页 1606 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MURH7060	GeneSiC Semiconductor	DIODE FAST REC 600V 70A D67 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 70A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 110ns Current - Reverse Leakage @ Vr: 25µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存5,328	600V	70A	1.7V @ 70A	Fast Recovery =< 500ns, > 200mA (Io)	110ns	25µA @ 600V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
DSM10G-TR-E	ON Semiconductor	DIODE GEN PURP 600V 1A SMD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 2-SMD, J-Lead Supplier Device Package: SMD Operating Temperature - Junction: 150°C (Max)	封装: 2-SMD, J-Lead	库存408,000	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 600V	-	Surface Mount	2-SMD, J-Lead	SMD	150°C (Max)
1N4007FF	ON Semiconductor	DIODE GEN PURP 1KV 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存3,408	1000V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 1000V	-	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 175°C
R7220206HSOO	Powerex Inc.	DIODE MODULE 200V 650A DO200AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 650A Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 50mA @ 200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AB, B-PUK Supplier Device Package: DO-200AB, B-PUK Operating Temperature - Junction: -	封装: DO-200AB, B-PUK	库存5,584	200V	650A	2.05V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	2µs	50mA @ 200V	-	Chassis Mount	DO-200AB, B-PUK	DO-200AB, B-PUK	-
JANTXV1N6076	Microsemi Corporation	DIODE GEN PURP 50V 1.3A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 1.3A Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: E, Axial Supplier Device Package: E-PAK Operating Temperature - Junction: -65°C ~ 155°C	封装: E, Axial	库存7,760	50V	1.3A	1.76V @ 18.8A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	E, Axial	E-PAK	-65°C ~ 155°C
1N3295AR	GeneSiC Semiconductor	DIODE GEN PURP REV 1KV DO205AA Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 11mA @ 1000V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 200°C	封装: DO-205AA, DO-8, Stud	库存7,440	1000V	100A	1.5V @ 100A	Standard Recovery >500ns, > 200mA (Io)	-	11mA @ 1000V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 200°C
VS-87HFLR60S02	Vishay Semiconductor Diodes Division	DIODE GENERAL PURPOSE 85A DO-5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 85A Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB (DO-5) Operating Temperature - Junction: -65°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存3,808	60V	85A	1.2V @ 267A	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
VS-10TQ045STRL-M3	Vishay Semiconductor Diodes Division	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 2mA @ 45V Capacitance @ Vr, F: 900pF @ 5V, 1MHz Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,304	45V	10A	570mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	2mA @ 45V	900pF @ 5V, 1MHz	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-55°C ~ 175°C
V12PM12HM3_A/H	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 120V 4.1A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 120V Current - Average Rectified (Io): 4.1A Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 120V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-277, 3-PowerDFN	库存5,584	120V	4.1A	830mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 120V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 150°C
RO 2BV1	Sanken	DIODE GEN PURP 800V 1.2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.2A Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 10µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存5,968	800V	1.2A	920mV @ 1.5A	Standard Recovery >500ns, > 200mA (Io)	-	10µA @ 800V	-	Through Hole	Axial	-	-40°C ~ 150°C
ZHCS400QTA	Diodes Incorporated	DIODE SCHOTTKY 40V 400MA SOD323 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40µA @ 30V Capacitance @ Vr, F: 20pF @ 25V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-76, SOD-323	库存7,232	40V	1A	780mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	40µA @ 30V	20pF @ 25V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
MURS240-M3/5BT	Vishay Semiconductor Diodes Division	DIODE RECT 2A 400V 50NS DO-214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-214AA, SMB	库存2,032	400V	2A	1.45V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-65°C ~ 175°C
SS3P6-M3/85A	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 60V 3A DO220AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 60V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-220AA Supplier Device Package: DO-220AA (SMP) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-220AA	库存3,040	60V	3A	780mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 60V	80pF @ 4V, 1MHz	Surface Mount	DO-220AA	DO-220AA (SMP)	-55°C ~ 150°C
2A07GHA0G	TSC America Inc.	DIODE, 2A, 1000V, AEC-Q101, DO-1 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1V @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AC, DO-15, Axial	库存5,520	-	2A	1V @ 2A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	15pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
SS24LHRQG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 400µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存5,008	40V	2A	500mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	400µA @ 40V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
