页 1531 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
MBRH30035RL	GeneSiC Semiconductor	DIODE SCHOTTKY 35V 300A D67 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 35V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 3mA @ 35V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: D-67 Supplier Device Package: D-67 Operating Temperature - Junction: -55°C ~ 150°C	封装: D-67	库存3,888	35V	300A	600mV @ 300A	-	-	3mA @ 35V	-	Chassis Mount	D-67	D-67	-55°C ~ 150°C
8ETX06STRR	Vishay Semiconductor Diodes Division	DIODE GEN PURP 600V 8A D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 3V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 24ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: D2PAK Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,592	600V	8A	3V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	24ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	D2PAK	-65°C ~ 175°C
MMBD914-7	Diodes Incorporated	DIODE GEN PURP 75V 200MA SOT23-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3 Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-236-3, SC-59, SOT-23-3	库存52,656	75V	200mA	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	4ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3	-65°C ~ 150°C
B1100B-13	Diodes Incorporated	DIODE SCHOTTKY 100V 1A SMB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB Operating Temperature - Junction: -65°C ~ 150°C	封装: DO-214AA, SMB	库存3,216	100V	1A	790mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	80pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB	-65°C ~ 150°C
VS-20ETF10STRR-M3	Vishay Semiconductor Diodes Division	DIODE GEN PURP 1KV 20A TO263AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1000V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400ns Current - Reverse Leakage @ Vr: 100µA @ 1000V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,304	1000V	20A	1.31V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	400ns	100µA @ 1000V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263 (D2Pak)	-40°C ~ 150°C
VI40100GHM3/4W	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 20A TO262AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 810mV @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500µA @ 100V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA Supplier Device Package: TO-262AA Operating Temperature - Junction: -40°C ~ 150°C	封装: TO-262-3 Long Leads, I2Pak, TO-262AA	库存7,392	100V	20A	810mV @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	-	500µA @ 100V	-	Through Hole	TO-262-3 Long Leads, I2Pak, TO-262AA	TO-262AA	-40°C ~ 150°C
VS-8ETH06STRLPBF	Vishay Semiconductor Diodes Division	DIODE HYPERFAST 8A 600V D2PAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB (D2PAK) Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存4,448	600V	8A	2.4V @ 8A	Fast Recovery =< 500ns, > 200mA (Io)	25ns	50µA @ 600V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB (D2PAK)	-65°C ~ 175°C
MB10H100HE3_A/I	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 100V 10A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 10A Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 4.5µA @ 100V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 175°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存6,288	100V	10A	770mV @ 10A	Fast Recovery =< 500ns, > 200mA (Io)	-	4.5µA @ 100V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 175°C
BYV28-050-TR	Vishay Semiconductor Diodes Division	DIODE AVALANCHE 50V 3.5A SOD64 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 50V Current - Average Rectified (Io): 3.5A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30ns Current - Reverse Leakage @ Vr: 1µA @ 50V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	封装: SOD-64, Axial	库存7,264	50V	3.5A	1.1V @ 5A	Fast Recovery =< 500ns, > 200mA (Io)	30ns	1µA @ 50V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
SF5407-TR	Vishay Semiconductor Diodes Division	DIODE AVAL 3A 800V SOD-64 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: SOD-64, Axial Supplier Device Package: SOD-64 Operating Temperature - Junction: -55°C ~ 175°C	封装: SOD-64, Axial	库存7,456	800V	3A	1.7V @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	-	Through Hole	SOD-64, Axial	SOD-64	-55°C ~ 175°C
SF42G A0G	TSC America Inc.	DIODE, SUPER FAST, 4A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 1V @ 4A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 100pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-201AD, Axial Supplier Device Package: DO-201AD Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-201AD, Axial	库存4,304	100V	4A	1V @ 4A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	100pF @ 4V, 1MHz	Through Hole	DO-201AD, Axial	DO-201AD	-55°C ~ 150°C
