图片 |
零件编号 |
制造商 |
描述 |
封装 |
库存 |
数量 |
Frequency | Gain | Voltage - Test | Current Rating | Noise Figure | Current - Test | Power - Output | Voltage - Rated | Package / Case | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MOSFET N-CH 8V 40MA SOT-143
|
封装: TO-253-4, TO-253AA |
库存35,868 |
|
800MHz | 23dB | 5V | 40mA | 1.5dB | 10mA | - | 8V | TO-253-4, TO-253AA | PG-SOT143-4 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 19.2DB SOT608B
|
封装: SOT-608B |
库存4,064 |
|
1.8GHz ~ 1.88GHz | 19.2dB | 28V | 13A | - | 360mA | 2.5W | 65V | SOT-608B | CDFM2 |
||
NXP |
MOSFET RF SOT223 SC-73
|
封装: TO-261-4, TO-261AA |
库存2,992 |
|
- | - | - | - | - | - | - | - | TO-261-4, TO-261AA | SOT-223 |
||
NXP |
FET RF 65V 1.88GHZ NI-780S
|
封装: NI-780S |
库存3,264 |
|
1.81GHz ~ 1.88GHz | 15dB | 26V | - | - | 800mA | 85W | 65V | NI-780S | NI-780S |
||
NXP |
FET RF 8V 3.55GHZ PLD-1.5
|
封装: PLD-1.5 |
库存6,016 |
|
3.55GHz | 10dB | 6V | - | - | 65mA | 1.5W | 8V | PLD-1.5 | PLD-1.5 |
||
NXP |
FET RF 65V 860MHZ NI-860C
|
封装: NI-860C3 |
库存3,968 |
|
860MHz | 18.2dB | 32V | 17A | - | 2A | 45W | 65V | NI-860C3 | NI-860C3 |
||
Fairchild/ON Semiconductor |
JFET N-CH 25V 20MA TO92
|
封装: TO-226-3, TO-92-3 (TO-226AA) |
库存3,664 |
|
- | - | - | 20mA | - | - | - | 25V | TO-226-3, TO-92-3 (TO-226AA) | TO-92-3 |
||
NXP |
MOSFET N-CH 7V 40MA SOT343
|
封装: SC-82A, SOT-343 |
库存4,768 |
|
800MHz | - | 5V | 40mA | 2dB | 15mA | - | 7V | SC-82A, SOT-343 | CMPAK-4 |
||
Infineon Technologies |
IC AMP RF LDMOS
|
封装: - |
库存3,344 |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
FET RF 2CH 65V 2.9GHZ
|
封装: SOT-979A |
库存3,488 |
|
2.9GHz | 13.3dB | 30V | - | - | 100mA | 320W | 65V | SOT-979A | NI-1230-4H |
||
NXP |
FET RF 2CH 65V 2.11GHZ
|
封装: NI-1230S-4 GW |
库存2,816 |
|
2.11GHz | 16.4dB | 28V | - | - | 750mA | 63W | 65V | NI-1230S-4 GW | NI-1230S-4 GullWing |
||
NXP |
FET RF 2CH 130V 230MHZ NI780-4
|
封装: NI-780-4 |
库存6,192 |
|
230MHz | 26.5dB | 50V | - | - | 100mA | 300W | 130V | NI-780-4 | NI-780-4 |
||
STMicroelectronics |
TRANSISTOR RF MOSFET N-CH M174
|
封装: M174 |
库存7,072 |
|
175MHz | 14.8dB | 50V | 20A | - | 250mA | 150W | 200V | M174 | M174 |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 21DB SOT502B
|
封装: SOT-502B |
库存4,656 |
|
871.5MHz ~ 891.5MHz | 21dB | 28V | - | - | 950mA | 26.5W | 65V | SOT-502B | SOT502B |
||
Ampleon USA Inc. |
RF FET LDMOS 65V 19DB SOT975C
