页 52 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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图片
零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
JAN1N1204AR
Microsemi Corporation

DIODE GEN PURP 400V 12A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-203AA, DO-4, Stud
库存2,032
400V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 400V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
hot JAN1N1206AR
Microsemi Corporation

DIODE GEN PURP 600V 12A DO203AA

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA (DO-4)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-203AA, DO-4, Stud
库存3,840
600V
12A
1.35V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 600V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA (DO-4)
-65°C ~ 150°C
VS-42HFR80M
Vishay Semiconductor Diodes Division

DIODE 40A BRAZ SQR DO5

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB (DO-5)
  • Operating Temperature - Junction: -65°C ~ 190°C
封装: DO-203AB, DO-5, Stud
库存5,120
800V
40A
1.3V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
-
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB (DO-5)
-65°C ~ 190°C
JANTX1N5554
Microsemi Corporation

DIODE GEN PURP 1KV 5A AXIAL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1000V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 9A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2µs
  • Current - Reverse Leakage @ Vr: 2µA @ 1000V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: B, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: B, Axial
库存2,592
1000V
5A
1.3V @ 9A
Standard Recovery >500ns, > 200mA (Io)
2µs
2µA @ 1000V
-
Through Hole
B, Axial
-
-65°C ~ 175°C
hot DH20-18A
IXYS

DIODE GEN PURP 1.8KV 20A TO247

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1800V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 2.24V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 300ns
  • Current - Reverse Leakage @ Vr: 50µA @ 1800V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-247-2
库存5,616
1800V
20A
2.24V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
300ns
50µA @ 1800V
-
Through Hole
TO-247-2
TO-247
-55°C ~ 150°C
VS-HFA08PB120-N3
Vishay Semiconductor Diodes Division

DIODE HEXFRED 8A 1200V TO-247AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 3.3V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 95ns
  • Current - Reverse Leakage @ Vr: 10µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AC Modified
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-247-2
库存4,976
1200V
8A
3.3V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
95ns
10µA @ 1200V
-
Through Hole
TO-247-2
TO-247AC Modified
-55°C ~ 150°C
VS-10ETS12-M3
Vishay Semiconductor Diodes Division

DIODE RECT 1200V 10A TO-220

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 10A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-2
库存3,232
1200V
10A
1.1V @ 10A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 1200V
-
Through Hole
TO-220-2
TO-220AC
-40°C ~ 150°C
SR815 R0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 8A, 1

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.02V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-201AD, Axial
库存3,776
150V
8A
1.02V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
HS2B M4G
TSC America Inc.

DIODE, HIGH EFFICIENT, 2A, 100V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AA, SMB
库存4,208
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
hot RS1PG-M3/84A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO220AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 400V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-220AA
  • Supplier Device Package: DO-220AA (SMP)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-220AA
库存216,000
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-220AA
DO-220AA (SMP)
-55°C ~ 150°C
hot MBRAF440T3G
ON Semiconductor

DIODE SCHOTTKY 40V 4A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 485mV @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 40V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMA-FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-221AC, SMA Flat Leads
库存262,920
40V
4A
485mV @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 40V
-
Surface Mount
DO-221AC, SMA Flat Leads
SMA-FL
-55°C ~ 150°C
CDBZ31060-HF
Comchip Technology

DIODE SCHOTTKY 60V 10A TO277

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 750mV @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277 (Z3)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存4,784
60V
10A
750mV @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 60V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277 (Z3)
-55°C ~ 150°C
JANS1N6642
Microsemi Corporation

DIODE GEN PURP 75V 300MA DO204AH

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 75V
  • Current - Average Rectified (Io): 300mA
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 75V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: -
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-204AH, DO-35, Axial
库存17,220
75V
300mA
1.2V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
5ns
500nA @ 75V
5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
-
-65°C ~ 175°C
VS-12F20
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 12A DO203AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.26V @ 38A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 12mA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-203AA
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-203AA, DO-4, Stud
库存6,832
200V
12A
1.26V @ 38A
Standard Recovery >500ns, > 200mA (Io)
-
12mA @ 200V
-
Chassis, Stud Mount
DO-203AA, DO-4, Stud
DO-203AA
-65°C ~ 175°C
S3D-TP
Micro Commercial Co

