mOhm @ 50A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 8-PDFNU (5x6)
  • Package / Case: 8-PowerTDFN
封装: -
库存14,790
MOSFET (Metal Oxide)
40 V
26A (Ta), 100A (Tc)
7V, 10V
3.6V @ 250µA
59 nC @ 10 V
3794 pF @ 25 V
±20V
-
136W (Tc)
2.5mOhm @ 50A, 10V
-55°C ~ 175°C (TJ)
Surface Mount, Wettable Flank
8-PDFNU (5x6)
8-PowerTDFN
NVTFS9D6P04M8L
onsemi

MOSFET P-CH 20V 8-SOIC

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 40 V
  • Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 64A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Vgs(th) (Max) @ Id: 2.4V @ 580µA
  • Gate Charge (Qg) (Max) @ Vgs: 34.6 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2312 pF @ 20 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 3.2W (Ta), 75W (Tc)
  • Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-WDFN (3.3x3.3)
  • Package / Case: 8-PowerWDFN
封装: -
Request a Quote
MOSFET (Metal Oxide)
40 V
13A (Ta), 64A (Tc)
4.5V, 10V
2.4V @ 580µA
34.6 nC @ 10 V
2312 pF @ 20 V
±20V
-
3.2W (Ta), 75W (Tc)
9.5mOhm @ 20A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
8-WDFN (3.3x3.3)
8-PowerWDFN
IPD380P06NMATMA1
Infineon Technologies

MOSFET P-CH 60V 35A TO252-3

  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 60 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Vgs(th) (Max) @ Id: 4V @ 1.7mA
  • Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
  • Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
  • Vgs (Max): ±20V
  • FET Feature: -
  • Power Dissipation (Max): 125W (Tc)
  • Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: PG-TO252-3
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
封装: -
库存61,548
MOSFET (Metal Oxide)
60 V
35A (Tc)
10V
4V @ 1.7mA
63 nC @ 10 V
2500 pF @ 30 V
±20V
-
125W (Tc)
38mOhm @ 35A, 10V
-55°C ~ 175°C (TJ)
Surface Mount
PG-TO252-3
TO-252-3, DPAK (2 Leads + Tab), SC-63
AON6908A_101
Alpha & Omega Semiconductor Inc.

MOSFET

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2SK2485-A
Renesas Electronics Corporation

POWER FIELD-EFFECT TRANSISTOR

  • FET Type: -
  • Technology: -
  • Drain to Source Voltage (Vdss): -
  • Current - Continuous Drain (Id) @ 25°C: -
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Vgs(th) (Max) @ Id: -
  • Gate Charge (Qg) (Max) @ Vgs: -
  • Input Capacitance (Ciss) (Max) @ Vds: -
  • Vgs (Max): -
  • FET Feature: -
  • Power Dissipation (Max): -
  • Rds On (Max) @ Id, Vgs: -
  • Operating Temperature: -
  • Mounting Type: -
  • Supplier Device Package: -
  • Package / Case: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-