页 76 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7901D1	Infineon Technologies	MOSFET 2N-CH 30V 6.2A 8SOIC FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6.2A Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存274,680	Logic Level Gate	30V	6.2A	38 mOhm @ 5A, 4.5V	1V @ 250µA	10.5nC @ 5V	780pF @ 16V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
SIA914DJ-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 20V 4.5A SC70-6 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V Power - Max: 6.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存367,092	Logic Level Gate	20V	4.5A	53 mOhm @ 3.7A, 4.5V	1V @ 250µA	11.5nC @ 8V	400pF @ 10V	6.5W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
FDY2001PZ	Fairchild/ON Semiconductor	MOSFET 2P-CH 20V 0.15A SOT-563F FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 150mA Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V Power - Max: 446mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: SC-89-6	封装: SOT-563, SOT-666	库存3,104	Logic Level Gate	20V	150mA	8 Ohm @ 150mA, 4.5V	1.5V @ 250µA	1.4nC @ 4.5V	100pF @ 10V	446mW	-55°C ~ 150°C (TJ)	Surface Mount	SOT-563, SOT-666	SC-89-6
AON3806	Alpha & Omega Semiconductor Inc.	MOSFET 2N-CH 20V 6A 8-DFN FET Type: 2 N-Channel (Dual) Common Drain FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6A Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V Power - Max: 2.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-DFN (2.9x2.3)	封装: 8-SMD, Flat Lead	库存50,400	Logic Level Gate	20V	6A	26 mOhm @ 6.8A, 4.5V	1.1V @ 250µA	9nC @ 4.5V	500pF @ 10V	2.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-DFN (2.9x2.3)
GWM120-0075P3	IXYS	MOSFET 6N-CH 75V 118A ISOPLUS FET Type: 6 N-Channel (3-Phase Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 75V Current - Continuous Drain (Id) @ 25°C: 118A Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: ISOPLUS-DIL? Supplier Device Package: ISOPLUS-DIL?	封装: ISOPLUS-DIL?	库存5,376	Standard	75V	118A	5.5 mOhm @ 60A, 10V	4V @ 1mA	100nC @ 10V	-	-	-55°C ~ 175°C (TJ)	Surface Mount	ISOPLUS-DIL?	ISOPLUS-DIL?
NDM3000	Fairchild/ON Semiconductor	MOSFET 3N/3P-CH 30V 3A SO16 FET Type: 3 N and 3 P-Channel (3-Phase Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 3A Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V Power - Max: 1.4W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存211,392	Logic Level Gate	30V	3A	90 mOhm @ 3A, 10V	3V @ 250µA	25nC @ 10V	360pF @ 10V	1.4W	-55°C ~ 150°C (TJ)	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
IPG20N06S415ATMA2	Infineon Technologies	MOSFET 2N-CH 8TDSON FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 20µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Power - Max: 50W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-4	封装: 8-PowerVDFN	库存3,808	Standard	60V	20A	15.5 mOhm @ 17A, 10V	4V @ 20µA	29nC @ 10V	2260pF @ 25V	50W	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-4
DMNH6022SSD-13	Diodes Incorporated	MOSFET 2NCH 60V 7.1A 8SO FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V Power - Max: 1.5W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,536	Standard	60V	7.1A, 22.6A	27 mOhm @ 5A, 10V	3V @ 250µA	32nC @ 10V	2127pF @ 25V	1.5W	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
UT6K3TCR	Rohm Semiconductor	30V NCH+NCH MIDDLE POWER MOSFET FET Type: 2 N-Channel (Dual) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.5A Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: HUML2020L8	封装: 6-UDFN Exposed Pad	库存4,688	-	30V	5.5A	42 mOhm @ 5A, 4.5V	1.5V @ 1mA	4nC @ 4.5V	450pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	HUML2020L8
STL20DN10F7	STMicroelectronics	MOSFET 2N-CH 100V 20A PWRFLAT56 FET Type: 2 N-Channel (Dual) FET Feature: Standard Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V Power - Max: 62.5W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat? (5x6)	封装: 8-PowerVDFN	库存6,592	Standard	100V	20A	67 mOhm @ 2.5A, 10V	4.5V @ 250µA	7.8nC @ 10V	408pF @ 50V	62.5W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerFlat? (5x6)
