页 1675 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRB16H35-E3/45	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY TO-263AB Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,000	-	-	-	-	-	-	-	-	-	-	-
1N4449	Microsemi Corporation	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 25nA @ 20V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AH, DO-35, Axial	库存3,504	75V	200mA	1V @ 30mA	Small Signal =< 200mA (Io), Any Speed	4ns	25nA @ 20V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 150°C
SB10-05A2-AT1	ON Semiconductor	DIODE SCHOTTKY 50V 1A DO41 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1mA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: 125°C (Max)	封装: DO-204AL, DO-41, Axial	库存2,272	50V	1A	580mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1mA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	125°C (Max)
SB150A-E3/73	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 50V 1A DO204AL Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存3,504	50V	1A	650mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 150°C
1N5401	ON Semiconductor	DIODE GEN PURP 100V 3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: Axial Operating Temperature - Junction: -65°C ~ 170°C	封装: DO-201AA, DO-27, Axial	库存1,283,544	100V	3A	1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 100V	-	Through Hole	DO-201AA, DO-27, Axial	Axial	-65°C ~ 170°C
STTA512B	STMicroelectronics	DIODE GEN PURP 1.2KV 5A DPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 95ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Supplier Device Package: D-Pak Operating Temperature - Junction: 150°C (Max)	封装: TO-252-3, DPak (2 Leads + Tab), SC-63	库存13,428	1200V	5A	2.2V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	95ns	100µA @ 1200V	-	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	D-Pak	150°C (Max)
S150JR	GeneSiC Semiconductor	DIODE GEN REV 600V 150A DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存3,200	600V	150A	1.2V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-65°C ~ 200°C
MBR8035R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 35V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存6,224	35V	80A	750mV @ 80A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 35V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
VS-HFA15TB60STRLP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 15A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存5,984	600V	15A (DC)	1.7V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	60ns	10µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
MBR60100PTE3/TU	Microsemi Corporation	DIODE SCHOTTKY 60A 100V TO-247AD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存7,184	-	-	-	-	-	-	-	-	-	-	-
SDUR1530	SMC Diode Solutions	DIODE GEN PURP 300V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2	库存3,968	300V	15A	1.26V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	10µA @ 300V	-	Through Hole	TO-220-2	TO-220AC	-55°C ~ 175°C
US1M-M3/61T	Vishay Semiconductor Diodes Division	DIODE 1A 1000V 75NS DO-214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存324,000	1000V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	10µA @ 1000V	10pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
CDBV120-G	Comchip Technology	DIODE SCHOTTKY 20V 1A SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 20V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -	封装: SC-76, SOD-323	库存3,504	20V	1A	450mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 20V	120pF @ 4V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-
SB340TR	SMC Diode Solutions	DIODE SCHOTTKY 40V DO-201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1mA @ 40V Capacitance @ Vr, F: 200pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-201AD, Axial	库存4,448	40V	3A	520mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	1mA @ 40V	200pF @ 5V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SE10FJ-M3/I	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 1A DO219AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 780ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: DO-219AB (SMF) Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-219AB	库存5,648	600V	1A	1.05V @ 1A	Standard Recovery >500ns, > 200mA (Io)	780ns	5µA @ 600V	7.5pF @ 4V, 1MHz	Surface Mount	DO-219AB	DO-219AB (SMF)	-55°C ~ 175°C
MUR115SH	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 150 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存18,000	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 150 V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 175°C
SBRFP10U45D1-13	Diodes Incorporated	DIODE GEN PURP 45V 10A TO252 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 45 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 55 ns Current - Reverse Leakage @ Vr: 200 µA @ 45 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	45 V	10A	500 mV @ 10 A	Fast Recovery =< 500ns, > 200mA (Io)	55 ns	200 µA @ 45 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 150°C
1N6941UTK3AS	Microchip Technology	DIODE SCHOTTKY 30V 150A THINKEY3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 150A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 mA @ 30 V Capacitance @ Vr, F: 7500pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: ThinKey™3 Supplier Device Package: ThinKey™3 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	30 V	150A	500 mV @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 30 V	7500pF @ 5V, 1MHz	Surface Mount	ThinKey™3	ThinKey™3	-65°C ~ 150°C
GS1BHE3-LTP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1 V @ 1 A	Standard Recovery >500ns, > 200mA (Io)	2 µs	5 µA @ 1000 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
MUR420SH	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 4A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 65pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存8,985	200 V	4A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	5 µA @ 200 V	65pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
BAS21-QVL	Nexperia USA Inc.	DIODE SCHOTT 200V 200MA TO236AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 100 nA @ 200 V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: TO-236AB Operating Temperature - Junction: 150°C	封装: -	Request a Quote	200 V	200mA	1.25 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	50 ns	100 nA @ 200 V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	TO-236AB	150°C
RHRP3060-F102	onsemi	DIODE GEN PURP 600V 30A TO220-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45 ns Current - Reverse Leakage @ Vr: 250 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	600 V	30A	2.1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	45 ns	250 µA @ 600 V	-	Through Hole	TO-220-2	TO-220-2	-65°C ~ 175°C
GP3D030A120B	SemiQ	DIODE SIL CARB 1.2KV 30A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1200 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 60 µA @ 1200 V Capacitance @ Vr, F: 1762pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	1200 V	30A	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	60 µA @ 1200 V	1762pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SF41GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 4A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	4A	1 V @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
RS2JWF-HF	Comchip Technology	DIODE GEN PURP 600V 2A SOD123F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: SOD-123F Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	2A	1.3 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	250 ns	5 µA @ 600 V	30pF @ 4V, 1MHz	Surface Mount	SOD-123F	SOD-123F	-55°C ~ 150°C
SB240L-AP	Micro Commercial Co	Interface Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 40 V Capacitance @ Vr, F: 180pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	2A	450 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 40 V	180pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 125°C
IV1D06006O2	Inventchip	DIODE SIL CARB 650V 17.4A TO220 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 17.4A Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 10 µA @ 650 V Capacitance @ Vr, F: 212pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存396	650 V	17.4A	1.65 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	212pF @ 1V, 1MHz	Through Hole	TO-220-2	TO-220-2	-55°C ~ 175°C
SRAF1640	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 40V 16A ITO220AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	40 V	16A	550 mV @ 16 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 40 V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 125°C
SBRS8140NT3G	onsemi	DIODE SCHOTTKY 40V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 125°C	封装: -	库存5,991	40 V	1A	600 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 40 V	-	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 125°C
CMR3U-01-TR13-PBFREE	Central Semiconductor Corp	DIODE GEN PURP 100V 3A SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC Operating Temperature - Junction: -65°C ~ 175°C	封装: -	库存7,380	100 V	3A	1 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 100 V	-	Surface Mount	DO-214AB, SMC	SMC	-65°C ~ 175°C

