晶体管 - FET，MOSFET - 单

SPD30N06S2-15

Infineon Technologies

MOSFET N-CH 55V 30A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 55V
• Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 80µA
• Gate Charge (Qg) (Max) @ Vgs: 52nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2070pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 136W (Tc)
• Rds On (Max) @ Id, Vgs: 14.7 mOhm @ 30A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: P-TO252-3
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

SSM3K309T(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET N-CH 20V 4.7A TSM

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 700mW (Ta)
• Rds On (Max) @ Id, Vgs: 31 mOhm @ 4A, 4V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TSM
• Package / Case: TO-236-3, SC-59, SOT-23-3

封装: TO-236-3, SC-59, SOT-23-3

SI9434BDY-T1-E3

Vishay Siliconix

MOSFET P-CH 20V 4.5A 8-SOIC

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20V
• Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): ±8V
• FET Feature: -
• Power Dissipation (Max): 1.3W (Ta)
• Rds On (Max) @ Id, Vgs: 40 mOhm @ 6.3A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

IRF9640

Vishay Siliconix

MOSFET P-CH 200V 11A TO-220AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 44nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1200pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 500 mOhm @ 6.6A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

IRF9630

Vishay Siliconix

MOSFET P-CH 200V 6.5A TO-220AB

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 800 mOhm @ 3.9A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

STB40NS15T4

STMicroelectronics

MOSFET N-CH 150V 40A D2PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 150V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2420pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 300W (Tc)
• Rds On (Max) @ Id, Vgs: 52 mOhm @ 20A, 10V
• Operating Temperature: -65°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: D2PAK
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

IXFX32N50

IXYS

MOSFET N-CH 500V 32A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 500V
• Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 4V @ 4mA
• Gate Charge (Qg) (Max) @ Vgs: 300nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 5450pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 360W (Tc)
• Rds On (Max) @ Id, Vgs: 150 mOhm @ 15A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3

RJK0603DPN-E0#T2

Renesas Electronics America

MOSFET N-CH 60V 80A TO220

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: 57nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4150pF @ 10V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 125W (Tc)
• Rds On (Max) @ Id, Vgs: 5.2 mOhm @ 40A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220AB
• Package / Case: TO-220-3

封装: TO-220-3

NVMFS6B05NLWFT3G

ON Semiconductor

MOSFET N-CH 100V 17A 5DFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 3980pF @ 25V
• Vgs (Max): ±16V
• FET Feature: -
• Power Dissipation (Max): 3.8W (Ta), 165W (Tc)
• Rds On (Max) @ Id, Vgs: 5.6 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

IRLU110

Vishay Siliconix

MOSFET N-CH 100V 4.3A I-PAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 100V
• Current - Continuous Drain (Id) @ 25°C: 4.3A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
• Vgs(th) (Max) @ Id: 2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 6.1nC @ 5V
• Input Capacitance (Ciss) (Max) @ Vds: 250pF @ 25V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
• Rds On (Max) @ Id, Vgs: 540 mOhm @ 2.6A, 5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-251AA
• Package / Case: TO-251-3 Short Leads, IPak, TO-251AA

封装: TO-251-3 Short Leads, IPak, TO-251AA

NTMFS4965NFT3G

ON Semiconductor

MOSFET N-CH 30V 65A SO8FL

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 65A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.3V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 30.5nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2100pF @ 15V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 30A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 5-DFN (5x6) (8-SOFL)
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

AO4306

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 30V 13A 8SOIC

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

TK39J60W,S1VQ

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 38.8A TO-3P

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600V
• Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 3.7V @ 1.9mA
• Gate Charge (Qg) (Max) @ Vgs: 110nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 4100pF @ 300V
• Vgs (Max): ±30V
• FET Feature: Super Junction
• Power Dissipation (Max): 270W (Tc)
• Rds On (Max) @ Id, Vgs: 65 mOhm @ 19.4A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-3P(N)
• Package / Case: TO-3P-3, SC-65-3

封装: TO-3P-3, SC-65-3

IXFX180N25T

IXYS

MOSFET N-CH 250V 180A PLUS247

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 250V
• Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 8mA
• Gate Charge (Qg) (Max) @ Vgs: 345nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 28000pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1390W (Tc)
• Rds On (Max) @ Id, Vgs: 12.9 mOhm @ 60A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: PLUS247?-3
• Package / Case: TO-247-3

