页 1428 - 二极管 - 整流器 - 单 | 分立半导体产品

零件编号	制造商	描述	封装	库存	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
JAN1N645-1	Microsemi Corporation	DIODE GEN PURP 225V 400MA DO35 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 225V Current - Average Rectified (Io): 400mA Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50nA @ 225V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Supplier Device Package: DO-35 Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AH, DO-35, Axial	库存6,864	225V	400mA	1V @ 400mA	Standard Recovery >500ns, > 200mA (Io)	-	50nA @ 225V	-	Through Hole	DO-204AH, DO-35, Axial	DO-35	-65°C ~ 175°C
SE40PGHM3/86A	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 2.4A TO277A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 2.4A (DC) Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2.2µs Current - Reverse Leakage @ Vr: 10µA @ 400V Capacitance @ Vr, F: 28pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Supplier Device Package: TO-277A (SMPC) Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-277, 3-PowerDFN	库存4,944	400V	2.4A (DC)	920mV @ 2A	Standard Recovery >500ns, > 200mA (Io)	2.2µs	10µA @ 400V	28pF @ 4V, 1MHz	Surface Mount	TO-277, 3-PowerDFN	TO-277A (SMPC)	-55°C ~ 175°C
SK35/TR13	Microsemi Corporation	DIODE SCHOTTKY 3A 50V SMCJ Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	库存4,176	-	-	-	-	-	-	-	-	-	-	-
65PQ015	Vishay Semiconductor Diodes Division	DIODE SCHOTTKY 15V 65A TO247AC Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 15V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 500mV @ 65A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 18mA @ 15V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: TO-247AC Operating Temperature - Junction: -55°C ~ 125°C	封装: TO-247-3	库存18,300	15V	65A	500mV @ 65A	Fast Recovery =< 500ns, > 200mA (Io)	-	18mA @ 15V	-	Through Hole	TO-247-3	TO-247AC	-55°C ~ 125°C
RBK83240XX	Powerex Inc.	DIODE MODULE 3.2KV 4000A DO200AE Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 3200V Current - Average Rectified (Io): 4000A Voltage - Forward (Vf) (Max) @ If: 1.17V @ 3000A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 30µs Current - Reverse Leakage @ Vr: 150mA @ 3200V Capacitance @ Vr, F: - Mounting Type: Chassis Mount Package / Case: DO-200AE Supplier Device Package: - Operating Temperature - Junction: -	封装: DO-200AE	库存7,504	3200V	4000A	1.17V @ 3000A	Standard Recovery >500ns, > 200mA (Io)	30µs	150mA @ 3200V	-	Chassis Mount	DO-200AE	-	-
VS-SD600N28PC	Vishay Semiconductor Diodes Division	DIODE GEN PURP 2.8KV 600A B8 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 2800V Current - Average Rectified (Io): 600A Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 35mA @ 2800V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: B-8 Supplier Device Package: B-8 Operating Temperature - Junction: -40°C ~ 150°C	封装: B-8	库存3,296	2800V	600A	1.44V @ 1500A	Standard Recovery >500ns, > 200mA (Io)	-	35mA @ 2800V	-	Chassis, Stud Mount	B-8	B-8	-40°C ~ 150°C
FR20JR02	GeneSiC Semiconductor	DIODE GEN PURP REV 600V 20A DO5 Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 20A Voltage - Forward (Vf) (Max) @ If: 1V @ 20A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 25µA @ 50V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AB, DO-5, Stud Supplier Device Package: DO-5 Operating Temperature - Junction: -40°C ~ 125°C	封装: DO-203AB, DO-5, Stud	库存2,464	600V	20A	1V @ 20A	Fast Recovery =< 500ns, > 200mA (Io)	250ns	25µA @ 50V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-5	-40°C ~ 125°C
UFS130JE3/TR13	Microsemi Corporation	DIODE GEN PURP 300V 1A DO214BA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 300V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 10µA @ 300V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214BA Operating Temperature - Junction: -55°C ~ 175°C	封装: DO-214AA, SMB	库存3,648	300V	1A	1.1V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	10µA @ 300V	-	Surface Mount	DO-214AA, SMB	DO-214BA	-55°C ~ 175°C
SBR3U60P5-13D	Diodes Incorporated	DIODE SBR 60V 3A PDI5 Diode Type: Super Barrier Voltage - DC Reverse (Vr) (Max): 60V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 60µA @ 60V Capacitance @ Vr, F: 110pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: PowerDI? 5 Supplier Device Package: PowerDI? 5 Operating Temperature - Junction: -55°C ~ 175°C	封装: PowerDI? 5	库存4,784	60V	3A	600mV @ 3A	Standard Recovery >500ns, > 200mA (Io)	-	60µA @ 60V	110pF @ 4V, 1MHz	Surface Mount	PowerDI? 5	PowerDI? 5	-55°C ~ 175°C
