页 77 - 晶体管 - FET，MOSFET - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - FET，MOSFET - 射频

记录 3,855
页  77/129
图片
零件编号
制造商
描述
封装
库存
数量
Frequency
Gain
Voltage - Test
Current Rating
Noise Figure
Current - Test
Power - Output
Voltage - Rated
Package / Case
Supplier Device Package
PTF210451E V1
Infineon Technologies

IC FET RF LDMOS 45W H-30265-2

  • Transistor Type: LDMOS
  • Frequency: 2.17GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: 500mA
  • Power - Output: 45W
  • Voltage - Rated: 65V
  • Package / Case: 2-Flatpack, Fin Leads
  • Supplier Device Package: H-30265-2
封装: 2-Flatpack, Fin Leads
库存2,832
2.17GHz
14dB
28V
1µA
-
500mA
45W
65V
2-Flatpack, Fin Leads
H-30265-2
BLC9G27LS-150AVY
Ampleon USA Inc.

RF FET LDMOS 65V 15DB SOT12751

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.5GHz ~ 2.69GHz
  • Gain: 15dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 400mA
  • Power - Output: 150W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-1
  • Supplier Device Package: 6-DFM
封装: SOT1275-1
库存7,728
2.5GHz ~ 2.69GHz
15dB
28V
-
-
400mA
150W
65V
SOT1275-1
6-DFM
ARF441
Microsemi Corporation

PWR MOSFET RF N-CH 150V TO-247AD

  • Transistor Type: N-Channel
  • Frequency: 13.56MHz
  • Gain: 21dB
  • Voltage - Test: 50V
  • Current Rating: 11A
  • Noise Figure: -
  • Current - Test: 200mA
  • Power - Output: 125W
  • Voltage - Rated: 150V
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存4,608
13.56MHz
21dB
50V
11A
-
200mA
125W
150V
-
-
MRFE6VP8600HSR6
NXP

FET RF 2CH 130V 860MHZ NI1230S

  • Transistor Type: LDMOS (Dual)
  • Frequency: 860MHz
  • Gain: 19.3dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.4A
  • Power - Output: 125W
  • Voltage - Rated: 130V
  • Package / Case: NI-1230S
  • Supplier Device Package: NI-1230S
封装: NI-1230S
库存5,648
860MHz
19.3dB
50V
-
-
1.4A
125W
130V
NI-1230S
NI-1230S
BLF6G22LS-75,118
Ampleon USA Inc.

RF FET LDMOS 65V 18.7DB SOT502B

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 18.7dB
  • Voltage - Test: 28V
  • Current Rating: 18A
  • Noise Figure: -
  • Current - Test: 690mA
  • Power - Output: 17W
  • Voltage - Rated: 65V
  • Package / Case: SOT-502B
  • Supplier Device Package: SOT502B
封装: SOT-502B
库存4,256
2.11GHz ~ 2.17GHz
18.7dB
28V
18A
-
690mA
17W
65V
SOT-502B
SOT502B
CRF24060FE
Cree/Wolfspeed

FET RF 120V 1.1GHZ 440193

  • Transistor Type: Silicon Carbide MESFET
  • Frequency: 1.1GHz
  • Gain: 13dB
  • Voltage - Test: 48V
  • Current Rating: 9A
  • Noise Figure: -
  • Current - Test: 2A
  • Power - Output: 60W
  • Voltage - Rated: 120V
  • Package / Case: 440193
  • Supplier Device Package: 440193
封装: 440193
库存3,360
1.1GHz
13dB
48V
9A
-
2A
60W
120V
440193
440193
hot PD55003STR-E
STMicroelectronics

FET RF 40V 500MHZ PWRSO-10

  • Transistor Type: LDMOS
  • Frequency: 500MHz
  • Gain: 17dB
  • Voltage - Test: 12.5V
  • Current Rating: 2.5A
  • Noise Figure: -
  • Current - Test: 50mA
  • Power - Output: 3W
  • Voltage - Rated: 40V
  • Package / Case: PowerSO-10 Exposed Bottom Pad
  • Supplier Device Package: PowerSO-10RF (Straight Lead)
封装: PowerSO-10 Exposed Bottom Pad
库存28,692
500MHz
17dB
12.5V
2.5A
-
50mA
3W
40V
PowerSO-10 Exposed Bottom Pad
PowerSO-10RF (Straight Lead)
MRF281SR1
NXP

