页 288 - 晶体管 - 双极 (BJT) - 单 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 单

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图片
零件编号
制造商
描述
封装
库存
数量
Current - Collector (Ic) (Max)
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Power - Max
Frequency - Transition
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
2SC2229-Y(SAN2,F,M
Toshiba Semiconductor and Storage

TRANS NPN 50MA 150V TO226-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 150V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
  • Power - Max: 800mW
  • Frequency - Transition: 120MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-92MOD
封装: TO-226-3, TO-92-3 Long Body
库存2,192
50mA
150V
500mV @ 1mA, 10mA
100nA (ICBO)
70 @ 10mA, 5V
800mW
120MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-92MOD
hot BDW42
ON Semiconductor

TRANS NPN DARL 100V 15A TO-220AB

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 100V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 50mA, 10A
  • Current - Collector Cutoff (Max): 2mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
  • Power - Max: 85W
  • Frequency - Transition: 4MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220AB
封装: TO-220-3
库存16,476
15A
100V
3V @ 50mA, 10A
2mA
1000 @ 5A, 4V
85W
4MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220AB
KSC1507Y
Fairchild/ON Semiconductor

TRANS NPN 300V 200UA TO-220

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200µA
  • Voltage - Collector Emitter Breakdown (Max): 300V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 10V
  • Power - Max: 15W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3
  • Supplier Device Package: TO-220-3
封装: TO-220-3
库存6,032
200µA
300V
2V @ 5mA, 50mA
100µA (ICBO)
120 @ 10mA, 10V
15W
80MHz
150°C (TJ)
Through Hole
TO-220-3
TO-220-3
FPN560
Fairchild/ON Semiconductor

TRANS NPN 60V 3A TO-226

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 3A
  • Voltage - Collector Emitter Breakdown (Max): 60V
  • Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 1W
  • Frequency - Transition: 75MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body
  • Supplier Device Package: TO-226
封装: TO-226-3, TO-92-3 Long Body
库存5,760
3A
60V
350mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
1W
75MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body
TO-226
KSC1675COBU
Fairchild/ON Semiconductor

TRANS NPN 30V 0.05A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V
  • Power - Max: 250mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存2,256
50mA
30V
300mV @ 1mA, 10mA
100nA (ICBO)
70 @ 1mA, 6V
250mW
300MHz
-
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
hot BU941ZP
STMicroelectronics

TRANS NPN DARL 350V 15A TO-247

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 15A
  • Voltage - Collector Emitter Breakdown (Max): 350V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 300mA, 12A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 5A, 10V
  • Power - Max: 155W
  • Frequency - Transition: -
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-247-3
  • Supplier Device Package: TO-247-3
封装: TO-247-3
库存17,604
15A
350V
2V @ 300mA, 12A
100µA
300 @ 5A, 10V
155W
-
175°C (TJ)
Through Hole
TO-247-3
TO-247-3
FMMT549TC
Diodes Incorporated

TRANS PNP 30V 1A SOT23-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1A
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
  • Power - Max: 500mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存6,032
1A
30V
750mV @ 200mA, 2A
100nA (ICBO)
100 @ 500mA, 2V
500mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC546TAR
Fairchild/ON Semiconductor

TRANS NPN 65V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存2,464
100mA
65V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
hot BC547
Fairchild/ON Semiconductor

TRANS NPN 45V 0.1A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
  • Power - Max: 500mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存6,732,012
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
110 @ 2mA, 5V
500mW
300MHz
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
2SA10350SL
Panasonic Electronic Components

TRANS PNP 55V 0.05A MINI-3

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 50mA
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 260 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 200MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: Mini3-G1
封装: TO-236-3, SC-59, SOT-23-3
库存5,968
50mA
55V
600mV @ 10mA, 100mA
1µA
260 @ 2mA, 5V
200mW
200MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
Mini3-G1
FJA4313OTU
Fairchild/ON Semiconductor

TRANS NPN 250V 17A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 17A
  • Voltage - Collector Emitter Breakdown (Max): 250V
  • Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
  • Current - Collector Cutoff (Max): 500nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 7A, 5V
  • Power - Max: 130W
  • Frequency - Transition: 30MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: TO-3P-3, SC-65-3
库存7,440
17A
250V
3V @ 800mA, 8A
500nA (ICBO)
35 @ 7A, 5V
130W
30MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
hot BCX71J
Fairchild/ON Semiconductor

TRANS PNP 45V 0.1A SOT-23

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 550mV @ 1.25mA, 50mA
  • Current - Collector Cutoff (Max): 20nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存11,730,156
100mA
45V
550mV @ 1.25mA, 50mA
20nA
250 @ 2mA, 5V
350mW
-
-
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
BC850BW,115
Nexperia USA Inc.