ALD310704ASCL	Advanced Linear Devices Inc.	QUAD P-CHANNEL EPAD MATCHED PAIR FET Type: 4 P-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 8V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 380mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	封装: 16-SOIC (0.154", 3.90mm Width)	库存6,864	Standard	8V	-	-	380mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C	Surface Mount	16-SOIC (0.154", 3.90mm Width)	16-SOIC
ALD110800APCL	Advanced Linear Devices Inc.	MOSFET 4N-CH 10.6V 16DIP FET Type: 4 N-Channel, Matched Pair FET Feature: Standard Drain to Source Voltage (Vdss): 10.6V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V Vgs(th) (Max) @ Id: 10mV @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V Power - Max: 500mW Operating Temperature: 0°C ~ 70°C (TJ) Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-PDIP	封装: 16-DIP (0.300", 7.62mm)	库存7,440	Standard	10.6V	-	500 Ohm @ 4V	10mV @ 1µA	-	2.5pF @ 5V	500mW	0°C ~ 70°C (TJ)	Through Hole	16-DIP (0.300", 7.62mm)	16-PDIP
SIA923AEDJ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 20V 4.5A SC70-6L FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V Power - Max: 7.8W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? SC-70-6 Dual Supplier Device Package: PowerPAK? SC-70-6 Dual	封装: PowerPAK? SC-70-6 Dual	库存3,440	Logic Level Gate	20V	4.5A	54 mOhm @ 3.8A, 4.5V	900mV @ 250µA	25nC @ 8V	770pF @ 10V	7.8W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? SC-70-6 Dual	PowerPAK? SC-70-6 Dual
IRF7105TRPBF	Infineon Technologies	MOSFET N/P-CH 25V 8-SOIC FET Type: N and P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V Power - Max: 2W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存77,076	Standard	25V	3.5A, 2.3A	100 mOhm @ 1A, 10V	3V @ 250µA	27nC @ 10V	330pF @ 15V	2W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
NTMFD2D4N03P8	onsemi	MOSFET 2N-CH 30V 17A/56A 8PQFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: 8-PQFN (5x6)	封装: -	库存18,000	-	30V	17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)	5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V	3V @ 250µA, 3V @ 1mA	24nC @ 10V, 55nC @ 10V	1715pF @ 15V, 3825pF @ 15V	1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	8-PQFN (5x6)
SH8JB5TB1	Rohm Semiconductor	MOSFET 2P-CH 40V 8.5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V Power - Max: 1.4W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	库存38,187	-	40V	8.5A (Ta)	15.3mOhm @ 8.5A, 10V	2.5V @ 1mA	51nC @ 10V	2870pF @ 20V	1.4W (Ta)	150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
IRF7331TRPBF-1	Infineon Technologies	MOSFET 2N-CH 20V 7A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 7A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOIC	封装: -	Request a Quote	-	20V	7A (Ta)	30mOhm @ 7A, 4.5V	1.2V @ 250µA	20nC @ 4.5V	1340pF @ 16V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOIC
UPA2752GR-E2-A	Renesas	MOSFET 2N-CH 30V 8A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V Power - Max: 1.7W (Ta) Operating Temperature: 150°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	8A (Tc)	23mOhm @ 4A, 10V	2.5V @ 1mA	10nC @ 10V	480pF @ 10V	1.7W (Ta)	150°C	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
NP29N06QUK-E1-AY	Renesas Electronics Corporation	MOSFET 2N-CH 60V 30A 8HSON FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V Power - Max: 1W (Ta), 44W (Tc) Operating Temperature: 175°C Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Supplier Device Package: 8-HSON (5x5.4)	封装: -	库存7,500	-	60V	30A (Tc)	21mOhm @ 15A, 10V	4V @ 250µA	30nC @ 10V	1500pF @ 25V	1W (Ta), 44W (Tc)	175°C	Surface Mount	8-PowerLDFN	8-HSON (5x5.4)
MCB20P1200LB-TUB	IXYS	SIC 2N-CH 1200V 9SMPD FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: Surface Mount Package / Case: 9-PowerSMD Supplier Device Package: 9-SMPD-B	封装: -	Request a Quote	-	1200V (1.2kV)	-	-	-	-	-	-	-	Surface Mount	9-PowerSMD	9-SMPD-B
