页 558 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC08D60C6Y	Infineon Technologies	DIODE GEN PURP 600V 30A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 30A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封装: Die	库存7,696	600V	30A (DC)	1.95V @ 30A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
RL107-N-0-1-BP	Micro Commercial Co	DIODE GEN PURP 1KV 1A A-405 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: Axial, Radial Bend Supplier Device Package: A-405 Operating Temperature - Junction: -55°C ~ 150°C	封装: Axial, Radial Bend	库存4,800	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	Axial, Radial Bend	A-405	-55°C ~ 150°C
1N4007GL-T	Diodes Incorporated	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 8pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存6,432	1000V	1A	1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 1000V	8pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
1N5821RL	STMicroelectronics	DIODE SCHOTTKY 30V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 30V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: 150°C (Max)	封装: DO-201AD, Axial	库存42,144	30V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 30V	-	Through Hole	DO-201AD, Axial	DO-201AD	150°C (Max)
VF30100S-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 30A ITO220AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: ITO-220AB Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-220-3 Full Pack, Isolated Tab	库存5,376	100V	30A	910mV @ 30A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 100V	-	Through Hole	TO-220-3 Full Pack, Isolated Tab	ITO-220AB	-40°C ~ 150°C
MBR7560	GeneSiC Semiconductor	DIODE SCHOTTKY 60V 75A DO5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存5,008	60V	75A	750mV @ 75A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-55°C ~ 150°C
1N2138A	GeneSiC Semiconductor	DIODE GEN PURP 600V 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-203AB, DO-5, Stud	库存2,512	600V	60A	1.1V @ 60A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
RM 11BV1	Sanken	DIODE GEN PURP 800V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存3,568	800V	1.2A	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Through Hole	Axial	Axial	-40°C ~ 150°C
1N5398GHA0G	TSC America Inc.	DIODE, 1.5A, 800V, AEC-Q101, DO- Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存2,944	800V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
V20PW15HM3/I	Vishay Semiconductor Diodes Division	RECT SCHKY 20A 150V SLIMDPAK Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.47V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 250µA @ 150V Capacitance @ Vr, F: 950pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存7,040	150V	20A	1.47V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	250µA @ 150V	950pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	SlimDPAK	-40°C ~ 150°C
RBR2MM30BTR	Rohm Semiconductor	DIODE SCHOTTKY 30V 2A PMDU Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80µA @ 30V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: PMDU Operating Temperature - Junction: 150°C (Max)	封装: SOD-123F	库存7,680	30V	2A	490mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	80µA @ 30V	-	Surface Mount	SOD-123F	PMDU	150°C (Max)
SBRT6U10LP-7	Diodes Incorporated	DIODE SBR 10V 6A U-DFN3030-8 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 480mV @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 10V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 8-PowerUDFN Supplier Device Package: U-DFN3030-8 Operating Temperature - Junction: -55°C ~ 150°C	封装: 8-PowerUDFN	库存3,936	10V	6A	480mV @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 10V	-	Surface Mount	8-PowerUDFN	U-DFN3030-8	-55°C ~ 150°C
MA3J74400L	Panasonic Electronic Components	DIODE SCHOTTKY 30V 200MA SMINI3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 3ns Current - Reverse Leakage @ Vr: 50µA @ 30V Capacitance @ Vr, F: 30pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-85 Supplier Device Package: SMini3-F1 Operating Temperature - Junction: 150°C (Max)	封装: SC-85	库存48,804	30V	200mA	550mV @ 200mA	Small Signal =< 200mA (Io), Any Speed	3ns	50µA @ 30V	30pF @ 0V, 1MHz	Surface Mount	SC-85	SMini3-F1	150°C (Max)
BAT 64 E6327	Infineon Technologies	DIODE SCHOTTKY 40V 120MA SOT23-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 120mA Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 5ns Current - Reverse Leakage @ Vr: 2µA @ 30V Capacitance @ Vr, F: 6pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: PG-SOT23-3 Operating Temperature - Junction: 150°C (Max)	封装: TO-236-3, SC-59, SOT-23-3	库存229,020	40V	120mA	750mV @ 100mA	Small Signal =< 200mA (Io), Any Speed	5ns	2µA @ 30V	6pF @ 1V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3	150°C (Max)
MBR15100-BP	Micro Commercial Co	DIODE SCHOTTKY 100V 15A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	15A	-	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 150°C
US5GC-HF	Comchip Technology	DIODE GEN PURP 400V 5A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	5A	1.3 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 400 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
