页 1536 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
RFN5B2STL	Rohm Semiconductor	DIODE GEN PURPOSE CPD Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存67,200	-	-	-	-	-	-	-	-	-	-	-
R9G20811ASOO	Powerex Inc.	DIODE FAST REC R9G 1100A 800V Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,368	-	-	-	-	-	-	-	-	-	-	-
MBR360RL	ON Semiconductor	DIODE SCHOTTKY 60V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 600µA @ 60V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AA, DO-27, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-201AA, DO-27, Axial	库存20,916	60V	3A	740mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	-	600µA @ 60V	-	Through Hole	DO-201AA, DO-27, Axial	DO-201AD	-65°C ~ 150°C
8AF05NPP	Vishay Semiconductor Diodes Division	DIODE GEN PURP 50V 50A B47 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: - Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 7mA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-47 Supplier Device Package: B-47 Operating Temperature - Junction: -65°C ~ 195°C	封装: B-47	库存3,360	50V	50A	-	Standard Recovery >500ns, > 200mA (Io)	-	7mA @ 50V	-	Chassis, Stud Mount	B-47	B-47	-65°C ~ 195°C
R5020410RSWA	Powerex Inc.	DIODE GEN PURP 400V 100A DO205AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 100A Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300ns Current - Reverse Leakage @ Vr: 45mA @ 400V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AA, DO-8, Stud Supplier Device Package: DO-205AA (DO-8) Operating Temperature - Junction: -40°C ~ 150°C	封装: DO-205AA, DO-8, Stud	库存3,904	400V	100A	2.7V @ 100A	Fast Recovery =< 500ns, > 200mA (Io)	300ns	45mA @ 400V	-	Chassis, Stud Mount	DO-205AA, DO-8, Stud	DO-205AA (DO-8)	-40°C ~ 150°C
1N6097R	GeneSiC Semiconductor	DIODE SCHOTTKY REV 30V DO5 Diode Type: Schottky, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5mA @ 30V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AB, DO-5, Stud	库存2,368	30V	50A	700mV @ 50A	Fast Recovery =< 500ns, > 200mA (Io)	-	5mA @ 30V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-65°C ~ 150°C
VS-12FL60S05	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 12A DO203AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存4,144	600V	12A	1.4V @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	50µA @ 600V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-65°C ~ 150°C
FR12BR05	GeneSiC Semiconductor	DIODE GEN PURP REV 100V 12A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 25µA @ 100V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-203AA, DO-4, Stud	库存2,768	100V	12A	800mV @ 12A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	25µA @ 100V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-4	-65°C ~ 150°C
SBRT20M80SP5-13D	Diodes Incorporated	DIODE SBR 80V 20A POWERDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200µA @ 80V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI?5 Operating Temperature - Junction: -55°C ~ 150°C	封装: PowerDI? 5	库存3,392	80V	20A	660mV @ 20A	Standard Recovery >500ns, > 200mA (Io)	-	200µA @ 80V	-	Surface Mount	PowerDI? 5	PowerDI?5	-55°C ~ 150°C
RL 2Z	Sanken	DIODE GEN PURP 200V 2A AXIAL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50µA @ 200V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: Axial Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 150°C	封装: Axial	库存2,784	200V	2A	980mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	50µA @ 200V	-	Through Hole	Axial	-	-40°C ~ 150°C
XBS053V15R-G	Torex Semiconductor Ltd	DIODE SCHOTTKY 20V 500MA SOD523 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 8ns Current - Reverse Leakage @ Vr: 100µA @ 20V Capacitance @ Vr, F: 12pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SOD-523 Operating Temperature - Junction: 125°C (Max)	封装: SC-79, SOD-523	库存440,496	20V	500mA	470mV @ 500mA	Fast Recovery =< 500ns, > 200mA (Io)	8ns	100µA @ 20V	12pF @ 10V, 1MHz	Surface Mount	SC-79, SOD-523	SOD-523	125°C (Max)
BAS20-HE3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 150V 200MA SOT23 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 100nA @ 150V Capacitance @ Vr, F: 5pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23 Operating Temperature - Junction: -55°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存3,120	150V	200mA	1.25V @ 200mA	Small Signal =< 200mA (Io), Any Speed	50ns	100nA @ 150V	5pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23	-55°C ~ 150°C
FFB10UP20STM	Fairchild/ON Semiconductor	DIODE GEN PURP 200V 10A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 45ns Current - Reverse Leakage @ Vr: 100µA @ 200V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存7,840	200V	10A	1.15V @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	45ns	100µA @ 200V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 150°C
STTH3R04U	STMicroelectronics	DIODE GEN PURP 400V 3A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: 175°C (Max)	封装: DO-214AA, SMB	库存558,960	400V	3A	1.5V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 400V	-	Surface Mount	DO-214AA, SMB	SMB	175°C (Max)
CURC307-G	Comchip Technology	DIODE GEN PURP 1KV 3A DO214AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: 150°C (Max)	封装: DO-214AB, SMC	库存98,928	1000V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 1000V	-	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	150°C (Max)