EGL41B/1	Vishay Semiconductor Diodes Division	DIODE GEN PURP 100V 1A DO213AB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 5µA @ 100V Capacitance @ Vr, F: 20pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-213AB, MELF (Glass) Supplier Device Package: DO-213AB Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-213AB, MELF (Glass)	库存3,504	100V	1A	1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 100V	20pF @ 4V, 1MHz	Surface Mount	DO-213AB, MELF (Glass)	DO-213AB	-65°C ~ 175°C
SS24M RSG	TSC America Inc.	DIODE, SCHOTTKY, STANDARD, 2A, 4 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 150µA @ 40V Capacitance @ Vr, F: 35pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: Micro SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: 2-SMD, Flat Lead	库存180,000	40V	2A	600mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	150µA @ 40V	35pF @ 4V, 1MHz	Surface Mount	2-SMD, Flat Lead	Micro SMA	-55°C ~ 150°C
DSA75-18B	IXYS	DIODE AVALANCHE 1.8KV 110A DO203 Diode Type: Avalanche Voltage - DC Reverse (Vr) (Max): 1800V Current - Average Rectified (Io): 110A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 6mA @ 1800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-203AB Operating Temperature - Junction: -40°C ~ 180°C	封装: DO-203AB, DO-5, Stud	库存7,040	1800V	110A	1.17V @ 150A	Standard Recovery >500ns, > 200mA (Io)	-	6mA @ 1800V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB	-40°C ~ 180°C
MBRB745-E3/81	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 45V 7.5A TO263AB Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 45V Current - Average Rectified (Io): 7.5A Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100µA @ 45V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Supplier Device Package: TO-263AB Operating Temperature - Junction: -65°C ~ 150°C	封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	库存2,864	45V	7.5A	840mV @ 15A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 45V	-	Surface Mount	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB	TO-263AB	-65°C ~ 150°C
BAQ333-TR	Vishay Semiconductor Diodes Division	DIODE GEN 40V 200MA MICROMELF Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 40V Current - Average Rectified (Io): 200mA Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1nA @ 15V Capacitance @ Vr, F: 3pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: MicroMELF Operating Temperature - Junction: 175°C (Max)	封装: 2-SMD, No Lead	库存49,542	40V	200mA	1V @ 100mA	Small Signal =< 200mA (Io), Any Speed	-	1nA @ 15V	3pF @ 0V, 1MHz	Surface Mount	2-SMD, No Lead	MicroMELF	175°C (Max)
1N4148WS-E3-08	Vishay Semiconductor Diodes Division	DIODE GEN PURP 75V 150MA SOD323 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 75V Current - Average Rectified (Io): 150mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 100µA @ 100V Capacitance @ Vr, F: 4pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-76, SOD-323	库存5,059,512	75V	150mA	1.2V @ 100mA	Small Signal =< 200mA (Io), Any Speed	4ns	100µA @ 100V	4pF @ 0V, 1MHz	Surface Mount	SC-76, SOD-323	SOD-323	-55°C ~ 150°C
BAS16WT1G	ON Semiconductor	DIODE GEN PURP 100V 200MA SC70-3 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 200mA (DC) Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 6ns Current - Reverse Leakage @ Vr: 1µA @ 75V Capacitance @ Vr, F: 2pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70-3 (SOT323) Operating Temperature - Junction: -55°C ~ 150°C	封装: SC-70, SOT-323	库存1,912,920	100V	200mA (DC)	1.25V @ 150mA	Small Signal =< 200mA (Io), Any Speed	6ns	1µA @ 75V	2pF @ 0V, 1MHz	Surface Mount	SC-70, SOT-323	SC-70-3 (SOT323)	-55°C ~ 150°C
SS220F-HF	Comchip Technology	DIODE SCHOTTKY 200V 2A SMAF Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 300 µA @ 200 V Capacitance @ Vr, F: 80pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMAF Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	300 µA @ 200 V	80pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMAF	-55°C ~ 150°C
1N5802URS-TR	Microchip Technology	UFR,FRR Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 25 ns Current - Reverse Leakage @ Vr: 1 µA @ 50 V Capacitance @ Vr, F: 25pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SQ-MELF, A Supplier Device Package: A, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 50 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	A, SQ-MELF	-65°C ~ 175°C
