页 179 - 晶体管 - FET，MOSFET - 阵列 | 分立半导体产品

零件编号	制造商	描述	封装	库存	FET Feature	Drain to Source Voltage (Vdss)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Power - Max	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IRF7756TRPBF	Infineon Technologies	MOSFET 2P-CH 12V 4.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存7,024	Logic Level Gate	12V	4.3A	40 mOhm @ 4.3A, 4.5V	900mV @ 250µA	18nC @ 4.5V	1400pF @ 10V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
FDS6982AS_G	Fairchild/ON Semiconductor	MOSFET 2N-CH 8SOIC FET Type: - FET Feature: - Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: - Operating Temperature: - Mounting Type: - Package / Case: - Supplier Device Package: -	封装: -	库存3,280	-	-	-	-	-	-	-	-	-	-	-	-
TPCL4202(TE85L,F)	Toshiba Semiconductor and Storage	MOSFET 2N-CH 4CHIPLGA FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: - Vgs(th) (Max) @ Id: 1.2V @ 200µA Gate Charge (Qg) (Max) @ Vgs: - Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V Power - Max: 500mW Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XLGA Supplier Device Package: 4-Chip LGA	封装: 4-XLGA	库存2,688	Standard	-	-	-	1.2V @ 200µA	-	780pF @ 10V	500mW	150°C (TJ)	Surface Mount	4-XLGA	4-Chip LGA
SI6969DQ-T1-E3	Vishay Siliconix	MOSFET 2P-CH 12V 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V Vgs(th) (Max) @ Id: 450mV @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存36,000	Logic Level Gate	12V	-	34 mOhm @ 4.6A, 4.5V	450mV @ 250µA (Min)	40nC @ 4.5V	-	1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI6943BDQ-T1-GE3	Vishay Siliconix	MOSFET 2P-CH 12V 2.3A 8TSSOP FET Type: 2 P-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 2.3A Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V Vgs(th) (Max) @ Id: 800mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 800mW Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 8-TSSOP	封装: 8-TSSOP (0.173", 4.40mm Width)	库存73,212	Logic Level Gate	12V	2.3A	80 mOhm @ 2.5A, 4.5V	800mV @ 250µA	10nC @ 4.5V	-	800mW	-55°C ~ 150°C (TJ)	Surface Mount	8-TSSOP (0.173", 4.40mm Width)	8-TSSOP
SI4816DY-T1-GE3	Vishay Siliconix	MOSFET 2N-CH 30V 5.3A 8-SOIC FET Type: 2 N-Channel (Half Bridge) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1W, 1.25W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存6,480	Logic Level Gate	30V	5.3A, 7.7A	22 mOhm @ 6.3A, 10V	2V @ 250µA	12nC @ 5V	-	1W, 1.25W	-55°C ~ 150°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
CSD88584Q5DC	Texas Instruments	MOSFET ARRAY 2N-CH 40A 22VSON FET Type: 2 N-Channel (Half Bridge) FET Feature: Standard Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: - Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V Power - Max: 12W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerTFDFN Supplier Device Package: 22-VSON-CLIP (5x6)	封装: 22-PowerTFDFN	库存7,344	Standard	40V	-	0.95 mOhm @ 30A, 10V	2.3V @ 250µA	88nC @ 4.5V	12400pF @ 20V	12W	-55°C ~ 150°C (TJ)	Surface Mount	22-PowerTFDFN	22-VSON-CLIP (5x6)
SI7212DN-T1-E3	Vishay Siliconix	MOSFET 2N-CH 30V 4.9A 1212-8 FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.9A Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: - Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK? 1212-8 Dual Supplier Device Package: PowerPAK? 1212-8 Dual	封装: PowerPAK? 1212-8 Dual	库存66,396	Logic Level Gate	30V	4.9A	36 mOhm @ 6.8A, 10V	1.6V @ 250µA	11nC @ 4.5V	-	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	PowerPAK? 1212-8 Dual	PowerPAK? 1212-8 Dual