PMEG3010EH-QX	Nexperia USA Inc.	PMEG3010EH-Q/SOD123F/SOD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 30 V Capacitance @ Vr, F: 55pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: 150°C	封装: -	库存9,000	30 V	1A	560 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 30 V	55pF @ 1V, 1MHz	Surface Mount	SOD-123F	SOD-123F	150°C
S1GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.5 µs Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存44,550	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	1.5 µs	1 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 175°C
HS15MLW	Taiwan Semiconductor Corporation	75NS, 1.5A, 1000V, HIGH EFFICIEN Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Current - Reverse Leakage @ Vr: 1 µA @ 1 kV Capacitance @ Vr, F: 9pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存60,000	1000 V	1.5A	1.7 V @ 1.5 A	Fast Recovery =< 500ns, > 200mA (Io)	75 ns	1 µA @ 1 kV	9pF @ 4V, 1MHz	Surface Mount	SOD-123W	SOD-123W	-55°C ~ 150°C
SA154	Diotec Semiconductor	DIODE FAST MELF 50V 300NS 175C Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-213AB, MELF Supplier Device Package: MELF DO-213AB Operating Temperature - Junction: -50°C ~ 175°C	封装: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 50 V	-	Surface Mount	DO-213AB, MELF	MELF DO-213AB	-50°C ~ 175°C
PCFFS05120AF	onsemi	DIODE SIL CARBIDE 1.2KV 5A DIE Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 1200 V Capacitance @ Vr, F: 337pF @ 1V, 100kHz Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Die Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	5A	1.75 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 1200 V	337pF @ 1V, 100kHz	Surface Mount	Die	Die	-55°C ~ 175°C
RB160SS-30T2R	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A KMD2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: KMD2 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	30 V	1A	520 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	35 µA @ 30 V	-	Surface Mount	0603 (1608 Metric)	KMD2	150°C
SDURK3060	SMC Diode Solutions	600V, 30A, ITO-220AC-2L, ULTRA F Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存2,400	-	-	-	-	-	-	-	-	-	-	-
CD214A-S1Q	Bourns Inc.	DIODE GEN PURP 1.2KV 1A 2SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: 2-SMD Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存35,637	1200 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	12pF @ 4V, 1MHz	Surface Mount	2-SMD, No Lead	2-SMD	-65°C ~ 175°C
S2BB-HF	Comchip Technology	DIODE GP 100V 2A SMB/DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB/DO-214AA Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	2A	1.1 V @ 2 A	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 100 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB/DO-214AA	-55°C ~ 150°C
V8PAM10S-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 100V 2.8A DO221BC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2.8A Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 180 µA @ 100 V Capacitance @ Vr, F: 600pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221BC, SMA Flat Leads Exposed Pad Supplier Device Package: DO-221BC (SMPA) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存55,182	100 V	2.8A	840 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	180 µA @ 100 V	600pF @ 4V, 1MHz	Surface Mount	DO-221BC, SMA Flat Leads Exposed Pad	DO-221BC (SMPA)	-40°C ~ 175°C
RFN20NS3STL	Rohm Semiconductor	DIODE GEN PURP 350V 20A LPDS Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 350 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 350 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: LPDS Operating Temperature - Junction: 150°C	封装: -	库存2,367	350 V	20A	1.35 V @ 20 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 350 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	LPDS	150°C
SD101BWHE3-TP	Micro Commercial Co	DIODE SCHOTTKY 50V 15MA SOD123 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 15mA Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 1 ns Current - Reverse Leakage @ Vr: 200 nA @ 40 V Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存18,000	50 V	15mA	950 mV @ 15 mA	Small Signal =< 200mA (Io), Any Speed	1 ns	200 nA @ 40 V	2.1pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-55°C ~ 125°C
1N6643U	Microchip Technology	DIODE GP 75V 300MA SQ-MELF B Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 500 nA @ 50 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, B Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	500 nA @ 50 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 200°C
1N4500E3	Microchip Technology	DIODE GEN PURP 80V 300MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80 V Current - Average Rectified (Io): 300mA Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 6 ns Current - Reverse Leakage @ Vr: 100 nA @ 75 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	80 V	300mA	1.1 V @ 300 mA	Fast Recovery =< 500ns, > 200mA (Io)	6 ns	100 nA @ 75 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C