FM4000GP-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 4000 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Current - Reverse Leakage @ Vr: 5 µA @ 4000 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	4000 V	500mA	5 V @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	300 ns	5 µA @ 4000 V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 125°C
JANTXV1N6764	Microchip Technology	DIODE GEN PURP 150V 12A TO254 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 12A Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 300pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-254-3, TO-254AA Supplier Device Package: TO-254 Operating Temperature - Junction: -	封装: -	Request a Quote	150 V	12A	1.05 V @ 12 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 200 V	300pF @ 5V, 1MHz	Through Hole	TO-254-3, TO-254AA	TO-254	-
V8PM15-M3-I	Vishay General Semiconductor - Diodes Division	DIODE SCHOTTKY 150V 8A TO277A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150 µA @ 150 V Capacitance @ Vr, F: 460pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	150 V	8A	1.08 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	-	150 µA @ 150 V	460pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-40°C ~ 175°C
SE8D30D-M3-H	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 200V 3A SLIMSMAW Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 1.2 µs Current - Reverse Leakage @ Vr: 10 µA @ 200 V Capacitance @ Vr, F: 19pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-221AC, SMA Flat Leads Supplier Device Package: SlimSMAW (DO-221AD) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存39,300	200 V	3A	1.1 V @ 3 A	Standard Recovery >500ns, > 200mA (Io)	1.2 µs	10 µA @ 200 V	19pF @ 4V, 1MHz	Surface Mount	DO-221AC, SMA Flat Leads	SlimSMAW (DO-221AD)	-55°C ~ 175°C
SS13_R1_00001	Panjit International Inc.	DIODE SCHOTTKY 30V 1A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 200 µA @ 30 V Capacitance @ Vr, F: 70pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA (DO-214AC) Operating Temperature - Junction: -55°C ~ 125°C	封装: -	库存6,756	30 V	1A	500 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	-	200 µA @ 30 V	70pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA (DO-214AC)	-55°C ~ 125°C
FR101B-G	Comchip Technology	DIODE GEN PURP 50V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 50 V	25pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
FR102T-R	EIC SEMICONDUCTOR INC.	DIODE GEN PURP 100V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 100 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	100 V	1A	1.3 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 100 V	50pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-65°C ~ 150°C
BA157GH	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO204AL Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: 5 µA @ 400 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	库存30,000	400 V	1A	1.2 V @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	5 µA @ 400 V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
SF23G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 2A DO204AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 150 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 150 V Capacitance @ Vr, F: 40pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AC, DO-15, Axial Supplier Device Package: DO-204AC (DO-15) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	150 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 150 V	40pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
1N3622R	Microchip Technology	DIODE GEN PURP 600V 16A DO4 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 16A Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1 mA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-4 (DO-203AA) Operating Temperature - Junction: -65°C ~ 200°C	封装: -	Request a Quote	600 V	16A	1.2 V @ 50 A	Standard Recovery >500ns, > 200mA (Io)	-	1 mA @ 600 V	-	Stud Mount	DO-203AA, DO-4, Stud	DO-4 (DO-203AA)	-65°C ~ 200°C
STPSC10H065DLF	STMicroelectronics	DIODE SIL CARB 650V 10A PWRFLAT Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 100 µA @ 650 V Capacitance @ Vr, F: 595pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Supplier Device Package: PowerFlat™ (8x8) HV Operating Temperature - Junction: -40°C ~ 175°C	封装: -	Request a Quote	650 V	10A	1.55 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 650 V	595pF @ 0V, 1MHz	Surface Mount	8-PowerVDFN	PowerFlat™ (8x8) HV	-40°C ~ 175°C
SR303	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 30V 3A DO201AD Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 30 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 125°C	封装: -	Request a Quote	30 V	3A	550 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 30 V	-	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 125°C
SM4933A-TP	Micro Commercial Co	DIODE GEN PURP 50V 1A DO214AC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: - Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 200 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	50 V	1A	-	Fast Recovery =< 500ns, > 200mA (Io)	200 ns	5 µA @ 50 V	15pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
YQ2LAM10BTR	Rohm Semiconductor	TRENCH MOS STRUCTURE, 100V, 2A Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 15 µA @ 100 V Capacitance @ Vr, F: 60pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: PMDTM Operating Temperature - Junction: 175°C	封装: -	库存8,970	100 V	2A	670 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	15 µA @ 100 V	60pF @ 4V, 1MHz	Surface Mount	SOD-128	PMDTM	175°C
JANS1N6872UTK2CS-TR	Microchip Technology	POWER SCHOTTKY Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-

