页 240 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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零件编号
制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
hot MURS340HE3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存20,400
400V
3A
1.25V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 400V
-
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-65°C ~ 175°C
RMPG06DHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 1A MPG06

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: MPG06, Axial
  • Supplier Device Package: MPG06
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: MPG06, Axial
库存6,480
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
6.6pF @ 4V, 1MHz
Through Hole
MPG06, Axial
MPG06
-55°C ~ 150°C
R9G22412CSOO
Powerex Inc.

DIODE MODULE 2.4KV 1200A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 2400V
  • Current - Average Rectified (Io): 1200A
  • Voltage - Forward (Vf) (Max) @ If: 2.3V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4µs
  • Current - Reverse Leakage @ Vr: 75mA @ 2400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
封装: DO-200AB, B-PUK
库存3,344
2400V
1200A
2.3V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
4µs
75mA @ 2400V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
MBRF1690 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 16A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 16A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2 Full Pack
库存7,984
90V
16A
850mV @ 16A
Fast Recovery =< 500ns, > 200mA (Io)
-
300µA @ 90V
-
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
NRVUD340T4G-VF01
ON Semiconductor

DIODE GEN PURP 400V 3A DPAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Supplier Device Package: DPAK-3
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-252-3, DPak (2 Leads + Tab), SC-63
库存5,440
400V
3A
1.15V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
-
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK-3
-55°C ~ 175°C
SBR3U60P5-7D
Diodes Incorporated

DIODE SBR 60V 3A PDI5

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 60µA @ 60V
  • Capacitance @ Vr, F: 110pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: PowerDI? 5
  • Supplier Device Package: PowerDI?5
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: PowerDI? 5
库存5,408
60V
3A
600mV @ 3A
Standard Recovery >500ns, > 200mA (Io)
-
60µA @ 60V
110pF @ 4V, 1MHz
Surface Mount
PowerDI? 5
PowerDI?5
-55°C ~ 175°C
hot S4PB-M3/87A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 4A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 4A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.5µs
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存54,000
100V
4A
1.1V @ 4A
Standard Recovery >500ns, > 200mA (Io)
2.5µs
10µA @ 100V
30pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
RGF1D-E3/5CA
Vishay Semiconductor Diodes Division

DIODE SW 1A 200V 150NS DO-214BA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214BA
库存7,520
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
8.5pF @ 4V, 1MHz
Surface Mount
DO-214BA
DO-214BA (GF1)
-65°C ~ 175°C
SD101BWS-HE3-18
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 150MW 50V SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 30mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 40V
  • Capacitance @ Vr, F: 2.1pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: SC-76, SOD-323
库存2,592
50V
30mA (DC)
950mV @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 40V
2.1pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
VS-MURB820TRLPBF
Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 8A D2PAK

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 5µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,048
200V
8A
975mV @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
5µA @ 200V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
hot UG12JT-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 12A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 12A
  • Voltage - Forward (Vf) (Max) @ If: 1.75V @ 12A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 30µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-220-2
库存4,880
600V
12A
1.75V @ 12A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
30µA @ 600V
-
Through Hole
TO-220-2
TO-220AC
150°C (Max)
hot STTH30R02DJF-TR
STMicroelectronics

DIODE GEN 200V 30A POWERFLAT

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.15V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerVDFN
  • Supplier Device Package: PowerFlat? (5x6)
  • Operating Temperature - Junction: 175°C (Max)
封装: 8-PowerVDFN
库存6,000
200V
30A
1.15V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
-
Surface Mount
8-PowerVDFN
PowerFlat? (5x6)
175°C (Max)
FSM14PL-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A SOD123FL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 250ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: SOD-123F
库存2,080
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
250ns
5µA @ 400V
15pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-65°C ~ 150°C
AS1FMHM3-H
Vishay General Semiconductor - Diodes Division

DIODE AVALANCHE 1KV 1.5A DO219AB

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 1000 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.3 µs
  • Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
  • Capacitance @ Vr, F: 8.8pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: DO-219AB (SMF)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存52,050
1000 V
1.5A
1.15 V @ 1.5 A
Standard Recovery >500ns, > 200mA (Io)
1.3 µs
5 µA @ 1000 V
8.8pF @ 4V, 1MHz
Surface Mount
DO-219AB
DO-219AB (SMF)
-55°C ~ 175°C
CTLSH4-200M364-TR13-PBFREE
Central Semiconductor Corp

