页 231 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
SIDC26D60C6	Infineon Technologies	DIODE GEN PURP 600V 100A WAFER Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 100A (DC) Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 27µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: Die Supplier Device Package: Sawn on foil Operating Temperature - Junction: -40°C ~ 175°C	封装: Die	库存6,288	600V	100A (DC)	1.9V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	27µA @ 600V	-	Surface Mount	Die	Sawn on foil	-40°C ~ 175°C
MBRF40250T	ON Semiconductor	DIODE SCHOTTKY 250V 40A TO220FP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 250V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 30µA @ 250V Capacitance @ Vr, F: 500pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-3 Full Pack	库存6,112	250V	40A	970mV @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	30µA @ 250V	500pF @ 5V, 1MHz	Through Hole	TO-220-3 Full Pack	TO-220FP	-65°C ~ 150°C
SS16-E3/11T	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 60V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AC, SMA	库存4,768	60V	1A	750mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 60V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-65°C ~ 150°C
1N4933RL	ON Semiconductor	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存2,800	50V	1A	1.2V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	5µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
JAN1N6630US	Microsemi Corporation	DIODE GEN PURP 900V 1.4A E-MELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 900V Current - Average Rectified (Io): 1.4A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 2µA @ 900V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SQ-MELF, E Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 150°C	封装: SQ-MELF, E	库存6,880	900V	1.4A	1.4V @ 1.4A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	2µA @ 900V	-	Surface Mount	SQ-MELF, E	D-5B	-65°C ~ 150°C
VS-41HF100	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 40A DO203AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 9mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -65°C ~ 190°C	封装: DO-203AB, DO-5, Stud	库存6,928	1000V	40A	1.3V @ 125A	Standard Recovery >500ns, > 200mA (Io)	-	9mA @ 1000V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-65°C ~ 190°C
EU 2AV	Sanken	DIODE GEN PURP 600V 1A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存2,064	600V	1A	1.4V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	10µA @ 600V	-	Through Hole	Axial	-	-40°C ~ 150°C
VS-10BQ040-M3/5BT	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 40V Capacitance @ Vr, F: 115pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存216,000	40V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 40V	115pF @ 5V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-55°C ~ 150°C
RMPG06G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A MPG06 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: MPG06, Axial Supplier Device Package: MPG06 Operating Temperature - Junction: -55°C ~ 150°C	封装: MPG06, Axial	库存5,456	400V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 400V	6.6pF @ 4V, 1MHz	Through Hole	MPG06, Axial	MPG06	-55°C ~ 150°C
UF4001TA	SMC Diode Solutions	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 50V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,968	50V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 50V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
VS-C4PU3006LHN3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 2X15A TO-247 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-247-3	库存5,632	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	15µA @ 600V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 175°C
BYG10M-E3/TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 1KV 1.5A Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 4µs Current - Reverse Leakage @ Vr: 1µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存1,404,036	1000V	1.5A	1.15V @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	4µs	1µA @ 1000V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
VS-ETX1506-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20ns Current - Reverse Leakage @ Vr: 36µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-220-2	库存6,032	600V	15A	3.4V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	20ns	36µA @ 600V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
VS-150K30A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 300V 150A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 300V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存4,880	300V	150A	1.33V @ 471A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 300V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
IDM08G120C5XTMA1	Infineon Technologies	DIODE SCHOTTKY 1200V 8A TO252-2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 8A (DC) Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 40µA @ 1200V Capacitance @ Vr, F: 365pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: PG-TO252-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存3,648	1200V	8A (DC)	1.95V @ 8A	No Recovery Time > 500mA (Io)	0ns	40µA @ 1200V	365pF @ 1V, 1MHz	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-2	-55°C ~ 175°C
