晶体管 - FET，MOSFET - 单

SPI80N06S-08

Infineon Technologies

MOSFET N-CH 55V 80A I2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 240µA
• Gate Charge (Qg) (Max) @ Vgs: 187nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3660pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 80A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO262-3-1
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

NTLJS3A18PZTWG

ON Semiconductor

MOSFET P-CH 20V 8.4A WDFN6

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 28nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2240pF @ 15V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 18 mOhm @ 7A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-WDFN (2x2)
• Package / Case: 6-WDFN Exposed Pad

封装: 6-WDFN Exposed Pad

RJK2057DPA-00#J0

Renesas Electronics America

MOSFET N-CH 200V 20A WPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1250pF @ 25V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 30W (Tc)
• Rds On (Max) @ Id, Vgs: 85 mOhm @ 10A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-WPAK
• Package / Case: 8-PowerWDFN

封装: 8-PowerWDFN

SUD50N025-06P-E3

Vishay Siliconix

MOSFET N-CH 25V 78A TO252

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 66nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2490pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 10.7W (Ta), 65W (Tc)
• Rds On (Max) @ Id, Vgs: 6.2 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SI4660DY-T1-E3

Vishay Siliconix

MOSFET N-CH 25V 23.1A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 23.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 45nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2410pF @ 15V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta), 5.6W (Tc)
• Rds On (Max) @ Id, Vgs: 5.8 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

NTD4865N-1G

ON Semiconductor

MOSFET N-CH 25V 8.5A IPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 44A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 10.8nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.27W (Ta), 33.3W (Tc)
• Rds On (Max) @ Id, Vgs: 10.9 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: I-Pak
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

PH8030L,115

NXP

MOSFET N-CH 30V 76.7A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 76.7A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.15V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 15.2nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 12V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 62.5W (Tc)
• Rds On (Max) @ Id, Vgs: 5.9 mOhm @ 25A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

封装: SC-100, SOT-669

ZXMN10A11K

Diodes Incorporated

MOSFET N-CH 100V 2.4A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 5.4nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 274pF @ 50V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.11W (Ta)
• Rds On (Max) @ Id, Vgs: 350 mOhm @ 2.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

IXFR12N100

IXYS

MOSFET N-CH 1000V 10A ISOPLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 1000V
• Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 5.5V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 90nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 25V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 6A, 10V
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: ISOPLUS247?
• Package / Case: ISOPLUS247?

封装: ISOPLUS247?

PSMN3R7-30YLC,115

NXP

MOSFET N-CH 30V 100A LFPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 1.95V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1848pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 79W (Tc)
• Rds On (Max) @ Id, Vgs: 3.95 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: LFPAK56, Power-SO8
• Package / Case: SC-100, SOT-669

封装: SC-100, SOT-669

AOWF15S60

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 15A TO262F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 15.6nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 717pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 27.8W (Tc)
• Rds On (Max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: -
• Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

IRFR224TRLPBF

Vishay Siliconix

MOSFET N-CH 250V 3.8A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 14nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 260pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
• Rds On (Max) @ Id, Vgs: 1.1 Ohm @ 2.3A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D-Pak
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

AOB409L

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 60V 5A TO263

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 31.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.1W (Ta), 83.3W (Tc)
• Rds On (Max) @ Id, Vgs: 38 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2Pak)
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SI4178DY-T1-E3

Vishay Siliconix

MOSFET N-CH 30V 12A 8SO

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.8V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 15V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 2.4W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 21 mOhm @ 8.4A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

STP260N4F7

STMicroelectronics

N-CHANNEL 40 V 21 MOHM TYP. 120

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 67nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5600pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 235W (Tc)
• Rds On (Max) @ Id, Vgs: 2.2 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220
• Package / Case: TO-220-3

封装: TO-220-3

R6030KNX

Rohm Semiconductor

NCH 600V 30A POWER MOSFET, TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2350pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 86W (Tc)
• Rds On (Max) @ Id, Vgs: 130 mOhm @ 14.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-2 Full Pack

封装: TO-220-2 Full Pack

DMNH6008SPS-13

Diodes Incorporated

MOSFET N-CH 60V 16.5A POWERDI

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta), 88A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 40.1nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2597pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.3W (Ta)
• Rds On (Max) @ Id, Vgs: 8 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI5060-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

