页 190 - 晶体管 - FET，MOSFET - 单 | 分立半导体产品

IPP80N04S3-04

Infineon Technologies

MOSFET N-CH 40V 80A TO220-3

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs: 80nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 5200pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 136W (Tc)
Rds On (Max) @ Id, Vgs: 4.1 mOhm @ 80A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: PG-TO220-3-1
Package / Case: TO-220-3

封装: TO-220-3

库存7,744

MOSFET (Metal Oxide)

40V

80A (Tc)

10V

4V @ 90µA

80nC @ 10V

5200pF @ 25V

±20V

-

136W (Tc)

4.1 mOhm @ 80A, 10V

-55°C ~ 175°C (TJ)

Through Hole

PG-TO220-3-1

TO-220-3

IPD09N03LB G

Infineon Technologies

MOSFET N-CH 30V 50A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 58W (Tc)
Rds On (Max) @ Id, Vgs: 9.1 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存8,880

MOSFET (Metal Oxide)

30V

50A (Tc)

4.5V, 10V

2V @ 20µA

13nC @ 5V

1600pF @ 15V

±20V

-

58W (Tc)

9.1 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

PG-TO252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

BSS138N E8004

Infineon Technologies

MOSFET N-CH 60V 230MA SOT-23

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 41pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 230mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: PG-SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

库存5,152

MOSFET (Metal Oxide)

60V

230mA (Ta)

4.5V, 10V

1.4V @ 250µA

1.4nC @ 10V

41pF @ 25V

±20V

-

360mW (Ta)

3.5 Ohm @ 230mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

PG-SOT23-3

TO-236-3, SC-59, SOT-23-3

SI5449DC-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 3.1A 1206-8

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs(th) (Max) @ Id: 600mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): ±12V
FET Feature: -
Power Dissipation (Max): 1.3W (Ta)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 3.1A, 4.5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 1206-8 ChipFET?
Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

库存4,720

MOSFET (Metal Oxide)

30V

3.1A (Ta)

2.5V, 4.5V

600mV @ 250µA (Min)

11nC @ 4.5V

-

±12V

-

1.3W (Ta)

85 mOhm @ 3.1A, 4.5V

-55°C ~ 150°C (TJ)

Surface Mount

1206-8 ChipFET?

8-SMD, Flat Lead

IPI50N12S3L15AKSA1

Infineon Technologies

MOSFET N-CHANNEL_100+

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

库存7,104

-

IRF540NSTRRPBF

Infineon Technologies

MOSFET N-CH 100V 33A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 71nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 44 mOhm @ 16A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,480

MOSFET (Metal Oxide)

100V

33A (Tc)

10V

4V @ 250µA

71nC @ 10V

1960pF @ 25V

±20V

-

130W (Tc)

44 mOhm @ 16A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXTP170N075T2

IXYS

MOSFET N-CH 75V 170A TO-220

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 170A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 109nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 6860pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 5.4 mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存450,564

MOSFET (Metal Oxide)

75V

170A (Tc)

10V

4V @ 250µA

109nC @ 10V

6860pF @ 25V

±20V

-

360W (Tc)

5.4 mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

DKI04046

Sanken

MOSFET N-CH 40V 48A TO-252

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 650µA
Gate Charge (Qg) (Max) @ Vgs: 35.3nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 47W (Tc)
Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 35.4A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存5,648

MOSFET (Metal Oxide)

40V

48A (Tc)

4.5V, 10V

2.5V @ 650µA

35.3nC @ 10V

2410pF @ 25V

±20V

-

47W (Tc)

5.2 mOhm @ 35.4A, 10V

150°C (TJ)

Surface Mount

TO-252

TO-252-3, DPak (2 Leads + Tab), SC-63

MTM861270LBF

Panasonic Electronic Components

MOSFET P-CH 20V 2A WSSMINI6

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
Vgs(th) (Max) @ Id: 1.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 540mW (Ta)
Rds On (Max) @ Id, Vgs: 120 mOhm @ 1A, 4V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: WSSMini6-F1
Package / Case: 6-SMD, Flat Leads

封装: 6-SMD, Flat Leads

库存72,600

MOSFET (Metal Oxide)

20V

2A (Ta)

1.8V, 4V

1.1V @ 1mA

-

300pF @ 10V

±10V

-

540mW (Ta)

120 mOhm @ 1A, 4V

150°C (TJ)

Surface Mount

WSSMini6-F1

6-SMD, Flat Leads

IRF9Z34PBF

Vishay Siliconix

MOSFET P-CH 60V 18A TO-220AB

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 88W (Tc)
Rds On (Max) @ Id, Vgs: 140 mOhm @ 11A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: TO-220-3

库存61,908

MOSFET (Metal Oxide)

60V

18A (Tc)

10V

4V @ 250µA

34nC @ 10V

1100pF @ 25V

±20V

-

88W (Tc)

140 mOhm @ 11A, 10V

-55°C ~ 175°C (TJ)