FET RF 65V 1.93GHZ NI-200S

  • Transistor Type: LDMOS
  • Frequency: 1.93GHz
  • Gain: 12.5dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 25mA
  • Power - Output: 4W
  • Voltage - Rated: 65V
  • Package / Case: NI-200S
  • Supplier Device Package: NI-200S
封装: NI-200S
库存4,848
1.93GHz
12.5dB
26V
-
-
25mA
4W
65V
NI-200S
NI-200S
hot MRF9135LSR3
NXP

FET RF 65V 880MHZ NI-780S

  • Transistor Type: LDMOS
  • Frequency: 880MHz
  • Gain: 17.8dB
  • Voltage - Test: 26V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.1A
  • Power - Output: 25W
  • Voltage - Rated: 65V
  • Package / Case: NI-780S
  • Supplier Device Package: NI-780S
封装: NI-780S
库存44,760
880MHz
17.8dB
26V
-
-
1.1A
25W
65V
NI-780S
NI-780S
ATF-36077-STR
Broadcom Limited

FET RF 3V 12GHZ 77-SMD

  • Transistor Type: pHEMT FET
  • Frequency: 12GHz
  • Gain: 12dB
  • Voltage - Test: 1.5V
  • Current Rating: 45mA
  • Noise Figure: 0.5dB
  • Current - Test: 10mA
  • Power - Output: 5dBm
  • Voltage - Rated: 3V
  • Package / Case: 4-SMD (77 Pack)
  • Supplier Device Package: 77
封装: 4-SMD (77 Pack)
库存2,080
12GHz
12dB
1.5V
45mA
0.5dB
10mA
5dBm
3V
4-SMD (77 Pack)
77
NE350184C
CEL

FET RF 4V 20GHZ MICRO-X

  • Transistor Type: HFET
  • Frequency: 20GHz
  • Gain: 13.5dB
  • Voltage - Test: 2V
  • Current Rating: 70mA
  • Noise Figure: 0.7dB
  • Current - Test: 10mA
  • Power - Output: -
  • Voltage - Rated: 4V
  • Package / Case: Micro-X ceramic (84C)
  • Supplier Device Package: 84C
封装: Micro-X ceramic (84C)
库存7,344
20GHz
13.5dB
2V
70mA
0.7dB
10mA
-
4V
Micro-X ceramic (84C)
84C
hot MMBFJ210
Fairchild/ON Semiconductor

JFET N-CH 25V 15MA SOT23

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 15mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 25V
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存904,920
-
-
-
15mA
-
-
-
25V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
hot BF256C
Fairchild/ON Semiconductor

JFET N-CH 30V 18MA TO92

  • Transistor Type: N-Channel JFET
  • Frequency: -
  • Gain: -
  • Voltage - Test: -
  • Current Rating: 18mA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: -
  • Voltage - Rated: 30V
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存23,400
-
-
-
18mA
-
-
-
30V
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
BF908,215
NXP

MOSFET N-CH 12V 40MA SOT143B

  • Transistor Type: N-Channel Dual Gate
  • Frequency: 200MHz
  • Gain: -
  • Voltage - Test: 8V
  • Current Rating: 40mA
  • Noise Figure: 0.6dB
  • Current - Test: 15mA
  • Power - Output: -
  • Voltage - Rated: 12V
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143B
封装: TO-253-4, TO-253AA
库存5,280
200MHz
-
8V
40mA
0.6dB
15mA
-
12V
TO-253-4, TO-253AA
SOT-143B
PTFB183404FV2R250XTMA1
Infineon Technologies

IC AMP RF LDMOS

  • Transistor Type: LDMOS
  • Frequency: 1.88GHz
  • Gain: 17dB
  • Voltage - Test: 30V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 2.6A
  • Power - Output: 80W
  • Voltage - Rated: 65V
  • Package / Case: H-37275-6/2
  • Supplier Device Package: H-37275-6/2
封装: H-37275-6/2
库存3,184
1.88GHz
17dB
30V
-
-
2.6A
80W
65V
H-37275-6/2
H-37275-6/2
AFV141KGSR5
NXP