MBRB16H35-E3/45

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY TO-263AB

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,000

-

1N4449

Microsemi Corporation

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 30mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 25nA @ 20V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AH, DO-35, Axial

库存3,504

75V

200mA

1V @ 30mA

Small Signal =< 200mA (Io), Any Speed

4ns

25nA @ 20V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 150°C

SB10-05A2-AT1

ON Semiconductor

DIODE SCHOTTKY 50V 1A DO41

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 580mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: 125°C (Max)

封装: DO-204AL, DO-41, Axial

库存2,272

50V

1A

580mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1mA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

125°C (Max)

SB150A-E3/73

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 50V 1A DO204AL

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 650mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存3,504

50V

1A

650mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 150°C

1N5401

ON Semiconductor

DIODE GEN PURP 100V 3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -65°C ~ 170°C

封装: DO-201AA, DO-27, Axial

库存1,283,544

100V

3A

1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 100V

-

Through Hole

DO-201AA, DO-27, Axial

Axial

-65°C ~ 170°C

STTA512B

STMicroelectronics

DIODE GEN PURP 1.2KV 5A DPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 95ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package: D-Pak
Operating Temperature - Junction: 150°C (Max)

封装: TO-252-3, DPak (2 Leads + Tab), SC-63

库存13,428

1200V

5A

2.2V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

95ns

100µA @ 1200V

-

Surface Mount

TO-252-3, DPak (2 Leads + Tab), SC-63

D-Pak

150°C (Max)

S150JR

GeneSiC Semiconductor

DIODE GEN REV 600V 150A DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存3,200

600V

150A

1.2V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-65°C ~ 200°C

MBR8035R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 35V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 750mV @ 80A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存6,224

35V

80A

750mV @ 80A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 35V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

VS-HFA15TB60STRLP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 15A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60ns
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存5,984

600V

15A (DC)

1.7V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

60ns

10µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

MBR60100PTE3/TU

Microsemi Corporation

DIODE SCHOTTKY 60A 100V TO-247AD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存7,184

-

SDUR1530

SMC Diode Solutions

DIODE GEN PURP 300V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.26V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2

库存3,968

300V

15A

1.26V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

10µA @ 300V

-

Through Hole

TO-220-2

TO-220AC

-55°C ~ 175°C

US1M-M3/61T

Vishay Semiconductor Diodes Division

DIODE 1A 1000V 75NS DO-214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存324,000