CDBA140L-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 130pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -50°C ~ 100°C	封装: DO-214AC, SMA	库存3,104	40V	1A	400mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	130pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-50°C ~ 100°C
CDBA340-G	Comchip Technology	DIODE SCHOTTKY 40V 3A DO214AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存23,772	40V	3A	500mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
BAS16GWJ	Nexperia USA Inc.	BAS16GW/SOD123/SOD2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	封装: SOD-123	库存85,914	100V	-	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	-	1.5pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-
1N459ATR	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 500MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25nA @ 175V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max)	封装: DO-204AH, DO-35, Axial	库存256,716	200V	500mA	1V @ 100mA	Standard Recovery >500ns, > 200mA (Io)	-	25nA @ 175V	6pF @ 0V, 1MHz	Through Hole	DO-204AH, DO-35, Axial	DO-35	175°C (Max)
PMEG6045ETP-QX	Nexperia USA Inc.	DIODE SCHOT 60V 4.5A SOD128/CFP5 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 4.5A Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 400 µA @ 60 V Capacitance @ Vr, F: 575pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: SOD-128/CFP5 Operating Temperature - Junction: 175°C	封装: -	库存10,089	60 V	4.5A	530 mV @ 4.5 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	400 µA @ 60 V	575pF @ 1V, 1MHz	Surface Mount	SOD-128	SOD-128/CFP5	175°C
SDUR60Q60WT	SMC Diode Solutions	DIODE GEN PURP 600V 30A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 40 ns Current - Reverse Leakage @ Vr: 10 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存270	600 V	30A	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	40 ns	10 µA @ 600 V	-	Through Hole	TO-247-3	TO-247AD	-55°C ~ 150°C
PMEG4030ETR-QX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 3A SOD123W Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 250pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123W Supplier Device Package: SOD-123W Operating Temperature - Junction: 175°C	封装: -	库存17,670	40 V	3A	540 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	250pF @ 1V, 1MHz	Surface Mount	SOD-123W	SOD-123W	175°C
VSSAF5L63HM3-H	Vishay General Semiconductor - Diodes Division	5A, 60V SLIMSMA TRENCH SKY RECT. Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2.6A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 80 µA @ 60 V Capacitance @ Vr, F: 780pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: DO-221AC (SlimSMA) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	库存19,950	60 V	2.6A	600 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	80 µA @ 60 V	780pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	DO-221AC (SlimSMA)	-40°C ~ 150°C
UTR31	Microchip Technology	DIODE GEN PURP 300V 1A A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 3 µA @ 300 V Capacitance @ Vr, F: 70pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: A, Axial Supplier Device Package: A, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	300 V	1A	1.1 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	3 µA @ 300 V	70pF @ 0V, 1MHz	Through Hole	A, Axial	A, Axial	-65°C ~ 175°C
NSB8DTHE3_B-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 55pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	8A	1.1 V @ 8 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 200 V	55pF @ 4V, 1MHz	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-55°C ~ 150°C
STPST2H100ZFY	STMicroelectronics	AUTOMOTIVE 100 V, 2 A POWER SCHO Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -40°C ~ 175°C	封装: -	库存26,598	100 V	2A	805 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	2.7 µA @ 100 V	-	Surface Mount	SOD-123F	SOD-123F	-40°C ~ 175°C
VS-1EAH02-M3-I	Vishay General Semiconductor - Diodes Division	1A, 200V, FRED HYPERFAST RECTIFI Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 23 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Surface Mount, Wettable Flank Package / Case: 2-VDFN Supplier Device Package: DFN3820A Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存41,970	200 V	1A	970 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	23 ns	1 µA @ 200 V	-	Surface Mount, Wettable Flank	2-VDFN	DFN3820A	-55°C ~ 175°C
S20100	Microchip Technology	DIODE GEN PURP 1KV 16A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10 µA @ 1000 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA (DO-4) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	1000 V	16A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 1000 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-203AA (DO-4)	-65°C ~ 200°C
NXPSC106506Q	WeEn Semiconductors	DIODE SIL CARB 650V 10A TO220AC Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 250 µA @ 650 V Capacitance @ Vr, F: 300pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: -	库存9,000	650 V	10A	1.7 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	250 µA @ 650 V	300pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220AC	175°C (Max)
R1200-TP	Micro Commercial Co	DIODE GEN PURP 1.2KV 500MA DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 1200 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	1200 V	500mA	2 V @ 500 mA	Standard Recovery >500ns, > 200mA (Io)	-	5 µA @ 1200 V	30pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C

