页 21 - 晶体管 - 双极 (BJT) - 射频 | 分立半导体产品 | 深圳黑森尔电子
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晶体管 - 双极 (BJT) - 射频

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描述
封装
库存
数量
Voltage - Collector Emitter Breakdown (Max)
Frequency - Transition
Noise Figure (dB Typ @ f)
Gain
Power - Max
DC Current Gain (hFE) (Min) @ Ic, Vce
Current - Collector (Ic) (Max)
Operating Temperature
Mounting Type
Package / Case
Supplier Device Package
BFP182WE6327HTSA1
Infineon Technologies

TRANSISTOR NPN RF 12V SOT-343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
  • Gain: 22dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 8V
  • Current - Collector (Ic) (Max): 35mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存3,312
12V
8GHz
0.9dB ~ 1.3dB @ 900MHz ~ 1.8GHz
22dB
250mW
70 @ 10mA, 8V
35mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFR 181 E6780
Infineon Technologies

TRANSISTOR RF NPN 12V SOT-23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
  • Gain: 18.5dB
  • Power - Max: 175mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 5mA, 8V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: PG-SOT23-3
封装: TO-236-3, SC-59, SOT-23-3
库存6,592
12V
8GHz
0.9dB ~ 1.2dB @ 900MHz ~ 1.8GHz
18.5dB
175mW
70 @ 5mA, 8V
20mA
150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
PG-SOT23-3
MRF559T
Microsemi Corporation

COMM/BIPOLAR TRANSISTOR

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 16V
  • Frequency - Transition: 870MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.5dB
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 50mA, 10V
  • Current - Collector (Ic) (Max): 150mA
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
库存2,464
16V
870MHz
-
9.5dB
2W
30 @ 50mA, 10V
150mA
-
-
-
-
JANTXV2N4957UB
Microsemi Corporation

TRANS PNP 30V 30MA

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): 3.5dB @ 450MHz
  • Gain: 25dB
  • Power - Max: 200mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, No Lead
  • Supplier Device Package: UB
封装: 3-SMD, No Lead
库存7,360
30V
-
3.5dB @ 450MHz
25dB
200mW
30 @ 5mA, 10V
30mA
-65°C ~ 200°C (TJ)
Surface Mount
3-SMD, No Lead
UB
hot MRF323
M/A-Com Technology Solutions

TRANS RF NPN 33V 1.1A 244-04

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 33V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 11dB
  • Power - Max: 20W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 5V
  • Current - Collector (Ic) (Max): 2.2A
  • Operating Temperature: -
  • Mounting Type: Chassis Mount
  • Package / Case: 244-04
  • Supplier Device Package: 244-04, STYLE 1
封装: 244-04
库存6,080
33V
-
-
11dB
20W
20 @ 1A, 5V
2.2A
-
Chassis Mount
244-04
244-04, STYLE 1
BFG540W/XR,135
NXP

TRANS RF NPN 9GHZ 15V SOT343R

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 9GHz
  • Noise Figure (dB Typ @ f): 1.3dB ~ 2.4dB @ 900MHz
  • Gain: -
  • Power - Max: 500mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 40mA, 8V
  • Current - Collector (Ic) (Max): 120mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: CMPAK-4
封装: SC-82A, SOT-343
库存4,160
15V
9GHz
1.3dB ~ 2.4dB @ 900MHz
-
500mW
100 @ 40mA, 8V
120mA
175°C (TJ)
Surface Mount
SC-82A, SOT-343
CMPAK-4
BF959ZL1G
ON Semiconductor

TRANS RF NPN 20V 100MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 3dB @ 200MHz
  • Gain: -
  • Power - Max: 625mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,456
20V
700MHz
3dB @ 200MHz
-
625mW
40 @ 20mA, 10V
100mA
-55°C ~ 150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
NE85630-R25-A
CEL