IC TRANS RF LDMOS

  • Transistor Type: LDMOS (Dual)
  • Frequency: 1.4GHz
  • Gain: 17.7dB
  • Voltage - Test: 50V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 1000W
  • Voltage - Rated: 105V
  • Package / Case: NI-1230-4S GW
  • Supplier Device Package: NI-1230-4S Gull Wing
封装: NI-1230-4S GW
库存3,024
1.4GHz
17.7dB
50V
-
-
100mA
1000W
105V
NI-1230-4S GW
NI-1230-4S Gull Wing
MMRF1023HSR5
NXP

FET RF 65V 2.3GHZ NI-1230-4LS2L

  • Transistor Type: LDMOS
  • Frequency: 2.3GHz
  • Gain: 14.9dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 750mA
  • Power - Output: 66W
  • Voltage - Rated: 65V
  • Package / Case: NI-1230-4LS2L
  • Supplier Device Package: NI-1230-4LS2L
封装: NI-1230-4LS2L
库存2,624
2.3GHz
14.9dB
28V
-
-
750mA
66W
65V
NI-1230-4LS2L
NI-1230-4LS2L
BLF2324M8LS200PJ
Ampleon USA Inc.

RF FET LDMOS 65V 17.2DB SOT539B

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 2.3GHz ~ 2.4GHz
  • Gain: 17.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.74A
  • Power - Output: 60W
  • Voltage - Rated: 65V
  • Package / Case: SOT539B
  • Supplier Device Package: SOT539B
封装: SOT539B
库存4,096
2.3GHz ~ 2.4GHz
17.2dB
28V
-
-
1.74A
60W
65V
SOT539B
SOT539B
hot MRF6S27015NR1
NXP

FET RF 68V 2.6GHZ TO270-2

  • Transistor Type: LDMOS
  • Frequency: 2.6GHz
  • Gain: 14dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 160mA
  • Power - Output: 3W
  • Voltage - Rated: 68V
  • Package / Case: TO-270AA
  • Supplier Device Package: TO-270-2
封装: TO-270AA
库存10,080
2.6GHz
14dB
28V
-
-
160mA
3W
68V
TO-270AA
TO-270-2
BLC9G20LS-120VY
Ampleon USA Inc.

RF FET LDMOS 65V 19.2DB SOT12753

  • Transistor Type: LDMOS
  • Frequency: 1.81GHz ~ 1.88GHz
  • Gain: 19.2dB
  • Voltage - Test: 28V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 700mA
  • Power - Output: 120W
  • Voltage - Rated: 65V
  • Package / Case: SOT1275-3
  • Supplier Device Package: DFM6
封装: SOT1275-3
库存4,976
1.81GHz ~ 1.88GHz
19.2dB
28V
-
-
700mA
120W
65V
SOT1275-3
DFM6
BLF647P,112
Ampleon USA Inc.

RF FET LDMOS 65V 18DB SOT1121A

  • Transistor Type: LDMOS (Dual), Common Source
  • Frequency: 1.3GHz
  • Gain: 18dB
  • Voltage - Test: 32V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100mA
  • Power - Output: 200W
  • Voltage - Rated: 65V
  • Package / Case: SOT-1121A
  • Supplier Device Package: CDFM4
封装: SOT-1121A
库存8,556
1.3GHz
18dB
32V
-
-
100mA
200W
65V
SOT-1121A
CDFM4
PTFB182503FL-V2-R0
MACOM Technology Solutions

RF MOSFET 30V H-33288-6

  • Transistor Type: -
  • Frequency: 1.88GHz
  • Gain: 19dB
  • Voltage - Test: 30 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 1.85 A
  • Power - Output: 50W
  • Voltage - Rated: 65 V
  • Package / Case: H-33288-6
  • Supplier Device Package: H-33288-6
封装: -
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1.88GHz
19dB
30 V
-
-
1.85 A
50W
65 V
H-33288-6
H-33288-6
A5G35S004N-3400
NXP

RF MOSFET 48V 6DFN

  • Transistor Type: -
  • Frequency: 3.3GHz ~ 4.3GHz
  • Gain: 16.9dB
  • Voltage - Test: 48 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 12 mA
  • Power - Output: 24.5dBm
  • Voltage - Rated: 125 V
  • Package / Case: 6-LDFN Exposed Pad
  • Supplier Device Package: 6-PDFN (4x4.5)
封装: -
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3.3GHz ~ 4.3GHz
16.9dB
48 V
-
-
12 mA
24.5dBm
125 V
6-LDFN Exposed Pad
6-PDFN (4x4.5)
MWT-LN300
CML Microcircuits

