页 91 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  91/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTFB193408SVV1XWSA1
Infineon Technologies

IC FET RF LDMOS H-34275G-6/2

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.99GHz
  • Gain: 19dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.65A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: H-34275G-6/2
  • Supplier Device Package: H-34275G-6/2
封装: H-34275G-6/2
库存6,544
1.99GHz
19dB
30V
-
-
2.65A
80W
65V
H-34275G-6/2
H-34275G-6/2
PTVA035002EVV1XWSA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存3,216
-
-
-
-
-
-
-
-
-
-
BF244C_J35Z
Fairchild/ON Semiconductor

JFET N-CH 30V 50MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 50mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存4,304
100MHz
-
15V
50mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
MRF6S9060MBR1
NXP

FET RF 68V 880MHZ TO-272-2

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 21.4dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 450mA
  • Power - Output: 14W
  • Voltage - Rated: 68V
  • Package / Case: TO-272-2
  • Supplier Device Package: TO-272-2
封装: TO-272-2
库存3,024
880MHz
21.4dB
28V
-
-
450mA
14W
68V
TO-272-2
TO-272-2
BF245A,112
NXP

JFET N-CH 30V 6.5MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: 100MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 6.5mA
  • Noise Figure: 1.5dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存2,912
100MHz
-
15V
6.5mA
1.5dB
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BLF872,112
Ampleon USA Inc.

RF FET LDMOS 65V SOT800

  • Transistor Type: LDMOS
  • Frequency: -
  • Gain: -
  • Voltage - Test: 32V
  • Current Rating: 41A
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 65V
  • Package / Case: SOT800
  • Supplier Device Package: LDMOST
封装: SOT800
库存7,328
-
-
32V
41A
-
900mA
300W
65V
SOT800
LDMOST
BLF7G20LS-140P,112
Ampleon USA Inc.

RF FET LDMOS 65V 17DB SOT1121B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 17.5dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 850mA
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121B
  • Supplier Device Package: CDFM4
封装: SOT-1121B
库存5,840
1.81GHz ~ 1.88GHz
17.5dB
28V
-
-
850mA
60W
65V
SOT-1121B
CDFM4
PXAC180602MDV1R500XUMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存5,360
-
-
-
-
-
-
-
-
-
-
MRF6V4300NBR1
NXP

FET RF 110V 450MHZ TO-272-4

  • Transistor Type: LDMOS
  • Frequency: 450MHz
  • Gain: 22dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 900mA
  • Power - Output: 300W
  • Voltage - Rated: 110V
  • Package / Case: TO-272BB
  • Supplier Device Package: TO-272 WB-4
封装: TO-272BB
库存2,384
450MHz
22dB
50V
-
-
900mA
300W
110V
TO-272BB
TO-272 WB-4
BLF6G10L-40BRN,112
Ampleon USA Inc.

RF FET LDMOS 65V 23DB SOT1112A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 788.5MHz ~ 823.5MHz
  • Gain: 23dB
  • Voltage - Test: 28V
  • Current Rating: 11A
  • Noise Figure: -
  • Current - Test: 390mA
  • Power - Output: 2.5W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1112A
  • Supplier Device Package: CDFM6
封装: SOT-1112A
库存7,840
788.5MHz ~ 823.5MHz
23dB
28V
11A
-
390mA
2.5W
65V
SOT-1112A
CDFM6
CLF1G0035-100,112
Ampleon USA Inc.

RF FET HEMT 150V 12DB SOT467C

  • Transistor Type: HEMT
  • Frequency: 3GHz
  • Gain: 12dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 330mA
  • Power - Output: 100W
  • Voltage - Rated: 150V
  • Package / Case: SOT467C
  • Supplier Device Package: SOT467C
封装: SOT467C
库存3,808
3GHz
12dB
50V
-
-
330mA
100W
150V
SOT467C
SOT467C
BLF881S,112
Ampleon USA Inc.

RF FET LDMOS 104V 21DB SOT467B

  • Transistor Type: LDMOS
  • Frequency: 860MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 140W
  • Voltage - Rated: 104V
  • Package / Case: SOT467B
  • Supplier Device Package: LDMOST
封装: SOT467B
库存5,648
860MHz
21dB
50V
-
-
500mA
140W
104V
SOT467B
LDMOST
PD85015TR-E
STMicroelectronics

TRANS RF N-CH FET POWERSO-10RF

  • Transistor Type: LDMOS
  • Frequency: 870MHz
  • Gain: 16dB
  • Voltage - Test: 13.6V
  • Current Rating: 5A
  • Noise Figure: -
  • Current - Test: 150mA
  • Power - Output: 15W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
  • Supplier Device Package: PowerSO-10RF (Formed Lead)
封装: PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
库存6,976
870MHz
16dB
13.6V
5A
-
150mA
15W
40V
PowerSO-10RF Exposed Bottom Pad (2 Formed Leads)
PowerSO-10RF (Formed Lead)
PN5033
Central Semiconductor Corp

TRANSISTOR PNP TH

  • Transistor Type: P-Channel
  • Frequency: 1kHz
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: 2dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 20V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: TO-226-3, TO-92-3 (TO-226AA)
库存24,114
1kHz
-
-
-
2dB
-
-
20V
TO-226-3, TO-92-3 (TO-226AA)
TO-92
BLF6G10LS-200RN,11
Ampleon USA Inc.