RF TRANSISTOR NPN SOT-323

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 12V
  • Frequency - Transition: 4.5GHz
  • Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
  • Gain: 9dB
  • Power - Max: 150mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 125 @ 7mA, 3V
  • Current - Collector (Ic) (Max): 100mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: SOT-323
封装: SC-70, SOT-323
库存3,328
12V
4.5GHz
1.2dB @ 1GHz
9dB
150mW
125 @ 7mA, 3V
100mA
150°C (TJ)
Surface Mount
SC-70, SOT-323
SOT-323
KSC1393OTA
Fairchild/ON Semiconductor

TRANSISTOR NPN 30V 20MA TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 30V
  • Frequency - Transition: 700MHz
  • Noise Figure (dB Typ @ f): 2dB ~ 3dB @ 200MHz
  • Gain: 20dB ~ 24dB
  • Power - Max: 250mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
库存3,136
30V
700MHz
2dB ~ 3dB @ 200MHz
20dB ~ 24dB
250mW
60 @ 2mA, 10V
20mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
TO-92-3
SD1477
STMicroelectronics

TRANSISTOR NPN RF BIPO VHF 6LEAD

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 18V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 6dB
  • Power - Max: 270W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 5A, 5V
  • Current - Collector (Ic) (Max): 20A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: M111
  • Supplier Device Package: M111
封装: M111
库存3,504
18V
-
-
6dB
270W
10 @ 5A, 5V
20A
200°C (TJ)
Surface Mount
M111
M111
hot BF494
Fairchild/ON Semiconductor

TRANSISTOR RF NPN 20V TO-92

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 350mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 67 @ 1mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA)
  • Supplier Device Package: TO-92-3
封装: TO-226-3, TO-92-3 (TO-226AA)
库存6,703,236
20V
-
-
-
350mW
67 @ 1mA, 10V
30mA
150°C (TJ)
Through Hole
TO-226-3, TO-92-3 (TO-226AA)
TO-92-3
MBC13900T1
NXP

IC TRANS NPN RF LOW NOISE SC70-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6.5V
  • Frequency - Transition: 15GHz
  • Noise Figure (dB Typ @ f): 0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
  • Gain: 15dB ~ 22dB
  • Power - Max: 188mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 2V
  • Current - Collector (Ic) (Max): 20mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存5,200
6.5V
15GHz
0.8dB ~ 1.1dB @ 900MHz ~ 1.9GHz
15dB ~ 22dB
188mW
100 @ 5mA, 2V
20mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
BFG591,115
NXP

TRANS NPN 15V 7GHZ SOT-223

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 15V
  • Frequency - Transition: 7GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 2W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V
  • Current - Collector (Ic) (Max): 200mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-261-4, TO-261AA
  • Supplier Device Package: SOT-223
封装: TO-261-4, TO-261AA
库存4,736
15V
7GHz
-
-
2W
60 @ 70mA, 8V
200mA
150°C (TJ)
Surface Mount
TO-261-4, TO-261AA
SOT-223
BFP720FH6327XTSA1
Infineon Technologies

TRANS RF NPN 45GHZ 3.5V TSFP-4

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 4.7V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.4dB ~ 1dB @ 150MHz ~ 10GHz
  • Gain: 10.5dB ~ 28dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 13mA, 3V
  • Current - Collector (Ic) (Max): 25mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: 4-SMD, Flat Leads
  • Supplier Device Package: 4-TSFP
封装: 4-SMD, Flat Leads
库存2,400
4.7V
45GHz
0.4dB ~ 1dB @ 150MHz ~ 10GHz
10.5dB ~ 28dB
100mW
160 @ 13mA, 3V
25mA
150°C (TJ)
Surface Mount
4-SMD, Flat Leads
4-TSFP
MS2200
Microsemi Corporation

TRANS RF BIPO 1167W 43.2A MS102

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 400MHz ~ 500MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 9.7dB
  • Power - Max: 1167W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 5A, 5V
  • Current - Collector (Ic) (Max): 43.2A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: M102
  • Supplier Device Package: M102
封装: M102
库存7,408
65V
400MHz ~ 500MHz
-
9.7dB
1167W
20 @ 5A, 5V
43.2A
200°C (TJ)
Chassis Mount
M102
M102
1035MP
Microsemi Corporation