CSD87334Q3D	Texas Instruments	MOSFET 2N-CH 30V 20A 8SON FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 20A Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V Vgs(th) (Max) @ Id: 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Power - Max: 6W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-VSON (3.3x3.3)	封装: 8-PowerTDFN	库存6,464	Logic Level Gate	30V	20A	6 mOhm @ 12A, 8V	1.2V @ 250µA	8.3nC @ 4.5V	1260pF @ 15V	6W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-VSON (3.3x3.3)
DMPH6050SSD-13	Diodes Incorporated	MOSFET BVDSS: 41V 60V SO-8 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): - Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta) Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V Power - Max: - Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: 8-SOIC (0.154", 3.90mm Width)	库存7,888	Standard	-	5.2A (Ta)	48 mOhm @ 5A, 10V	3V @ 250µA	14.5nC @ 4.5V	1525pF @ 30V	-	-55°C ~ 175°C (TJ)	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMP2065UFDB-7	Diodes Incorporated	MOSFET BVDSS: 8V 24V U-DFN2020-6 FET Type: 2 P-Channel FET Feature: Standard Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Power - Max: 1.54W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Supplier Device Package: U-DFN2020-6 (Type B)	封装: 6-UDFN Exposed Pad	库存3,296	Standard	20V	4.5A (Ta)	50 mOhm @ 2A, 4.5V	1V @ 250µA	9.1nC @ 4.5V	752pF @ 15V	1.54W	-55°C ~ 150°C (TJ)	Surface Mount	6-UDFN Exposed Pad	U-DFN2020-6 (Type B)
IRFH4251DTRPBF	Infineon Technologies	MOSFET 2N-CH 25V 64A/188A PQFN FET Type: 2 N-Channel (Dual), Schottky FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 64A, 188A Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2.1V @ 35µA Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V Power - Max: 31W, 63W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PQFN (5x6)	封装: 8-PowerVDFN	库存12,408	Logic Level Gate	25V	64A, 188A	3.2 mOhm @ 30A, 10V	2.1V @ 35µA	15nC @ 4.5V	1314pF @ 13V	31W, 63W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerVDFN	PQFN (5x6)
FDPC5018SG	Fairchild/ON Semiconductor	MOSFET 2N-CH 30V PWRCLIP56 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Standard Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 32A Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V Power - Max: 1W, 1.1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Supplier Device Package: Power Clip 56	封装: 8-PowerWDFN	库存6,976	Standard	30V	17A, 32A	5 mOhm @ 17A, 10V	3V @ 250µA	24nC @ 10V	1715pF @ 15V	1W, 1.1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerWDFN	Power Clip 56
BSC0921NDIATMA1	Infineon Technologies	MOSFET 2N-CH 30V 17A/31A TISON8 FET Type: 2 N-Channel (Dual) Asymmetrical FET Feature: Logic Level Gate, 4.5V Drive Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A, 31A Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V Power - Max: 1W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: PG-TISON-8	封装: 8-PowerTDFN	库存42,804	Logic Level Gate, 4.5V Drive	30V	17A, 31A	5 mOhm @ 20A, 10V	2V @ 250µA	8.9nC @ 4.5V	1025pF @ 15V	1W	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	PG-TISON-8
ECH8690-TL-H	ON Semiconductor	MOSFET N/P-CH 60V ECH8 FET Type: N and P-Channel FET Feature: Logic Level Gate, 4V Drive Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V Power - Max: 1.5W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Supplier Device Package: 8-ECH	封装: 8-SMD, Flat Lead	库存29,532	Logic Level Gate, 4V Drive	60V	4.7A, 3.5A	55 mOhm @ 2A, 10V	-	18nC @ 10V	955pF @ 20V	1.5W	150°C (TJ)	Surface Mount	8-SMD, Flat Lead	8-ECH