Through Hole

TO-220AB

TO-220-3

IRFP4227PBF

Infineon Technologies

MOSFET N-CH 200V 65A TO-247AC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 200V
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 98nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 4600pF @ 25V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 330W (Tc)
Rds On (Max) @ Id, Vgs: 25 mOhm @ 46A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: TO-247-3

库存21,816

MOSFET (Metal Oxide)

200V

65A (Tc)

10V

5V @ 250µA

98nC @ 10V

4600pF @ 25V

±30V

-

330W (Tc)

25 mOhm @ 46A, 10V

-40°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

MTM982400BBF

Panasonic Electronic Components

MOSFET N-CH 40V 7A SO8-F1

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 1750pF @ 10V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2W (Ta)
Rds On (Max) @ Id, Vgs: 23 mOhm @ 7A, 10V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SO8-F1-B
Package / Case: 8-SMD, Flat Lead

封装: 8-SMD, Flat Lead

库存5,936

MOSFET (Metal Oxide)

40V

7A (Ta)

5V, 10V

2.5V @ 1mA

-

1750pF @ 10V

±20V

-

2W (Ta)

23 mOhm @ 7A, 10V

150°C (TJ)

Surface Mount

SO8-F1-B

8-SMD, Flat Lead

IRLZ44SPBF

Vishay Siliconix

MOSFET N-CH 60V 50A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 66nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 3300pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 3.7W (Ta), 150W (Tc)
Rds On (Max) @ Id, Vgs: 28 mOhm @ 31A, 5V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存19,020

MOSFET (Metal Oxide)

60V

50A (Tc)

4V, 5V

2V @ 250µA

66nC @ 5V

3300pF @ 25V

±10V

-

3.7W (Ta), 150W (Tc)

28 mOhm @ 31A, 5V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK964R8-60E,118

Nexperia USA Inc.

MOSFET N-CH 60V 100A D2PAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 65nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 9710pF @ 25V
Vgs (Max): ±10V
FET Feature: -
Power Dissipation (Max): 234W (Tc)
Rds On (Max) @ Id, Vgs: 4.4 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D2PAK
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存79,086

MOSFET (Metal Oxide)

60V

100A (Tc)

5V

2.1V @ 1mA

65nC @ 5V

9710pF @ 25V

±10V

-

234W (Tc)

4.4 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D2PAK

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

BUK7240-100A,118

Nexperia USA Inc.

MOSFET N-CH 100V 34A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2293pF @ 25V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 40 mOhm @ 25A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存67,158

MOSFET (Metal Oxide)

100V

34A (Tc)

10V

4V @ 1mA

-

2293pF @ 25V

±20V

-

114W (Tc)

40 mOhm @ 25A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

DPAK

TO-252-3, DPak (2 Leads + Tab), SC-63

IRF7413ZTRPBF

Infineon Technologies

MOSFET N-CH 30V 13A 8-SOIC

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs(th) (Max) @ Id: 2.25V @ 25µA
Gate Charge (Qg) (Max) @ Vgs: 14nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1210pF @ 15V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 10 mOhm @ 13A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

库存644,160

MOSFET (Metal Oxide)

30V

13A (Ta)

4.5V, 10V

2.25V @ 25µA

14nC @ 4.5V

1210pF @ 15V

±20V

-

2.5W (Ta)

10 mOhm @ 13A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

8-SO

8-SOIC (0.154", 3.90mm Width)

ZXMP6A16KTC

Diodes Incorporated

MOSFET P-CH 60V DPAK

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1021pF @ 30V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 2.11W (Ta)
Rds On (Max) @ Id, Vgs: 85 mOhm @ 2.9A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: TO-252-3
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存256,128

MOSFET (Metal Oxide)

60V

5.4A (Ta)

10V

1V @ 250µA

24.2nC @ 10V

1021pF @ 30V

±20V

-

2.11W (Ta)

85 mOhm @ 2.9A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-3

TO-252-3, DPak (2 Leads + Tab), SC-63

STD16NF06LT4

STMicroelectronics

MOSFET N-CH 60V 24A DPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 370pF @ 25V
Vgs (Max): ±18V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 70 mOhm @ 8A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: D-Pak
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存744,252

MOSFET (Metal Oxide)

60V

24A (Tc)

5V, 10V

1V @ 250µA

7.5nC @ 5V

370pF @ 25V

±18V

-

40W (Tc)

70 mOhm @ 8A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

D-Pak

TO-252-3, DPak (2 Leads + Tab), SC-63

PJA3438-AU_R1_000A1

Panjit International Inc.