RFN5B2STL

Rohm Semiconductor

DIODE GEN PURPOSE CPD

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存67,200

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R9G20811ASOO

Powerex Inc.

DIODE FAST REC R9G 1100A 800V

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,368

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MBR360RL

ON Semiconductor

DIODE SCHOTTKY 60V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 740mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 600µA @ 60V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AA, DO-27, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-201AA, DO-27, Axial

库存20,916

60V

3A

740mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

-

600µA @ 60V

-

Through Hole

DO-201AA, DO-27, Axial

DO-201AD

-65°C ~ 150°C

8AF05NPP

Vishay Semiconductor Diodes Division

DIODE GEN PURP 50V 50A B47

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 7mA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-47
Supplier Device Package: B-47
Operating Temperature - Junction: -65°C ~ 195°C

封装: B-47

库存3,360

50V

50A

-

Standard Recovery >500ns, > 200mA (Io)

-

7mA @ 50V

-

Chassis, Stud Mount

B-47

-65°C ~ 195°C

R5020410RSWA

Powerex Inc.

DIODE GEN PURP 400V 100A DO205AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 100A
Voltage - Forward (Vf) (Max) @ If: 2.7V @ 100A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300ns
Current - Reverse Leakage @ Vr: 45mA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AA, DO-8, Stud
Supplier Device Package: DO-205AA (DO-8)
Operating Temperature - Junction: -40°C ~ 150°C

封装: DO-205AA, DO-8, Stud

库存3,904

400V

100A

2.7V @ 100A

Fast Recovery =< 500ns, > 200mA (Io)

300ns

45mA @ 400V

-

Chassis, Stud Mount

DO-205AA, DO-8, Stud

DO-205AA (DO-8)

-40°C ~ 150°C

1N6097R

GeneSiC Semiconductor

DIODE SCHOTTKY REV 30V DO5

Diode Type: Schottky, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 30V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 700mV @ 50A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5mA @ 30V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AB, DO-5, Stud

库存2,368

30V

50A

700mV @ 50A

Fast Recovery =< 500ns, > 200mA (Io)