DIODE SCHOTTKY 200V 4A TLM364

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 840 mV @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1 µA @ 200 V
  • Capacitance @ Vr, F: 140pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 3-SMD, Flat Lead
  • Supplier Device Package: TLM364
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,417
200 V
4A
840 mV @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1 µA @ 200 V
140pF @ 4V, 1MHz
Surface Mount
3-SMD, Flat Lead
TLM364
-55°C ~ 150°C
RKH0125AKF-P1
Renesas Electronics Corporation

DIODE FOR HIGH VOLTAGE SWITCHING

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
1N4938-TR
Microchip Technology

DIODE GEN PURP 175V 100MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 175 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 175 V
  • Capacitance @ Vr, F: 5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-204AH (DO-35)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
175 V
100mA
1 V @ 100 mA
Small Signal =< 200mA (Io), Any Speed
50 ns
100 nA @ 175 V
5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-204AH (DO-35)
-65°C ~ 175°C
S5DC
SMC Diode Solutions

DIODE GEN PURP 200V 5A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 5 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 200 V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC (DO-214AB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
200 V
5A
1.15 V @ 5 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 200 V
40pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
SMC (DO-214AB)
-65°C ~ 150°C
EGL41CHE3_A-I
Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 150V 1A DO213AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 150 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-213AB, MELF (Glass)
  • Supplier Device Package: DO-213AB
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
150 V
1A
1 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 150 V
20pF @ 4V, 1MHz
Surface Mount
DO-213AB, MELF (Glass)
DO-213AB
-65°C ~ 175°C
ERT3AAF_R1_00001
Panjit International Inc.

DIODE GEN PURP 50V 3A SMBF

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 50 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
50 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
25 ns
1 µA @ 50 V
50pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
MURS3GBFL-TP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AA, SMB Flat Leads
  • Supplier Device Package: SMBF
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
400 V
3A
1.25 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 400 V
55pF @ 4V, 1MHz
Surface Mount
DO-221AA, SMB Flat Leads
SMBF
-55°C ~ 150°C
BX35_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 50V 3A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
Request a Quote
50 V
3A
740 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 50 V
-
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-65°C ~ 175°C
FR154GP-TP
Micro Commercial Co

DIODE GEN PURP 400V 1.5A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
400 V
1.5A
1.3 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
150 ns
5 µA @ 400 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
NSR05T304MX2T5G
onsemi

DIODE SCHOTTKY 30V 500MA 2X2DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30 V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 435 mV @ 500 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 15 ns
  • Current - Reverse Leakage @ Vr: 75 µA @ 30 V
  • Capacitance @ Vr, F: 30pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 2-XDFN
  • Supplier Device Package: 2-X2DFN (1x0.6)
  • Operating Temperature - Junction: -55°C ~ 85°C
封装: -
Request a Quote
30 V
500mA
435 mV @ 500 mA
Fast Recovery =< 500ns, > 200mA (Io)
15 ns
75 µA @ 30 V
30pF @ 1V, 1MHz
Surface Mount
2-XDFN
2-X2DFN (1x0.6)
-55°C ~ 85°C
ES3AB-HF
Comchip Technology

DIODE GP 50V 3A SMB/DO-214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 50 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB/DO-214AA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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50 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
35 ns
5 µA @ 50 V
45pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
SMB/DO-214AA
-55°C ~ 150°C
SDUR3060
SMC Diode Solutions

600V, 30A, TO-220AC, ULTRA FAST

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 600 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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600 V
30A
1.8 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
250 µA @ 600 V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
CDBC240LR-HF
Comchip Technology

DIODE SCHOTTKY 40V 2A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
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40 V
2A
450 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-50°C ~ 150°C
SD1206S060S1R0
KYOCERA AVX

SCHOTTKY DIODES

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 1206 (3216 Metric)
  • Supplier Device Package: 1206
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: -
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60 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 60 V
-
Surface Mount
1206 (3216 Metric)
1206
-55°C ~ 125°C
P2000A
Diotec Semiconductor

IC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5 µs
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: P600, Axial
  • Supplier Device Package: P-600
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: -
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50 V
20A
1.1 V @ 20 A
Standard Recovery >500ns, > 200mA (Io)
1.5 µs
10 µA @ 50 V
-
Through Hole
P600, Axial
P-600
-50°C ~ 150°C
V12PM63-M3-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 60V 4.6A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 4.6A
  • Voltage - Forward (Vf) (Max) @ If: 650 mV @ 12 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 30 µA @ 60 V
  • Capacitance @ Vr, F: 2400pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存13,500
60 V
4.6A
650 mV @ 12 A
Fast Recovery =< 500ns, > 200mA (Io)
-
30 µA @ 60 V
2400pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 175°C