页 546 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SBL1060	Diodes Incorporated	DIODE SCHOTTKY 60V 10A TO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2	库存9,780	60V	10A	750mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 60V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
PR1003GL-T	Diodes Incorporated	DIODE GEN PURP 200V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,760	200V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
VS-12FLR20S02	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存5,408	200V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	50µA @ 200V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
FR16J02	GeneSiC Semiconductor	DIODE GEN PURP 600V 16A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存5,328	600V	16A	900mV @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
HSM120JE3/TR13	Microsemi Corporation	DIODE SCHOTTKY 1A 20V SMAJ Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存5,760	-	-	-	-	-	-	-	-	-	-	-
SRA820 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 8A, 2 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-220-2	库存3,648	20V	8A	550mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 20V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 125°C
6A80G R0G	TSC America Inc.	DIODE, 6A, 800V, R-6 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1V @ 6A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: R6, Axial Supplier Device Package: R-6 Operating Temperature - Junction: -55°C ~ 150°C	封装: R6, Axial	库存7,488	800V	6A	1V @ 6A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	60pF @ 4V, 1MHz	Through Hole	R6, Axial	R-6	-55°C ~ 150°C
SS29L MTG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 9 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 90V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 90V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存3,424	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N5395G B0G	TSC America Inc.	DIODE, 1.5A, 400V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存6,448	400V	1.5A	1V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1G R3G	TSC America Inc.	DIODE, SUPER FAST, 1A, 400V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 18pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存5,616	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	18pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CMR3U-04M TR13	Central Semiconductor Corp	DIODE GEN PURP 400V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AB, SMC	库存2,336	400V	3A	1.25V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C
UF4007-E3/73	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存183,420	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
S1G-LTP	Micro Commercial Co	DIODE GP 400V 1A DO214AA HSMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 12pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA, HSMB Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 400 V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA, HSMB	-55°C ~ 150°C
PG4004_R2_00001	Panjit International Inc.	DIODE GEN PURP 400V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1A	1.1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	-	1 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
SF2DDF-13	Diodes Incorporated	DIODE GEN PURP 200V 2A DFLAT Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: D-Flat Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存30,000	200 V	2A	1.1 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	D-Flat	-55°C ~ 150°C
NTE6157	NTE Electronics, Inc	DIODE GEN PURP 600V 150A DO8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 12 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -40°C ~ 200°C	封装: -	Request a Quote	600 V	150A	1.4 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	12 mA @ 600 V	-	Stud Mount	DO-203AA, DO-8, Stud	DO-8	-40°C ~ 200°C
1N2441R	Solid State Inc.	DIODE GEN PURP REV 300V 150A DO8 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 300 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-8 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	300 V	150A	1.1 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	50 µA @ 300 V	-	Stud Mount	DO-205AA, DO-8, Stud	DO-8	-65°C ~ 200°C
B150-13-F-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 50 V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	1A	700 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 50 V	110pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C
APT75DQ120SG	Microchip Technology	DIODE GEN PURP 75A D3PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 325 ns Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Supplier Device Package: D3PAK Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	-	75A	3.3 V @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	325 ns	100 µA @ 1200 V	-	Surface Mount	TO-268-3, D3PAK (2 Leads + Tab), TO-268AA	D3PAK	-55°C ~ 175°C
CMSH3-200MFL-TR13-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 200V 3A SMAFLAT Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 200 V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SMAflat Operating Temperature - Junction: -65°C ~ 150°C	封装: -	库存81,759	200 V	3A	900 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 200 V	70pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SMAflat	-65°C ~ 150°C
VS-TH340BL12P-S2	Vishay General Semiconductor - Diodes Division	DIODE Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SB10015M-TL-E	onsemi	DIODE SCHOTTKY 15V 1A 3MCPH Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V Capacitance @ Vr, F: 20pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: 3-MCPH Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	15 V	1A	540 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	10 ns	3 µA @ 7.5 V	20pF @ 10V, 1MHz	Surface Mount	SC-70, SOT-323	3-MCPH	-55°C ~ 150°C
RB168VAM-30TR	Rohm Semiconductor	DIODE SCHOTTKY 30V 1A TUMD2M Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 nA @ 30 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: TUMD2M Operating Temperature - Junction: 150°C	封装: -	库存7,485	30 V	1A	730 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 nA @ 30 V	-	Surface Mount	2-SMD, Flat Lead	TUMD2M	150°C
JANTXV1N5195-TR	Microchip Technology	DIODE GEN PURP 180V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 180 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-204AH (DO-35) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	180 V	200mA	1 V @ 100 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 200 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-204AH (DO-35)	-65°C ~ 175°C
PMEG045T100EPEZ	Nexperia USA Inc.	DIODE SCHOTTKY 45V 10A CFP15B Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 545 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 80 µA @ 45 V Capacitance @ Vr, F: 600pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: CFP15B Operating Temperature - Junction: 175°C (Max)	封装: -	库存37,353	45 V	10A	545 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	80 µA @ 45 V	600pF @ 10V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	CFP15B	175°C (Max)
US1BWF-HF	Comchip Technology	DIODE GEN PURP 100V 1A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	15pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
WNSC6D20650B6J	WeEn Semiconductors	DIODE SIL CARBIDE 650V 20A D2PAK Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 80 µA @ 650 V Capacitance @ Vr, F: 780pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C	封装: -	库存15,024	650 V	20A	1.55 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 650 V	780pF @ 1V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	D2PAK	175°C
MUR30120BH-BP	Micro Commercial Co	DIODE FAST REC 30A 1.2KV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1200 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存5,400	1200 V	30A	2.4 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1200 V	-	Through Hole	TO-247-2	TO-247AD	-55°C ~ 175°C
JAN1N6942UTK3CS-TR	Microchip Technology	DIODE SCHOTTKY 45V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 45 V Capacitance @ Vr, F: 7000pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	45 V	150A	460 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 45 V	7000pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 175°C
BAS21QCZ	Nexperia USA Inc.	DIODE GP 200V 250MA DFN1412D-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 250mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount, Wettable Flank Package / Case: 3-XDFN Exposed Pad Supplier Device Package: DFN1412D-3 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	200 V	250mA	1.25 V @ 200 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount, Wettable Flank	3-XDFN Exposed Pad	DFN1412D-3	150°C

