页 1588 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
CDBMH3100-HF
Comchip Technology

DIODE SCHOTTKY 100V 3A SOD123T

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123T
  • Supplier Device Package: SOD-123T
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: SOD-123T
库存6,640
100V
3A (DC)
850mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
200µA @ 100V
-
Surface Mount
SOD-123T
SOD-123T
-55°C ~ 150°C
SRP300G-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 3A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: 28pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -50°C ~ 125°C
封装: DO-201AD, Axial
库存6,960
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 400V
28pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-50°C ~ 125°C
MA2SD290GL
Panasonic Electronic Components

DIODE SCHOTTKY 30V 100MA SSMINI2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 420mV @ 100mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 120µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SC-79, SOD-523
  • Supplier Device Package: SSMini2-F4
  • Operating Temperature - Junction: 125°C (Max)
封装: SC-79, SOD-523
库存3,488
30V
100mA
420mV @ 100mA
Small Signal =< 200mA (Io), Any Speed
1ns
120µA @ 30V
-
Surface Mount
SC-79, SOD-523
SSMini2-F4
125°C (Max)
BAS16WH6327XTSA1
Infineon Technologies

DIODE GEN PURP 80V 250MA SOT323

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 80V
  • Current - Average Rectified (Io): 250mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 4ns
  • Current - Reverse Leakage @ Vr: 1µA @ 75V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-70, SOT-323
  • Supplier Device Package: PG-SOT323-3
  • Operating Temperature - Junction: 150°C (Max)
封装: SC-70, SOT-323
库存6,704
80V
250mA (DC)
1.25V @ 150mA
Fast Recovery =< 500ns, > 200mA (Io)
4ns
1µA @ 75V
2pF @ 0V, 1MHz
Surface Mount
SC-70, SOT-323
PG-SOT323-3
150°C (Max)
R9G04212XX
Powerex Inc.

DIODE MODULE 4.2KV 1200A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 4200V
  • Current - Average Rectified (Io): 1200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 150mA @ 4200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
封装: DO-200AB, B-PUK
库存3,168
4200V
1200A
1.45V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
25µs
150mA @ 4200V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
DHG30IM600PC
IXYS

DIODE GEN PURP 600V 30A TO263

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.37V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263 (D2Pak)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,856
600V
30A
2.37V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
50µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
-55°C ~ 150°C
SRA2050 C0G
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 20A,

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 700mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 50V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存2,416
50V
20A
700mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
VF30120SG-M3/4W
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 30A 120V ITO220AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 120V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500µA @ 120V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-3 Isolated Tab
  • Supplier Device Package: ITO-220AB
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-3 Isolated Tab
库存3,824
120V
30A
1.28V @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 120V
-
Through Hole
TO-220-3 Isolated Tab
ITO-220AB
-40°C ~ 150°C
BYWE29-100-E3/45
Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 8A TO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25ns
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: TO-220-2
库存4,592
100V
8A
1.3V @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
25ns
10µA @ 100V
45pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-65°C ~ 150°C
CMR3U-06 BK
Central Semiconductor Corp

DIODE GEN PURP 600V 3A SMC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.4V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 100ns
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存3,904
600V
3A
1.4V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
100ns
5µA @ 600V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
hot ES1CE-TP
Micro Commercial Co

DIODE GEN PURP 150V SMAE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 975mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 5µA @ 150V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMAE
  • Operating Temperature - Junction: -50°C ~ 150°C
封装: DO-214AC, SMA
库存120,000
150V
1A
975mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMAE
-50°C ~ 150°C
SS13L MTG
TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 1A, 3

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 500mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 400µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: DO-219AB
库存5,776
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
RS1GLWHRVG
TSC America Inc.

DIODE, FAST, 1A, 400V, 150NS, AE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 5µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: SOD-123W
库存2,512
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
-
Surface Mount
SOD-123W
SOD123W
-55°C ~ 175°C
SD101AWS-TP
Micro Commercial Co

DIODE SCHOTTKY 60V 15MA SOD323

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 15mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 15mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 1ns
  • Current - Reverse Leakage @ Vr: 200nA @ 50V
  • Capacitance @ Vr, F: 2pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SC-76, SOD-323
  • Supplier Device Package: SOD-323
  • Operating Temperature - Junction: -55°C ~ 125°C
封装: SC-76, SOD-323
库存4,144
60V
15mA
1V @ 15mA
Small Signal =< 200mA (Io), Any Speed
1ns
200nA @ 50V
2pF @ 0V, 1MHz
Surface Mount
SC-76, SOD-323
SOD-323
-55°C ~ 125°C
VS-40HF120
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.2KV 40A DO203AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 125A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 9mA @ 1200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-203AB, DO-5, Stud
  • Supplier Device Package: DO-203AB
  • Operating Temperature - Junction: -65°C ~ 190°C
封装: DO-203AB, DO-5, Stud
库存7,952
1200V
40A
1.3V @ 125A
Standard Recovery >500ns, > 200mA (Io)
-
9mA @ 1200V
-
Chassis, Stud Mount
DO-203AB, DO-5, Stud
DO-203AB
-65°C ~ 190°C
SBR2U100LP-7
Diodes Incorporated