SOT-23, MOSFET

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 50 V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

库存14,559

MOSFET (Metal Oxide)

50 V

500mA (Ta)

1.8V, 10V

1V @ 250µA

0.95 nC @ 4.5 V

36 pF @ 25 V

±20V

-

500mW (Ta)

1.45Ohm @ 500mA, 10V

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23

TO-236-3, SC-59, SOT-23-3

64-4095PBF

Infineon Technologies

MOSFET N-CH SMD D2PAK

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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IRFP4332PBFXKMA1

Infineon Technologies

TRENCH >=100V

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 25 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 360W (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 35A, 10V
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-247AC
Package / Case: TO-247-3

封装: -

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MOSFET (Metal Oxide)

250 V

57A (Tc)

10V

5V @ 250µA

150 nC @ 10 V

5860 pF @ 25 V

±30V

-

360W (Tc)

33mOhm @ 35A, 10V

-40°C ~ 175°C (TJ)

Through Hole

TO-247AC

TO-247-3

MTD3N25E1-MO

Motorola

TRANS MOSFET N-CH 250V 3A 3PIN(2

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 250 V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: DPAK-3
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

250 V

3A (Tc)

10V

4V @ 250µA

15 nC @ 10 V

430 pF @ 25 V

±20V

-

40W (Tc)

1.4Ohm @ 1.5A, 10V

-55°C ~ 150°C (TJ)

Surface Mount

DPAK-3

TO-252-3, DPAK (2 Leads + Tab), SC-63

IRF9532

Harris Corporation

P-CHANNEL POWER MOSFET

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 100 V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Vgs (Max): ±20V
FET Feature: -
Power Dissipation (Max): 75W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 6.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220AB
Package / Case: TO-220-3

封装: -

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MOSFET (Metal Oxide)

100 V

10A (Tc)

10V

4V @ 250µA

45 nC @ 10 V

500 pF @ 25 V

±20V

-

75W (Tc)

400mOhm @ 6.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220AB

TO-220-3

NTMJS0D9N04CTWG

onsemi

MOSFET N-CH 40V 52A/342A 8LFPAK

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 342A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 117 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7400 pF @ 20 V
Vgs (Max): 20V
FET Feature: -
Power Dissipation (Max): 4.2W (Ta), 180W (Tc)
Rds On (Max) @ Id, Vgs: 0.81mOhm @ 50A, 10V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-LFPAK
Package / Case: SOT-1205, 8-LFPAK56

封装: -

库存9,000

MOSFET (Metal Oxide)

40 V

52A (Ta), 342A (Tc)

10V

4V @ 250µA

117 nC @ 10 V

7400 pF @ 20 V

20V

-

4.2W (Ta), 180W (Tc)

0.81mOhm @ 50A, 10V

-55°C ~ 175°C (TJ)

Surface Mount

8-LFPAK

SOT-1205, 8-LFPAK56

2SJ646-TL-E

Sanyo

2SJ646 - P-CHANNEL SILICON MOSFE

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

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FBG04N30BC

EPC Space, LLC

GAN FET HEMT 40V30A COTS 4FSMD-B

FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs(th) (Max) @ Id: 2.5V @ 9mA
Gate Charge (Qg) (Max) @ Vgs: 11.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 20 V
Vgs (Max): +6V, -4V
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: 9mOhm @ 30A, 5V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 4-SMD
Package / Case: 4-SMD, No Lead

封装: -

库存423

GaNFET (Gallium Nitride)

40 V

30A (Tc)

5V

2.5V @ 9mA

11.4 nC @ 5 V

1300 pF @ 20 V

+6V, -4V

-

9mOhm @ 30A, 5V

-55°C ~ 150°C (TJ)

Surface Mount

4-SMD

4-SMD, No Lead

IPD26DP06NMSAUMA1

Infineon Technologies

MOSFET P-CH 60V TO252-3

FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 60 V
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: PG-TO252-3-313
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

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MOSFET (Metal Oxide)

60 V

-

Surface Mount

PG-TO252-3-313

TO-252-3, DPAK (2 Leads + Tab), SC-63

MSJPF20N65-BP

Micro Commercial Co

MOSFET N-CH 650V 11A TO220F

FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 901 pF @ 50 V
Vgs (Max): ±30V
FET Feature: -
Power Dissipation (Max): 31.3W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Supplier Device Package: TO-220F
Package / Case: TO-220-3 Full Pack

封装: -

库存15,000

MOSFET (Metal Oxide)

650 V

20A (Tc)

10V

4V @ 250µA

21 nC @ 10 V

901 pF @ 50 V

±30V

-

31.3W (Tc)

380mOhm @ 5.5A, 10V

-55°C ~ 150°C (TJ)

Through Hole

TO-220F

TO-220-3 Full Pack

IPW60R145CFD7XKSA1

Infineon Technologies

MOSFET HIGH POWER

FET Type: -
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: Surface Mount
Supplier Device Package: -
Package / Case: -

封装: -

库存42

MOSFET (Metal Oxide)

-

16A (Tc)

-

Surface Mount

-

MMFT2955ET1G

onsemi

MOSFET POWER 1A 60V SOT-223

FET Type: -
Technology: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Drive Voltage (Max Rds On, Min Rds On): -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Vgs (Max): -
FET Feature: -
Power Dissipation (Max): -
Rds On (Max) @ Id, Vgs: -
Operating Temperature: -
Mounting Type: -
Supplier Device Package: -
Package / Case: -

封装: -

Request a Quote

-