|
封装: SOT-975C |
库存5,248 |
|
2.45GHz | 19dB | 28V | - | - | 10mA | 12W | 65V | SOT-975C | CDFM2 |
||
Ampleon USA Inc. |
BLM9D2325-20AB/SOT1462/REELDP
|
封装: - |
库存3,152 |
|
- | - | - | - | - | - | - | - | - | - |
||
STMicroelectronics |
FET RF 65V 945MHZ PWRSO10
|
封装: PowerSO-10 Exposed Bottom Pad |
库存3,632 |
|
945MHz | 16.5dB | 28V | 2.5A | - | 100mA | 18W | 65V | PowerSO-10 Exposed Bottom Pad | PowerSO-10RF (Straight Lead) |
||
STMicroelectronics |
FET RF 40V 500MHZ PWRSO-10
|
封装: PowerSO-10 Exposed Bottom Pad |
库存6,368 |
|
500MHz | 17dB | 12.5V | 2.5A | - | 50mA | 3W | 40V | PowerSO-10 Exposed Bottom Pad | 10-PowerSO |
||
Ampleon USA Inc. |
RF FET LDMOS 60V 13DB SOT1135B
|
封装: SOT-1135B |
库存6,752 |
|
3.1GHz ~ 3.5GHz | 13dB | 32V | - | - | 50mA | 30W | 60V | SOT-1135B | CDFM2 |
||
M/A-Com Technology Solutions |
MOSFET 20W 28V 100-500MHZ
|
封装: - |
库存7,024 |
|
100MHz ~ 500MHz | 10dB | 28V | 2.8A | - | 200mA | 20W | 65V | - | - |
||
NXP |
FET RF 2CH 110V 130MHZ NI-1230
|
封装: NI-1230 |
库存5,328 |
|
130MHz | 26dB | 50V | - | - | 150mA | 1000W | 110V | NI-1230 | NI-1230 |
||
Renesas Electronics Corporation |
RF MOSFET
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |
||
NXP |
RF MOSFET LDMOS
|
封装: - |
Request a Quote |
|
- | - | - | - | - | - | - | - | - | - |
||
MACOM Technology Solutions |
RF MOSFET HEMT 28V 440166
|
封装: - |
库存45 |
|
3.3GHz ~ 3.9GHz | 11.5dB | 28 V | - | - | 120 mA | 30W | 84 V | 440166 | 440166 |
||
Microchip Technology |
RF MOSFET VDMOS 140V
|
封装: - |
库存30 |
|
- | - | - | - | - | - | - | - | - | - |
||
MACOM Technology Solutions |
RF MOSFET LDMOS 30V H-36260-2
|
封装: - |
Request a Quote |
|
960MHz | 18.5dB | 30 V | 10µA | - | 1.85 A | 220W | 65 V | H-36260-2 | H-36260-2 |
||
MACOM Technology Solutions |
RF MOSFET HEMT 50V DIE
|
封装: - |
Request a Quote |
|
6GHz | 17dB | 50 V | - | - | 125 mA | 75W | 150 V | Die | Die |
||
Microchip Technology |
RF MOSFET HEMT 50V 55-KR
|
封装: - |
Request a Quote |
|
1.2GHz ~ 1.4GHz | 16.8dB | 50 V | - | - | 200 mA | 400W | 150 V | 55-KR | 55-KR |
||
Ampleon USA Inc. |
RF MOSFET LDMOS 30V DFM6
|
封装: - |
库存33 |
|
1.452GHz ~ 1.492GHz | 18dB | 30 V | 1.4µA | - | 300 mA | 305W | 65 V | SOT-1275-1 | DFM6 |
||
STMicroelectronics |
RF MOSFET LDMOS 50V D4E
|
封装: - |
Request a Quote |
|
960MHz ~ 1.215GHz | 15dB | 50 V | 1µA | - | 150 mA | 750W | 110 V | D4E | D4E |