SIDC08D60C6Y

Infineon Technologies

DIODE GEN PURP 600V 30A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 30A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 30A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封装: Die

库存7,696

600V

30A (DC)

1.95V @ 30A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

RL107-N-0-1-BP

Micro Commercial Co

DIODE GEN PURP 1KV 1A A-405

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: Axial, Radial Bend
Supplier Device Package: A-405
Operating Temperature - Junction: -55°C ~ 150°C

封装: Axial, Radial Bend

库存4,800

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

Axial, Radial Bend

A-405

-55°C ~ 150°C

1N4007GL-T

Diodes Incorporated

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存6,432

1000V

1A

1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 1000V

8pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

1N5821RL

STMicroelectronics

DIODE SCHOTTKY 30V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: 150°C (Max)

封装: DO-201AD, Axial

库存42,144

30V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 30V

-

Through Hole

DO-201AD, Axial

DO-201AD

150°C (Max)

VF30100S-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 30A ITO220AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 910mV @ 30A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: ITO-220AB
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-220-3 Full Pack, Isolated Tab

库存5,376

100V

30A

910mV @ 30A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 100V

-

Through Hole

TO-220-3 Full Pack, Isolated Tab

ITO-220AB

-40°C ~ 150°C

MBR7560

GeneSiC Semiconductor

DIODE SCHOTTKY 60V 75A DO5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 75A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存5,008

60V

75A

750mV @ 75A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-55°C ~ 150°C

1N2138A

GeneSiC Semiconductor

DIODE GEN PURP 600V 60A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 60A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-203AB, DO-5, Stud

库存2,512

600V

60A

1.1V @ 60A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

RM 11BV1

Sanken

DIODE GEN PURP 800V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存3,568

800V

1.2A

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Through Hole

Axial

-40°C ~ 150°C

1N5398GHA0G

TSC America Inc.

DIODE, 1.5A, 800V, AEC-Q101, DO-

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存2,944

800V

1.5A

1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 800V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

V20PW15HM3/I

Vishay Semiconductor Diodes Division

RECT SCHKY 20A 150V SLIMDPAK

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.47V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 250µA @ 150V
Capacitance @ Vr, F: 950pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存7,040

150V

20A

1.47V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

250µA @ 150V

950pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

SlimDPAK

-40°C ~ 150°C

RBR2MM30BTR

Rohm Semiconductor

DIODE SCHOTTKY 30V 2A PMDU

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80µA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: PMDU
Operating Temperature - Junction: 150°C (Max)

封装: SOD-123F

库存7,680

30V

2A

490mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

80µA @ 30V

-

Surface Mount

SOD-123F

PMDU

150°C (Max)

SBRT6U10LP-7

Diodes Incorporated

DIODE SBR 10V 6A U-DFN3030-8

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 10V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 480mV @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 10V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 8-PowerUDFN
Supplier Device Package: U-DFN3030-8
Operating Temperature - Junction: -55°C ~ 150°C

封装: 8-PowerUDFN

库存3,936

10V

6A

480mV @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 10V

-

Surface Mount

8-PowerUDFN

U-DFN3030-8

-55°C ~ 150°C

MA3J74400L

Panasonic Electronic Components

DIODE SCHOTTKY 30V 200MA SMINI3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 550mV @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3ns
Current - Reverse Leakage @ Vr: 50µA @ 30V
Capacitance @ Vr, F: 30pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: SMini3-F1
Operating Temperature - Junction: 150°C (Max)

封装: SC-85

库存48,804

30V

200mA

550mV @ 200mA

Small Signal =< 200mA (Io), Any Speed

3ns

50µA @ 30V

30pF @ 0V, 1MHz

Surface Mount

SC-85

SMini3-F1

150°C (Max)

BAT 64 E6327

Infineon Technologies

DIODE SCHOTTKY 40V 120MA SOT23-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 120mA
Voltage - Forward (Vf) (Max) @ If: 750mV @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5ns
Current - Reverse Leakage @ Vr: 2µA @ 30V
Capacitance @ Vr, F: 6pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: PG-SOT23-3
Operating Temperature - Junction: 150°C (Max)

封装: TO-236-3, SC-59, SOT-23-3

库存229,020

40V

120mA

750mV @ 100mA

Small Signal =< 200mA (Io), Any Speed

5ns

2µA @ 30V

6pF @ 1V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

PG-SOT23-3

150°C (Max)

MBR15100-BP

Micro Commercial Co

DIODE SCHOTTKY 100V 15A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

15A

-

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 150°C

US5GC-HF

Comchip Technology

DIODE GEN PURP 400V 5A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

5A

1.3 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 400 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

PMEG3010EH-QX

Nexperia USA Inc.