TRANS RF BIPO 125W 2.5A 55FW1

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: 1.025GHz ~ 1.15GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 10dB ~ 10.5dB
  • Power - Max: 125W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 2.5A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
封装: 55FW-1
库存7,664
65V
1.025GHz ~ 1.15GHz
-
10dB ~ 10.5dB
125W
20 @ 100mA, 5V
2.5A
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
1004MP
Microsemi Corporation

TRANS RF BIPO 7W 300MA 55FW1

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): 50V
  • Frequency - Transition: 960MHz ~ 1.215GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 7dB ~ 9dB
  • Power - Max: 7W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 5V
  • Current - Collector (Ic) (Max): 300mA
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 55FW-1
  • Supplier Device Package: 55FW-1
封装: 55FW-1
库存5,984
50V
960MHz ~ 1.215GHz
-
7dB ~ 9dB
7W
20 @ 100mA, 5V
300mA
200°C (TJ)
Chassis Mount
55FW-1
55FW-1
DSC9F0100L
Panasonic Electronic Components

RF TRANS NPN 10V 1.9GHZ SSMINI3

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 1.9GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 5mA, 4V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-89, SOT-490
  • Supplier Device Package: SSMini3-F3-B
封装: SC-89, SOT-490
库存5,808
10V
1.9GHz
-
-
125mW
75 @ 5mA, 4V
50mA
150°C (TJ)
Surface Mount
SC-89, SOT-490
SSMini3-F3-B
BFU725F/N1,115
NXP

TRANSISTOR NPN 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 2.8V
  • Frequency - Transition: 55GHz
  • Noise Figure (dB Typ @ f): 0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
  • Gain: 10dB ~ 24dB
  • Power - Max: 136mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-343 Reverse Pinning
  • Supplier Device Package: 4-SO
封装: SOT-343 Reverse Pinning
库存2,016
2.8V
55GHz
0.42dB ~ 1.1dB @ 1.5GHz ~ 12GHz
10dB ~ 24dB
136mW
160 @ 10mA, 2V
40mA
150°C (TJ)
Surface Mount
SOT-343 Reverse Pinning
4-SO
PBR941,215
NXP

TRANSISTOR NPN UHF 50MA SOT23

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 10V
  • Frequency - Transition: 8GHz
  • Noise Figure (dB Typ @ f): 1.4dB ~ 2dB @ 1GHz ~ 2GHz
  • Gain: -
  • Power - Max: 360mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 5mA, 6V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: 175°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: TO-236AB (SOT23)
封装: TO-236-3, SC-59, SOT-23-3
库存3,520
10V
8GHz
1.4dB ~ 2dB @ 1GHz ~ 2GHz
-
360mW
50 @ 5mA, 6V
50mA
175°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
TO-236AB (SOT23)
BFP520H6327XTSA1
Infineon Technologies

TRANS RF NPN 3.5V 40MA SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.5V
  • Frequency - Transition: 45GHz
  • Noise Figure (dB Typ @ f): 0.95dB @ 1.8GHz
  • Gain: 22.5dB
  • Power - Max: 100mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 20mA, 2V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: PG-SOT343-4
封装: SC-82A, SOT-343
库存24,738
3.5V
45GHz
0.95dB @ 1.8GHz
22.5dB
100mW
70 @ 20mA, 2V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
PG-SOT343-4
BFP842ESDH6327XTSA1
Infineon Technologies

IC TRANSISTOR RF NPN SOT343

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 3.7V
  • Frequency - Transition: 60GHz
  • Noise Figure (dB Typ @ f): 0.65dB @ 3.5GHz
  • Gain: 26dB
  • Power - Max: 120mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 15mA, 2.5V
  • Current - Collector (Ic) (Max): 40mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SC-82A, SOT-343
  • Supplier Device Package: SOT-343
封装: SC-82A, SOT-343
库存23,016
3.7V
60GHz
0.65dB @ 3.5GHz
26dB
120mW
150 @ 15mA, 2.5V
40mA
150°C (TJ)
Surface Mount
SC-82A, SOT-343
SOT-343
CMPTH81-BK
Central Semiconductor Corp