封装: TO-247-3

IRF6785MTRPBF

Infineon Technologies

MOSFET N-CH 200V 3.4A DIRECTFET

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 200V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), 19A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 100µA
• Gate Charge (Qg) (Max) @ Vgs: 36nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.8W (Ta), 57W (Tc)
• Rds On (Max) @ Id, Vgs: 100 mOhm @ 4.2A, 10V
• Operating Temperature: -40°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: DIRECTFET? MZ
• Package / Case: DirectFET? Isometric MZ

封装: DirectFET? Isometric MZ

IPZ40N04S53R1ATMA1

Infineon Technologies

MOSFET N-CH 8TDSON

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 40V
• Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
• Vgs(th) (Max) @ Id: 3.4V @ 30µA
• Gate Charge (Qg) (Max) @ Vgs: 41nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2310pF @ 25V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 71W (Tc)
• Rds On (Max) @ Id, Vgs: 3.1 mOhm @ 20A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PG-TSDSON-8
• Package / Case: 8-PowerTDFN

封装: 8-PowerTDFN

SI4666DY-T1-GE3

Vishay Siliconix

MOSFET N-CH 25V 16.5A 8-SOIC

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 25V
• Current - Continuous Drain (Id) @ 25°C: 16.5A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
• Vgs(th) (Max) @ Id: 1.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 34nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1145pF @ 10V
• Vgs (Max): ±12V
• FET Feature: -
• Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
• Rds On (Max) @ Id, Vgs: 10 mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: 8-SO
• Package / Case: 8-SOIC (0.154", 3.90mm Width)

封装: 8-SOIC (0.154", 3.90mm Width)

FDD8896

Fairchild/ON Semiconductor

MOSFET N-CH 30V 94A DPAK

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30V
• Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 60nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 2525pF @ 15V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 80W (Tc)
• Rds On (Max) @ Id, Vgs: 5.7 mOhm @ 35A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252AA
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

DMPH6050SK3-13

Diodes Incorporated

MOSFET P-CH 60V 7.2A DPAK

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60V
• Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 23.6A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds: 1377pF @ 30V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 1.9W (Ta)
• Rds On (Max) @ Id, Vgs: 50 mOhm @ 7A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-252, (D-Pak)
• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

E3M0013120K

Wolfspeed, Inc.

SIC, MOSFET

• FET Type: -
• Technology: -
• Drain to Source Voltage (Vdss): -
• Current - Continuous Drain (Id) @ 25°C: -
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: -
• Supplier Device Package: -
• Package / Case: -

封装: -

Request a Quote

DMT68M8LFV-13

Diodes Incorporated

MOSFET N-CH 60V 54.1A PWRDI3333

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 60 V
• Current - Continuous Drain (Id) @ 25°C: 54.1A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 3V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 2078 pF @ 30 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 2.7W (Ta), 41.7W (Tc)
• Rds On (Max) @ Id, Vgs: 9.5mOhm @ 13.5A, 10V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerDI3333-8 (Type UX)
• Package / Case: 8-PowerVDFN

封装: -

Request a Quote

SQM120N02-1M3L_GE3

Vishay Siliconix

MOSFET N-CH 20V 120A TO263

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 290 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 14500 pF @ 10 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 375W (Tc)
• Rds On (Max) @ Id, Vgs: 1.3mOhm @ 40A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263 (D2PAK)
• Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

封装: -

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MSC040SMA120J

Microchip Technology

SICFET N-CH 1200V 53A SOT227

• FET Type: N-Channel
• Technology: SiCFET (Silicon Carbide)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 20V
• Vgs(th) (Max) @ Id: 2.8V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 20 V
• Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 1000 V
• Vgs (Max): +25V, -10V
• FET Feature: -
• Power Dissipation (Max): 208W (Tc)
• Rds On (Max) @ Id, Vgs: 50mOhm @ 40A, 20V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Chassis Mount
• Supplier Device Package: SOT-227 (ISOTOP®)
• Package / Case: SOT-227-4, miniBLOC

