页 1648 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RS3MB-13	Diodes Incorporated	DIODE GEN PURP 1KV 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存6,944	1000V	3A	1.3V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 1000V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
1N4001RL	ON Semiconductor	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存5,040	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 50V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
VS-HFA16TB120SPBF	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1.2KV 16A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 16A (DC) Voltage - Forward (Vf) (Max) @ If: 3V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 135ns Current - Reverse Leakage @ Vr: 20µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,448	1200V	16A (DC)	3V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	135ns	20µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 150°C
SRAF5100 C0G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 5A, 1 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: ITO-220AC Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-220-2 Full Pack	库存3,280	100V	5A	850mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	TO-220-2 Full Pack	ITO-220AC	-55°C ~ 150°C
FESB8CTHE3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 150V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,496	150V	8A	950mV @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 150V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 150°C
FES16HT-E3/45	Vishay Semiconductor Diodes Division	DIODE GEN PURP 500V 16A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 500V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 500V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2	库存7,184	500V	16A	1.5V @ 16A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 500V	-	Through Hole	TO-220-2	TO-220AC	-65°C ~ 150°C
U2B-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 2A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 27ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存6,464	100V	2A	900mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	27ns	10µA @ 100V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
CDBMHT140-HF	Comchip Technology	DIODE SCHOTTKY 40V 1A SOD123T Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A (DC) Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 40V Capacitance @ Vr, F: 120pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123T Supplier Device Package: SOD-123HT Operating Temperature - Junction: -55°C ~ 125°C	封装: SOD-123T	库存4,464	40V	1A (DC)	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 40V	120pF @ 4V, 1MHz	Surface Mount	SOD-123T	SOD-123HT	-55°C ~ 125°C
3A100 R0G	TSC America Inc.	DIODE, 3A, 1000V, DO-15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 27pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存2,048	-	3A	1.1V @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	27pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N4004-E3/53	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -50°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存5,440	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-50°C ~ 150°C
ISL9R18120S3ST	Fairchild/ON Semiconductor	DIODE GEN PURP 1.2KV 18A TO263-2 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1200V Current - Average Rectified (Io): 18A Voltage - Forward (Vf) (Max) @ If: 3.3V @ 18A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 100µA @ 1200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存12,624	1200V	18A	3.3V @ 18A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	100µA @ 1200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-55°C ~ 175°C
VS-15ETH06SPBF	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 15A 600V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 29ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存19,668	600V	15A	2.2V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	29ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
FFPF08S60SNTU	Fairchild/ON Semiconductor	DIODE GEN PURP 600V 8A TO220F Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 100µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Supplier Device Package: TO-220F-2L Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-220-2 Full Pack	库存9,816	600V	8A	3.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	100µA @ 600V	-	Through Hole	TO-220-2 Full Pack	TO-220F-2L	-65°C ~ 150°C
SBYV27-200-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 200V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 15ns Current - Reverse Leakage @ Vr: 5µA @ 200V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存4,176	200V	2A	1.07V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	15ns	5µA @ 200V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
STTH15L06D	STMicroelectronics	DIODE GEN PURP 600V 15A TO220AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 15A Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 85ns Current - Reverse Leakage @ Vr: 15µA @ 600V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max)	封装: TO-220-2	库存30,948	600V	15A	1.55V @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	85ns	15µA @ 600V	-	Through Hole	TO-220-2	TO-220AC	175°C (Max)
STTH1R02QRL	STMicroelectronics	DIODE GEN PURP 200V 1.5A DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 3µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: 175°C (Max)	封装: DO-204AC, DO-15, Axial	库存43,152	200V	1.5A	1V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	3µA @ 200V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	175°C (Max)
1N2131	Solid State Inc.	DIODE GEN PURP 200V 70A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 25 µA @ 200 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	200 V	70A	1.25 V @ 200 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 200 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 200°C
GIB1401HE3_A-P	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 50V 8A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	8A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 50 V	-	Surface Mount	TO-263-3, D2PAK (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 150°C
GP10-4004-E3-54	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -	封装: -	Request a Quote	400 V	1A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-
PUAD4D	Taiwan Semiconductor Corporation	25NS, 4A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 77pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: ThinDPAK Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存13,485	200 V	4A	920 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	2 µA @ 200 V	77pF @ 4V, 1MHz	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	ThinDPAK	-55°C ~ 175°C
60HFR10	Solid State Inc.	DIODE GEN PURP 100V 60A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 60A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	100 V	60A	1.3 V @ 60 A	Standard Recovery >500ns, > 200mA (Io)	-	200 µA @ 100 V	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
BAT165A-QX	Nexperia USA Inc.	DIODE SCHOTTKY 40V 500MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 750mA Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 8 µA @ 40 V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: 150°C	封装: -	Request a Quote	40 V	750mA	740 mV @ 750 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	8 µA @ 40 V	12pF @ 10V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	150°C
BYM07-150HE3_A-H	Vishay General Semiconductor - Diodes Division	DIODE GP 150V 500MA DO213AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 7pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AA (Glass) Supplier Device Package: DO-213AA (GL34) Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	150 V	500mA	1.25 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 150 V	7pF @ 4V, 1MHz	Surface Mount	DO-213AA (Glass)	DO-213AA (GL34)	-65°C ~ 175°C
SF35GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 3A DO201AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 300 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存7,500	300 V	3A	1.3 V @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 300 V	60pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
R38120	Microchip Technology	RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
SS315B-HF	Comchip Technology	DIODE SCHOTTKY 150V 3A DO214AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 150 V Capacitance @ Vr, F: 400pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 150 V	400pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SS36BF-HF	Comchip Technology	DIODE SCHOTTKY 60V 3A SMBF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 450pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AA, SMB Flat Leads Supplier Device Package: SMBF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	60 V	3A	700 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	450pF @ 4V, 1MHz	Surface Mount	DO-221AA, SMB Flat Leads	SMBF	-55°C ~ 150°C
1N4454-TR-1	Microchip Technology	DIODE GEN PURP 75V 200MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Current - Reverse Leakage @ Vr: 100 nA @ 50 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	75 V	200mA	1 V @ 10 mA	Small Signal =< 200mA (Io), Any Speed	4 ns	100 nA @ 50 V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
SB2150	SMC Diode Solutions	DIODE SCHOTTKY 150V DO15 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 150 V Capacitance @ Vr, F: 140pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存5,793	150 V	-	880 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 150 V	140pF @ 5V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-55°C ~ 150°C
56DN06ELEMEVMITPRXPSA1	Infineon Technologies	DIODE GP 600V 6400A E-EUPEC-0 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6400A Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: E-EUPEC-0 Operating Temperature - Junction: 180°C (Max)	封装: -	Request a Quote	600 V	6400A	1.15 V @ 10000 A	Standard Recovery >500ns, > 200mA (Io)	-	100 mA @ 600 V	-	Clamp On	DO-200AB, B-PUK	E-EUPEC-0	180°C (Max)