-

5mA @ 30V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-65°C ~ 150°C

VS-12FL60S05

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 12A DO203AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存4,144

600V

12A

1.4V @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

50µA @ 600V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-65°C ~ 150°C

FR12BR05

GeneSiC Semiconductor

DIODE GEN PURP REV 100V 12A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 800mV @ 12A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 25µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-203AA, DO-4, Stud

库存2,768

100V

12A

800mV @ 12A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

25µA @ 100V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-4

-65°C ~ 150°C

SBRT20M80SP5-13D

Diodes Incorporated

DIODE SBR 80V 20A POWERDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 80V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 660mV @ 20A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200µA @ 80V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI?5
Operating Temperature - Junction: -55°C ~ 150°C

封装: PowerDI? 5

库存3,392

80V

20A

660mV @ 20A

Standard Recovery >500ns, > 200mA (Io)

-

200µA @ 80V

-

Surface Mount

PowerDI? 5

PowerDI?5

-55°C ~ 150°C

RL 2Z

Sanken

DIODE GEN PURP 200V 2A AXIAL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 980mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 50µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: Axial
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 150°C

封装: Axial

库存2,784

200V

2A

980mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

50µA @ 200V

-

Through Hole

Axial

-

-40°C ~ 150°C

XBS053V15R-G

Torex Semiconductor Ltd

DIODE SCHOTTKY 20V 500MA SOD523

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 20V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 470mV @ 500mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8ns
Current - Reverse Leakage @ Vr: 100µA @ 20V
Capacitance @ Vr, F: 12pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-79, SOD-523
Supplier Device Package: SOD-523
Operating Temperature - Junction: 125°C (Max)

封装: SC-79, SOD-523

库存440,496

20V

500mA

470mV @ 500mA

Fast Recovery =< 500ns, > 200mA (Io)

8ns

100µA @ 20V

12pF @ 10V, 1MHz

Surface Mount

SC-79, SOD-523

SOD-523

125°C (Max)

BAS20-HE3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 200MA SOT23

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 200mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 100nA @ 150V
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23
Operating Temperature - Junction: -55°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存3,120

150V

200mA

1.25V @ 200mA

Small Signal =< 200mA (Io), Any Speed

50ns

100nA @ 150V

5pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23

-55°C ~ 150°C

FFB10UP20STM

Fairchild/ON Semiconductor

DIODE GEN PURP 200V 10A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.15V @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45ns
Current - Reverse Leakage @ Vr: 100µA @ 200V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存7,840

200V

10A

1.15V @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

45ns

100µA @ 200V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 150°C

STTH3R04U

STMicroelectronics

DIODE GEN PURP 400V 3A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.5V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: 175°C (Max)

封装: DO-214AA, SMB

库存558,960

400V

3A

1.5V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 400V

-

Surface Mount

DO-214AA, SMB

SMB

175°C (Max)

CURC307-G

Comchip Technology

DIODE GEN PURP 1KV 3A DO214AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: 150°C (Max)

封装: DO-214AB, SMC

库存98,928

1000V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 1000V

-

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

150°C (Max)

FM4000GP-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 4000 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 5 V @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Current - Reverse Leakage @ Vr: 5 µA @ 4000 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

4000 V

500mA

5 V @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

300 ns

5 µA @ 4000 V

-

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 125°C

JANTXV1N6764

Microchip Technology

DIODE GEN PURP 150V 12A TO254

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 12A
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 12 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 300pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-254-3, TO-254AA
Supplier Device Package: TO-254
Operating Temperature - Junction: -

封装: -

Request a Quote

150 V

12A

1.05 V @ 12 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 200 V

300pF @ 5V, 1MHz

Through Hole

TO-254-3, TO-254AA

TO-254

-

V8PM15-M3-I

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 150V 8A TO277A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.08 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150 µA @ 150 V
Capacitance @ Vr, F: 460pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

