页 620 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
R5100815XXWA	Powerex Inc.	DIODE GEN PURP 800V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 7µs Current - Reverse Leakage @ Vr: 30mA @ 800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存5,888	800V	150A	1.4V @ 470A	Standard Recovery >500ns, > 200mA (Io)	7µs	30mA @ 800V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
D1800N44T VF	Infineon Technologies Industrial Power and Controls Americas	RECTIFIER DIODE 4800V 1800A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,296	-	-	-	-	-	-	-	-	-	-	-
D740N44T	Infineon Technologies Industrial Power and Controls Americas	DIODE RECTIFIER 3600V 1660A Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存3,248	-	-	-	-	-	-	-	-	-	-	-
MBR2090FCTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 20A 90V ITO220AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存6,960	-	-	-	-	-	-	-	-	-	-	-
5822SMJ/TR13	Microsemi Corporation	DIODE SCHOTTKY 40V 3A DO214AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5mA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存3,456	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5mA @ 40V	-	Surface Mount	DO-214AB, SMC	DO-214AB	-55°C ~ 150°C
VS-MBRB1035TRR-M3	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 35V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 35V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存3,472	35V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 35V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-65°C ~ 150°C
B350Q-13-F	Diodes Incorporated	DIODE SCHOTTKY 50V 3A SMC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 200pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存6,832	50V	3A	700mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	200pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC	-55°C ~ 150°C
AR1PG-M3/85A	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 400V 1A DO220AA Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 140ns Current - Reverse Leakage @ Vr: 1µA @ 400V Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-220AA	库存2,720	400V	1A	1.25V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	140ns	1µA @ 400V	12.5pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 175°C
SE30PADHM3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 3A DO-221BC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.3µs Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 13pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-221BC, SMA Flat Leads Exposed Pad	库存3,056	200V	3A	1.16V @ 3A	Standard Recovery >500ns, > 200mA (Io)	1.3µs	5µA @ 200V	13pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-55°C ~ 175°C
S1AFM-M3/6B	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO221AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.47µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-221AC, SMA Flat Leads	库存3,936	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	1.47µs	5µA @ 1000V	7.9pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-55°C ~ 150°C
ES1GL M2G	TSC America Inc.	DIODE, SUPER FAST, 1A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 8pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存3,856	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	8pF @ 1V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
DHG30I600HA	IXYS	DIODE GEN PURP 600V 30A TO247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3 Full Pack Supplier Device Package: TO-247 (HA) Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-3P-3 Full Pack	库存6,288	600V	30A	2.36V @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	50µA @ 600V	-	Through Hole	TO-3P-3 Full Pack	TO-247 (HA)	-55°C ~ 150°C
SB5100E-G	Comchip Technology	DIODE SCHOTTKY 100V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 500pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AD, Axial	库存33,342	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	500pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 150°C
V15PN50-M3/86A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 15A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 50V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存2,711,520	50V	15A	560mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	3mA @ 50V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
EGP31F-E3-C	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 3 µA @ 300 V Capacitance @ Vr, F: 48pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	300 V	3A	1.25 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	3 µA @ 300 V	48pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-65°C ~ 175°C
ER3A	SMC Diode Solutions	DIODE SUPERFST SMC 50V 35NS 150C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-65°C ~ 150°C
V2P6X-M3-H	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 60V 2A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 60 V Capacitance @ Vr, F: 240pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存54,147	60 V	2A	640 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 60 V	240pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-40°C ~ 175°C
S3D03065A	SMC Diode Solutions	DIODE SIL CARB 650V 3A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 5 µA @ 650 V Capacitance @ Vr, F: 179pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC (TO-220-2) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存165	650 V	3A	1.7 V @ 3 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 650 V	179pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220AC (TO-220-2)	-55°C ~ 175°C
JANTXV1N5417-TR	Microchip Technology	DIODE GEN PURP 200V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	200 V	3A	1.5 V @ 9 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	1 µA @ 200 V	-	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
STR10100LSS_AY_00301	Panjit International Inc.	DIODE SCHOTTKY 100V 10A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 100 V Capacitance @ Vr, F: 600pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	10A	720 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 100 V	600pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
CDLL0-5A20-TR	Microchip Technology	DIODE SCHOTTKY 20V 500MA DO213AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 20 V Capacitance @ Vr, F: 50pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA Supplier Device Package: DO-213AA Operating Temperature - Junction: -65°C ~ 125°C	封装: -	Request a Quote	20 V	500mA	650 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	10 µA @ 20 V	50pF @ 0V, 1MHz	Surface Mount	DO-213AA	DO-213AA	-65°C ~ 125°C
ZHCS506TA-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 40 µA @ 45 V Capacitance @ Vr, F: 20pF @ 25V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C	封装: -	Request a Quote	60 V	1A	630 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	40 µA @ 45 V	20pF @ 25V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	125°C
PU2DLS	Taiwan Semiconductor Corporation	25NS, 2A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 31pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存60,000	200 V	2A	930 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	31pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 175°C
JANTX1N4247-TR	Microchip Technology	DIODE GEN PURP 600V 1A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 5 µs Current - Reverse Leakage @ Vr: 1 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	1A	1.3 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	5 µs	1 µA @ 600 V	-	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
ES2GA_HF	Diodes Incorporated	SUPERFAST RECOVERY RECTIFIER SMA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	2A	1.25 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 400 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
MSASC100H45HS-TR	Microchip Technology	DIODE SCHOTTKY 45V 100A THINKEY1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™1 Supplier Device Package: ThinKey™1 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	45 V	100A	650 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	-	-	Surface Mount	ThinKey™1	ThinKey™1	-65°C ~ 150°C
GB25MPS17-247	GeneSiC Semiconductor	DIODE SIL CARB 1.7KV 52A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 52A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 1700 V Capacitance @ Vr, F: 2350pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1700 V	52A	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1700 V	2350pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
HERAF1605GH	Taiwan Semiconductor Corporation	50NS, 16A, 400V, HIGH EFFICIENT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 150pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存3,000	400 V	16A	1.3 V @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	10 µA @ 400 V	150pF @ 4V, 1MHz	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
SE40N3J-M3-I	Vishay	4A, 600V, STD , SM RECT,DFN33A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 1.68A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: DFN33A Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	600 V	1.68A	1.05 V @ 4 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 600 V	32pF @ 4V, 1MHz	Surface Mount	8-PowerVDFN	DFN33A	-55°C ~ 175°C
BAT54WHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 30V 200MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5 ns Current - Reverse Leakage @ Vr: 2 µA @ 25 V Capacitance @ Vr, F: 10pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存34,710	30 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	5 ns	2 µA @ 25 V	10pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C