NTE6010	NTE Electronics, Inc	DIODE GEN PURP 600V 40A DO5 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 40A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 400 ns Current - Reverse Leakage @ Vr: 50 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AA, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -65°C ~ 160°C	封装: -	Request a Quote	600 V	40A	1.4 V @ 40 A	Fast Recovery =< 500ns, > 200mA (Io)	400 ns	50 µA @ 600 V	-	Stud Mount	DO-203AA, DO-5, Stud	DO-5	-65°C ~ 160°C
MER2DMB_R2_00601	Panjit International Inc.	DIODE GEN PURP 200V 2A SMB Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 1 µA @ 200 V Capacitance @ Vr, F: 25pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: SMB (DO-214AA) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存17,850	200 V	2A	950 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	1 µA @ 200 V	25pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	SMB (DO-214AA)	-55°C ~ 175°C
W6360EC600	IXYS	DIODE GEN PURP 6KV 6395A W111 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 6000 V Current - Average Rectified (Io): 6395A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 73 µs Current - Reverse Leakage @ Vr: 120 mA @ 6000 V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: W111 Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	6000 V	6395A	1.4 V @ 4000 A	Standard Recovery >500ns, > 200mA (Io)	73 µs	120 mA @ 6000 V	-	Chassis Mount	DO-200AE	W111	-40°C ~ 150°C
PE4DCH	Taiwan Semiconductor Corporation	20NS, 4A, 200V, ULTRA FAST RECOV Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 4A Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Current - Reverse Leakage @ Vr: 2 µA @ 200 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存6,588	200 V	4A	930 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	20 ns	2 µA @ 200 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 175°C
JANTXV1N3909AR	Microchip Technology	DIODE GEN PURP 50V 50A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 50A Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 150 ns Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 (DO-203AB) Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	50 V	50A	1.4 V @ 50 A	Fast Recovery =< 500ns, > 200mA (Io)	150 ns	-	-	Stud Mount	DO-203AB, DO-5, Stud	DO-5 (DO-203AB)	-65°C ~ 150°C
UJ3D1725K2	Qorvo	DIODE SIL CARB 1.7KV 25A TO247-2 Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 1700 V Current - Average Rectified (Io): 25A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 360 µA @ 1700 V Capacitance @ Vr, F: 1500pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-247-2 Supplier Device Package: TO-247-2 Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存15,399	1700 V	25A	1.7 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	360 µA @ 1700 V	1500pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
30GFA20	KYOCERA AVX	DIODE GEN PURP AXIAL Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
D2450N02TXPSA1	Infineon Technologies	DIODE GEN PURP 200V 2450A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 2450A Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 mA @ 200 V Capacitance @ Vr, F: - Mounting Type: Clamp On Package / Case: DO-200AB, B-PUK Supplier Device Package: - Operating Temperature - Junction: -40°C ~ 180°C	封装: -	Request a Quote	200 V	2450A	880 mV @ 2000 A	Standard Recovery >500ns, > 200mA (Io)	-	50 mA @ 200 V	-	Clamp On	DO-200AB, B-PUK	-	-40°C ~ 180°C
MBR510LPS-TP	Micro Commercial Co	DIODE SCHOTTKY 100V 5A TO277-3 Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 100 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 100 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277-3 Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	100 V	5A	720 mV @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	-	100 µA @ 100 V	-	Surface Mount	TO-277, 3-PowerDFN	TO-277-3	-65°C ~ 150°C
SDS065J016C3-ISATH	Luminus Devices Inc.	DIODE 650V-16A TO220-2L Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 44A Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 48 µA @ 650 V Capacitance @ Vr, F: 837pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Supplier Device Package: TO-220-2L Operating Temperature - Junction: -55°C ~ 175°C	封装: -	Request a Quote	650 V	44A	1.5 V @ 16 A	No Recovery Time > 500mA (Io)	0 ns	48 µA @ 650 V	837pF @ 0V, 1MHz	Through Hole	TO-220-2	TO-220-2L	-55°C ~ 175°C