DIODE SBR 100V 1.5A X1-DFN1411-3

  • Diode Type: Super Barrier
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 850mV @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 3-UDFN
  • Supplier Device Package: X1-DFN1411-3
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: 3-UDFN
库存3,392
100V
1.5A
850mV @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
3-UDFN
X1-DFN1411-3
-55°C ~ 150°C
hot MBR0530
Fairchild/ON Semiconductor

DIODE SCHOTTKY 30V 500MA SOD123

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 500mA
  • Voltage - Forward (Vf) (Max) @ If: 430mV @ 500mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 130µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123
  • Supplier Device Package: SOD-123
  • Operating Temperature - Junction: -65°C ~ 125°C
封装: SOD-123
库存1,548,672
30V
500mA
430mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
130µA @ 30V
-
Surface Mount
SOD-123
SOD-123
-65°C ~ 125°C
CDBHD1100L-HF
Comchip Technology

DIODE SCHOTTKY 1A 100V TO-269AA

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
SS2060LHE_R1_00001
Panjit International Inc.

DIODE SCHOTTKY 60V 2A SOD123HE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 230pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123H
  • Supplier Device Package: SOD-123HE
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存16,908
60 V
2A
670 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
230pF @ 0V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
MBRS240LT3
onsemi

DIODE SCHOTTKY 40V 2A SMB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 430 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 2 mA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: SMB
  • Operating Temperature - Junction: -
封装: -
Request a Quote
40 V
2A
430 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
2 mA @ 40 V
-
Surface Mount
DO-214AA, SMB
SMB
-
MUR140GP-TP
Micro Commercial Co

DIODE GEN PURP 400V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 45 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 400 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
Request a Quote
400 V
1A
1.35 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
45 ns
5 µA @ 400 V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 150°C
SIDC08D120H8X1SA1
Infineon Technologies

DIODE GEN PURP 1.2KV 150A WAFER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 150A
  • Voltage - Forward (Vf) (Max) @ If: 1.41 V @ 45 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 27 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
Request a Quote
1200 V
150A
1.41 V @ 45 A
Standard Recovery >500ns, > 200mA (Io)
-
27 µA @ 1200 V
-
-
-
-
-40°C ~ 175°C
MSC030SDA070B
Microchip Technology

DIODE SIL CARBIDE 700V 60A TO247

  • Diode Type: SiC (Silicon Carbide) Schottky
  • Voltage - DC Reverse (Vr) (Max): 700 V
  • Current - Average Rectified (Io): 60A
  • Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 30 A
  • Speed: No Recovery Time > 500mA (Io)
  • Reverse Recovery Time (trr): 0 ns
  • Current - Reverse Leakage @ Vr: 200 µA @ 700 V
  • Capacitance @ Vr, F: 1200pF @ 1V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存249
700 V
60A
1.8 V @ 30 A
No Recovery Time > 500mA (Io)
0 ns
200 µA @ 700 V
1200pF @ 1V, 1MHz
Through Hole
TO-247-2
TO-247
-55°C ~ 175°C
CURC303-HF
Comchip Technology

DIODE ULTRA FAST RECT 200V 3A DO

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: 150°C
封装: -
Request a Quote
200 V
3A
1 V @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
5 µA @ 200 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
150°C
SBRA8160NT3G
onsemi

DIODE SCHOTTKY 60V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 720 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 200 µA @ 60 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存38,670
60 V
1A
720 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
200 µA @ 60 V
-
Surface Mount
DO-214AC, SMA
SMA
-55°C ~ 150°C
NTE177
NTE Electronics, Inc

DIODE GEN PURP 200V 250MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 250mA
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 100 nA @ 150 V
  • Capacitance @ Vr, F: 1.5pF @ 0V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: 175°C (Max)
封装: -
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200 V
250mA
1.25 V @ 200 mA
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
100 nA @ 150 V
1.5pF @ 0V, 1MHz
Through Hole
DO-204AH, DO-35, Axial
DO-35
175°C (Max)
NTE552
NTE Electronics, Inc

DIODE GEN PURP 600V 1A DO41

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 200 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-41
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
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600 V
1A
1.2 V @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
200 ns
5 µA @ 600 V
15pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-41
-65°C ~ 175°C
S50340TS
Microchip Technology

STD RECTIFIER

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
HS2KA
Taiwan Semiconductor Corporation

DIODE GEN PURP 800V 1.5A DO214AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1.5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存45,000
800 V
1.5A
1.7 V @ 1.5 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SR805H
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 50V 8A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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50 V
8A
700 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 50 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C