UPA503T-T1-A	Renesas Electronics Corporation	MOSFET 2P-CH 50V 0.1A SC59-5 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 100mA Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V Vgs(th) (Max) @ Id: 2.5V @ 1µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V Power - Max: 300mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SC-59-5, Mini Mold	封装: -	Request a Quote	-	50V	100mA	60Ohm @ 10mA, 10V	2.5V @ 1µA	-	17pF @ 5V	300mW	-	Surface Mount	SC-74A, SOT-753	SC-59-5, Mini Mold
IRF7503TR	Infineon Technologies	MOSFET 2N-CH 30V 2.4A MICRO8 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 2.4A Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V Power - Max: 1.25W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Supplier Device Package: Micro8™	封装: -	Request a Quote	Logic Level Gate	30V	2.4A	135mOhm @ 1.7A, 10V	1V @ 250µA	12nC @ 10V	210pF @ 25V	1.25W	-	Surface Mount	8-TSSOP, 8-MSOP (0.118", 3.00mm Width)	Micro8™
DMT6017LDV-7	Diodes Incorporated	MOSFET 2N-CH 25.3 POWERDI3333 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerDI3333-8 (Type UXC)	封装: -	Request a Quote	-	-	25.3 (Tc)	22mOhm @ 6A, 10V	2.3V @ 250µA	-	-	-	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PowerDI3333-8 (Type UXC)
PJL9812_R2_00001	Panjit International Inc.	MOSFET 2N-CH 30V 6A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 1.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V Power - Max: 2W (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	-	30V	6A (Ta)	35mOhm @ 6A, 10V	1.3V @ 250µA	5.1nC @ 4.5V	421pF @ 15V	2W (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SOP
UT6ME5TCR	Rohm Semiconductor	MOSFET N/P-CH 100V 2A HUML2020L8 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta) Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V Power - Max: 2W (Ta) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Supplier Device Package: HUML2020L8	封装: -	库存9,870	-	100V	2A (Ta), 1A (Ta)	207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V	2.5V @ 1mA	2.8nC @ 10V, 6.7nC @ 10V	90pF @ 50V	2W (Ta)	150°C (TJ)	Surface Mount	6-PowerUDFN	HUML2020L8
DMN15M3UCA6-7	Diodes Incorporated	MOSFET 2N-CH 14V X3-DSN2718-6 FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 14V Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-SMD, No Lead Supplier Device Package: X3-DSN2718-6	封装: -	Request a Quote	-	14V	16.5A (Ta)	5.8mOhm @ 3A, 4.5V	1.3V @ 1mA	35.2nC @ 4.5V	2360pF @ 6V	1W	-55°C ~ 150°C (TJ)	Surface Mount	6-SMD, No Lead	X3-DSN2718-6
NXH011T120M3F2PTHG	onsemi	11M 1200V 40A M3S SIC TNPC MODUL FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 91A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V Vgs(th) (Max) @ Id: 4.4V @ 40mA Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V Power - Max: 272W (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 29-PIM (56.7x42.5)	封装: -	库存51	-	1200V (1.2kV)	91A (Tc)	16mOhm @ 70A, 18V	4.4V @ 40mA	306nC @ 20V	6331pF @ 800V	272W (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	29-PIM (56.7x42.5)
TSM5055DCR	Taiwan Semiconductor Corporation	MOSFET 2N-CH 30V 107A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封装: -	Request a Quote	-	30V	10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)	11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V	2.5V @ 250µA	9.3nC @ 10V, 49nC @ 10V	555pF @ 15V, 2550pF @ 15V	2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
CBB032M12FM3	Wolfspeed, Inc.	SIC 4N-CH 1200V 40A MODULE FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 40A (Tj) Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V Vgs(th) (Max) @ Id: 3.6V @ 11.5mA Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存21	-	1200V (1.2kV)	40A (Tj)	42.6mOhm @ 30A, 15V	3.6V @ 11.5mA	118nC @ 15V	3400pF @ 800V	-	-40°C ~ 150°C (TJ)	Chassis Mount	Module	-
MSCSM170AM058CT6AG	Microchip Technology	SIC 2N-CH 1700V 353A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV) Current - Continuous Drain (Id) @ 25°C: 353A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V Vgs(th) (Max) @ Id: 3.3V @ 15mA Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V Power - Max: 1.642kW (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	库存3	-	1700V (1.7kV)	353A (Tc)	7.5mOhm @ 180A, 20V	3.3V @ 15mA	1068nC @ 20V	19800pF @ 1000V	1.642kW (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-