FDD8424H	Fairchild/ON Semiconductor	MOSFET N/P-CH 40V 9A/6.5A DPAK FET Type: N and P-Channel FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V Power - Max: 1.3W Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD Supplier Device Package: TO-252-4L	封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD	库存292,224	Logic Level Gate	40V	9A, 6.5A	24 mOhm @ 9A, 10V	3V @ 250µA	20nC @ 10V	1000pF @ 20V	1.3W	-55°C ~ 150°C (TJ)	Surface Mount	TO-252-5, DPak (4 Leads + Tab), TO-252AD	TO-252-4L
DMN2053UVTQ-13	Diodes Incorporated	MOSFET 2N-CH 20V 4.6A TSOT26 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V Power - Max: 700mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Supplier Device Package: TSOT-26	封装: -	Request a Quote	-	20V	4.6A (Ta)	35mOhm @ 5A, 4.5V	1V @ 250µA	3.6nC @ 4.5V	369pF @ 10V	700mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	SOT-23-6 Thin, TSOT-23-6	TSOT-26
BUK7K89-100E-1X	Nexperia USA Inc.	MOSFET 100V 13A LFPAK56D FET Type: - FET Feature: - Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 13A (Ta) Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V Power - Max: 38W (Ta) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Supplier Device Package: LFPAK56D	封装: -	Request a Quote	-	100V	13A (Ta)	82.5mOhm @ 5A, 10V	4V @ 1mA	13.6nC @ 10V	811pF @ 25V	38W (Ta)	-55°C ~ 175°C (TJ)	Surface Mount	SOT-1205, 8-LFPAK56	LFPAK56D
NTJD3158CT1G	onsemi	MOSFET N/P-CH 20V 0.63A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V Power - Max: 270mW Operating Temperature: - Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88/SC70-6/SOT-363	封装: -	Request a Quote	Logic Level Gate	20V	630mA, 820mA	375mOhm @ 630mA, 4.5V	1.5V @ 250µA	3nC @ 4.5V	46pF @ 20V	270mW	-	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88/SC70-6/SOT-363
IAUC60N04S6L045HATMA1	Infineon Technologies	MOSFET 2N-CH 40V 60A 8TDSON FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 60A (Tj) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V Power - Max: 52W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PG-TDSON-8-57	封装: -	库存88,344	Logic Level Gate	40V	60A (Tj)	4.5mOhm @ 30A, 10V	2V @ 13µA	19nC @ 10V	1136pF @ 25V	52W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount	8-PowerVDFN	PG-TDSON-8-57
FW342-TL-E	onsemi	MOSFET N/P-CH 30V 6A/5A 8SOP FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A, 5A Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V Vgs(th) (Max) @ Id: - Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V Power - Max: 1.8W Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.173", 4.40mm Width) Supplier Device Package: 8-SOP	封装: -	Request a Quote	Logic Level Gate	30V	6A, 5A	33mOhm @ 6A, 10V	-	16nC @ 10V	850pF @ 10V	1.8W	150°C (TJ)	Surface Mount	8-SOIC (0.173", 4.40mm Width)	8-SOP
MSCSM120DDUM16CTBL3NG	Microchip Technology	SIC 4N-CH 1200V 150A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 150A Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V Vgs(th) (Max) @ Id: 2.8V @ 2mA Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V Power - Max: 560W Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1200V (1.2kV)	150A	16mOhm @ 80A, 20V	2.8V @ 2mA	464nC @ 20V	6040pF @ 1000V	560W	-55°C ~ 175°C (TJ)	Chassis Mount	Module	-
MSCSM170HRM233AG	Microchip Technology	SIC 4N-CH 1700V/1200V 124A FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc) Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V Power - Max: 602W (Tc), 395W (Tc) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: -	封装: -	Request a Quote	-	1700V (1.7kV), 1200V (1.2kV)	124A (Tc), 89A (Tc)	22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V	3.2V @ 5mA, 2.8V @ 3mA	356nC @ 20V, 232nC @ 20V	6600pF @ 1000V, 3020pF @ 1000V	602W (Tc), 395W (Tc)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	-