RS3MB-13

Diodes Incorporated

DIODE GEN PURP 1KV 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存6,944

1000V

3A

1.3V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 1000V

50pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

1N4001RL

ON Semiconductor

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存5,040

50V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 50V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

VS-HFA16TB120SPBF

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 16A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 16A (DC)
Voltage - Forward (Vf) (Max) @ If: 3V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 135ns
Current - Reverse Leakage @ Vr: 20µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,448

1200V

16A (DC)

3V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

135ns

20µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 150°C

SRAF5100 C0G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 5A, 1

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 850mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: ITO-220AC
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-220-2 Full Pack

库存3,280

100V

5A

850mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 100V

-

Through Hole

TO-220-2 Full Pack

ITO-220AC

-55°C ~ 150°C

FESB8CTHE3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 150V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,496

150V

8A

950mV @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 150V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 150°C

FES16HT-E3/45

Vishay Semiconductor Diodes Division

DIODE GEN PURP 500V 16A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 500V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 16A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 500V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2

库存7,184

500V

16A

1.5V @ 16A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 500V

-

Through Hole

TO-220-2

TO-220AC

-65°C ~ 150°C

U2B-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 2A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 27ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存6,464

100V

2A

900mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

27ns

10µA @ 100V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

CDBMHT140-HF

Comchip Technology

DIODE SCHOTTKY 40V 1A SOD123T

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A (DC)
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 40V
Capacitance @ Vr, F: 120pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123T
Supplier Device Package: SOD-123HT
Operating Temperature - Junction: -55°C ~ 125°C

封装: SOD-123T

库存4,464

40V

1A (DC)

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 40V

120pF @ 4V, 1MHz

Surface Mount

SOD-123T

SOD-123HT

-55°C ~ 125°C

3A100 R0G

TSC America Inc.

DIODE, 3A, 1000V, DO-15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 27pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存2,048

-

3A

1.1V @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

27pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

1N4004-E3/53

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存5,440

400V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 400V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-50°C ~ 150°C

ISL9R18120S3ST

Fairchild/ON Semiconductor

DIODE GEN PURP 1.2KV 18A TO263-2

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1200V
Current - Average Rectified (Io): 18A
Voltage - Forward (Vf) (Max) @ If: 3.3V @ 18A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 100µA @ 1200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存12,624

1200V

18A

3.3V @ 18A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

100µA @ 1200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-55°C ~ 175°C

VS-15ETH06SPBF

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 15A 600V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 2.2V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 29ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存19,668