PMEG3010EH-Q/SOD123F/SOD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Capacitance @ Vr, F: 55pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: 150°C

封装: -

库存9,000

30 V

1A

560 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 30 V

55pF @ 1V, 1MHz

Surface Mount

SOD-123F

150°C

S1GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.5 µs
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存44,550

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

1.5 µs

1 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 175°C

HS15MLW

Taiwan Semiconductor Corporation

75NS, 1.5A, 1000V, HIGH EFFICIEN

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Current - Reverse Leakage @ Vr: 1 µA @ 1 kV
Capacitance @ Vr, F: 9pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存60,000

1000 V

1.5A

1.7 V @ 1.5 A

Fast Recovery =< 500ns, > 200mA (Io)

75 ns

1 µA @ 1 kV

9pF @ 4V, 1MHz

Surface Mount

SOD-123W

-55°C ~ 150°C

SA154

Diotec Semiconductor

DIODE FAST MELF 50V 300NS 175C

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Supplier Device Package: MELF DO-213AB
Operating Temperature - Junction: -50°C ~ 175°C

封装: -

Request a Quote

50 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

5 µA @ 50 V

-

Surface Mount

DO-213AB, MELF

MELF DO-213AB

-50°C ~ 175°C

PCFFS05120AF

onsemi

DIODE SIL CARBIDE 1.2KV 5A DIE

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 5 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 1200 V
Capacitance @ Vr, F: 337pF @ 1V, 100kHz
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Die
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

5A

1.75 V @ 5 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 1200 V

337pF @ 1V, 100kHz

Surface Mount

Die

-55°C ~ 175°C

RB160SS-30T2R

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A KMD2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0603 (1608 Metric)
Supplier Device Package: KMD2
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

30 V

1A

520 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

35 µA @ 30 V

-

Surface Mount

0603 (1608 Metric)

KMD2

150°C

SDURK3060

SMC Diode Solutions

600V, 30A, ITO-220AC-2L, ULTRA F

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存2,400

-

CD214A-S1Q

Bourns Inc.

DIODE GEN PURP 1.2KV 1A 2SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: 2-SMD
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存35,637

1200 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1200 V

12pF @ 4V, 1MHz

Surface Mount

2-SMD, No Lead

2-SMD

-65°C ~ 175°C

S2BB-HF

Comchip Technology

DIODE GP 100V 2A SMB/DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB/DO-214AA
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

2A

1.1 V @ 2 A

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 100 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB/DO-214AA

-55°C ~ 150°C

V8PAM10S-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 100V 2.8A DO221BC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2.8A
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 180 µA @ 100 V
Capacitance @ Vr, F: 600pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221BC, SMA Flat Leads Exposed Pad
Supplier Device Package: DO-221BC (SMPA)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存55,182

100 V

2.8A

840 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

180 µA @ 100 V

600pF @ 4V, 1MHz

Surface Mount

DO-221BC, SMA Flat Leads Exposed Pad

DO-221BC (SMPA)

-40°C ~ 175°C

RFN20NS3STL

Rohm Semiconductor

DIODE GEN PURP 350V 20A LPDS

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 350 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 20 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 350 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: LPDS
Operating Temperature - Junction: 150°C

封装: -

库存2,367

350 V

20A

1.35 V @ 20 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 350 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

LPDS

150°C

SD101BWHE3-TP

Micro Commercial Co

DIODE SCHOTTKY 50V 15MA SOD123

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 15mA
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 15 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1 ns
Current - Reverse Leakage @ Vr: 200 nA @ 40 V
Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存18,000

50 V

15mA

950 mV @ 15 mA

Small Signal =< 200mA (Io), Any Speed

1 ns

200 nA @ 40 V

2.1pF @ 0V, 1MHz

Surface Mount

SOD-123

-55°C ~ 125°C

1N6643U

Microchip Technology

DIODE GP 75V 300MA SQ-MELF B

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 500 nA @ 50 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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75 V

300mA

1.2 V @ 100 mA

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

500 nA @ 50 V

5pF @ 0V, 1MHz

Surface Mount

SQ-MELF, B

B, SQ-MELF

-65°C ~ 200°C

1N4500E3

Microchip Technology

DIODE GEN PURP 80V 300MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 80 V
Current - Average Rectified (Io): 300mA
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 300 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Current - Reverse Leakage @ Vr: 100 nA @ 75 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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80 V

300mA

1.1 V @ 300 mA

Fast Recovery =< 500ns, > 200mA (Io)

6 ns

100 nA @ 75 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C