IRF7304QTRPBF	Infineon Technologies	MOSFET 2P-CH 20V 4.3A 8SOIC FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.3A Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V Vgs(th) (Max) @ Id: 700mV @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V Power - Max: 2W Operating Temperature: - Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	封装: -	Request a Quote	Logic Level Gate	20V	4.3A	90mOhm @ 2.2A, 4.5V	700mV @ 250µA	22nC @ 4.5V	610pF @ 15V	2W	-	Surface Mount	8-SOIC (0.154", 3.90mm Width)	8-SO
DMN3401LDW-13	Diodes Incorporated	MOSFET 2N-CH 30V 0.8A SOT363 FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V Vgs(th) (Max) @ Id: 1.6V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V Power - Max: 290mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SOT-363	封装: -	库存59,580	-	30V	800mA (Ta)	400mOhm @ 590mA, 10V	1.6V @ 250µA	1.2nC @ 10V	50pF @ 15V	290mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SOT-363
EPC2111	EPC	GANFET 2N-CH 30V 16A DIE FET Type: GaNFET (Gallium Nitride) FET Feature: - Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V Vgs(th) (Max) @ Id: 2.5V @ 5mA Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V Power - Max: - Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die	封装: -	库存59,616	-	30V	16A (Ta)	19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V	2.5V @ 5mA	2.2nC @ 5V, 5.7nC @ 5V	230pF @ 15V, 590pF @ 15V	-	-40°C ~ 150°C (TJ)	Surface Mount	Die	Die
NVLJWD040N06CLTAG	onsemi	MOSFET 2N-CH 60V 5.5A 6WDFNW FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V Vgs(th) (Max) @ Id: 2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V Power - Max: 2.2W (Ta), 24W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-WDFN Exposed Pad Supplier Device Package: 6-WDFNW (2.2x2.3)	封装: -	Request a Quote	-	60V	5.5A (Ta), 18A (Tc)	38mOhm @ 5A, 10V	2V @ 13µA	6nC @ 10V	340pF @ 25V	2.2W (Ta), 24W (Tc)	-55°C ~ 175°C (TJ)	Surface Mount, Wettable Flank	6-WDFN Exposed Pad	6-WDFNW (2.2x2.3)
TSM250NB06LDCR-RLG	Taiwan Semiconductor Corporation	MOSFET 2N-CH 60V 6A/29A 8DFN FET Type: MOSFET (Metal Oxide) FET Feature: - Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V Power - Max: 2W (Ta), 48W (Tc) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: 8-PDFN (5x6)	封装: -	库存14,394	-	60V	6A (Ta), 29A (Tc)	25mOhm @ 6A, 10V	2.5V @ 250µA	23nC @ 10V	1314pF @ 30V	2W (Ta), 48W (Tc)	-55°C ~ 150°C (TJ)	Surface Mount	8-PowerTDFN	8-PDFN (5x6)
FDG6303N-F169	onsemi	MOSFET 2N-CH 25V 0.5A SC88 FET Type: MOSFET (Metal Oxide) FET Feature: Logic Level Gate Drain to Source Voltage (Vdss): 25V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Power - Max: 300mW (Ta) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: SC-88 (SC-70-6)	封装: -	Request a Quote	Logic Level Gate	25V	500mA (Ta)	450mOhm @ 500mA, 4.5V	1.5V @ 250µA	2.3nC @ 4.5V	50pF @ 10V	300mW (Ta)	-55°C ~ 150°C (TJ)	Surface Mount	6-TSSOP, SC-88, SOT-363	SC-88 (SC-70-6)
NXH004P120M3F2PTNG	onsemi	SILICON CARBIDE (SIC) MODULE EL FET Type: Silicon Carbide (SiC) FET Feature: - Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 338A (Tj) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V Vgs(th) (Max) @ Id: 4.4V @ 120mA Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V Power - Max: 1.1kW (Tj) Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Chassis Mount Package / Case: Module Supplier Device Package: 36-PIM (56.7x62.8)	封装: -	Request a Quote	-	1200V (1.2kV)	338A (Tj)	5.5mOhm @ 200A, 18V	4.4V @ 120mA	876nC @ 20V	16410pF @ 800V	1.1kW (Tj)	-40°C ~ 175°C (TJ)	Chassis Mount	Module	36-PIM (56.7x62.8)