MBRH30035RL

GeneSiC Semiconductor

DIODE SCHOTTKY 35V 300A D67

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 35V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 300A
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 3mA @ 35V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: D-67
Supplier Device Package: D-67
Operating Temperature - Junction: -55°C ~ 150°C

封装: D-67

库存3,888

35V

300A

600mV @ 300A

-

3mA @ 35V

-

Chassis Mount

D-67

-55°C ~ 150°C

8ETX06STRR

Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 8A D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 3V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 24ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: D2PAK
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,592

600V

8A

3V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

24ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

D2PAK

-65°C ~ 175°C

MMBD914-7

Diodes Incorporated

DIODE GEN PURP 75V 200MA SOT23-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-236-3, SC-59, SOT-23-3

库存52,656

75V

200mA

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

4ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

TO-236-3, SC-59, SOT-23-3

SOT-23-3

-65°C ~ 150°C

B1100B-13

Diodes Incorporated

DIODE SCHOTTKY 100V 1A SMB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 790mV @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB
Operating Temperature - Junction: -65°C ~ 150°C

封装: DO-214AA, SMB

库存3,216

100V

1A

790mV @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

80pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB

-65°C ~ 150°C

VS-20ETF10STRR-M3

Vishay Semiconductor Diodes Division

DIODE GEN PURP 1KV 20A TO263AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1000V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1.31V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400ns
Current - Reverse Leakage @ Vr: 100µA @ 1000V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,304

1000V

20A

1.31V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

400ns

100µA @ 1000V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263 (D2Pak)

-40°C ~ 150°C

VI40100GHM3/4W

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 20A TO262AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 810mV @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2Pak, TO-262AA
Supplier Device Package: TO-262AA
Operating Temperature - Junction: -40°C ~ 150°C

封装: TO-262-3 Long Leads, I2Pak, TO-262AA

库存7,392

100V

20A

810mV @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

-

500µA @ 100V

-

Through Hole

TO-262-3 Long Leads, I2Pak, TO-262AA

TO-262AA

-40°C ~ 150°C

VS-8ETH06STRLPBF

Vishay Semiconductor Diodes Division

DIODE HYPERFAST 8A 600V D2PAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 2.4V @ 8A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存4,448

600V

8A

2.4V @ 8A

Fast Recovery =< 500ns, > 200mA (Io)

25ns

50µA @ 600V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB (D2PAK)

-65°C ~ 175°C

MB10H100HE3_A/I

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 10A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 10A
Voltage - Forward (Vf) (Max) @ If: 770mV @ 10A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 4.5µA @ 100V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存6,288

100V

10A

770mV @ 10A

Fast Recovery =< 500ns, > 200mA (Io)

-

4.5µA @ 100V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 175°C

BYV28-050-TR

Vishay Semiconductor Diodes Division

DIODE AVALANCHE 50V 3.5A SOD64

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 50V
Current - Average Rectified (Io): 3.5A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30ns
Current - Reverse Leakage @ Vr: 1µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-64, Axial

库存7,264

50V

3.5A

1.1V @ 5A

Fast Recovery =< 500ns, > 200mA (Io)

30ns

1µA @ 50V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

SF5407-TR

Vishay Semiconductor Diodes Division

DIODE AVAL 3A 800V SOD-64

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: SOD-64, Axial
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C

封装: SOD-64, Axial

库存7,456

800V

3A

1.7V @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

-

Through Hole

SOD-64, Axial

SOD-64

-55°C ~ 175°C

SF42G A0G

TSC America Inc.

DIODE, SUPER FAST, 4A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 1V @ 4A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 100pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-201AD, Axial
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-201AD, Axial

库存4,304

100V

4A

1V @ 4A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

5µA @ 100V

100pF @ 4V, 1MHz

Through Hole

DO-201AD, Axial

DO-201AD

-55°C ~ 150°C

EGL41B/1

Vishay Semiconductor Diodes Division

DIODE GEN PURP 100V 1A DO213AB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 5µA @ 100V
Capacitance @ Vr, F: 20pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF (Glass)
Supplier Device Package: DO-213AB
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-213AB, MELF (Glass)

库存3,504

100V

1A

1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

5µA @ 100V

20pF @ 4V, 1MHz

Surface Mount

DO-213AB, MELF (Glass)

DO-213AB

-65°C ~ 175°C

SS24M RSG

TSC America Inc.