TRANS NPN 45V 0.1A SOT323

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): 15nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
  • Power - Max: 200mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323-3
封装: SC-70, SOT-323
库存29,058
100mA
45V
600mV @ 5mA, 100mA
15nA (ICBO)
200 @ 2mA, 5V
200mW
100MHz
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323-3
hot BD238STU
Fairchild/ON Semiconductor

TRANS PNP 80V 2A TO-126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 2A
  • Voltage - Collector Emitter Breakdown (Max): 80V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
  • Power - Max: 25W
  • Frequency - Transition: 3MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
封装: TO-225AA, TO-126-3
库存6,736
2A
80V
600mV @ 100mA, 1A
100µA (ICBO)
25 @ 1A, 2V
25W
3MHz
150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
2N4424
Central Semiconductor Corp

TRANS NPN 40V 0.5A TO-92

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 3mA, 50mA
  • Current - Collector Cutoff (Max): 30nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 4.5V
  • Power - Max: 625mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92
封装: TO-226-3, TO-92-3 (TO-226AA)
库存15,474
500mA
40V
300mV @ 3mA, 50mA
30nA
180 @ 2mA, 4.5V
625mW
-
-65°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92
hot MMBT6427
Fairchild/ON Semiconductor

TRANS NPN DARL 40V 1.2A SOT-23

  • Transistor Type: NPN - Darlington
  • Current - Collector (Ic) (Max): 1.2A
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500µA, 500mA
  • Current - Collector Cutoff (Max): 1µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 14000 @ 500mA, 5V
  • Power - Max: 350mW
  • Frequency - Transition: -
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封装: TO-236-3, SC-59, SOT-23-3
库存347,844
1.2A
40V
1.5V @ 500µA, 500mA
1µA
14000 @ 500mA, 5V
350mW
-
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
2SA1163-GR,LF
Toshiba Semiconductor and Storage

TRANS PNP 120V 0.1A SMINI

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100mA
  • Voltage - Collector Emitter Breakdown (Max): 120V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
  • Power - Max: 150mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 125°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: S-Mini
封装: TO-236-3, SC-59, SOT-23-3
库存67,398
100mA
120V
300mV @ 1mA, 10mA
100nA (ICBO)
200 @ 2mA, 6V
150mW
100MHz
125°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
S-Mini
BC817-40,235
Nexperia USA Inc.

TRANS NPN 45V 0.5A SOT23

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 500mA
  • Voltage - Collector Emitter Breakdown (Max): 45V
  • Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100mA, 1V
  • Power - Max: 250mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存7,168
500mA
45V
700mV @ 50mA, 500mA
100nA (ICBO)
250 @ 100mA, 1V
250mW
100MHz
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
NTE2308
NTE Electronics, Inc

TRANS NPN 400V 12A TO3P

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 12 A
  • Voltage - Collector Emitter Breakdown (Max): 400 V
  • Vce Saturation (Max) @ Ib, Ic: 1V @ 1.6A, 8A
  • Current - Collector Cutoff (Max): 10µA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 1.6A, 5V
  • Power - Max: 2.5 W
  • Frequency - Transition: 20MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3P
封装: -
Request a Quote
12 A
400 V
1V @ 1.6A, 8A
10µA (ICBO)
15 @ 1.6A, 5V
2.5 W
20MHz
150°C (TJ)
Through Hole
TO-3P-3, SC-65-3
TO-3P
NTE2431
NTE Electronics, Inc

TRANS PNP 300V 1A SOT89

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 300 V
  • Vce Saturation (Max) @ Ib, Ic: 2V @ 5mA, 50mA
  • Current - Collector Cutoff (Max): 50µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Power - Max: 1 W
  • Frequency - Transition: 15MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: -
Request a Quote
1 A
300 V
2V @ 5mA, 50mA
50µA
30 @ 50mA, 10V
1 W
15MHz
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
KA4A4M-0-T1-AT
Renesas Electronics Corporation

TRANSISTOR NPN USM SC-75

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
MSD602-RT1
onsemi

TRANS GP NPN 100MA 50V SC59

  • Transistor Type: -
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Vce Saturation (Max) @ Ib, Ic: -
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: -
  • Frequency - Transition: -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
BCW30LT3
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 2mA, 5V
  • Power - Max: 300 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封装: -
Request a Quote
100 mA
32 V
300mV @ 500µA, 10mA
100nA (ICBO)
215 @ 2mA, 5V
300 mW
-
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
BCP53-16-AU_R2_000A1
Panjit International Inc.

TRANS PNP 100V 1A SOT223

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 1 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
  • Current - Collector Cutoff (Max): 100nA (ICBO)
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
  • Power - Max: 2.6 W
  • Frequency - Transition: 100MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: -
Request a Quote
1 A
100 V
600mV @ 100mA, 1A
100nA (ICBO)
100 @ 150mA, 2V
2.6 W
100MHz
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
JANKCA2N2369A
Microchip Technology

TRANS NPN 15V TO18

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): -
  • Voltage - Collector Emitter Breakdown (Max): 15 V
  • Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
  • Current - Collector Cutoff (Max): 400nA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
  • Power - Max: 360 mW
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C
  • Mounting Type: Through Hole
  • Package / Case: TO-206AA, TO-18-3 Metal Can
  • Supplier Device Package: TO-18
封装: -
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-
15 V
450mV @ 10mA, 100mA
400nA
20 @ 100mA, 1V
360 mW
-
-65°C ~ 200°C
Through Hole
TO-206AA, TO-18-3 Metal Can
TO-18
BC847CTT1G
onsemi

TRANS NPN GP 45V 100MA SC75-3

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 100 mA
  • Voltage - Collector Emitter Breakdown (Max): 45 V
  • Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
  • Power - Max: 200 mW
  • Frequency - Transition: 100MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: SC-75, SOT-416
封装: -
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100 mA
45 V
600mV @ 5mA, 100mA
-
420 @ 2mA, 5V
200 mW
100MHz
-55°C ~ 150°C (TJ)
Surface Mount
SC-75, SOT-416
SC-75, SOT-416
2SA1743-AZ
Renesas Electronics Corporation

POWER BIPOLAR TRANSISTOR, PNP

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 10 A
  • Voltage - Collector Emitter Breakdown (Max): 60 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 400mA, 8A
  • Current - Collector Cutoff (Max): 1mA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 2A, 2V
  • Power - Max: 2 W
  • Frequency - Transition: 80MHz
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: MP-45F
封装: -
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10 A
60 V
500mV @ 400mA, 8A
1mA
100 @ 2A, 2V
2 W
80MHz
150°C (TJ)
Through Hole
TO-220-3 Full Pack, Isolated Tab
MP-45F
2N5284
Microchip Technology

POWER BJT

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 5 A
  • Voltage - Collector Emitter Breakdown (Max): 100 V
  • Vce Saturation (Max) @ Ib, Ic: 1.5V @ 2.5mA, 5mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Power - Max: 50 W
  • Frequency - Transition: -
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Stud Mount
  • Package / Case: TO-210AA, TO-59-4, Stud
  • Supplier Device Package: TO-59
封装: -
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5 A
100 V
1.5V @ 2.5mA, 5mA
-
-
50 W
-
-65°C ~ 200°C (TJ)
Stud Mount
TO-210AA, TO-59-4, Stud
TO-59
BD436-BP
Micro Commercial Co

TRANS PNP 32V 4A TO126

  • Transistor Type: PNP
  • Current - Collector (Ic) (Max): 4 A
  • Voltage - Collector Emitter Breakdown (Max): 32 V
  • Vce Saturation (Max) @ Ib, Ic: 500mV @ 200mA, 2A
  • Current - Collector Cutoff (Max): 100µA
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 2A, 1V
  • Power - Max: 1.25 W
  • Frequency - Transition: 3MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-225AA, TO-126-3
  • Supplier Device Package: TO-126
封装: -
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4 A
32 V
500mV @ 200mA, 2A
100µA
50 @ 2A, 1V
1.25 W
3MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-225AA, TO-126-3
TO-126
2N3904RLRAH
onsemi

SMALL SIGNAL BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Current - Collector (Ic) (Max): 200 mA
  • Voltage - Collector Emitter Breakdown (Max): 40 V
  • Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
  • Current - Collector Cutoff (Max): -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
  • Power - Max: 625 mW
  • Frequency - Transition: 300MHz
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
  • Supplier Device Package: TO-92 (TO-226)
封装: -
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200 mA
40 V
300mV @ 5mA, 50mA
-
100 @ 10mA, 1V
625 mW
300MHz
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Long Body (Formed Leads)
TO-92 (TO-226)