IRF7901D1

Infineon Technologies

MOSFET 2N-CH 30V 6.2A 8SOIC

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6.2A
Rds On (Max) @ Id, Vgs: 38 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 16V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存274,680

Logic Level Gate

30V

6.2A

38 mOhm @ 5A, 4.5V

1V @ 250µA

10.5nC @ 5V

780pF @ 16V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

SIA914DJ-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 20V 4.5A SC70-6

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 53 mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11.5nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Power - Max: 6.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存367,092

Logic Level Gate

20V

4.5A

53 mOhm @ 3.7A, 4.5V

1V @ 250µA

11.5nC @ 8V

400pF @ 10V

6.5W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

FDY2001PZ

Fairchild/ON Semiconductor

MOSFET 2P-CH 20V 0.15A SOT-563F

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 150mA
Rds On (Max) @ Id, Vgs: 8 Ohm @ 150mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 100pF @ 10V
Power - Max: 446mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89-6

封装: SOT-563, SOT-666

库存3,104

Logic Level Gate

20V

150mA

8 Ohm @ 150mA, 4.5V

1.5V @ 250µA

1.4nC @ 4.5V

100pF @ 10V

446mW

-55°C ~ 150°C (TJ)

Surface Mount

SOT-563, SOT-666

SC-89-6

AON3806

Alpha & Omega Semiconductor Inc.

MOSFET 2N-CH 20V 6A 8-DFN

FET Type: 2 N-Channel (Dual) Common Drain
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6A
Rds On (Max) @ Id, Vgs: 26 mOhm @ 6.8A, 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Power - Max: 2.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-DFN (2.9x2.3)

封装: 8-SMD, Flat Lead

库存50,400

Logic Level Gate

20V

6A

26 mOhm @ 6.8A, 4.5V

1.1V @ 250µA

9nC @ 4.5V

500pF @ 10V

2.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-DFN (2.9x2.3)

GWM120-0075P3

IXYS

MOSFET 6N-CH 75V 118A ISOPLUS

FET Type: 6 N-Channel (3-Phase Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 75V
Current - Continuous Drain (Id) @ 25°C: 118A
Rds On (Max) @ Id, Vgs: 5.5 mOhm @ 60A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 100nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: ISOPLUS-DIL?
Supplier Device Package: ISOPLUS-DIL?

封装: ISOPLUS-DIL?

库存5,376

Standard

75V

118A

5.5 mOhm @ 60A, 10V

4V @ 1mA

100nC @ 10V

-

-55°C ~ 175°C (TJ)

Surface Mount

ISOPLUS-DIL?

NDM3000

Fairchild/ON Semiconductor

MOSFET 3N/3P-CH 30V 3A SO16

FET Type: 3 N and 3 P-Channel (3-Phase Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 3A
Rds On (Max) @ Id, Vgs: 90 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 360pF @ 10V
Power - Max: 1.4W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存211,392

Logic Level Gate

30V

3A

90 mOhm @ 3A, 10V

3V @ 250µA

25nC @ 10V

360pF @ 10V

1.4W

-55°C ~ 150°C (TJ)

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

IPG20N06S415ATMA2

Infineon Technologies

MOSFET 2N-CH 8TDSON

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 15.5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 4V @ 20µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V
Power - Max: 50W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-4

