二极管 - 整流器 - 单

RF501B6STL

Rohm Semiconductor

DIODE GEN PURPOSE CPD

• Diode Type: -
• Voltage - DC Reverse (Vr) (Max): -
• Current - Average Rectified (Io): -
• Voltage - Forward (Vf) (Max) @ If: -
• Speed: -
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: -
• Capacitance @ Vr, F: -
• Mounting Type: -
• Package / Case: -
• Supplier Device Package: -
• Operating Temperature - Junction: -

封装: -

CDLL1A50

Microsemi Corporation

DIODE SCHOTTKY 50V 1A DO213AB

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 50V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 600mV @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100µA @ 50V
• Capacitance @ Vr, F: 0.9pF @ 5V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -

封装: DO-213AB, MELF

RB411D-TP

Micro Commercial Co

DIODE SCHOTTKY 20V 500MA SOT23

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 500mV @ 500mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 30µA @ 10V
• Capacitance @ Vr, F: 20pF @ 10V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23
• Operating Temperature - Junction: 125°C (Max)

封装: TO-236-3, SC-59, SOT-23-3

301UR140 G BK BL

Vishay Semiconductor Opto Division

DIODE GEN PURP 1.4KV 300A DO205

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1400V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.22V @ 942A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 15mA @ 1400V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis, Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB, DO-9
• Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-205AB, DO-9, Stud

R9G01822XX

Powerex Inc.

DIODE MODULE 1.8KV 2200A DO200AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 1800V
• Current - Average Rectified (Io): 2200A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1500A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 15µs
• Current - Reverse Leakage @ Vr: 150mA @ 1800V
• Capacitance @ Vr, F: -
• Mounting Type: Chassis Mount
• Package / Case: DO-200AB, B-PUK
• Supplier Device Package: DO-200AB, B-PUK
• Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

FESB16FTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 16A TO263AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 300V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 1.3V @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 10µA @ 300V
• Capacitance @ Vr, F: 175pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
• Supplier Device Package: TO-263AB
• Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

SFAF1603GHC0G

TSC America Inc.

DIODE, SUPER FAST, 16A, 150V, 35

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 16A
• Voltage - Forward (Vf) (Max) @ If: 975mV @ 16A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-2 Full Pack
• Supplier Device Package: ITO-220AC
• Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

GPP60DHE3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 6A P600

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 6A
• Voltage - Forward (Vf) (Max) @ If: 1.1V @ 6A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 5.5µs
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: P600, Axial
• Supplier Device Package: P600
• Operating Temperature - Junction: -55°C ~ 175°C

封装: P600, Axial

MUR320SHM6G

TSC America Inc.

DIODE, ULTRA FAST, 3A, 200V, 25N

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 875mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 25ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB, (SMC)
• Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AB, SMC

MURS360SHE3_A/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1.5A DO214AA

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 600V
• Current - Average Rectified (Io): 1.5A
• Voltage - Forward (Vf) (Max) @ If: 1.45V @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 75ns
• Current - Reverse Leakage @ Vr: 5µA @ 600V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Supplier Device Package: DO-214AA (SMB)
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AA, SMB

BAT46W-G3-08

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 150MA SOD123

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 150mA (DC)
• Voltage - Forward (Vf) (Max) @ If: 1V @ 250mA
• Speed: Small Signal =< 200mA (Io), Any Speed
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 5µA @ 75V
• Capacitance @ Vr, F: 6pF @ 1V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: 125°C (Max)

封装: SOD-123

MSE07PB-M3/89A

Vishay Semiconductor Diodes Division

DIODE GP 100V 700MA MICROSMP

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100V
• Current - Average Rectified (Io): 700mA
• Voltage - Forward (Vf) (Max) @ If: 1.08V @ 700mA
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 780ns
• Current - Reverse Leakage @ Vr: 1µA @ 100V
• Capacitance @ Vr, F: 5pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: MicroSMP
• Supplier Device Package: MicroSMP
• Operating Temperature - Junction: -55°C ~ 175°C

封装: MicroSMP

SS315LW RVG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 3A, 1

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 150V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10µA @ 150V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: SOD-123W
• Supplier Device Package: SOD123W
• Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123W

EGL41D-E3/96

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A DO213AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Capacitance @ Vr, F: 20pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-213AB, MELF (Glass)
• Supplier Device Package: DO-213AB
• Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

1N2440

Solid State Inc.