SBL1060

Diodes Incorporated

DIODE SCHOTTKY 60V 10A TO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

库存9,780

60V

10A

750mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 60V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

PR1003GL-T

Diodes Incorporated

DIODE GEN PURP 200V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,760

200V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

VS-12FLR20S02

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存5,408

200V

12A

1.4V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

50µA @ 200V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

FR16J02

GeneSiC Semiconductor

DIODE GEN PURP 600V 16A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存5,328

600V

16A

900mV @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

HSM120JE3/TR13

Microsemi Corporation

DIODE SCHOTTKY 1A 20V SMAJ

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存5,760

-

SRA820 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 2

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 550mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-220-2

库存3,648

20V

8A

550mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 20V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 125°C

6A80G R0G

TSC America Inc.

DIODE, 6A, 800V, R-6

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1V @ 6A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: R6, Axial
Supplier Device Package: R-6
Operating Temperature - Junction: -55°C ~ 150°C

封装: R6, Axial

库存7,488

800V

6A

1V @ 6A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

60pF @ 4V, 1MHz

Through Hole

R6, Axial

R-6

-55°C ~ 150°C

SS29L MTG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 9

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 90V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 90V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存3,424

90V

2A

850mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 90V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N5395G B0G

TSC America Inc.

DIODE, 1.5A, 400V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存6,448

400V

1.5A

1V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

ES1G R3G

TSC America Inc.

DIODE, SUPER FAST, 1A, 400V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存5,616

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

18pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CMR3U-04M TR13

Central Semiconductor Corp

DIODE GEN PURP 400V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AB, SMC

库存2,336

400V

3A

1.25V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 400V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C

UF4007-E3/73

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存183,420

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

S1G-LTP

Micro Commercial Co

DIODE GP 400V 1A DO214AA HSMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA, HSMB
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 400 V

12pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA, HSMB

-55°C ~ 150°C

PG4004_R2_00001

Panjit International Inc.