DIODE GEN PURP 200V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存27,714
200V
3A
1.2V @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 200V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SB560E-G
Comchip Technology

DIODE SCHOTTKY 60V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 500pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-201AD, Axial
库存12,852
60V
5A
700mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
500pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
BYM13-60-E3/96
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO213AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 60V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-213AB, MELF
库存55,326
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
80pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF
DO-213AB
-55°C ~ 150°C
hot SS16
Fairchild/ON Semiconductor

DIODE SCHOTTKY 60V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: DO-214AC, SMA
库存27,077,040
60V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 60V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 125°C
hot FJH1100
Fairchild/ON Semiconductor

DIODE GEN PURP 15V 150MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 15V
  • Current - Average Rectified (Io): 150mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.07V @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10pA @ 15V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-204AH, DO-35, Axial
库存5,152
15V
150mA (DC)
1.07V @ 100mA
Small Signal =< 200mA (Io), Any Speed
-
10pA @ 15V
2pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
SFF2004G
Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 20A ITO220AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 975 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 90pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Full Pack, Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存3,000
200 V
20A
975 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
10 µA @ 200 V
90pF @ 4V, 1MHz
Through Hole
TO-220-3 Full Pack, Isolated Tab
ITO-220AB
-55°C ~ 150°C
ER304_R2_00001
Panjit International Inc.

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 400 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
400 V
3A
1.25 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
1 µA @ 400 V
35pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
B05100W-TP
Micro Commercial Co

DIODE SCHOTTKY 100V 500MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存11,361
100 V
500mA
850 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 100 V
15pF @ 4V, 1MHz
Surface Mount
SOD-123
SOD-123
-55°C ~ 150°C
S1KBH
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,000
800 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
12pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
WNSC5D10650T6J
WeEn Semiconductors

DIODE SIL CARBIDE 650V 10A 5DFN

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 650 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 50 µA @ 650 V
  • Capacitance @ Vr, F: 323pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 4-VSFN Exposed Pad
  • Supplier Device Package: 5-DFN (8x8)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
Request a Quote
650 V
10A
1.7 V @ 10 A
No Recovery Time > 500mA (Io)
0 ns
50 µA @ 650 V
323pF @ 1V, 1MHz
Surface Mount
4-VSFN Exposed Pad
5-DFN (8x8)
-55°C ~ 175°C
HSU119-90TRF-E
Renesas Electronics Corporation

SCHOTTKY BARRIER DIODE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
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SB15100-TP
Micro Commercial Co

DIODE 15A DO201AD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
封装: -
Request a Quote
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Through Hole
DO-201AD, Axial
DO-201AD
-
MBR3H150SS_AY_00001
Panjit International Inc.

DIODE SCHOTTKY 150V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 nA @ 150 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存3,183
150 V
3A
850 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 nA @ 150 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
V30K150-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 3.5A FLATPAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 3.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350 µA @ 150 V
  • Capacitance @ Vr, F: 1660pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN
  • Supplier Device Package: FlatPAK (5x6)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存5,940
150 V
3.5A
1.4 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
-
350 µA @ 150 V
1660pF @ 4V, 1MHz
Surface Mount
8-PowerTDFN
FlatPAK (5x6)
-40°C ~ 150°C
1N4001GP-AP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
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50 V
1A
1.1 V @ 1 A
Standard Recovery >500ns, > 200mA (Io)
2 µs
5 µA @ 50 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-55°C ~ 175°C
1SS400ZTTE61
Rohm Semiconductor

DIODE GENERAL PURPOSE SMD

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
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