页 1490 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
GUR460-E3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28V @ 4A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 60ns
  • Current - Reverse Leakage @ Vr: 10µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -
封装: DO-201AD, Axial
库存3,920
600V
4A
1.28V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
60ns
10µA @ 600V
-
Through Hole
DO-201AD, Axial
DO-201AD
-
STTH2R02Q
STMicroelectronics

DIODE GEN PURP 200V 2A DO15

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 3µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: 175°C (Max)
封装: DO-204AC, DO-15, Axial
库存6,480
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
3µA @ 200V
-
Through Hole
DO-204AC, DO-15, Axial
DO-15
175°C (Max)
SR502-T
Diodes Incorporated

DIODE SCHOTTKY 20V 5A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 20V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1mA @ 20V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-201AD, Axial
库存3,552
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
1mA @ 20V
-
Through Hole
DO-201AD, Axial
DO-201AD
-65°C ~ 150°C
RBK86225XX
Powerex Inc.

DIODE DISC RBK 2500A 6200V

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存3,552
-
-
-
-
-
-
-
-
-
-
-
1N3291A
Powerex Inc.

DIODE GEN PURP 400V 100A DO205AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 100A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 100A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 24mA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis, Stud Mount
  • Package / Case: DO-205AA, DO-8, Stud
  • Supplier Device Package: DO-205AA (DO-8)
  • Operating Temperature - Junction: -40°C ~ 200°C
封装: DO-205AA, DO-8, Stud
库存6,320
400V
100A
1.5V @ 100A
Standard Recovery >500ns, > 200mA (Io)
-
24mA @ 400V
-
Chassis, Stud Mount
DO-205AA, DO-8, Stud
DO-205AA (DO-8)
-40°C ~ 200°C
JANTXV1N5417US
Microsemi Corporation

DIODE GEN PURP 200V 3A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.5V @ 9A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 150ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, B
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: SQ-MELF, B
库存2,912
200V
3A
1.5V @ 9A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
1µA @ 200V
-
Surface Mount
SQ-MELF, B
D-5B
-65°C ~ 175°C
LXA08B600
Power Integrations

DIODE SCHOTTKY 600V 8A TO263AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 2.94V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 34ns
  • Current - Reverse Leakage @ Vr: 250µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: TO-263AB
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存4,784
600V
8A
2.94V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
34ns
250µA @ 600V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
TO-263AB
150°C (Max)
NRVB30H100MFST3G
ON Semiconductor

DIODE SCHOTTKY 100V 30A 5DFN

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 30A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: 8-PowerTDFN, 5 Leads
  • Supplier Device Package: 5-DFN (5x6) (8-SOFL)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: 8-PowerTDFN, 5 Leads
库存5,840
100V
30A
900mV @ 30A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 100V
-
Surface Mount
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
-55°C ~ 150°C
STTH1R02ZFY
STMicroelectronics

AUTOMOTIVE ULTRAFAST RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 32ns
  • Current - Reverse Leakage @ Vr: 500nA @ 200V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123F
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: SOD-123F
库存2,320
200V
1A
1V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
32ns
500nA @ 200V
-
Surface Mount
SOD-123F
SOD-123F
-40°C ~ 175°C
ES1BLHMHG
TSC America Inc.

DIODE, SUPER FAST, 1A, 100V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 100V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-219AB
库存4,432
100V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
CDBFR42
Comchip Technology

DIODE SCHOTTKY 30V 200MA 1005

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 200mA
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 5ns
  • Current - Reverse Leakage @ Vr: 500nA @ 25V
  • Capacitance @ Vr, F: 10pF @ 1V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: 1005 (2512 Metric)
  • Supplier Device Package: 1005/SOD-323F
  • Operating Temperature - Junction: 125°C (Max)
封装: 1005 (2512 Metric)
库存2,672
30V
200mA
1V @ 200mA
Small Signal =< 200mA (Io), Any Speed
5ns
500nA @ 25V
10pF @ 1V, 1MHz
Surface Mount
1005 (2512 Metric)
1005/SOD-323F
125°C (Max)
1N5391GHB0G
TSC America Inc.

DIODE, 1.5A, 50V, AEC-Q101, DO-1

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50V
  • Current - Average Rectified (Io): 1.5A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1.5A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5µA @ 50V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-204AC (DO-15)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AC, DO-15, Axial
库存4,912
50V
1.5A
1.1V @ 1.5A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 50V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S1JL RFG
TSC America Inc.

DIODE, 1A, 600V, SUB SMA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.8µs
  • Current - Reverse Leakage @ Vr: 5µA @ 600V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-219AB
库存2,400
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
MBRB4030G
ON Semiconductor

DIODE SCHOTTKY 30V 40A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 30V
  • Current - Average Rectified (Io): 40A
  • Voltage - Forward (Vf) (Max) @ If: 550mV @ 40A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 350µA @ 30V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存15,996
30V
40A
550mV @ 40A
Fast Recovery =< 500ns, > 200mA (Io)
-
350µA @ 30V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-65°C ~ 175°C
hot ES3C-E3/57T
Vishay Semiconductor Diodes Division

DIODE GEN PURP 150V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 10µA @ 150V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB, (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-214AB, SMC
库存1,620,000
150V
3A
900mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB, (SMC)
-55°C ~ 150°C
SS16-AU_R1_000A1
Panjit International Inc.