R5100815XXWA

Powerex Inc.

DIODE GEN PURP 800V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 470A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7µs
Current - Reverse Leakage @ Vr: 30mA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存5,888

800V

150A

1.4V @ 470A

Standard Recovery >500ns, > 200mA (Io)

7µs

30mA @ 800V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

D1800N44T VF

Infineon Technologies Industrial Power and Controls Americas

RECTIFIER DIODE 4800V 1800A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,296

-

D740N44T

Infineon Technologies Industrial Power and Controls Americas

DIODE RECTIFIER 3600V 1660A

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存3,248

-

MBR2090FCTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 20A 90V ITO220AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存6,960

-

5822SMJ/TR13

Microsemi Corporation

DIODE SCHOTTKY 40V 3A DO214AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5mA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存3,456

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5mA @ 40V

-

Surface Mount

DO-214AB, SMC

DO-214AB

-55°C ~ 150°C

VS-MBRB1035TRR-M3

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 35V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存3,472

35V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 35V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-65°C ~ 150°C

B350Q-13-F

Diodes Incorporated

DIODE SCHOTTKY 50V 3A SMC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 200pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存6,832

50V

3A

700mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

200pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC

-55°C ~ 150°C

AR1PG-M3/85A

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 400V 1A DO220AA

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 140ns
Current - Reverse Leakage @ Vr: 1µA @ 400V
Capacitance @ Vr, F: 12.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-220AA

库存2,720

400V

1A

1.25V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

140ns

1µA @ 400V

12.5pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 175°C

SE30PADHM3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 3A DO-221BC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.16V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.3µs
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 13pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-221BC, SMA Flat Leads Exposed Pad

库存3,056

200V

3A

1.16V @ 3A

Standard Recovery >500ns, > 200mA (Io)

1.3µs

5µA @ 200V

13pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-55°C ~ 175°C

S1AFM-M3/6B

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO221AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.47µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 7.9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-221AC, SMA Flat Leads

库存3,936

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

1.47µs

5µA @ 1000V

7.9pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-55°C ~ 150°C

ES1GL M2G

TSC America Inc.