封装: 8-PowerVDFN

库存3,808

Standard

60V

20A

15.5 mOhm @ 17A, 10V

4V @ 20µA

29nC @ 10V

2260pF @ 25V

50W

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-4

DMNH6022SSD-13

Diodes Incorporated

MOSFET 2NCH 60V 7.1A 8SO

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.1A, 22.6A
Rds On (Max) @ Id, Vgs: 27 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2127pF @ 25V
Power - Max: 1.5W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,536

Standard

60V

7.1A, 22.6A

27 mOhm @ 5A, 10V

3V @ 250µA

32nC @ 10V

2127pF @ 25V

1.5W

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

UT6K3TCR

Rohm Semiconductor

30V NCH+NCH MIDDLE POWER MOSFET

FET Type: 2 N-Channel (Dual)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.5A
Rds On (Max) @ Id, Vgs: 42 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 450pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: HUML2020L8

封装: 6-UDFN Exposed Pad

库存4,688

-

30V

5.5A

42 mOhm @ 5A, 4.5V

1.5V @ 1mA

4nC @ 4.5V

450pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

HUML2020L8

STL20DN10F7

STMicroelectronics

MOSFET 2N-CH 100V 20A PWRFLAT56

FET Type: 2 N-Channel (Dual)
FET Feature: Standard
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 67 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 408pF @ 50V
Power - Max: 62.5W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat? (5x6)

封装: 8-PowerVDFN

库存6,592

Standard

100V

20A

67 mOhm @ 2.5A, 10V

4.5V @ 250µA

7.8nC @ 10V

408pF @ 50V

62.5W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerFlat? (5x6)

ALD310704ASCL

Advanced Linear Devices Inc.

QUAD P-CHANNEL EPAD MATCHED PAIR

FET Type: 4 P-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 8V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 380mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 16-SOIC

封装: 16-SOIC (0.154", 3.90mm Width)

库存6,864

Standard

8V

-

380mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C

Surface Mount

16-SOIC (0.154", 3.90mm Width)

16-SOIC

ALD110800APCL

Advanced Linear Devices Inc.

MOSFET 4N-CH 10.6V 16DIP

FET Type: 4 N-Channel, Matched Pair
FET Feature: Standard
Drain to Source Voltage (Vdss): 10.6V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 500 Ohm @ 4V
Vgs(th) (Max) @ Id: 10mV @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 2.5pF @ 5V
Power - Max: 500mW
Operating Temperature: 0°C ~ 70°C (TJ)
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Supplier Device Package: 16-PDIP

封装: 16-DIP (0.300", 7.62mm)

库存7,440

Standard

10.6V

-

500 Ohm @ 4V

10mV @ 1µA

-

2.5pF @ 5V

500mW

0°C ~ 70°C (TJ)

Through Hole

16-DIP (0.300", 7.62mm)

16-PDIP

SIA923AEDJ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 20V 4.5A SC70-6L

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Rds On (Max) @ Id, Vgs: 54 mOhm @ 3.8A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 8V
Input Capacitance (Ciss) (Max) @ Vds: 770pF @ 10V
Power - Max: 7.8W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? SC-70-6 Dual
Supplier Device Package: PowerPAK? SC-70-6 Dual

封装: PowerPAK? SC-70-6 Dual

库存3,440

Logic Level Gate

20V

4.5A

54 mOhm @ 3.8A, 4.5V

900mV @ 250µA

25nC @ 8V

770pF @ 10V

7.8W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? SC-70-6 Dual

IRF7105TRPBF

Infineon Technologies

MOSFET N/P-CH 25V 8-SOIC

FET Type: N and P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 3.5A, 2.3A
Rds On (Max) @ Id, Vgs: 100 mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 330pF @ 15V
Power - Max: 2W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存77,076

Standard

25V

3.5A, 2.3A

100 mOhm @ 1A, 10V

3V @ 250µA

27nC @ 10V

330pF @ 15V

2W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

NTMFD2D4N03P8

onsemi

MOSFET 2N-CH 30V 17A/56A 8PQFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 55nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 3825pF @ 15V
Power - Max: 1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: 8-PQFN (5x6)