IRF7756TRPBF

Infineon Technologies

MOSFET 2P-CH 12V 4.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 40 mOhm @ 4.3A, 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存7,024

Logic Level Gate

12V

4.3A

40 mOhm @ 4.3A, 4.5V

900mV @ 250µA

18nC @ 4.5V

1400pF @ 10V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

FDS6982AS_G

Fairchild/ON Semiconductor

MOSFET 2N-CH 8SOIC

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: -
Operating Temperature: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -

封装: -

库存3,280

-

TPCL4202(TE85L,F)

Toshiba Semiconductor and Storage

MOSFET 2N-CH 4CHIPLGA

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: -
Vgs(th) (Max) @ Id: 1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs: -
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 10V
Power - Max: 500mW
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XLGA
Supplier Device Package: 4-Chip LGA

封装: 4-XLGA

库存2,688

Standard

-

1.2V @ 200µA

-

780pF @ 10V

500mW

150°C (TJ)

Surface Mount

4-XLGA

4-Chip LGA

SI6969DQ-T1-E3

Vishay Siliconix

MOSFET 2P-CH 12V 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 34 mOhm @ 4.6A, 4.5V
Vgs(th) (Max) @ Id: 450mV @ 250µA (Min)
Gate Charge (Qg) (Max) @ Vgs: 40nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存36,000

Logic Level Gate

12V

-

34 mOhm @ 4.6A, 4.5V

450mV @ 250µA (Min)

40nC @ 4.5V

-

1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI6943BDQ-T1-GE3

Vishay Siliconix

MOSFET 2P-CH 12V 2.3A 8TSSOP

FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Rds On (Max) @ Id, Vgs: 80 mOhm @ 2.5A, 4.5V
Vgs(th) (Max) @ Id: 800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 800mW
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP

封装: 8-TSSOP (0.173", 4.40mm Width)

库存73,212

Logic Level Gate

12V

2.3A

80 mOhm @ 2.5A, 4.5V

800mV @ 250µA

10nC @ 4.5V

-

800mW

-55°C ~ 150°C (TJ)

Surface Mount

8-TSSOP (0.173", 4.40mm Width)

8-TSSOP

SI4816DY-T1-GE3

Vishay Siliconix

MOSFET 2N-CH 30V 5.3A 8-SOIC

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.3A, 7.7A
Rds On (Max) @ Id, Vgs: 22 mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1W, 1.25W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存6,480

Logic Level Gate

30V

5.3A, 7.7A

22 mOhm @ 6.3A, 10V

2V @ 250µA

12nC @ 5V

-

1W, 1.25W

-55°C ~ 150°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

CSD88584Q5DC

Texas Instruments

MOSFET ARRAY 2N-CH 40A 22VSON

FET Type: 2 N-Channel (Half Bridge)
FET Feature: Standard
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: -
Rds On (Max) @ Id, Vgs: 0.95 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 88nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 12400pF @ 20V
Power - Max: 12W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 22-PowerTFDFN
Supplier Device Package: 22-VSON-CLIP (5x6)

封装: 22-PowerTFDFN

库存7,344

Standard

40V

-

0.95 mOhm @ 30A, 10V

2.3V @ 250µA

88nC @ 4.5V

12400pF @ 20V

12W

-55°C ~ 150°C (TJ)

Surface Mount

22-PowerTFDFN

22-VSON-CLIP (5x6)

SI7212DN-T1-E3

Vishay Siliconix

MOSFET 2N-CH 30V 4.9A 1212-8

FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.9A
Rds On (Max) @ Id, Vgs: 36 mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: -
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK? 1212-8 Dual
Supplier Device Package: PowerPAK? 1212-8 Dual

封装: PowerPAK? 1212-8 Dual

库存66,396

Logic Level Gate

30V

4.9A

36 mOhm @ 6.8A, 10V

1.6V @ 250µA

11nC @ 4.5V

-

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

PowerPAK? 1212-8 Dual

CSD87334Q3D

Texas Instruments

MOSFET 2N-CH 30V 20A 8SON

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 20A
Rds On (Max) @ Id, Vgs: 6 mOhm @ 12A, 8V
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V
Power - Max: 6W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-VSON (3.3x3.3)

封装: 8-PowerTDFN

库存6,464

Logic Level Gate

30V

20A

6 mOhm @ 12A, 8V

1.2V @ 250µA

8.3nC @ 4.5V

1260pF @ 15V

6W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-VSON (3.3x3.3)

DMPH6050SSD-13

Diodes Incorporated

MOSFET BVDSS: 41V 60V SO-8

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): -
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 48 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 14.5nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1525pF @ 30V
Power - Max: -
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: 8-SOIC (0.154", 3.90mm Width)

库存7,888

Standard

-

5.2A (Ta)

48 mOhm @ 5A, 10V

3V @ 250µA

14.5nC @ 4.5V

1525pF @ 30V

-

-55°C ~ 175°C (TJ)