SI3447CDV-T1-E3

Vishay Siliconix

MOSFET P-CH 12V 7.8A 6TSOP

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 12V
• Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30nC @ 8V
• Input Capacitance (Ciss) (Max) @ Vds: 910pF @ 6V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 2W (Ta), 3W (Tc)
• Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 6-TSOP
• Package / Case: SOT-23-6 Thin, TSOT-23-6

封装: SOT-23-6 Thin, TSOT-23-6

SIHG47N60E-E3

Vishay Siliconix

MOSFET N-CH 600V 47A TO247AC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 220nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 9620pF @ 100V
• Vgs (Max): ±30V
• FET Feature: -
• Power Dissipation (Max): 357W (Tc)
• Rds On (Max) @ Id, Vgs: 64 mOhm @ 24A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-247AC
• Package / Case: TO-247-3

封装: TO-247-3

IXFN300N20X3

IXYS

MOSFET N-CH 200V 300A SOT227B

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200 V
• Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4.5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 375 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 23800 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 695W (Tc)
• Rds On (Max) @ Id, Vgs: 3.5mOhm @ 150A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227B
• Package / Case: SOT-227-4, miniBLOC

封装: -

IPP050N10NF2SAKMA1

Infineon Technologies

TRENCH >=100V

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 110A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
• Vgs(th) (Max) @ Id: 3.8V @ 84µA
• Gate Charge (Qg) (Max) @ Vgs: 76 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 150W (Tc)
• Rds On (Max) @ Id, Vgs: 5mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PG-TO220-3
• Package / Case: TO-220-3

封装: -

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MSC015SMA070J

Microchip Technology

MOSFET SIC 700 V 15 MOHM SOT-227

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 700 V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227 (ISOTOP®)
• Package / Case: SOT-227-4, miniBLOC

封装: -

Request a Quote

MMDF2N05ZR2

onsemi

SMALL SIGNAL N-CHANNEL MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

Request a Quote

IPD95R450PFD7ATMA1

Infineon Technologies

MOSFET N-CH 950V 13.3A TO252-3

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 950 V
• Current - Continuous Drain (Id) @ 25°C: 13.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 360µA
• Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 400 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 104W (Tc)
• Rds On (Max) @ Id, Vgs: 450mOhm @ 7.2A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TO252-3
• Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63

封装: -

NVMFSC0D9N04C

onsemi

MOSFET N-CH 40V 48.9A/313A 8DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40 V
• Current - Continuous Drain (Id) @ 25°C: 48.9A (Ta), 313A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 6100 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 4.1W (Ta), 166W (Tc)
• Rds On (Max) @ Id, Vgs: 0.87mOhm @ 50A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-DFN (5x6.15)
• Package / Case: 8-PowerVDFN

封装: -

NX6008NBKR

Nexperia USA Inc.

NX6008NBK/SOT23/TO-236AB

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 270mA (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 900mV @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 27 pF @ 30 V
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 270mW (Ta), 1.3W (Tc)
• Rds On (Max) @ Id, Vgs: 2.8Ohm @ 300mA, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-236AB
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: -

NVMFWS3D6N10MCLT1G

onsemi

PTNG 100V LL NCH SO-8FL WETTABLE

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 132A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 270µA
• Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 4411 pF @ 50 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.2W (Ta), 139W (Tc)
• Rds On (Max) @ Id, Vgs: 3.6mOhm @ 48A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: -

NVMFWS020N06CT1G

onsemi

MOSFET N-CH 60V 9A/28A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 20µA
• Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
• Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN, 5 Leads

封装: -

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MCB60I1200TZ

IXYS

1200V 90A SIC POWER MOSFET

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 4V @ 15mA
• Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 1000 V
• Vgs (Max): +20V, -5V
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 34mOhm @ 50A, 20V
• Operating Temperature: -40°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-268AA (D3Pak-HV)
• Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

封装: -

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AOSP21321

Alpha & Omega Semiconductor Inc.

MOSFET P-CH 30V 11A 8SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
• Vgs (Max): ±25V
• FET Feature: -
• Power Dissipation (Max): 3.1W (Ta)
• Rds On (Max) @ Id, Vgs: 17mOhm @ 11A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SOIC
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: -