SS14HR3G	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 1A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封装: DO-214AC, SMA	库存6,640	40V	1A	500mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	200µA @ 40V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
SB550	Fairchild/ON Semiconductor	DIODE SCHOTTKY 50V 5A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 50V Capacitance @ Vr, F: 380pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存4,368	50V	5A	670mV @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 50V	380pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
IDW40E65D1FKSA1	Infineon Technologies	DIODE GEN PURP 650V 80A TO247-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 650V Current - Average Rectified (Io): 80A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 129ns Current - Reverse Leakage @ Vr: 40µA @ 650V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -40°C ~ 175°C	封装: TO-247-3	库存12,612	650V	80A	1.7V @ 40A	Fast Recovery =< 500ns, > 200mA (Io)	129ns	40µA @ 650V	-	Through Hole	TO-247-3	TO-247-3	-40°C ~ 175°C
S115FP	Fairchild/ON Semiconductor	DIODE SCHOTTKY 150V 1A SOD123HE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50µA @ 150V Capacitance @ Vr, F: 32pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123H Supplier Device Package: SOD-123HE Operating Temperature - Junction: -55°C ~ 150°C	封装: SOD-123H	库存3,264	150V	1A	900mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	50µA @ 150V	32pF @ 4V, 1MHz	Surface Mount	SOD-123H	SOD-123HE	-55°C ~ 150°C
1N3879	GeneSiC Semiconductor	DIODE GEN PURP 50V 6A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200ns Current - Reverse Leakage @ Vr: 15µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存19,152	50V	6A	1.4V @ 6A	Fast Recovery =< 500ns, > 200mA (Io)	200ns	15µA @ 50V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
NRVBA340T3G	ON Semiconductor	DIODE SCHOTTKY 40V 3A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300µA @ 40V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AC, SMA	库存35,880	40V	3A	450mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	300µA @ 40V	-	Surface Mount	DO-214AC, SMA	SMA	-55°C ~ 150°C
MSASC75W100F	Microchip Technology	DIODE SCHOTTKY 100V 75A THINKEY4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 75A Voltage - Forward (Vf) (Max) @ If: 920 mV @ 75 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: ThinKey™4 Supplier Device Package: ThinKey™4 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	100 V	75A	920 mV @ 75 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 100 V	-	Surface Mount	ThinKey™4	ThinKey™4	-55°C ~ 175°C
CR250-4-BK	Central Semiconductor Corp	DIODE GEN PURP 4KV 200MA DO15 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: 30pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	4000 V	200mA	5 V @ 200 mA	Small Signal =< 200mA (Io), Any Speed	-	5 µA @ 4000 V	30pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
PDS760-13-2477	Diodes Incorporated	DIODE Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 7A Voltage - Forward (Vf) (Max) @ If: 620 mV @ 7 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 60 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI™ 5 Supplier Device Package: PowerDI™ 5 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	60 V	7A	620 mV @ 7 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 60 V	-	Surface Mount	PowerDI™ 5	PowerDI™ 5	-65°C ~ 150°C
12F80	Solid State Inc.	DIODE GEN PURP 800V 12A DO4 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -	封装: -	Request a Quote	800 V	12A	-	Standard Recovery >500ns, > 200mA (Io)	-	-	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4	-
NTE518	NTE Electronics, Inc	DIODE GEN PURP 10KV 25MA AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 10000 V Current - Average Rectified (Io): 25mA Voltage - Forward (Vf) (Max) @ If: 30 V @ 25 mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 µA @ 10000 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: Axial Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	10000 V	25mA	30 V @ 25 mA	Small Signal =< 200mA (Io), Any Speed	-	1 µA @ 10000 V	-	Through Hole	Axial	Axial	-55°C ~ 150°C
RURD30100	Harris Corporation	RECTIFIER DIODE, 30A, 1000V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
B0530W	HY Electronic (Cayman) Limited	High Speed Switching Diode Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 130 µA @ 30 V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123 Supplier Device Package: SOD-123 Operating Temperature - Junction: -	封装: -	Request a Quote	30 V	500mA	430 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	130 µA @ 30 V	170pF @ 0V, 1MHz	Surface Mount	SOD-123	SOD-123	-
MUR260GPL-AP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-15 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	600 V	2A	1.35 V @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Through Hole	DO-204AC, DO-15, Axial	DO-15	-65°C ~ 150°C
C3D16065D1	Wolfspeed, Inc.	DIODE SIL CARBIDE 650V TO247-3 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 95 µA @ 650 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247-3 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存969	650 V	-	1.8 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	95 µA @ 650 V	-	Through Hole	TO-247-3	TO-247-3	-55°C ~ 175°C