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMP2065UFDB-7

Diodes Incorporated

MOSFET BVDSS: 8V 24V U-DFN2020-6

FET Type: 2 P-Channel
FET Feature: Standard
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 50 mOhm @ 2A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V
Power - Max: 1.54W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Supplier Device Package: U-DFN2020-6 (Type B)

封装: 6-UDFN Exposed Pad

库存3,296

Standard

20V

4.5A (Ta)

50 mOhm @ 2A, 4.5V

1V @ 250µA

9.1nC @ 4.5V

752pF @ 15V

1.54W

-55°C ~ 150°C (TJ)

Surface Mount

6-UDFN Exposed Pad

U-DFN2020-6 (Type B)

IRFH4251DTRPBF

Infineon Technologies

MOSFET 2N-CH 25V 64A/188A PQFN

FET Type: 2 N-Channel (Dual), Schottky
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 64A, 188A
Rds On (Max) @ Id, Vgs: 3.2 mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2.1V @ 35µA
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 13V
Power - Max: 31W, 63W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PQFN (5x6)

封装: 8-PowerVDFN

库存12,408

Logic Level Gate

25V

64A, 188A

3.2 mOhm @ 30A, 10V

2.1V @ 35µA

15nC @ 4.5V

1314pF @ 13V

31W, 63W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerVDFN

PQFN (5x6)

FDPC5018SG

Fairchild/ON Semiconductor

MOSFET 2N-CH 30V PWRCLIP56

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Standard
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 32A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V
Power - Max: 1W, 1.1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Supplier Device Package: Power Clip 56

封装: 8-PowerWDFN

库存6,976

Standard

30V

17A, 32A

5 mOhm @ 17A, 10V

3V @ 250µA

24nC @ 10V

1715pF @ 15V

1W, 1.1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerWDFN

Power Clip 56

BSC0921NDIATMA1

Infineon Technologies

MOSFET 2N-CH 30V 17A/31A TISON8

FET Type: 2 N-Channel (Dual) Asymmetrical
FET Feature: Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A, 31A
Rds On (Max) @ Id, Vgs: 5 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.9nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 1025pF @ 15V
Power - Max: 1W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: PG-TISON-8

封装: 8-PowerTDFN

库存42,804

Logic Level Gate, 4.5V Drive

30V

17A, 31A

5 mOhm @ 20A, 10V

2V @ 250µA

8.9nC @ 4.5V

1025pF @ 15V

1W

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

PG-TISON-8

ECH8690-TL-H

ON Semiconductor

MOSFET N/P-CH 60V ECH8

FET Type: N and P-Channel
FET Feature: Logic Level Gate, 4V Drive
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 4.7A, 3.5A
Rds On (Max) @ Id, Vgs: 55 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 955pF @ 20V
Power - Max: 1.5W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Supplier Device Package: 8-ECH

封装: 8-SMD, Flat Lead

库存29,532

Logic Level Gate, 4V Drive

60V

4.7A, 3.5A

55 mOhm @ 2A, 10V

-

18nC @ 10V

955pF @ 20V

1.5W

150°C (TJ)

Surface Mount

8-SMD, Flat Lead

8-ECH

FDD8424H

Fairchild/ON Semiconductor

MOSFET N/P-CH 40V 9A/6.5A DPAK

FET Type: N and P-Channel
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 9A, 6.5A
Rds On (Max) @ Id, Vgs: 24 mOhm @ 9A, 10V
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 20V
Power - Max: 1.3W
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package: TO-252-4L

封装: TO-252-5, DPak (4 Leads + Tab), TO-252AD

库存292,224

Logic Level Gate

40V

9A, 6.5A

24 mOhm @ 9A, 10V

3V @ 250µA

20nC @ 10V

1000pF @ 20V

1.3W

-55°C ~ 150°C (TJ)

Surface Mount

TO-252-5, DPak (4 Leads + Tab), TO-252AD

TO-252-4L

DMN2053UVTQ-13

Diodes Incorporated

MOSFET 2N-CH 20V 4.6A TSOT26

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 369pF @ 10V
Power - Max: 700mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Supplier Device Package: TSOT-26

封装: -

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-

20V

4.6A (Ta)

35mOhm @ 5A, 4.5V

1V @ 250µA

3.6nC @ 4.5V

369pF @ 10V

700mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

SOT-23-6 Thin, TSOT-23-6

TSOT-26

BUK7K89-100E-1X

Nexperia USA Inc.