封装: -

库存18,000

-

30V

17A (Ta), 56A (Tc), 25A (Ta), 84A (Tc)

5mOhm @ 17A, 10V, 2.4mOhm @ 25A, 10V

3V @ 250µA, 3V @ 1mA

24nC @ 10V, 55nC @ 10V

1715pF @ 15V, 3825pF @ 15V

1W (Ta), 23W (Tc), 1.1W (Ta), 25W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

8-PQFN (5x6)

SH8JB5TB1

Rohm Semiconductor

MOSFET 2P-CH 40V 8.5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta)
Rds On (Max) @ Id, Vgs: 15.3mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 51nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 2870pF @ 20V
Power - Max: 1.4W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

库存38,187

-

40V

8.5A (Ta)

15.3mOhm @ 8.5A, 10V

2.5V @ 1mA

51nC @ 10V

2870pF @ 20V

1.4W (Ta)

150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

IRF7331TRPBF-1

Infineon Technologies

MOSFET 2N-CH 20V 7A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 7A, 4.5V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1340pF @ 16V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC

封装: -

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-

20V

7A (Ta)

30mOhm @ 7A, 4.5V

1.2V @ 250µA

20nC @ 4.5V

1340pF @ 16V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOIC

UPA2752GR-E2-A

Renesas

MOSFET 2N-CH 30V 8A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 4A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 10V
Power - Max: 1.7W (Ta)
Operating Temperature: 150°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

30V

8A (Tc)

23mOhm @ 4A, 10V

2.5V @ 1mA

10nC @ 10V

480pF @ 10V

1.7W (Ta)

150°C

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

NP29N06QUK-E1-AY

Renesas Electronics Corporation

MOSFET 2N-CH 60V 30A 8HSON

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 25V
Power - Max: 1W (Ta), 44W (Tc)
Operating Temperature: 175°C
Mounting Type: Surface Mount
Package / Case: 8-PowerLDFN
Supplier Device Package: 8-HSON (5x5.4)

封装: -

库存7,500

-

60V

30A (Tc)

21mOhm @ 15A, 10V

4V @ 250µA

30nC @ 10V

1500pF @ 25V

1W (Ta), 44W (Tc)

175°C

Surface Mount

8-PowerLDFN

8-HSON (5x5.4)

MCB20P1200LB-TUB

IXYS

SIC 2N-CH 1200V 9SMPD

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 9-PowerSMD
Supplier Device Package: 9-SMPD-B

封装: -

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-

1200V (1.2kV)

-

Surface Mount

9-PowerSMD

9-SMPD-B

UPA503T-T1-A

Renesas Electronics Corporation

MOSFET 2P-CH 50V 0.1A SC59-5

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 100mA
Rds On (Max) @ Id, Vgs: 60Ohm @ 10mA, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 5V
Power - Max: 300mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: SC-74A, SOT-753
Supplier Device Package: SC-59-5, Mini Mold

封装: -

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50V

100mA

60Ohm @ 10mA, 10V

2.5V @ 1µA

-

17pF @ 5V

300mW

-

Surface Mount

SC-74A, SOT-753

SC-59-5, Mini Mold

IRF7503TR

Infineon Technologies

MOSFET 2N-CH 30V 2.4A MICRO8

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.4A
Rds On (Max) @ Id, Vgs: 135mOhm @ 1.7A, 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 25V
Power - Max: 1.25W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Supplier Device Package: Micro8™

封装: -

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Logic Level Gate

30V

2.4A

135mOhm @ 1.7A, 10V

1V @ 250µA

12nC @ 10V

210pF @ 25V

1.25W

-

Surface Mount

8-TSSOP, 8-MSOP (0.118", 3.00mm Width)

Micro8™

DMT6017LDV-7

Diodes Incorporated

MOSFET 2N-CH 25.3 POWERDI3333

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 25.3 (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerDI3333-8 (Type UXC)

封装: -

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-

25.3 (Tc)

22mOhm @ 6A, 10V

2.3V @ 250µA

-

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PowerDI3333-8 (Type UXC)

PJL9812_R2_00001

Panjit International Inc.