MURH7060

GeneSiC Semiconductor

DIODE FAST REC 600V 70A D67

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 70A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 70A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 110ns
Current - Reverse Leakage @ Vr: 25µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存5,328

600V

70A

1.7V @ 70A

Fast Recovery =< 500ns, > 200mA (Io)

110ns

25µA @ 600V

-

Chassis Mount

D-67

-55°C ~ 150°C

DSM10G-TR-E

ON Semiconductor

DIODE GEN PURP 600V 1A SMD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 2-SMD, J-Lead
Supplier Device Package: SMD
Operating Temperature - Junction: 150°C (Max)

封装: 2-SMD, J-Lead

库存408,000

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 600V

-

Surface Mount

2-SMD, J-Lead

SMD

150°C (Max)

1N4007FF

ON Semiconductor

DIODE GEN PURP 1KV 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存3,408

1000V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 1000V

-

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 175°C

R7220206HSOO

Powerex Inc.

DIODE MODULE 200V 650A DO200AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 650A
Voltage - Forward (Vf) (Max) @ If: 2.05V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 50mA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AB, B-PUK
Supplier Device Package: DO-200AB, B-PUK
Operating Temperature - Junction: -

封装: DO-200AB, B-PUK

库存5,584

200V

650A

2.05V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

2µs

50mA @ 200V

-

Chassis Mount

DO-200AB, B-PUK

-

JANTXV1N6076

Microsemi Corporation

DIODE GEN PURP 50V 1.3A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 1.3A
Voltage - Forward (Vf) (Max) @ If: 1.76V @ 18.8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: E, Axial
Supplier Device Package: E-PAK
Operating Temperature - Junction: -65°C ~ 155°C

封装: E, Axial

库存7,760

50V

1.3A

1.76V @ 18.8A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 50V

-

Through Hole

E, Axial

E-PAK

-65°C ~ 155°C

1N3295AR

GeneSiC Semiconductor

DIODE GEN PURP REV 1KV DO205AA

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 11mA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 200°C

封装: DO-205AA, DO-8, Stud

库存7,440

1000V

100A

1.5V @ 100A

Standard Recovery >500ns, > 200mA (Io)

-

11mA @ 1000V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 200°C

VS-87HFLR60S02

Vishay Semiconductor Diodes Division

DIODE GENERAL PURPOSE 85A DO-5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 85A
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 267A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB (DO-5)
Operating Temperature - Junction: -65°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存3,808

60V

85A

1.2V @ 267A

Standard Recovery >500ns, > 200mA (Io)

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB (DO-5)

-65°C ~ 180°C

VS-10TQ045STRL-M3

Vishay Semiconductor Diodes Division

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 570mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 2mA @ 45V
Capacitance @ Vr, F: 900pF @ 5V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,304

45V

10A

570mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

2mA @ 45V

900pF @ 5V, 1MHz

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-55°C ~ 175°C

V12PM12HM3_A/H

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 120V 4.1A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 120V
Current - Average Rectified (Io): 4.1A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 120V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-277, 3-PowerDFN

库存5,584

120V

4.1A

830mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 120V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 150°C

RO 2BV1

Sanken

DIODE GEN PURP 800V 1.2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.2A
Voltage - Forward (Vf) (Max) @ If: 920mV @ 1.5A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 10µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存5,968

800V

1.2A

920mV @ 1.5A

Standard Recovery >500ns, > 200mA (Io)

-

10µA @ 800V

-

Through Hole

Axial

-

-40°C ~ 150°C

ZHCS400QTA

Diodes Incorporated

DIODE SCHOTTKY 40V 400MA SOD323

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40µA @ 30V
Capacitance @ Vr, F: 20pF @ 25V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-76, SOD-323

库存7,232

40V

1A

780mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

40µA @ 30V

20pF @ 25V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

MURS240-M3/5BT

Vishay Semiconductor Diodes Division

DIODE RECT 2A 400V 50NS DO-214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.45V @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-214AA, SMB

库存2,032

400V

2A

1.45V @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-65°C ~ 175°C

SS3P6-M3/85A

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 60V 3A DO220AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 780mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 60V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-220AA
Supplier Device Package: DO-220AA (SMP)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-220AA

库存3,040

60V

3A

780mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 60V

80pF @ 4V, 1MHz

Surface Mount

DO-220AA

DO-220AA (SMP)

-55°C ~ 150°C

2A07GHA0G

TSC America Inc.