MOSFET 100V 13A LFPAK56D

FET Type: -
FET Feature: -
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta)
Rds On (Max) @ Id, Vgs: 82.5mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs: 13.6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 811pF @ 25V
Power - Max: 38W (Ta)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Supplier Device Package: LFPAK56D

封装: -

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-

100V

13A (Ta)

82.5mOhm @ 5A, 10V

4V @ 1mA

13.6nC @ 10V

811pF @ 25V

38W (Ta)

-55°C ~ 175°C (TJ)

Surface Mount

SOT-1205, 8-LFPAK56

LFPAK56D

NTJD3158CT1G

onsemi

MOSFET N/P-CH 20V 0.63A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 630mA, 820mA
Rds On (Max) @ Id, Vgs: 375mOhm @ 630mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 20V
Power - Max: 270mW
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88/SC70-6/SOT-363

封装: -

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Logic Level Gate

20V

630mA, 820mA

375mOhm @ 630mA, 4.5V

1.5V @ 250µA

3nC @ 4.5V

46pF @ 20V

270mW

-

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88/SC70-6/SOT-363

IAUC60N04S6L045HATMA1

Infineon Technologies

MOSFET 2N-CH 40V 60A 8TDSON

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 60A (Tj)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1136pF @ 25V
Power - Max: 52W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PG-TDSON-8-57

封装: -

库存88,344

Logic Level Gate

40V

60A (Tj)

4.5mOhm @ 30A, 10V

2V @ 13µA

19nC @ 10V

1136pF @ 25V

52W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount

8-PowerVDFN

PG-TDSON-8-57

FW342-TL-E

onsemi

MOSFET N/P-CH 30V 6A/5A 8SOP

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 5A
Rds On (Max) @ Id, Vgs: 33mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: -
Gate Charge (Qg) (Max) @ Vgs: 16nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 850pF @ 10V
Power - Max: 1.8W
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package: 8-SOP

封装: -

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Logic Level Gate

30V

6A, 5A

33mOhm @ 6A, 10V

-

16nC @ 10V

850pF @ 10V

1.8W

150°C (TJ)

Surface Mount

8-SOIC (0.173", 4.40mm Width)

8-SOP

MSCSM120DDUM16CTBL3NG

Microchip Technology

SIC 4N-CH 1200V 150A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 150A
Rds On (Max) @ Id, Vgs: 16mOhm @ 80A, 20V
Vgs(th) (Max) @ Id: 2.8V @ 2mA
Gate Charge (Qg) (Max) @ Vgs: 464nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6040pF @ 1000V
Power - Max: 560W
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1200V (1.2kV)

150A

16mOhm @ 80A, 20V

2.8V @ 2mA

464nC @ 20V

6040pF @ 1000V

560W

-55°C ~ 175°C (TJ)

Chassis Mount

Module

-

MSCSM170HRM233AG

Microchip Technology

SIC 4N-CH 1700V/1200V 124A

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1700V (1.7kV), 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 124A (Tc), 89A (Tc)
Rds On (Max) @ Id, Vgs: 22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V
Vgs(th) (Max) @ Id: 3.2V @ 5mA, 2.8V @ 3mA
Gate Charge (Qg) (Max) @ Vgs: 356nC @ 20V, 232nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 6600pF @ 1000V, 3020pF @ 1000V
Power - Max: 602W (Tc), 395W (Tc)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: -

封装: -

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-

1700V (1.7kV), 1200V (1.2kV)

124A (Tc), 89A (Tc)

22.5mOhm @ 60A, 20V, 31mOhm @ 40A, 20V

3.2V @ 5mA, 2.8V @ 3mA

356nC @ 20V, 232nC @ 20V

6600pF @ 1000V, 3020pF @ 1000V

602W (Tc), 395W (Tc)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

-

IRF7304QTRPBF

Infineon Technologies

MOSFET 2P-CH 20V 4.3A 8SOIC

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.3A
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.2A, 4.5V
Vgs(th) (Max) @ Id: 700mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 610pF @ 15V
Power - Max: 2W
Operating Temperature: -
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SO