1000V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

10µA @ 1000V

10pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

CDBV120-G

Comchip Technology

DIODE SCHOTTKY 20V 1A SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 20V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -

封装: SC-76, SOD-323

库存3,504

20V

1A

450mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 20V

120pF @ 4V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-

SB340TR

SMC Diode Solutions

DIODE SCHOTTKY 40V DO-201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 520mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1mA @ 40V
Capacitance @ Vr, F: 200pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-201AD, Axial

库存4,448

40V

3A

520mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

1mA @ 40V

200pF @ 5V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SE10FJ-M3/I

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 1A DO219AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.05V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 780ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 7.5pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: DO-219AB (SMF)
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-219AB

库存5,648

600V

1A

1.05V @ 1A

Standard Recovery >500ns, > 200mA (Io)

780ns

5µA @ 600V

7.5pF @ 4V, 1MHz

Surface Mount

DO-219AB

DO-219AB (SMF)

-55°C ~ 175°C

MUR115SH

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 1A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 150 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存18,000

150 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 150 V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 175°C

SBRFP10U45D1-13

Diodes Incorporated

DIODE GEN PURP 45V 10A TO252

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 45 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 10 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Current - Reverse Leakage @ Vr: 200 µA @ 45 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

45 V

10A

500 mV @ 10 A

Fast Recovery =< 500ns, > 200mA (Io)

55 ns

200 µA @ 45 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 150°C

1N6941UTK3AS

Microchip Technology

DIODE SCHOTTKY 30V 150A THINKEY3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 150A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 mA @ 30 V
Capacitance @ Vr, F: 7500pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: ThinKey™3
Supplier Device Package: ThinKey™3
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

30 V

150A

500 mV @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

-

5 mA @ 30 V

7500pF @ 5V, 1MHz

Surface Mount

ThinKey™3

-65°C ~ 150°C

GS1BHE3-LTP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1 V @ 1 A

Standard Recovery >500ns, > 200mA (Io)

2 µs

5 µA @ 1000 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

MUR420SH

Taiwan Semiconductor Corporation

DIODE GEN PURP 200V 4A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 65pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存8,985

200 V

4A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

5 µA @ 200 V

65pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

BAS21-QVL

Nexperia USA Inc.

DIODE SCHOTT 200V 200MA TO236AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: TO-236AB
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

200 V

200mA

1.25 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

50 ns

100 nA @ 200 V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

TO-236AB

150°C

RHRP3060-F102

onsemi

DIODE GEN PURP 600V 30A TO220-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

600 V

30A

2.1 V @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

45 ns

250 µA @ 600 V

-

Through Hole

TO-220-2

-65°C ~ 175°C

GP3D030A120B

SemiQ

DIODE SIL CARB 1.2KV 30A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 30 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 60 µA @ 1200 V
Capacitance @ Vr, F: 1762pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

1200 V

30A

1.7 V @ 30 A

No Recovery Time > 500mA (Io)

0 ns

60 µA @ 1200 V

1762pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

SF41GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 50V 4A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

4A

1 V @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

RS2JWF-HF

Comchip Technology

DIODE GEN PURP 600V 2A SOD123F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123F
Supplier Device Package: SOD-123F
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

2A

1.3 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

250 ns

5 µA @ 600 V

30pF @ 4V, 1MHz

Surface Mount

SOD-123F

-55°C ~ 150°C

SB240L-AP

Micro Commercial Co

Interface

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

2A

450 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 40 V

180pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 125°C

IV1D06006O2

Inventchip

DIODE SIL CARB 650V 17.4A TO220

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 17.4A
Voltage - Forward (Vf) (Max) @ If: 1.65 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 10 µA @ 650 V
Capacitance @ Vr, F: 212pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存396

650 V

17.4A

1.65 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

10 µA @ 650 V

212pF @ 1V, 1MHz

Through Hole

TO-220-2

-55°C ~ 175°C

SRAF1640

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 40V 16A ITO220AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 16 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

40 V

16A

550 mV @ 16 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 40 V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 125°C

SBRS8140NT3G

onsemi

DIODE SCHOTTKY 40V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 125°C

封装: -

库存5,991

40 V

1A

600 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 40 V

-

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 125°C

CMR3U-01-TR13-PBFREE

Central Semiconductor Corp

DIODE GEN PURP 100V 3A SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

库存7,380

100 V

3A

1 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 100 V

-

Surface Mount

DO-214AB, SMC

SMC

-65°C ~ 175°C