RF FET LDMOS 65V 20DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 871.5MHz ~ 891.5MHz
  • Gain: 20dB
  • Voltage - Test: 28V
  • Current Rating: 49A
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 40W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: SOT-502B
库存4,400
871.5MHz ~ 891.5MHz
20dB
28V
49A
-
1.4A
40W
65V
SOT-502B
SOT502B
hot MMBF5486
Fairchild/ON Semiconductor

JFET N-CH 25V 20MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: 400MHz
  • Gain: -
  • Voltage - Test: 15V
  • Current Rating: 20mA
  • Noise Figure: 4dB
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存72,000
400MHz
-
15V
20mA
4dB
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot MRFE6VP5600HR5
NXP

FET RF 2CH 130V 230MHZ NI1230

  • Transistor Type: LDMOS (Dual)
  • Frequency: 230MHz
  • Gain: 25dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 600W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230
  • Supplier Device Package: NI-1230
封装: NI-1230
库存3,504
230MHz
25dB
50V
-
-
100mA
600W
130V
NI-1230
NI-1230
ICPB2002-1-110I
Microchip Technology

DC-12 GHZ 12W DISCRETE GAN HEMT

  • Transistor Type: GaN HEMT
  • Frequency: 12GHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 1A
  • Noise Figure: -
  • Current - Test: 125 mA
  • Power - Output: 12W
  • Voltage - Rated: 28 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
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12GHz
10dB
28 V
1A
-
125 mA
12W
28 V
Die
Die
IGN0912LM500
Integra Technologies Inc.

RF MOSFET

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存30
-
-
-
-
-
-
-
-
-
-
PTVA104501EH-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA030121EA-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
PTVA120501EA-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
RF4L15400CB4
STMicroelectronics

RF MOSFET LDMOS 40V D4E

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.5GHz
  • Gain: 18.5dB
  • Voltage - Test: 40 V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 1.5 A
  • Power - Output: 400W
  • Voltage - Rated: 90 V
  • Package / Case: D4E
  • Supplier Device Package: D4E
封装: -
Request a Quote
1.2GHz ~ 1.5GHz
18.5dB
40 V
1µA
-
1.5 A
400W
90 V
D4E
D4E
PTVA127002EV-V1-R0
MACOM Technology Solutions

RF MOSFET LDMOS 50V H-36275-4

  • Transistor Type: LDMOS
  • Frequency: 1.2GHz ~ 1.4GHz
  • Gain: 16dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 150 mA
  • Power - Output: 700W
  • Voltage - Rated: 105 V
  • Package / Case: H-36275-4
  • Supplier Device Package: H-36275-4
封装: -
库存291
1.2GHz ~ 1.4GHz
16dB
50 V
10µA
-
150 mA
700W
105 V
H-36275-4
H-36275-4
PXAC241702FC-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37248-4

  • Transistor Type: LDMOS
  • Frequency: 2.4GHz
  • Gain: 16.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 360 mA
  • Power - Output: 28W
  • Voltage - Rated: 65 V
  • Package / Case: H-37248-4
  • Supplier Device Package: H-37248-4
封装: -
Request a Quote
2.4GHz
16.5dB
28 V
-
-
360 mA
28W
65 V
H-37248-4
H-37248-4
BLC9H10XS-505AZ
Ampleon USA Inc.

RF MOSFET SOT1273-1

  • Transistor Type: -
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: -
  • Package / Case: SOT-1273-1
  • Supplier Device Package: SOT1273-1
封装: -
库存90
-
-
-
-
-
-
-
-
SOT-1273-1
SOT1273-1
BLP9LA25SGXY
Ampleon USA Inc.

RF MOSFET LDMOS 13.6V TO270

  • Transistor Type: LDMOS
  • Frequency: 941MHz
  • Gain: 18.4dB
  • Voltage - Test: 13.6 V
  • Current Rating: 1.4µA
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 25W
  • Voltage - Rated: 40 V
  • Package / Case: TO-270BA
  • Supplier Device Package: TO-270-2G-1
封装: -
Request a Quote
941MHz
18.4dB
13.6 V
1.4µA
-
500 mA
25W
40 V
TO-270BA
TO-270-2G-1
A3G23H500W17SR3
NXP

RF MOSFET GAN 48V NI780

  • Transistor Type: GaN
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 14.3dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 300 mA
  • Power - Output: 80W
  • Voltage - Rated: 125 V
  • Package / Case: NI-780-4S2S
  • Supplier Device Package: NI-780-4S2S
封装: -
Request a Quote
2.3GHz ~ 2.4GHz
14.3dB
48 V
-
-
300 mA
80W
125 V
NI-780-4S2S
NI-780-4S2S
UF28100V
MACOM Technology Solutions

RF MOSFET N-CHANNEL 28V 8L-FLG

  • Transistor Type: MOSFET (Metal Oxide)
  • Frequency: 100MHz ~ 500MHz
  • Gain: 10dB
  • Voltage - Test: 28 V
  • Current Rating: 12A
  • Noise Figure: -
  • Current - Test: 600 mA
  • Power - Output: 100W
  • Voltage - Rated: 65 V
  • Package / Case: 8L-FLG
  • Supplier Device Package: 8L-FLG
封装: -
Request a Quote
100MHz ~ 500MHz
10dB
28 V
12A
-
600 mA
100W
65 V
8L-FLG
8L-FLG
GTRA360502M-V1-R3K
MACOM Technology Solutions

RF MOSFET HEMT 48V 6DFN

  • Transistor Type: HEMT
  • Frequency: 3.4GHz ~ 3.8GHz
  • Gain: 13dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 25 mA
  • Power - Output: 50W
  • Voltage - Rated: 125 V
  • Package / Case: 6-VDFN Exposed Pad
  • Supplier Device Package: 6-DFN (6.5x7)
封装: -
Request a Quote
3.4GHz ~ 3.8GHz
13dB
48 V
-
-
25 mA
50W
125 V
6-VDFN Exposed Pad
6-DFN (6.5x7)