RF MOSFET PHEMT FET 2.5V DIE

  • Transistor Type: pHEMT FET
  • Frequency: 26GHz
  • Gain: 10dB
  • Voltage - Test: 2.5 V
  • Current Rating: -
  • Noise Figure: 0.6dB
  • Current - Test: 25 mA
  • Power - Output: -
  • Voltage - Rated: 4 V
  • Package / Case: Die
  • Supplier Device Package: Die
封装: -
库存1,371
26GHz
10dB
2.5 V
-
0.6dB
25 mA
-
4 V
Die
Die
AFV10700GSR5
NXP

RF MOSFET LDMOS 50V NI780

  • Transistor Type: LDMOS
  • Frequency: 1.03GHz ~ 1.09GHz
  • Gain: 19.2dB
  • Voltage - Test: 50 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 700W
  • Voltage - Rated: 105 V
  • Package / Case: NI-780GS-4L
  • Supplier Device Package: NI-780GS-4L
封装: -
Request a Quote
1.03GHz ~ 1.09GHz
19.2dB
50 V
10µA
-
100 mA
700W
105 V
NI-780GS-4L
NI-780GS-4L
GTVA104001FA-V1-R0
MACOM Technology Solutions

RF MOSFET HEMT 50V H-37265J-2

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 19.5dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 100 mA
  • Power - Output: 400W
  • Voltage - Rated: 125 V
  • Package / Case: H-37265J-2
  • Supplier Device Package: H-37265J-2
封装: -
库存129
960MHz ~ 1.215GHz
19.5dB
50 V
-
-
100 mA
400W
125 V
H-37265J-2
H-37265J-2
CGH25120F
MACOM Technology Solutions

RF MOSFET HEMT 28V 440162

  • Transistor Type: HEMT
  • Frequency: 2.3GHz ~ 2.7GHz
  • Gain: 12.5dB
  • Voltage - Test: 28 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 500 mA
  • Power - Output: 130W
  • Voltage - Rated: 84 V
  • Package / Case: 440162
  • Supplier Device Package: 440162
封装: -
库存75
2.3GHz ~ 2.7GHz
12.5dB
28 V
-
-
500 mA
130W
84 V
440162
440162
0912GN-300V
Microchip Technology

RF MOSFET HEMT 50V 55-KR

  • Transistor Type: HEMT
  • Frequency: 960MHz ~ 1.215GHz
  • Gain: 18dB
  • Voltage - Test: 50 V
  • Current Rating: -
  • Noise Figure: -
  • Current - Test: 60 mA
  • Power - Output: 300W
  • Voltage - Rated: 150 V
  • Package / Case: 55-KR
  • Supplier Device Package: 55-KR
封装: -
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960MHz ~ 1.215GHz
18dB
50 V
-
-
60 mA
300W
150 V
55-KR
55-KR
RF2L16080CF2
STMicroelectronics

RF MOSFET LDMOS A2

  • Transistor Type: LDMOS
  • Frequency: 1.3GHz ~ 1.7GHz
  • Gain: 18dB
  • Voltage - Test: -
  • Current Rating: 1µA
  • Noise Figure: -
  • Current - Test: -
  • Power - Output: 80W
  • Voltage - Rated: 65 V
  • Package / Case: 2L-FLG
  • Supplier Device Package: A2
封装: -
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1.3GHz ~ 1.7GHz
18dB
-
1µA
-
-
80W
65 V
2L-FLG
A2
PTFB213208FV-V1-R250
MACOM Technology Solutions

RF MOSFET LDMOS 28V H-37275G-6

  • Transistor Type: LDMOS
  • Frequency: 2.11GHz ~ 2.17GHz
  • Gain: 17dB
  • Voltage - Test: 28 V
  • Current Rating: 10µA
  • Noise Figure: -
  • Current - Test: 2.6 A
  • Power - Output: 320W
  • Voltage - Rated: 65 V
  • Package / Case: H-37275G-6/2
  • Supplier Device Package: H-37275G-6/2
封装: -
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2.11GHz ~ 2.17GHz
17dB
28 V
10µA
-
2.6 A
320W
65 V
H-37275G-6/2
H-37275G-6/2