DIODE, SCHOTTKY, STANDARD, 2A, 4

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 2A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 150µA @ 40V
Capacitance @ Vr, F: 35pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: Micro SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: 2-SMD, Flat Lead

库存180,000

40V

2A

600mV @ 2A

Fast Recovery =< 500ns, > 200mA (Io)

-

150µA @ 40V

35pF @ 4V, 1MHz

Surface Mount

2-SMD, Flat Lead

Micro SMA

-55°C ~ 150°C

DSA75-18B

IXYS

DIODE AVALANCHE 1.8KV 110A DO203

Diode Type: Avalanche
Voltage - DC Reverse (Vr) (Max): 1800V
Current - Average Rectified (Io): 110A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 150A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 6mA @ 1800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-203AB
Operating Temperature - Junction: -40°C ~ 180°C

封装: DO-203AB, DO-5, Stud

库存7,040

1800V

110A

1.17V @ 150A

Standard Recovery >500ns, > 200mA (Io)

-

6mA @ 1800V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-203AB

-40°C ~ 180°C

MBRB745-E3/81

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 45V 7.5A TO263AB

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 45V
Current - Average Rectified (Io): 7.5A
Voltage - Forward (Vf) (Max) @ If: 840mV @ 15A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100µA @ 45V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263AB
Operating Temperature - Junction: -65°C ~ 150°C

封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

库存2,864

45V

7.5A

840mV @ 15A

Fast Recovery =< 500ns, > 200mA (Io)

-

100µA @ 45V

-

Surface Mount

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

TO-263AB

-65°C ~ 150°C

BAQ333-TR

Vishay Semiconductor Diodes Division

DIODE GEN 40V 200MA MICROMELF

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 40V
Current - Average Rectified (Io): 200mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1nA @ 15V
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, No Lead
Supplier Device Package: MicroMELF
Operating Temperature - Junction: 175°C (Max)

封装: 2-SMD, No Lead

库存49,542

40V

200mA

1V @ 100mA

Small Signal =< 200mA (Io), Any Speed

-

1nA @ 15V

3pF @ 0V, 1MHz

Surface Mount

2-SMD, No Lead

MicroMELF

175°C (Max)

1N4148WS-E3-08

Vishay Semiconductor Diodes Division

DIODE GEN PURP 75V 150MA SOD323

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 75V
Current - Average Rectified (Io): 150mA
Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4ns
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-76, SOD-323

库存5,059,512

75V

150mA

1.2V @ 100mA

Small Signal =< 200mA (Io), Any Speed

4ns

100µA @ 100V

4pF @ 0V, 1MHz

Surface Mount

SC-76, SOD-323

SOD-323

-55°C ~ 150°C

BAS16WT1G

ON Semiconductor

DIODE GEN PURP 100V 200MA SC70-3

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 200mA (DC)
Voltage - Forward (Vf) (Max) @ If: 1.25V @ 150mA
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 6ns
Current - Reverse Leakage @ Vr: 1µA @ 75V
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -55°C ~ 150°C

封装: SC-70, SOT-323

库存1,912,920

100V

200mA (DC)

1.25V @ 150mA

Small Signal =< 200mA (Io), Any Speed

6ns

1µA @ 75V

2pF @ 0V, 1MHz

Surface Mount

SC-70, SOT-323

SC-70-3 (SOT323)

-55°C ~ 150°C

SS220F-HF

Comchip Technology

DIODE SCHOTTKY 200V 2A SMAF

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 300 µA @ 200 V
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMAF
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

300 µA @ 200 V

80pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMAF

-55°C ~ 150°C

1N5802URS-TR

Microchip Technology

UFR,FRR

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Supplier Device Package: A, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