DIODE, 2A, 1000V, AEC-Q101, DO-1

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AC, DO-15, Axial

库存5,520

-

2A

1V @ 2A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 1000V

15pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

SS24LHRQG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 400µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存5,008

40V

2A

500mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

400µA @ 40V

-

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

SS14HR3G

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封装: DO-214AC, SMA

库存6,640

40V

1A

500mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

200µA @ 40V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

SB550

Fairchild/ON Semiconductor

DIODE SCHOTTKY 50V 5A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 670mV @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 50V
Capacitance @ Vr, F: 380pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存4,368

50V

5A

670mV @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 50V

380pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

IDW40E65D1FKSA1

Infineon Technologies

DIODE GEN PURP 650V 80A TO247-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 650V
Current - Average Rectified (Io): 80A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 40A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 129ns
Current - Reverse Leakage @ Vr: 40µA @ 650V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -40°C ~ 175°C

封装: TO-247-3

库存12,612

650V

80A

1.7V @ 40A

Fast Recovery =< 500ns, > 200mA (Io)

129ns

40µA @ 650V

-

Through Hole

TO-247-3

-40°C ~ 175°C

S115FP

Fairchild/ON Semiconductor

DIODE SCHOTTKY 150V 1A SOD123HE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 900mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50µA @ 150V
Capacitance @ Vr, F: 32pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123H
Supplier Device Package: SOD-123HE
Operating Temperature - Junction: -55°C ~ 150°C

封装: SOD-123H

库存3,264

150V

1A

900mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

50µA @ 150V

32pF @ 4V, 1MHz

Surface Mount

SOD-123H

SOD-123HE

-55°C ~ 150°C

1N3879

GeneSiC Semiconductor

DIODE GEN PURP 50V 6A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 6A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200ns
Current - Reverse Leakage @ Vr: 15µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存19,152

50V

6A

1.4V @ 6A

Fast Recovery =< 500ns, > 200mA (Io)

200ns

15µA @ 50V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

NRVBA340T3G

ON Semiconductor

DIODE SCHOTTKY 40V 3A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 450mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300µA @ 40V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AC, SMA

库存35,880

40V

3A

450mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

300µA @ 40V

-

Surface Mount

DO-214AC, SMA

SMA

-55°C ~ 150°C

MSASC75W100F

Microchip Technology

DIODE SCHOTTKY 100V 75A THINKEY4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 75A
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 75 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: ThinKey™4
Supplier Device Package: ThinKey™4
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

Request a Quote

100 V

75A

920 mV @ 75 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 100 V

-

Surface Mount

ThinKey™4

-55°C ~ 175°C

CR250-4-BK

Central Semiconductor Corp

DIODE GEN PURP 4KV 200MA DO15

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 5 V @ 200 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

4000 V

200mA

5 V @ 200 mA

Small Signal =< 200mA (Io), Any Speed

-

5 µA @ 4000 V

30pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

PDS760-13-2477

Diodes Incorporated

DIODE

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 7A
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 7 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 60 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

60 V

7A

620 mV @ 7 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 60 V

-

Surface Mount

PowerDI™ 5

-65°C ~ 150°C

12F80

Solid State Inc.

DIODE GEN PURP 800V 12A DO4

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -

封装: -

Request a Quote

800 V

12A

-

Standard Recovery >500ns, > 200mA (Io)

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4

-

NTE518

NTE Electronics, Inc

DIODE GEN PURP 10KV 25MA AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 10000 V
Current - Average Rectified (Io): 25mA
Voltage - Forward (Vf) (Max) @ If: 30 V @ 25 mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 µA @ 10000 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: Axial
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

10000 V

25mA

30 V @ 25 mA

Small Signal =< 200mA (Io), Any Speed

-

1 µA @ 10000 V

-

Through Hole

Axial

-55°C ~ 150°C

RURD30100

Harris Corporation

RECTIFIER DIODE, 30A, 1000V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

B0530W

HY Electronic (Cayman) Limited

High Speed Switching Diode

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 130 µA @ 30 V
Capacitance @ Vr, F: 170pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-123
Supplier Device Package: SOD-123
Operating Temperature - Junction: -

封装: -

Request a Quote

30 V

500mA

430 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

130 µA @ 30 V

170pF @ 0V, 1MHz

Surface Mount

SOD-123

-

MUR260GPL-AP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

600 V

2A

1.35 V @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

-

Through Hole

DO-204AC, DO-15, Axial

DO-15

-65°C ~ 150°C

C3D16065D1

Wolfspeed, Inc.

DIODE SIL CARBIDE 650V TO247-3

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 16 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 95 µA @ 650 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存969

650 V

-

1.8 V @ 16 A

No Recovery Time > 500mA (Io)

0 ns

95 µA @ 650 V

-

Through Hole

TO-247-3

-55°C ~ 175°C