封装: -

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Logic Level Gate

20V

4.3A

90mOhm @ 2.2A, 4.5V

700mV @ 250µA

22nC @ 4.5V

610pF @ 15V

2W

-

Surface Mount

8-SOIC (0.154", 3.90mm Width)

8-SO

DMN3401LDW-13

Diodes Incorporated

MOSFET 2N-CH 30V 0.8A SOT363

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 590mA, 10V
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 15V
Power - Max: 290mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SOT-363

封装: -

库存59,580

-

30V

800mA (Ta)

400mOhm @ 590mA, 10V

1.6V @ 250µA

1.2nC @ 10V

50pF @ 15V

290mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SOT-363

EPC2111

EPC

GANFET 2N-CH 30V 16A DIE

FET Type: GaNFET (Gallium Nitride)
FET Feature: -
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 5V, 5.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 15V, 590pF @ 15V
Power - Max: -
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die

封装: -

库存59,616

-

30V

16A (Ta)

19mOhm @ 15A, 5V, 8mOhm @ 15A, 5V

2.5V @ 5mA

2.2nC @ 5V, 5.7nC @ 5V

230pF @ 15V, 590pF @ 15V

-

-40°C ~ 150°C (TJ)

Surface Mount

Die

NVLJWD040N06CLTAG

onsemi

MOSFET 2N-CH 60V 5.5A 6WDFNW

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5A, 10V
Vgs(th) (Max) @ Id: 2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 6nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 340pF @ 25V
Power - Max: 2.2W (Ta), 24W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-WDFNW (2.2x2.3)

封装: -

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-

60V

5.5A (Ta), 18A (Tc)

38mOhm @ 5A, 10V

2V @ 13µA

6nC @ 10V

340pF @ 25V

2.2W (Ta), 24W (Tc)

-55°C ~ 175°C (TJ)

Surface Mount, Wettable Flank

6-WDFN Exposed Pad

6-WDFNW (2.2x2.3)

TSM250NB06LDCR-RLG

Taiwan Semiconductor Corporation

MOSFET 2N-CH 60V 6A/29A 8DFN

FET Type: MOSFET (Metal Oxide)
FET Feature: -
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 29A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds: 1314pF @ 30V
Power - Max: 2W (Ta), 48W (Tc)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: 8-PDFN (5x6)

封装: -

库存14,394

-

60V

6A (Ta), 29A (Tc)

25mOhm @ 6A, 10V

2.5V @ 250µA

23nC @ 10V

1314pF @ 30V

2W (Ta), 48W (Tc)

-55°C ~ 150°C (TJ)

Surface Mount

8-PowerTDFN

8-PDFN (5x6)

FDG6303N-F169

onsemi

MOSFET 2N-CH 25V 0.5A SC88

FET Type: MOSFET (Metal Oxide)
FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.3nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Power - Max: 300mW (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: SC-88 (SC-70-6)

封装: -

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Logic Level Gate

25V

500mA (Ta)

450mOhm @ 500mA, 4.5V

1.5V @ 250µA

2.3nC @ 4.5V

50pF @ 10V

300mW (Ta)

-55°C ~ 150°C (TJ)

Surface Mount

6-TSSOP, SC-88, SOT-363

SC-88 (SC-70-6)

NXH004P120M3F2PTNG

onsemi

SILICON CARBIDE (SIC) MODULE EL

FET Type: Silicon Carbide (SiC)
FET Feature: -
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C: 338A (Tj)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 200A, 18V
Vgs(th) (Max) @ Id: 4.4V @ 120mA
Gate Charge (Qg) (Max) @ Vgs: 876nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds: 16410pF @ 800V
Power - Max: 1.1kW (Tj)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Chassis Mount
Package / Case: Module
Supplier Device Package: 36-PIM (56.7x62.8)

封装: -

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-

1200V (1.2kV)

338A (Tj)

5.5mOhm @ 200A, 18V

4.4V @ 120mA

876nC @ 20V

16410pF @ 800V

1.1kW (Tj)

-40°C ~ 175°C (TJ)

Chassis Mount

Module

36-PIM (56.7x62.8)