DIODE SCHOTTKY 60V 1A SMA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 60 V
  • Capacitance @ Vr, F: 50pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: SMA (DO-214AC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存5,400
60 V
1A
700 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 60 V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
SMA (DO-214AC)
-55°C ~ 150°C
DSS24
SMC Diode Solutions

40V, 2A, SO-D-123FL, DIODE SCHO

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 550 mV @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 40 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123F
  • Supplier Device Package: SOD-123FL
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存8,700
40 V
2A
550 mV @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 40 V
80pF @ 4V, 1MHz
Surface Mount
SOD-123F
SOD-123FL
-55°C ~ 150°C
PAD50-TO-72-3L
Linear Integrated Systems, Inc.

DIODE GEN PURP 45V 50MA TO72-3

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 50mA
  • Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 pA @ 20 V
  • Capacitance @ Vr, F: 1.5pF @ 5V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-72-3 Metal Can
  • Supplier Device Package: TO-72-3
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存1,458
45 V
50mA
1.5 V @ 5 mA
Small Signal =< 200mA (Io), Any Speed
-
50 pA @ 20 V
1.5pF @ 5V, 1MHz
Through Hole
TO-72-3 Metal Can
TO-72-3
-55°C ~ 150°C
S2JHE3-LTP
Micro Commercial Co

DIODE GEN PURP 600V 2A DO214AA

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: -
库存8,925
600 V
2A
1.15 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 600 V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 150°C
MUR440H
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 4A DO201AD

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 4A
  • Voltage - Forward (Vf) (Max) @ If: 1.28 V @ 4 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 65pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: -
库存7,500
400 V
4A
1.28 V @ 4 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 400 V
65pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 175°C
V8P45HM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 8A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 600 µA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
Request a Quote
45 V
8A
580 mV @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
-
600 µA @ 45 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
NRVTS8100MFST3G
onsemi

MODULE

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
Request a Quote
-
-
-
-
-
-
-
-
-
-
-
R50410
Microchip Technology

DIODE GP REV 100V 300A DO205AB

  • Diode Type: Standard, Reverse Polarity
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 300A
  • Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1000 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 75 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-205AB, DO-9, Stud
  • Supplier Device Package: DO-205AB (DO-9)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
Request a Quote
100 V
300A
1.25 V @ 1000 A
Standard Recovery >500ns, > 200mA (Io)
-
75 µA @ 100 V
-
Stud Mount
DO-205AB, DO-9, Stud
DO-205AB (DO-9)
-65°C ~ 200°C
HERAF805G
Taiwan Semiconductor Corporation

DIODE GEN PURP 400V 8A ITO220AC

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 8 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 400 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: ITO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存3,000
400 V
8A
1.3 V @ 8 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 400 V
80pF @ 4V, 1MHz
Through Hole
TO-220-2 Full Pack
ITO-220AC
-55°C ~ 150°C
36DN30ELEMENTEVXPSA1
Infineon Technologies

DIODE GENERAL PURPOSE E-EUPEC-0

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
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MBRAD10100H
Taiwan Semiconductor Corporation

10A, 100V, SCHOTTKY RECTIFIER

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 10A
  • Voltage - Forward (Vf) (Max) @ If: 830 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 260pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
  • Supplier Device Package: ThinDPAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存13,500
100 V
10A
830 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 100 V
260pF @ 4V, 1MHz
Surface Mount
TO-252-3, DPAK (2 Leads + Tab), SC-63
ThinDPAK
-55°C ~ 150°C
1N1341C
Microchip Technology

STANDARD RECTIFIER

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 16A
  • Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 30 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Stud Mount
  • Package / Case: DO-203AA, DO-4, Stud
  • Supplier Device Package: DO-4 (DO-203AA)
  • Operating Temperature - Junction: -65°C ~ 200°C
封装: -
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50 V
16A
1.3 V @ 30 A
Standard Recovery >500ns, > 200mA (Io)
-
10 µA @ 50 V
-
Stud Mount
DO-203AA, DO-4, Stud
DO-4 (DO-203AA)
-65°C ~ 200°C
V15P45HM3_A-H
Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 45V 15A TO277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 45 V
  • Current - Average Rectified (Io): 15A
  • Voltage - Forward (Vf) (Max) @ If: 580 mV @ 15 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 1.5 mA @ 45 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: -
库存2,199
45 V
15A
580 mV @ 15 A
Fast Recovery =< 500ns, > 200mA (Io)
-
1.5 mA @ 45 V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-40°C ~ 150°C
HS2KH
Taiwan Semiconductor Corporation

75NS, 2A, 800V, HIGH EFFICIENT R

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 2 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 30pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存18,000
800 V
2A
1.7 V @ 2 A
Fast Recovery =< 500ns, > 200mA (Io)
75 ns
5 µA @ 800 V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK810C
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 100V 8A DO214AB

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 500 µA @ 100 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存8,340
100 V
8A
-
Fast Recovery =< 500ns, > 200mA (Io)
-
500 µA @ 100 V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C