晶体管 - FET，MOSFET - 单

IPB77N06S212ATMA1

Infineon Technologies

MOSFET N-CH 55V 77A TO263-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 93µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1770pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 158W (Tc)
• Rds On (Max) @ Id, Vgs: 11.7 mOhm @ 38A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO263-3-2
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

AOT10N60_001

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 10A TO-220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1600pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 250W (Tc)
• Rds On (Max) @ Id, Vgs: 750 mOhm @ 5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220-3
• Package / Case: TO-220-3

封装: TO-220-3

DMN4015LK3-13

Diodes Incorporated

MOSFET N-CH 40V 13.5A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2072pF @ 20V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.19W (Ta)
• Rds On (Max) @ Id, Vgs: 15 mOhm @ 14A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

FDMS2510SDC

Fairchild/ON Semiconductor

MOSFET N-CH 25V 28A POWER56

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2780pF @ 13V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta), 60W (Tc)
• Rds On (Max) @ Id, Vgs: 2.9 mOhm @ 23A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: Dual Cool?56
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IRFU120ATU

Fairchild/ON Semiconductor

MOSFET N-CH 100V 8.4A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 32W (Tc)
• Rds On (Max) @ Id, Vgs: 200 mOhm @ 4.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

DMS2220LFW-7

Diodes Incorporated

MOSFET P-CH 20V 2.9A 8-DFN

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 1.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 632pF @ 10V
• Vgs (Max): ±12V
• FET Feature: Schottky Diode (Isolated)
• Power Dissipation (Max): 1.5W (Ta)
• Rds On (Max) @ Id, Vgs: 95 mOhm @ 2.8A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN3020 (3x2)
• Package / Case: 8-VDFN Exposed Pad

封装: 8-VDFN Exposed Pad

SI1046R-T1-GE3

Vishay Siliconix

MOSFET N-CH 20V 0.606A SC75-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 1.49nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 66pF @ 10V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 250mW (Ta)
• Rds On (Max) @ Id, Vgs: 420 mOhm @ 606mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SC-75A
• Package / Case: SC-75A

封装: SC-75A

APTM120SK68T1G

Microsemi Corporation

MOSFET N-CH 1200V 15A SP1

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1200V
• Current - Continuous Drain (Id) @ 25°C: 15A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 2.5mA
• Gate Charge (Qg) (Max) @ Vgs: 260nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6696pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 816 mOhm @ 12A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SP1
• Package / Case: SP1

封装: SP1

NTD50N03RT4

ON Semiconductor

MOSFET N-CH 25V 7.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta), 45A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15nC @ 11.5V
• Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.5W (Ta), 50W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 30A, 11.5V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DPAK
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

2SK2701A

Sanken

MOSFET N-CH 450V TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 1µA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 720pF @ 10V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 3.5A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

TK7A45DA(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 450V 6.5A TO-220SIS

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 450V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.4V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 540pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 35W (Tc)
• Rds On (Max) @ Id, Vgs: 1.2 Ohm @ 3.3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220SIS
• Package / Case: TO-220-3 Full Pack

封装: TO-220-3 Full Pack

SQ4410EY-T1_GE3

Vishay Siliconix

MOSFET N-CH 30V 15A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2385pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 5W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRF730BPBF

Vishay Siliconix

MOSFET N-CH 400V 5.5A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 400V
• Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 311pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 1 Ohm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

NVTFS5C670NLWFTAG

ON Semiconductor

MOSFET N-CH 60V U8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 70A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 63W (Tc)
• Rds On (Max) @ Id, Vgs: 6.8 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WDFN (3.3x3.3)
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

STD13NM50N

STMicroelectronics

MOSFET N-CH 500V DPAK

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

BUK9840-55/CUX

Nexperia USA Inc.

MOSFET N-CH 55V 5A SOT223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 10.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 2V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 8.3W (Tc)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 5A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

SQJ457EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 60V 36A SO8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 25 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

FDMA6676PZ

Fairchild/ON Semiconductor

MOSFET P-CH 30V 11A

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.6V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2160pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta)
• Rds On (Max) @ Id, Vgs: 13.5 mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-MicroFET (2x2)
• Package / Case: 6-PowerWDFN

封装: 6-PowerWDFN

STN4NF20L

STMicroelectronics

MOSFET N-CH 200V 1A SOT-223

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Tc)
• Rds On (Max) @ Id, Vgs: 1.5 Ohm @ 500mA, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-223
• Package / Case: TO-261-4, TO-261AA

封装: TO-261-4, TO-261AA

STW54NM65ND

STMicroelectronics

MOSFET N-CH 650V 59A TO-247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650V
• Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 188nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 6200pF @ 50V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 350W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 24.5A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247-3
• Package / Case: TO-247-3

封装: TO-247-3

CSD17576Q5B

Texas Instruments

MOSFET N-CH 30V 100A 8VSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 68nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4430pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
• Rds On (Max) @ Id, Vgs: 2 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-VSON (5x6)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

SIR788DP-T1-GE3

Vishay Siliconix

MOSFET N-CH 30V 60A PPAK SO-8

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 75nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2873pF @ 15V
• Vgs (Max): ±20V
• FET Feature: Schottky Diode (Body)
• Power Dissipation (Max): 5W (Ta), 48W (Tc)
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK? SO-8
• Package / Case: PowerPAK? SO-8

封装: PowerPAK? SO-8

IRFZ44VZPBF

Infineon Technologies

MOSFET N-CH 60V 57A TO-220AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 65nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1690pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 92W (Tc)
• Rds On (Max) @ Id, Vgs: 12 mOhm @ 34A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

BSS138LT3G

ON Semiconductor

MOSFET N-CH 50V 200MA SOT-23

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 50V
• Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 5V
• Vgs(th) (Max) @ Id: 1.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 225mW (Ta)
• Rds On (Max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23-3 (TO-236)
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

DMN2310UT-13

Diodes Incorporated

MOSFET BVDSS: 8V~24V SOT523 T&R

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
• Vgs(th) (Max) @ Id: 950mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 290mW (Ta)
• Rds On (Max) @ Id, Vgs: 240mOhm @ 300mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-523
• Package / Case: SOT-523

封装: -

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AOSP32314

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 14.5A 8SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.25V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 9mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -

SI2319-TP

Micro Commercial Co

MOSFET

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 3.5A
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 13.1 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 548 pF @ 20 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.25W
• Rds On (Max) @ Id, Vgs: 85mOhm @ 3A, 10V
• Operating Temperature: -55°C ~ 150°C
• Mounting Type: Surface Mount
• Supplier Device Package: SOT-23
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

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UPA507TE-T1-AT

Renesas Electronics Corporation

P-CHANNEL MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

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MSJP14N65A-BP

Micro Commercial Co

MOSFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 14A
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 30 V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 147W
• Rds On (Max) @ Id, Vgs: 310mOhm @ 4.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB (H)
• Package / Case: TO-220-3

封装: -

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IRFB3306PBFXKMA1

Infineon Technologies

TRENCH 40<-<100V

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -