页 9 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 黑森尔电子
联系我们
SalesDept@heisener.com +86-755-83210559 ext. 807

晶体管 - 双极 (BJT) - 射频

记录 1,249
页  9/42
图片
零件编号
制造商
描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFR 93AW E6327
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
  • Gain: 10.5dB ~ 15.5dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 30mA, 8V
  • Current - Collector (Ic) (Max): 90mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
封装: SC-70, SOT-323
库存6,336
12V
6GHz
1.5dB ~ 2.6dB @ 900MHz ~ 1.8GHz
10.5dB ~ 15.5dB
300mW
70 @ 30mA, 8V
90mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
PG-SOT323-3
BFR 183T E6327
Infineon Technologies

TRANSISTOR RF NPN 12V SC-75

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
  • Gain: 19.5dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 15mA, 8V
  • Current - Collector (Ic) (Max): 65mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-75, SOT-416
  • Supplier Device Package: PG-SC-75
封装: SC-75, SOT-416
库存5,808
12V
8GHz
1.2dB ~ 2dB @ 900MHz ~ 1.8GHz
19.5dB
250mW
50 @ 15mA, 8V
65mA
150°C (TJ)
Surface Mount
SC-75, SOT-416
PG-SC-75
NE462M02-T1-AZ
CEL

RF TRANSISTOR NPN SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 6GHz
  • Noise Figure (dB Typ @ f): 3.5dB @ 1GHz
  • Gain: 10dB
  • Power - Max: 1.8W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 50mA, 5V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: -
封装: TO-243AA
库存2,368
12V
6GHz
3.5dB @ 1GHz
10dB
1.8W
50 @ 50mA, 5V
150mA
150°C (TJ)
Surface Mount
TO-243AA
-
hot 2SC5753-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.7dB @ 2GHz
  • Gain: 13.5dB
  • Power - Max: 205mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
封装: SOT-343F
库存14,856
6V
12GHz
1.7dB @ 2GHz
13.5dB
205mW
75 @ 30mA, 3V
100mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
MS1202
Microsemi Corporation

TRANS RF BIPO 15W 1A M135

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 35V
  • Frequency - Transition: 118MHz ~ 136MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.4dB
  • Power - Max: 15W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 5 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 1A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M135
  • Supplier Device Package: M135
封装: M135
库存3,120
35V
118MHz ~ 136MHz
-
8.4dB
15W
5 @ 100mA, 5V
1A
200°C (TJ)
Chassis Mount
M135
M135
hot MS2214
Microsemi Corporation

TRANS BIPO NPN 300W 8A M218

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 55V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 300W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2A, 5V
  • Current - Collector (Ic) (Max): 8A
  • Operating Temperature: 250°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M218
  • Supplier Device Package: M218
封装: M218
库存5,360
55V
960MHz ~ 1.215GHz
-
7.5dB
300W
20 @ 2A, 5V
8A
250°C (TJ)
Chassis Mount
M218
M218
2225-4L
Microsemi Corporation

TRANS RF BIPO 10W 600MA 55LV1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 40V
  • Frequency - Transition: 2.2GHz ~ 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 8.5dB
  • Power - Max: 10W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 200mA, 5V
  • Current - Collector (Ic) (Max): 600mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55LV
  • Supplier Device Package: 55LV
封装: 55LV
库存3,712
40V
2.2GHz ~ 2.5GHz
-
8.5dB
10W
20 @ 200mA, 5V
600mA
200°C (TJ)
Chassis Mount
55LV
55LV
NE68030-T1-R45-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.9dB @ 2GHz
  • Gain: 9.4dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 5mA, 3V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: SC-70, SOT-323
库存2,720
10V
10GHz
1.9dB @ 2GHz
9.4dB
150mW
125 @ 5mA, 3V
35mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
BFG540W/XR,135
NXP

TRANS RF NPN 9GHZ 15V SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封装: SC-82A, SOT-343
库存4,160
15V
9GHz
1.3dB ~ 2.4dB @ 900MHz
-
500mW
100 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
MPSH81_D27Z
Fairchild/ON Semiconductor

TRANS RF PNP 20V 50MA TO-92

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,968
20V
600MHz
-
-
350mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
BLS2731-10,114
NXP

TRANSISTOR RF POWER SOT445C

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 75V
  • Frequency - Transition: 3.1GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB
  • Power - Max: 145W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 250mA, 5V
  • Current - Collector (Ic) (Max): 1.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-445C
  • Supplier Device Package: CDFM2
封装: SOT-445C
库存2,544
75V
3.1GHz
-
10dB
145W
40 @ 250mA, 5V
1.5A
200°C (TJ)
Surface Mount
SOT-445C
CDFM2
NE68539-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 180mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存7,584
6V
12GHz
1.5dB @ 2GHz
11dB
180mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE68039-A
CEL

RF TRANSISTOR NPN SOT-143

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 11dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-253-4, TO-253AA
  • Supplier Device Package: SOT-143
封装: TO-253-4, TO-253AA
库存2,000
10V
10GHz
1.8dB @ 2GHz
11dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-253-4, TO-253AA
SOT-143
NE94430-T1-A
CEL

TRANS NPN OSC FT=2GHZ SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 2GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: SC-70, SOT-323
库存7,424
15V
2GHz
-
-
150mW
40 @ 5mA, 10V
50mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
hot MMBT5770
Fairchild/ON Semiconductor

TRANSISTOR RF NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 10mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3
封装: TO-236-3, SC-59, SOT-23-3
库存432,000
15V
600MHz
-
-
225mW
30 @ 3mA, 1V
10mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
KSC2786YBU
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 20MA TO-92S

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 3dB ~ 5dB @ 100MHz
  • Gain: 18dB ~ 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 Short Body
  • Supplier Device Package: TO-92S
封装: TO-226-3, TO-92-3 Short Body
库存4,752
20V
600MHz
3dB ~ 5dB @ 100MHz
18dB ~ 22dB
250mW
120 @ 1mA, 6V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 Short Body
TO-92S
hot KSC2756YMTF
Fairchild/ON Semiconductor

TRANSISTOR NPN 20V 30MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 850MHz
  • Noise Figure (dB Typ @ f): 6.5dB @ 200MHz
  • Gain: 15dB ~ 23dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23-3 (TO-236)
封装: TO-236-3, SC-59, SOT-23-3
库存2,088,000
20V
850MHz
6.5dB @ 200MHz
15dB ~ 23dB
150mW
120 @ 5mA, 10V
30mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
NE68033-A
CEL

RF TRANSISTOR NPN SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): 1.8dB @ 2GHz
  • Gain: 9dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 6V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存7,520
10V
10GHz
1.8dB @ 2GHz
9dB
200mW
50 @ 10mA, 6V
35mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
NE46134-T1
CEL

TRANS NPN 1GHZ SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 5.5GHz
  • Noise Figure (dB Typ @ f): 1.5dB ~ 2dB @ 500MHz ~ 1GHz
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 250mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: SOT-89
封装: TO-243AA
库存3,344
15V
5.5GHz
1.5dB ~ 2dB @ 500MHz ~ 1GHz
-
2W
40 @ 50mA, 10V
250mA
150°C (TJ)
Surface Mount
TO-243AA
SOT-89
DME800
Microsemi Corporation

TRANS RF BIPO 2500 50A 55ST1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9dB ~ 10dB
  • Power - Max: 2500W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 600mA, 5V
  • Current - Collector (Ic) (Max): 50A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55ST-1
  • Supplier Device Package: 55ST-1
封装: 55ST-1
库存4,624
65V
1.025GHz ~ 1.15GHz
-
9dB ~ 10dB
2500W
20 @ 600mA, 5V
50A
200°C (TJ)
Chassis Mount
55ST-1
55ST-1
JAN2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存6,032
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
AT-32063-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 32MA SOT-363

  • Transistor Type: 2 NPN (Dual)
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 1.1dB ~ 1.4dB @ 900MHz
  • Gain: 12.5dB ~ 14.5dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 2.7V
  • Current - Collector (Ic) (Max): 32mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 6-TSSOP, SC-88, SOT-363
  • Supplier Device Package: SOT-363
封装: 6-TSSOP, SC-88, SOT-363
库存3,776
5.5V
-
1.1dB ~ 1.4dB @ 900MHz
12.5dB ~ 14.5dB
150mW
50 @ 5mA, 2.7V
32mA
150°C (TJ)
Surface Mount
6-TSSOP, SC-88, SOT-363
SOT-363
AT-31033-TR2G
Broadcom Limited

TRANS NPN BIPO 5.5V 16MA SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5.5V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz
  • Gain: 9dB ~ 11dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 2.7V
  • Current - Collector (Ic) (Max): 16mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存4,432
5.5V
-
0.9dB ~ 1.2dB @ 900MHz
9dB ~ 11dB
150mW
70 @ 1mA, 2.7V
16mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
DSC9G0200L
Panasonic Electronic Components

TRANS RF NPN 20V 15MA SSMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 650MHz
  • Noise Figure (dB Typ @ f): 3.3dB @ 100MHz
  • Gain: 24dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 65 @ 1mA, 6V
  • Current - Collector (Ic) (Max): 15mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
封装: SC-89, SOT-490
库存2,512
20V
650MHz
3.3dB @ 100MHz
24dB
125mW
65 @ 1mA, 6V
15mA
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
BFU520XRVL
NXP

TRANS RF NPN 12V 30MA SOT-143R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 10.5GHz
  • Noise Figure (dB Typ @ f): 1dB @ 1.8GHz
  • Gain: 17.5dB
  • Power - Max: 450mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -40°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-143R
  • Supplier Device Package: SOT-143R
封装: SOT-143R
库存3,008
12V
10.5GHz
1dB @ 1.8GHz
17.5dB
450mW
60 @ 5mA, 8V
30mA
-40°C ~ 150°C (TJ)
Surface Mount
SOT-143R
SOT-143R
NE664M04-T2-A
CEL

RF TRANSISTOR NPN SOT-343F

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 5V
  • Frequency - Transition: 20GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 12dB
  • Power - Max: 735mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343F
  • Supplier Device Package: SOT-343F
封装: SOT-343F
库存5,136
5V
20GHz
-
12dB
735mW
40 @ 100mA, 3V
500mA
150°C (TJ)
Surface Mount
SOT-343F
SOT-343F
BFR840L3RHESDE6327XTSA1
Infineon Technologies

TRANS RF BIPO NPN 35MA TSLP-3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.6V
  • Frequency - Transition: 75GHz
  • Noise Figure (dB Typ @ f): 0.5dB @ 450MHz
  • Gain: 27dB
  • Power - Max: 75mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 10mA, 1.8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-101, SOT-883
  • Supplier Device Package: TSLP-3-9
封装: SC-101, SOT-883
库存4,912
2.6V
75GHz
0.5dB @ 450MHz
27dB
75mW
150 @ 10mA, 1.8V
35mA
150°C (TJ)
Surface Mount
SC-101, SOT-883
TSLP-3-9
BFP640FH6327XTSA1
Infineon Technologies

TRANS RF NPN 4.5V 50MA 4TSFP

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.5V
  • Frequency - Transition: 40GHz
  • Noise Figure (dB Typ @ f): 0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 30mA, 3V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存3,072
4.5V
40GHz
0.65dB ~ 1.2dB @ 1.8GHz ~ 6GHz
23dB
200mW
110 @ 30mA, 3V
50mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
CMPT918 TR
Central Semiconductor Corp

TRANS NPN 30V 50MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): 6dB @ 60MHz
  • Gain: 11dB
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -65°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: TO-236-3, SC-59, SOT-23-3
库存3,024
15V
600MHz
6dB @ 60MHz
11dB
350mW
20 @ 3mA, 1V
50mA
-65°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
BFY90
Central Semiconductor Corp

TRANS NPN 30V TO72

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 1.4GHz
  • Noise Figure (dB Typ @ f): 5.5dB @ 800MHz
  • Gain: 23dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 25mA, 1V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封装: TO-206AF, TO-72-4 Metal Can
库存14,844
15V
1.4GHz
5.5dB @ 800MHz
23dB
200mW
20 @ 25mA, 1V
25mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72