SIDC26D60C6

Infineon Technologies

DIODE GEN PURP 600V 100A WAFER

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 100A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.9V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 27µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: Die
Supplier Device Package: Sawn on foil
Operating Temperature - Junction: -40°C ~ 175°C

封装: Die

库存6,288

600V

100A (DC)

1.9V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

27µA @ 600V

-

Surface Mount

Die

Sawn on foil

-40°C ~ 175°C

MBRF40250T

ON Semiconductor

DIODE SCHOTTKY 250V 40A TO220FP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 250V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 970mV @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 30µA @ 250V
Capacitance @ Vr, F: 500pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-3 Full Pack

库存6,112

250V

40A

970mV @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

30µA @ 250V

500pF @ 5V, 1MHz

Through Hole

TO-220-3 Full Pack

TO-220FP

-65°C ~ 150°C

SS16-E3/11T

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AC, SMA

库存4,768

60V

1A

750mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 60V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-65°C ~ 150°C

1N4933RL

ON Semiconductor

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存2,800

50V

1A

1.2V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

5µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

JAN1N6630US

Microsemi Corporation

DIODE GEN PURP 900V 1.4A E-MELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 900V
Current - Average Rectified (Io): 1.4A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1.4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 2µA @ 900V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 150°C

封装: SQ-MELF, E

库存6,880

900V

1.4A

1.4V @ 1.4A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

2µA @ 900V

-

Surface Mount

SQ-MELF, E

D-5B

-65°C ~ 150°C

VS-41HF100

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 40A DO203AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 9mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -65°C ~ 190°C

封装: DO-203AB, DO-5, Stud

库存6,928

1000V

40A

1.3V @ 125A

Standard Recovery >500ns, > 200mA (Io)

-

9mA @ 1000V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-65°C ~ 190°C

EU 2AV

Sanken

DIODE GEN PURP 600V 1A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存2,064

600V

1A

1.4V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

10µA @ 600V

-

Through Hole

Axial

-

-40°C ~ 150°C

VS-10BQ040-M3/5BT

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 40V
Capacitance @ Vr, F: 115pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存216,000

40V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 40V

115pF @ 5V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-55°C ~ 150°C

RMPG06G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A MPG06

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 6.6pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: MPG06, Axial
Supplier Device Package: MPG06
Operating Temperature - Junction: -55°C ~ 150°C

封装: MPG06, Axial

库存5,456

400V

1A

1.3V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

150ns

5µA @ 400V

6.6pF @ 4V, 1MHz

Through Hole

MPG06, Axial

MPG06

-55°C ~ 150°C

UF4001TA

SMC Diode Solutions

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 50V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,968

50V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 50V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

VS-C4PU3006LHN3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2X15A TO-247

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-247-3

库存5,632

600V

15A

1.55V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

15µA @ 600V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 175°C

BYG10M-E3/TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 1KV 1.5A

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4µs
Current - Reverse Leakage @ Vr: 1µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存1,404,036

1000V

1.5A

1.15V @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

4µs

1µA @ 1000V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

VS-ETX1506-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 3.4V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20ns
Current - Reverse Leakage @ Vr: 36µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-220-2

库存6,032

600V

15A

3.4V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

20ns

36µA @ 600V

-

Through Hole

TO-220-2

-65°C ~ 175°C

VS-150K30A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 300V 150A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.33V @ 471A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存4,880

300V

150A

1.33V @ 471A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 300V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 200°C

IDM08G120C5XTMA1

Infineon Technologies

DIODE SCHOTTKY 1200V 8A TO252-2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 8A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.95V @ 8A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 40µA @ 1200V
Capacitance @ Vr, F: 365pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: PG-TO252-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存3,648

1200V

8A (DC)

1.95V @ 8A

No Recovery Time > 500mA (Io)

0ns

40µA @ 1200V

365pF @ 1V, 1MHz

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

PG-TO252-2

-55°C ~ 175°C

CDBA140L-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 130pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -50°C ~ 100°C

封装: DO-214AC, SMA

库存3,104

40V

1A

400mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

130pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-50°C ~ 100°C

CDBA340-G

Comchip Technology

DIODE SCHOTTKY 40V 3A DO214AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存23,772

40V

3A

500mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

BAS16GWJ

Nexperia USA Inc.