封装: -

DMP2042UCP4-7

Diodes Incorporated

MOSFET BVDSS: 8V~24V X1-DSN1010-

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
• Vgs(th) (Max) @ Id: 1.2V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
• Vgs (Max): -6V
• FET Feature: -
• Power Dissipation (Max): 860mW (Ta)
• Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: X1-DSN1010-4 (Type C)
• Package / Case: 4-XFBGA

封装: -

G3R30MT12J-TR

GeneSiC Semiconductor

1200V 30M TO-263-7 G3R SIC MOSFE

• FET Type: N-Channel
• Technology: SiC (Silicon Carbide Junction Transistor)
• Drain to Source Voltage (Vdss): 1200 V
• Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
• Vgs(th) (Max) @ Id: 2.7V @ 24mA
• Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 15 V
• Input Capacitance (Ciss) (Max) @ Vds: 3863 pF @ 800 V
• Vgs (Max): +22V, -10V
• FET Feature: -
• Power Dissipation (Max): 408W (Tc)
• Rds On (Max) @ Id, Vgs: 34mOhm @ 45A, 18V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: TO-263-7
• Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

封装: -

R6524KNXC7G

Rohm Semiconductor

650V 24A TO-220FM, HIGH-SPEED SW

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 650 V
• Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 10V
• Vgs(th) (Max) @ Id: 5V @ 750µA
• Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 74W (Tc)
• Rds On (Max) @ Id, Vgs: 185mOhm @ 11.3A, 10V
• Operating Temperature: 150°C (TJ)
• Mounting Type: Through Hole
• Supplier Device Package: TO-220FM
• Package / Case: TO-220-3 Full Pack

封装: -

FCPF20N60ST

onsemi

MOSFET N-CH 600V 20A TO-220F

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 600 V
• Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: -
• Gate Charge (Qg) (Max) @ Vgs: -
• Input Capacitance (Ciss) (Max) @ Vds: -
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: -
• Operating Temperature: -
• Mounting Type: Through Hole
• Supplier Device Package: TO-220F-3
• Package / Case: TO-220-3 Full Pack

封装: -

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DMN2024UFDF-7

Diodes Incorporated

MOSFET N-CH 20V 7.1A 6UDFN

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 20 V
• Current - Continuous Drain (Id) @ 25°C: 7.1A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
• Vgs(th) (Max) @ Id: 1V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 647 pF @ 10 V
• Vgs (Max): ±10V
• FET Feature: -
• Power Dissipation (Max): 960mW (Ta)
• Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
• Operating Temperature: -55°C ~ 150°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: U-DFN2020-6 (Type F)
• Package / Case: 6-UDFN Exposed Pad

封装: -

SQJA81EP-T1_GE3

Vishay Siliconix

MOSFET P-CH 80V 46A PPAK SO-8

• FET Type: P-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 80 V
• Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
• Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
• Vgs(th) (Max) @ Id: 2.5V @ 250µA
• Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 5900 pF @ 25 V
• Vgs (Max): ±20V
• FET Feature: -
• Power Dissipation (Max): 68W (Tc)
• Rds On (Max) @ Id, Vgs: 17.3mOhm @ 10A, 10V
• Operating Temperature: -55°C ~ 175°C (TJ)
• Mounting Type: Surface Mount
• Supplier Device Package: PowerPAK® SO-8
• Package / Case: PowerPAK® SO-8

封装: -

UPA1809GR-9JG-E2-A

Renesas Electronics Corporation

MOSFET N-CH 30V 8A 8TSSOP

• FET Type: N-Channel
• Technology: MOSFET (Metal Oxide)
• Drain to Source Voltage (Vdss): 30 V
• Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
• Drive Voltage (Max Rds On, Min Rds On): -
• Vgs(th) (Max) @ Id: 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 10 V
• Vgs (Max): -
• FET Feature: -
• Power Dissipation (Max): -
• Rds On (Max) @ Id, Vgs: 21mOhm @ 4A, 10V
• Operating Temperature: -
• Mounting Type: Surface Mount
• Supplier Device Package: 8-TSSOP
• Package / Case: 8-TSSOP (0.173", 4.40mm Width)

封装: -

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