MOSFET 2N-CH 30V 6A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 5.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 421pF @ 15V
Power - Max: 2W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOP

封装: -

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-

30V

6A (Ta)

35mOhm @ 6A, 10V

1.3V @ 250µA

5.1nC @ 4.5V

421pF @ 15V

2W (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SOP

UT6ME5TCR

Rohm Semiconductor

MOSFET N/P-CH 100V 2A HUML2020L8

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 1A (Ta)
Rds On (Max) @ Id, Vgs: 207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 2.8nC @ 10V, 6.7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 90pF @ 50V
Power - Max: 2W (Ta)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Supplier Device Package: HUML2020L8

封装: -

库存9,870

-

100V

2A (Ta), 1A (Ta)

207mOhm @ 2A, 10V, 840mOhm @ 1A, 10V

2.5V @ 1mA

2.8nC @ 10V, 6.7nC @ 10V

90pF @ 50V

2W (Ta)

150°C (TJ)

Surface Mount

6-PowerUDFN

HUML2020L8

DMN15M3UCA6-7

Diodes Incorporated

MOSFET 2N-CH 14V X3-DSN2718-6

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 14V
Current - Continuous Drain (Id) @ 25°C: 16.5A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 35.2nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2360pF @ 6V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-SMD, No Lead
Supplier Device Package: X3-DSN2718-6

封装: -

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-

14V

16.5A (Ta)

5.8mOhm @ 3A, 4.5V

1.3V @ 1mA

35.2nC @ 4.5V

2360pF @ 6V

1W

-55°C ~ 150°C (TJ)

Surface Mount

6-SMD, No Lead

X3-DSN2718-6

NXH011T120M3F2PTHG

onsemi

11M 1200V 40A M3S SIC TNPC MODUL

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 91A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 70A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 40mA
Gate Charge (Qg) (Max) @ Vgs: 306nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6331pF @ 800V
Power - Max: 272W (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 29-PIM (56.7x42.5)

封装: -

库存51

-

1200V (1.2kV)

91A (Tc)

16mOhm @ 70A, 18V

4.4V @ 40mA

306nC @ 20V

6331pF @ 800V

272W (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

29-PIM (56.7x42.5)

TSM5055DCR

Taiwan Semiconductor Corporation

MOSFET 2N-CH 30V 107A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.3nC @ 10V, 49nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 555pF @ 15V, 2550pF @ 15V
Power - Max: 2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封装: -

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-

30V

10A (Ta), 38A (Tc), 20A (Ta), 107A (Tc)

11.7mOhm @ 10A, 10V, 3.6mOhm @ 20A, 10V

2.5V @ 250µA

9.3nC @ 10V, 49nC @ 10V

555pF @ 15V, 2550pF @ 15V

2.2W (Ta), 30W (Tc), 2.4W (Ta), 69W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

CBB032M12FM3

Wolfspeed, Inc.

SIC 4N-CH 1200V 40A MODULE

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 40A (Tj)
Rds On (Max) @ Id, Vgs: 42.6mOhm @ 30A, 15V
Vgs(th) (Max) @ Id: 3.6V @ 11.5mA
Gate Charge (Qg) (Max) @ Vgs: 118nC @ 15V
Input Capacitance (Ciss) (Max) @ Vds: 3400pF @ 800V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存21

-

1200V (1.2kV)

40A (Tj)

42.6mOhm @ 30A, 15V

3.6V @ 11.5mA

118nC @ 15V

3400pF @ 800V

-

-40°C ~ 150°C (TJ)

Chassis Mount

Module

-

MSCSM170AM058CT6AG

Microchip Technology

SIC 2N-CH 1700V 353A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV)
Current - Continuous Drain (Id) @ 25°C: 353A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 180A, 20V
Vgs(th) (Max) @ Id: 3.3V @ 15mA
Gate Charge (Qg) (Max) @ Vgs: 1068nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 19800pF @ 1000V
Power - Max: 1.642kW (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

库存3

-

1700V (1.7kV)

353A (Tc)

7.5mOhm @ 180A, 20V

3.3V @ 15mA

1068nC @ 20V

19800pF @ 1000V

1.642kW (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-