150 V

8A

1.08 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

-

150 µA @ 150 V

460pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-40°C ~ 175°C

SE8D30D-M3-H

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 200V 3A SLIMSMAW

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 3 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 1.2 µs
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Capacitance @ Vr, F: 19pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-221AC, SMA Flat Leads
Supplier Device Package: SlimSMAW (DO-221AD)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存39,300

200 V

3A

1.1 V @ 3 A

Standard Recovery >500ns, > 200mA (Io)

1.2 µs

10 µA @ 200 V

19pF @ 4V, 1MHz

Surface Mount

DO-221AC, SMA Flat Leads

SlimSMAW (DO-221AD)

-55°C ~ 175°C

SS13_R1_00001

Panjit International Inc.

DIODE SCHOTTKY 30V 1A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 200 µA @ 30 V
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA (DO-214AC)
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

库存6,756

30 V

1A

500 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

-

200 µA @ 30 V

70pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA (DO-214AC)

-55°C ~ 125°C

FR101B-G

Comchip Technology

DIODE GEN PURP 50V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 50 V

25pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

FR102T-R

EIC SEMICONDUCTOR INC.

DIODE GEN PURP 100V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

100 V

1A

1.3 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 100 V

50pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-65°C ~ 150°C

BA157GH

Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 1A DO204AL

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

库存30,000

400 V

1A

1.2 V @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

5 µA @ 400 V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

SF23G

Taiwan Semiconductor Corporation

DIODE GEN PURP 150V 2A DO204AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 150 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Capacitance @ Vr, F: 40pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

150 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 150 V

40pF @ 4V, 1MHz

Through Hole

DO-204AC, DO-15, Axial

DO-204AC (DO-15)

-55°C ~ 150°C

1N3622R

Microchip Technology

DIODE GEN PURP 600V 16A DO4

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 16A
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1 mA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-4 (DO-203AA)
Operating Temperature - Junction: -65°C ~ 200°C

封装: -

Request a Quote

600 V

16A

1.2 V @ 50 A

Standard Recovery >500ns, > 200mA (Io)

-

1 mA @ 600 V

-

Stud Mount

DO-203AA, DO-4, Stud

DO-4 (DO-203AA)

-65°C ~ 200°C

STPSC10H065DLF

STMicroelectronics

DIODE SIL CARB 650V 10A PWRFLAT

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 1.55 V @ 10 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 100 µA @ 650 V
Capacitance @ Vr, F: 595pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Supplier Device Package: PowerFlat™ (8x8) HV
Operating Temperature - Junction: -40°C ~ 175°C

封装: -

Request a Quote

650 V

10A

1.55 V @ 10 A

No Recovery Time > 500mA (Io)

0 ns

100 µA @ 650 V

595pF @ 0V, 1MHz

Surface Mount

8-PowerVDFN

PowerFlat™ (8x8) HV

-40°C ~ 175°C

SR303

Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 3A DO201AD

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 30 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 30 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 125°C

封装: -

Request a Quote

30 V

3A

550 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 30 V

-

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 125°C

SM4933A-TP

Micro Commercial Co

DIODE GEN PURP 50V 1A DO214AC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: -
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

50 V

1A

-

Fast Recovery =< 500ns, > 200mA (Io)

200 ns

5 µA @ 50 V

15pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

DO-214AC (SMA)

-55°C ~ 150°C

YQ2LAM10BTR

Rohm Semiconductor

TRENCH MOS STRUCTURE, 100V, 2A

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 15 µA @ 100 V
Capacitance @ Vr, F: 60pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: SOD-128
Supplier Device Package: PMDTM
Operating Temperature - Junction: 175°C

封装: -

库存8,970

100 V

2A

670 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

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15 µA @ 100 V

60pF @ 4V, 1MHz

Surface Mount

SOD-128

PMDTM

175°C

JANS1N6872UTK2CS-TR

Microchip Technology

POWER SCHOTTKY

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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