DIODE GEN PURP 250V 150A DO8

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 250 V
• Current - Average Rectified (Io): 150A
• Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 50 µA @ 250 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AA, DO-8, Stud
• Supplier Device Package: DO-8
• Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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S8KCH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 8A DO214AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 8A
• Voltage - Forward (Vf) (Max) @ If: 985 mV @ 8 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 48pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AB, SMC
• Supplier Device Package: DO-214AB (SMC)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

MBR390

Motorola

RECTIFIER DIODE, SCHOTTKY

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 90 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 600 µA @ 90 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: Axial
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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R50480

Microchip Technology

DIODE GP REV 800V 300A DO205AB

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 300A
• Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 75 µA @ 800 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-205AB, DO-9, Stud
• Supplier Device Package: DO-205AB (DO-9)
• Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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SFM12PL-TP

Micro Commercial Co

Interface

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 100 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123F
• Supplier Device Package: SOD-123FL
• Operating Temperature - Junction: -50°C ~ 150°C

封装: -

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SS22SHE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 20V 2A DO214AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 20 V
• Capacitance @ Vr, F: 130pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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B0520LW-7-F-2477

Diodes Incorporated

DIODE

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 20 V
• Current - Average Rectified (Io): 500mA
• Voltage - Forward (Vf) (Max) @ If: 385 mV @ 500 mA
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 250 µA @ 20 V
• Capacitance @ Vr, F: 170pF @ 0V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: SOD-123
• Supplier Device Package: SOD-123
• Operating Temperature - Junction: -65°C ~ 125°C

封装: -

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ZHCS500QTC

Diodes Incorporated

DIODE SCHOTTKY 40V 1A SOT23-3

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 780 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 10 ns
• Current - Reverse Leakage @ Vr: 40 µA @ 30 V
• Capacitance @ Vr, F: 20pF @ 25V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Supplier Device Package: SOT-23-3
• Operating Temperature - Junction: 125°C (Max)

封装: -

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ES2CA

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO214AC

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 150 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 150 V
• Capacitance @ Vr, F: 25pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: DO-214AC (SMA)
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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HERF1007GAH

Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 10A ITO220AB

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 800 V
• Current - Average Rectified (Io): 10A
• Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 80 ns
• Current - Reverse Leakage @ Vr: 10 µA @ 800 V
• Capacitance @ Vr, F: 40pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack, Isolated Tab
• Supplier Device Package: ITO-220AB
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

1N1435R

Solid State Inc.

DIODE GEN PURP REV 100V 40A DO5

• Diode Type: Standard, Reverse Polarity
• Voltage - DC Reverse (Vr) (Max): 100 V
• Current - Average Rectified (Io): 40A
• Voltage - Forward (Vf) (Max) @ If: 1.19 V @ 90 A
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 10 µA @ 100 V
• Capacitance @ Vr, F: -
• Mounting Type: Stud Mount
• Package / Case: DO-203AB, DO-5, Stud
• Supplier Device Package: DO-5
• Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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MBRA140T3

onsemi

DIODE SCHOTTKY 40V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -

封装: -

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SR204

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 2A DO204AC

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 40 V
• Current - Average Rectified (Io): 2A
• Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 500 µA @ 40 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Supplier Device Package: DO-204AC (DO-15)
• Operating Temperature - Junction: -55°C ~ 125°C

封装: -

B180AE-13

Diodes Incorporated

DIODE SCHOTTKY 80V 1A SMA

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 80 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 790 mV @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 200 µA @ 80 V
• Capacitance @ Vr, F: 27pF @ 4V, 1MHz
• Mounting Type: Surface Mount
• Package / Case: DO-214AC, SMA
• Supplier Device Package: SMA
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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SR320H

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 3A DO201AD

• Diode Type: Schottky
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 3A
• Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): -
• Current - Reverse Leakage @ Vr: 100 µA @ 200 V
• Capacitance @ Vr, F: -
• Mounting Type: Through Hole
• Package / Case: DO-201AD, Axial
• Supplier Device Package: DO-201AD
• Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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MUR120GP-TP

Micro Commercial Co

DIODE GEN PURP 200V 1A DO41

• Diode Type: Standard
• Voltage - DC Reverse (Vr) (Max): 200 V
• Current - Average Rectified (Io): 1A
• Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 45 ns
• Current - Reverse Leakage @ Vr: 5 µA @ 200 V
• Capacitance @ Vr, F: 10pF @ 4V, 1MHz
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Supplier Device Package: DO-41
• Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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