BAS16GW/SOD123/SOD2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

封装: SOD-123

库存85,914

100V

-

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

-

1.5pF @ 0V, 1MHz

Surface Mount

SOD-123

-

1N459ATR

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 500MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25nA @ 175V
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)

封装: DO-204AH, DO-35, Axial

库存256,716

200V

500mA

1V @ 100mA

Standard Recovery >500ns, > 200mA (Io)

-

25nA @ 175V

6pF @ 0V, 1MHz

Through Hole

DO-204AH, DO-35, Axial

DO-35

175°C (Max)

PMEG6045ETP-QX

Nexperia USA Inc.

DIODE SCHOT 60V 4.5A SOD128/CFP5

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 4.5A
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 4.5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Capacitance @ Vr, F: 575pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C

封装: -

库存10,089

60 V

4.5A

530 mV @ 4.5 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

400 µA @ 60 V

575pF @ 1V, 1MHz

Surface Mount

SOD-128

SOD-128/CFP5

175°C

SDUR60Q60WT

SMC Diode Solutions

DIODE GEN PURP 600V 30A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 40 ns
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存270

600 V

30A

1.8 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

40 ns

10 µA @ 600 V

-

Through Hole

TO-247-3

TO-247AD

-55°C ~ 150°C

PMEG4030ETR-QX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 3A SOD123W

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 540 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 250pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123W
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C

封装: -

库存17,670

40 V

3A

540 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

250pF @ 1V, 1MHz

Surface Mount

SOD-123W

175°C

VSSAF5L63HM3-H

Vishay General Semiconductor - Diodes Division

5A, 60V SLIMSMA TRENCH SKY RECT.

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2.6A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 80 µA @ 60 V
Capacitance @ Vr, F: 780pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: DO-221AC (SlimSMA)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

库存19,950

60 V

2.6A

600 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

80 µA @ 60 V

780pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

DO-221AC (SlimSMA)

-40°C ~ 150°C

UTR31

Microchip Technology

DIODE GEN PURP 300V 1A A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 3 µA @ 300 V
Capacitance @ Vr, F: 70pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: A, Axial
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

300 V

1A

1.1 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

3 µA @ 300 V

70pF @ 0V, 1MHz

Through Hole

A, Axial

-65°C ~ 175°C

NSB8DTHE3_B-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

8A

1.1 V @ 8 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 200 V

55pF @ 4V, 1MHz

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-55°C ~ 150°C

STPST2H100ZFY

STMicroelectronics

AUTOMOTIVE 100 V, 2 A POWER SCHO

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 805 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2.7 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

库存26,598

100 V

2A

805 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

2.7 µA @ 100 V

-

Surface Mount

SOD-123F

-40°C ~ 175°C

VS-1EAH02-M3-I

Vishay General Semiconductor - Diodes Division

1A, 200V, FRED HYPERFAST RECTIFI

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 970 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 23 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 2-VDFN
Supplier Device Package: DFN3820A
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存41,970

200 V

1A

970 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

23 ns

1 µA @ 200 V

-

Surface Mount, Wettable Flank

2-VDFN

DFN3820A

-55°C ~ 175°C

S20100

Microchip Technology

DIODE GEN PURP 1KV 16A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA (DO-4)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

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1000 V

16A

1.3 V @ 30 A

Standard Recovery >500ns, > 200mA (Io)

-

10 µA @ 1000 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-203AA (DO-4)

-65°C ~ 200°C

NXPSC106506Q

WeEn Semiconductors

DIODE SIL CARB 650V 10A TO220AC

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 250 µA @ 650 V
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: -

库存9,000

650 V

10A

1.7 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

250 µA @ 650 V

300pF @ 1V, 1MHz

Through Hole

TO-220-2

TO-220AC

175°C (Max)

R1200-TP

Micro Commercial Co

DIODE GEN PURP 1.2KV 500MA DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 2 V @ 500 mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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1200 V

500mA

2 V @ 500 mA

Standard Recovery >500ns, > 200mA (Io)

-

5 µA @ 1200 V

30pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C