1A

875 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

25 ns

1 µA @ 50 V

25pF @ 10V, 1MHz

Surface Mount

SQ-MELF, A

A, SQ-MELF

-65°C ~ 175°C

NTE6010

NTE Electronics, Inc

DIODE GEN PURP 600V 40A DO5

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 40A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 40 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Current - Reverse Leakage @ Vr: 50 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AA, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -65°C ~ 160°C

封装: -

Request a Quote

600 V

40A

1.4 V @ 40 A

Fast Recovery =< 500ns, > 200mA (Io)

400 ns

50 µA @ 600 V

-

Stud Mount

DO-203AA, DO-5, Stud

DO-5

-65°C ~ 160°C

MER2DMB_R2_00601

Panjit International Inc.

DIODE GEN PURP 200V 2A SMB

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: SMB (DO-214AA)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存17,850

200 V

2A

950 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

1 µA @ 200 V

25pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

SMB (DO-214AA)

-55°C ~ 175°C

W6360EC600

IXYS

DIODE GEN PURP 6KV 6395A W111

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 6000 V
Current - Average Rectified (Io): 6395A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 4000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 73 µs
Current - Reverse Leakage @ Vr: 120 mA @ 6000 V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: W111
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

6000 V

6395A

1.4 V @ 4000 A

Standard Recovery >500ns, > 200mA (Io)

73 µs

120 mA @ 6000 V

-

Chassis Mount

DO-200AE

W111

-40°C ~ 150°C

PE4DCH

Taiwan Semiconductor Corporation

20NS, 4A, 200V, ULTRA FAST RECOV

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 4A
Voltage - Forward (Vf) (Max) @ If: 930 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存6,588

200 V

4A

930 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

20 ns

2 µA @ 200 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 175°C

JANTXV1N3909AR

Microchip Technology

DIODE GEN PURP 50V 50A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 50A
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 50 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 150 ns
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5 (DO-203AB)
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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50 V

50A

1.4 V @ 50 A

Fast Recovery =< 500ns, > 200mA (Io)

150 ns

-

Stud Mount

DO-203AB, DO-5, Stud

DO-5 (DO-203AB)

-65°C ~ 150°C

UJ3D1725K2

Qorvo

DIODE SIL CARB 1.7KV 25A TO247-2

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 1700 V
Current - Average Rectified (Io): 25A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 25 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 360 µA @ 1700 V
Capacitance @ Vr, F: 1500pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-247-2
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存15,399

1700 V

25A

1.7 V @ 25 A

No Recovery Time > 500mA (Io)

0 ns

360 µA @ 1700 V

1500pF @ 1V, 1MHz

Through Hole

TO-247-2

-55°C ~ 175°C

30GFA20

KYOCERA AVX

DIODE GEN PURP AXIAL

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

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-

D2450N02TXPSA1

Infineon Technologies

DIODE GEN PURP 200V 2450A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 2450A
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2000 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 mA @ 200 V
Capacitance @ Vr, F: -
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Supplier Device Package: -
Operating Temperature - Junction: -40°C ~ 180°C

封装: -

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200 V

2450A

880 mV @ 2000 A

Standard Recovery >500ns, > 200mA (Io)

-

50 mA @ 200 V

-

Clamp On

DO-200AB, B-PUK

-

-40°C ~ 180°C

MBR510LPS-TP

Micro Commercial Co

DIODE SCHOTTKY 100V 5A TO277-3

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 720 mV @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

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100 V

5A

720 mV @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

-

100 µA @ 100 V

-

Surface Mount

TO-277, 3-PowerDFN

TO-277-3

-65°C ~ 150°C

SDS065J016C3-ISATH

Luminus Devices Inc.

DIODE 650V-16A TO220-2L

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 44A
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 16 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 48 µA @ 650 V
Capacitance @ Vr, F: 837pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2
Supplier Device Package: TO-220-2L
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

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650 V

44A

1.5 V @ 16 A

No Recovery Time > 500mA (Io)

0 ns

48 µA @ 650 V

837pF @ 0V, 1MHz

Through Hole

TO-220-2

TO-220-2L

-55°C ~ 175°C