DIODE, SUPER FAST, 1A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 8pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存3,856

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

8pF @ 1V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

DHG30I600HA

IXYS

DIODE GEN PURP 600V 30A TO247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.36V @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3 Full Pack
Supplier Device Package: TO-247 (HA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-3P-3 Full Pack

库存6,288

600V

30A

2.36V @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

50µA @ 600V

-

Through Hole

TO-3P-3 Full Pack

TO-247 (HA)

-55°C ~ 150°C

SB5100E-G

Comchip Technology

DIODE SCHOTTKY 100V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 500pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AD, Axial

库存33,342

100V

5A

850mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

500pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 150°C

V15PN50-M3/86A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 15A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 560mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存2,711,520

50V

15A

560mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

3mA @ 50V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

EGP31F-E3-C

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 300V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 3 µA @ 300 V
Capacitance @ Vr, F: 48pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

300 V

3A

1.25 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

3 µA @ 300 V

48pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-65°C ~ 175°C

ER3A

SMC Diode Solutions

DIODE SUPERFST SMC 50V 35NS 150C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

50 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-65°C ~ 150°C

V2P6X-M3-H

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 2A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 60 V
Capacitance @ Vr, F: 240pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存54,147

60 V

2A

640 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 60 V

240pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-40°C ~ 175°C

S3D03065A

SMC Diode Solutions

DIODE SIL CARB 650V 3A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 5 µA @ 650 V
Capacitance @ Vr, F: 179pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC (TO-220-2)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存165

650 V

3A

1.7 V @ 3 A

No Recovery Time > 500mA (Io)

0 ns

5 µA @ 650 V

179pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220AC (TO-220-2)

-55°C ~ 175°C

JANTXV1N5417-TR

Microchip Technology

DIODE GEN PURP 200V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

200 V

3A

1.5 V @ 9 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

1 µA @ 200 V

-

Through Hole

B, Axial

-65°C ~ 175°C

STR10100LSS_AY_00301

Panjit International Inc.

DIODE SCHOTTKY 100V 10A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 100 V
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

10A

720 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 100 V

600pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

CDLL0-5A20-TR

Microchip Technology

DIODE SCHOTTKY 20V 500MA DO213AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 20 V
Capacitance @ Vr, F: 50pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA
Supplier Device Package: DO-213AA
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

Request a Quote

20 V

500mA

650 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

10 µA @ 20 V

50pF @ 0V, 1MHz

Surface Mount

DO-213AA

-65°C ~ 125°C

ZHCS506TA-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 40 µA @ 45 V
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C

封装: -

Request a Quote

60 V

1A

630 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

40 µA @ 45 V

20pF @ 25V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

125°C

PU2DLS

Taiwan Semiconductor Corporation

25NS, 2A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 31pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存60,000

200 V

2A

930 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

31pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 175°C

JANTX1N4247-TR

Microchip Technology

DIODE GEN PURP 600V 1A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

1A

1.3 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

5 µs

1 µA @ 600 V

-

Through Hole

A, Axial

-65°C ~ 175°C

ES2GA_HF

Diodes Incorporated

SUPERFAST RECOVERY RECTIFIER SMA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

2A

1.25 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 400 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

MSASC100H45HS-TR

Microchip Technology

DIODE SCHOTTKY 45V 100A THINKEY1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 100 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™1
Supplier Device Package: ThinKey™1
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

45 V

100A

650 mV @ 100 A

Fast Recovery =< 500ns, > 200mA (Io)

-

Surface Mount

ThinKey™1

-65°C ~ 150°C

GB25MPS17-247

GeneSiC Semiconductor

DIODE SIL CARB 1.7KV 52A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 52A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 1700 V
Capacitance @ Vr, F: 2350pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1700 V

52A

1.8 V @ 25 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 1700 V

2350pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

HERAF1605GH

Taiwan Semiconductor Corporation

50NS, 16A, 400V, HIGH EFFICIENT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存3,000

400 V

16A

1.3 V @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

10 µA @ 400 V

150pF @ 4V, 1MHz

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

SE40N3J-M3-I

Vishay

4A, 600V, STD , SM RECT,DFN33A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 1.68A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 4 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: DFN33A
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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600 V

1.68A

1.05 V @ 4 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 600 V

32pF @ 4V, 1MHz

Surface Mount

8-PowerVDFN

DFN33A

-55°C ~ 175°C

BAT54WHE3-TP

Micro Commercial Co

DIODE SCHOTTKY 30V 200MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Capacitance @ Vr, F: 10pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存34,710

30 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

5 ns

2 µA @ 25 V

10pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C