DIODE GEN PURP 400V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

1A

1.1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

-

1 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

SF2DDF-13

Diodes Incorporated

DIODE GEN PURP 200V 2A DFLAT

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: D-Flat
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存30,000

200 V

2A

1.1 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

D-Flat

-55°C ~ 150°C

NTE6157

NTE Electronics, Inc

DIODE GEN PURP 600V 150A DO8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 150 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -40°C ~ 200°C

封装: -

Request a Quote

600 V

150A

1.4 V @ 150 A

Standard Recovery >500ns, > 200mA (Io)

-

12 mA @ 600 V

-

Stud Mount

DO-203AA, DO-8, Stud

DO-8

-40°C ~ 200°C

1N2441R

Solid State Inc.

DIODE GEN PURP REV 300V 150A DO8

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 300 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-8
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

300 V

150A

1.1 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

50 µA @ 300 V

-

Stud Mount

DO-205AA, DO-8, Stud

DO-8

-65°C ~ 200°C

B150-13-F-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

50 V

1A

700 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 50 V

110pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C

APT75DQ120SG

Microchip Technology

DIODE GEN PURP 75A D3PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 325 ns
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Supplier Device Package: D3PAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

-

75A

3.3 V @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

325 ns

100 µA @ 1200 V

-

Surface Mount

TO-268-3, D3PAK (2 Leads + Tab), TO-268AA

D3PAK

-55°C ~ 175°C

CMSH3-200MFL-TR13-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 200V 3A SMAFLAT

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 200 V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SMAflat
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

库存81,759

200 V

3A

900 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 200 V

70pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SMAflat

-65°C ~ 150°C

VS-TH340BL12P-S2

Vishay General Semiconductor - Diodes Division

DIODE

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

SB10015M-TL-E

onsemi

DIODE SCHOTTKY 15V 1A 3MCPH

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Current - Reverse Leakage @ Vr: 3 µA @ 7.5 V
Capacitance @ Vr, F: 20pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: 3-MCPH
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

15 V

1A

540 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

10 ns

3 µA @ 7.5 V

20pF @ 10V, 1MHz

Surface Mount

SC-70, SOT-323

3-MCPH

-55°C ~ 150°C

RB168VAM-30TR

Rohm Semiconductor

DIODE SCHOTTKY 30V 1A TUMD2M

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 nA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: TUMD2M
Operating Temperature - Junction: 150°C

封装: -

库存7,485

30 V

1A

730 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 nA @ 30 V

-

Surface Mount

2-SMD, Flat Lead

TUMD2M

150°C

JANTXV1N5195-TR

Microchip Technology

DIODE GEN PURP 180V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 180 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

180 V

200mA

1 V @ 100 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 200 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-204AH (DO-35)

-65°C ~ 175°C

PMEG045T100EPEZ

Nexperia USA Inc.

DIODE SCHOTTKY 45V 10A CFP15B

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 545 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 80 µA @ 45 V
Capacitance @ Vr, F: 600pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: CFP15B
Operating Temperature - Junction: 175°C (Max)

封装: -

库存37,353

45 V

10A

545 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

80 µA @ 45 V

600pF @ 10V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

CFP15B

175°C (Max)

US1BWF-HF

Comchip Technology

DIODE GEN PURP 100V 1A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

15pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

WNSC6D20650B6J

WeEn Semiconductors

DIODE SIL CARBIDE 650V 20A D2PAK

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 20 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 80 µA @ 650 V
Capacitance @ Vr, F: 780pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: 175°C

封装: -

库存15,024

650 V

20A

1.55 V @ 20 A

No Recovery Time > 500mA (Io)

0 ns

80 µA @ 650 V

780pF @ 1V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

D2PAK

175°C

MUR30120BH-BP

Micro Commercial Co

DIODE FAST REC 30A 1.2KV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1200 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存5,400

1200 V

30A

2.4 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1200 V

-

Through Hole

TO-247-2

TO-247AD

-55°C ~ 175°C

JAN1N6942UTK3CS-TR

Microchip Technology

DIODE SCHOTTKY 45V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 45 V
Capacitance @ Vr, F: 7000pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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45 V

150A

460 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 45 V

7000pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 175°C

BAS21QCZ

Nexperia USA Inc.

DIODE GP 200V 250MA DFN1412D-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 250mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 3-XDFN Exposed Pad
Supplier Device Package: DFN1412D-3
Operating Temperature - Junction: 150°C

封装: -

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200 V

250mA

1.25 V @ 200 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount, Wettable Flank

3-XDFN Exposed Pad

DFN1412D-3

150°C