RF TRANS PNP 20V 600MHZ SOT23

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 20V
  • Frequency - Transition: 600MHz
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: 225mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
  • Current - Collector (Ic) (Max): 50mA
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package: SOT-23
封装: -
Request a Quote
20V
600MHz
-
-
225mW
60 @ 5mA, 10V
50mA
-55°C ~ 150°C (TJ)
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23
CM4957-PBFREE
Central Semiconductor Corp

RF TRANS PNP 25V 2.5GHZ TO72

  • Transistor Type: PNP
  • Voltage - Collector Emitter Breakdown (Max): 25V
  • Frequency - Transition: 2.5GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 25dB
  • Power - Max: 300mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 2mA, 10V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: -65°C ~ 200°C (TJ)
  • Mounting Type: Through Hole
  • Package / Case: TO-206AF, TO-72-4 Metal Can
  • Supplier Device Package: TO-72
封装: -
Request a Quote
25V
2.5GHz
-
25dB
300mW
20 @ 2mA, 10V
30mA
-65°C ~ 200°C (TJ)
Through Hole
TO-206AF, TO-72-4 Metal Can
TO-72
PH3135-90S
MACOM Technology Solutions

TRANSISTOR,90W,3.1-3.5GHZ,2US,10

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 65V
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: 7.5dB
  • Power - Max: 580W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): 10.7A
  • Operating Temperature: 200°C (TJ)
  • Mounting Type: Chassis Mount
  • Package / Case: 2L-FLG
  • Supplier Device Package: -
封装: -
Request a Quote
65V
-
-
7.5dB
580W
-
10.7A
200°C (TJ)
Chassis Mount
2L-FLG
-
2SC5435-T1-A
Renesas Electronics Corporation

SMALL SIGNAL BIPOLAR TRANSTR NPN

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 6V
  • Frequency - Transition: 12GHz
  • Noise Figure (dB Typ @ f): 1.5dB @ 2GHz
  • Gain: 8.5dB
  • Power - Max: 125mW
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 75 @ 10mA, 3V
  • Current - Collector (Ic) (Max): 30mA
  • Operating Temperature: 150°C (TJ)
  • Mounting Type: Surface Mount
  • Package / Case: SOT-623F
  • Supplier Device Package: 3-SuperMiniMold
封装: -
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6V
12GHz
1.5dB @ 2GHz
8.5dB
125mW
75 @ 10mA, 3V
30mA
150°C (TJ)
Surface Mount
SOT-623F
3-SuperMiniMold
MS3455
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NPT1010P
MACOM Technology Solutions

TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
42105
Microsemi Corporation

RF POWER TRANSISTOR

  • Transistor Type: -
  • Voltage - Collector Emitter Breakdown (Max): -
  • Frequency - Transition: -
  • Noise Figure (dB Typ @ f): -
  • Gain: -
  • Power - Max: -
  • DC Current Gain (hFE) (Min) @ Ic, Vce: -
  • Current - Collector (Ic) (Max): -
  • Operating Temperature: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
NESG250134-T1-AZ
CEL

TRANS NPN 900MHZ SOT-89

  • Transistor Type: NPN
  • Voltage - Collector Emitter Breakdown (Max): 9.2V
  • Frequency - Transition: 10GHz
  • Noise Figure (dB Typ @ f): -
  • Gain: 23dB
  • Power - Max: 1.5W
  • DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 3V
  • Current - Collector (Ic) (Max): 500mA
  • Operating Temperature: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-243AA
  • Supplier Device Package: 3-PowerMiniMold
封装: -
Request a Quote
9.2V
10GHz
-
23dB
1.5W
80 @ 100mA, 3V
500mA
-
Surface Mount
TO-243AA
3-PowerMiniMold