600V

15A

2.2V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

29ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

FFPF08S60SNTU

Fairchild/ON Semiconductor

DIODE GEN PURP 600V 8A TO220F

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3.4V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 100µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Supplier Device Package: TO-220F-2L
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-220-2 Full Pack

库存9,816

600V

8A

3.4V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

100µA @ 600V

-

Through Hole

TO-220-2 Full Pack

TO-220F-2L

-65°C ~ 150°C

SBYV27-200-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 200V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.07V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15ns
Current - Reverse Leakage @ Vr: 5µA @ 200V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存4,176

200V

2A

1.07V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

15ns

5µA @ 200V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

STTH15L06D

STMicroelectronics

DIODE GEN PURP 600V 15A TO220AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 15A
Voltage - Forward (Vf) (Max) @ If: 1.55V @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 85ns
Current - Reverse Leakage @ Vr: 15µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220AC
Operating Temperature - Junction: 175°C (Max)

封装: TO-220-2

库存30,948

600V

15A

1.55V @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

85ns

15µA @ 600V

-

Through Hole

TO-220-2

TO-220AC

175°C (Max)

STTH1R02QRL

STMicroelectronics

DIODE GEN PURP 200V 1.5A DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 3µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: 175°C (Max)

封装: DO-204AC, DO-15, Axial

库存43,152

200V

1.5A

1V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

3µA @ 200V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

175°C (Max)

1N2131

Solid State Inc.

DIODE GEN PURP 200V 70A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 25 µA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

200 V

70A

1.25 V @ 200 A

Standard Recovery >500ns, > 200mA (Io)

-

25 µA @ 200 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 200°C

GIB1401HE3_A-P

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 50V 8A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

50 V

8A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 50 V

-

Surface Mount

TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 150°C

GP10-4004-E3-54

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -

封装: -

Request a Quote

400 V

1A

-

Standard Recovery >500ns, > 200mA (Io)

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-

PUAD4D

Taiwan Semiconductor Corporation

25NS, 4A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 77pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: ThinDPAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存13,485

200 V

4A

920 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

2 µA @ 200 V

77pF @ 4V, 1MHz

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

ThinDPAK

-55°C ~ 175°C

60HFR10

Solid State Inc.

DIODE GEN PURP 100V 60A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 60A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 60 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

100 V

60A

1.3 V @ 60 A

Standard Recovery >500ns, > 200mA (Io)

-

200 µA @ 100 V

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

BAT165A-QX

Nexperia USA Inc.

DIODE SCHOTTKY 40V 500MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 750mA
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 750 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 8 µA @ 40 V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: 150°C

封装: -

Request a Quote

40 V

750mA

740 mV @ 750 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

8 µA @ 40 V

12pF @ 10V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

150°C

BYM07-150HE3_A-H

Vishay General Semiconductor - Diodes Division

DIODE GP 150V 500MA DO213AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Supplier Device Package: DO-213AA (GL34)
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

150 V

500mA

1.25 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 150 V

7pF @ 4V, 1MHz

Surface Mount

DO-213AA (Glass)

DO-213AA (GL34)

-65°C ~ 175°C

SF35GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 3A DO201AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 300 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存7,500

300 V

3A

1.3 V @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 300 V

60pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

R38120

Microchip Technology

RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

SS315B-HF

Comchip Technology

DIODE SCHOTTKY 150V 3A DO214AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 150 V
Capacitance @ Vr, F: 400pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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150 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 150 V

400pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

SS36BF-HF

Comchip Technology

DIODE SCHOTTKY 60V 3A SMBF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 450pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AA, SMB Flat Leads
Supplier Device Package: SMBF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

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60 V

3A

700 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

450pF @ 4V, 1MHz

Surface Mount

DO-221AA, SMB Flat Leads

SMBF

-55°C ~ 150°C

1N4454-TR-1

Microchip Technology

DIODE GEN PURP 75V 200MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

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75 V

200mA

1 V @ 10 mA

Small Signal =< 200mA (Io), Any Speed

4 ns

100 nA @ 50 V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

SB2150

SMC Diode Solutions

DIODE SCHOTTKY 150V DO15

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 150 V
Capacitance @ Vr, F: 140pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存5,793

150 V

-

880 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1 mA @ 150 V

140pF @ 5V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-55°C ~ 150°C

56DN06ELEMEVMITPRXPSA1

Infineon Technologies

DIODE GP 600V 6400A E-EUPEC-0

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6400A
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 10000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: E-EUPEC-0
Operating Temperature - Junction: 180°C (Max)

封装: -

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600 V

6400A

1.15 V @ 10000 A

Standard Recovery >500ns, > 200mA (Io)

-

100 mA @ 600 V

-

Clamp On

DO-200AB, B-PUK

E-EUPEC-0

180°C (Max)