RS2K-E3/5BT	Vishay Semiconductor Diodes Division	DIODE GEN PURP 800V 1.5A DO214AA Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AA, SMB Supplier Device Package: DO-214AA (SMB) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AA, SMB	库存3,088	800V	1.5A	1.3V @ 1.5A	Fast Recovery =< 500ns, > 200mA (Io)	500ns	5µA @ 800V	17pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
ES3BHM6G	TSC America Inc.	DIODE, SUPER FAST, 3A, 100V, 35N Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 100V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35ns Current - Reverse Leakage @ Vr: 10µA @ 100V Capacitance @ Vr, F: 45pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB, (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-214AB, SMC	库存6,400	100V	3A	950mV @ 3A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	10µA @ 100V	45pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB, (SMC)	-55°C ~ 150°C
UF1K B0G	TSC America Inc.	DIODE, HIGH EFFICIENT, 1A, 800V, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 800V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75ns Current - Reverse Leakage @ Vr: 5µA @ 800V Capacitance @ Vr, F: 17pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存4,992	800V	1A	1.7V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 800V	17pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-55°C ~ 150°C
GP08G-E3/54	Vishay Semiconductor Diodes Division	DIODE GEN PURP 400V 800MA DO204 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2µs Current - Reverse Leakage @ Vr: 5µA @ 400V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-204AL (DO-41) Operating Temperature - Junction: -65°C ~ 175°C	封装: DO-204AL, DO-41, Axial	库存2,048	400V	800mA	1.3V @ 800mA	Standard Recovery >500ns, > 200mA (Io)	2µs	5µA @ 400V	-	Through Hole	DO-204AL, DO-41, Axial	DO-204AL (DO-41)	-65°C ~ 175°C
RS1JL RQG	TSC America Inc.	DIODE, FAST, 0.8A, 600V, 250NS, Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250ns Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 10pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-219AB Supplier Device Package: Sub SMA Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-219AB	库存4,752	600V	800mA	1.3V @ 800mA	Fast Recovery =< 500ns, > 200mA (Io)	250ns	5µA @ 600V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
1N4005T-G	Comchip Technology	DIODE GEN PURP 600V 1A DO41 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 5µA @ 600V Capacitance @ Vr, F: 15pF @ 4V, 1MHz Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 150°C	封装: DO-204AL, DO-41, Axial	库存5,920	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	15pF @ 4V, 1MHz	Through Hole	DO-204AL, DO-41, Axial	DO-41	-55°C ~ 150°C
VS-300UR60A	Vishay Semiconductor Diodes Division	DIODE GEN REV 600V 300A DO205AB Diode Type: Standard, Reverse Polarity Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 300A Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 40mA @ 600V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-205AB, DO-9, Stud Supplier Device Package: DO-205AB, DO-9 Operating Temperature - Junction: -65°C ~ 200°C	封装: DO-205AB, DO-9, Stud	库存6,180	600V	300A	1.4V @ 942A	Standard Recovery >500ns, > 200mA (Io)	-	40mA @ 600V	-	Chassis, Stud Mount	DO-205AB, DO-9, Stud	DO-205AB, DO-9	-65°C ~ 200°C
C3D04060F	Cree/Wolfspeed	DIODE SCHOTTKY 600V 4A TO220-F2 Diode Type: Silicon Carbide Schottky Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io): 4A (DC) Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0ns Current - Reverse Leakage @ Vr: 50µA @ 600V Capacitance @ Vr, F: 251pF @ 0V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220-F2 Operating Temperature - Junction: -55°C ~ 175°C	封装: TO-220-2 Full Pack, Isolated Tab	库存28,830	600V	4A (DC)	1.7V @ 4A	No Recovery Time > 500mA (Io)	0ns	50µA @ 600V	251pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220-F2	-55°C ~ 175°C
SBR3050	Microchip Technology	DIODE SCHOTTKY 50V 30A DO203AA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 30A Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V Capacitance @ Vr, F: - Mounting Type: Chassis, Stud Mount Package / Case: DO-203AA, DO-4, Stud Supplier Device Package: DO-203AA Operating Temperature - Junction: -	封装: -	Request a Quote	50 V	30A	630 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1.5 mA @ 50 V	-	Chassis, Stud Mount	DO-203AA, DO-4, Stud	DO-203AA	-
S8G-E3-H	Vishay	8A, 400V, STD RECT, SMC Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400 V Current - Average Rectified (Io): 1.6A Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.6 µs Current - Reverse Leakage @ Vr: 10 µA @ 400 V Capacitance @ Vr, F: 72pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: DO-214AB (SMC) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	400 V	1.6A	975 mV @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	3.6 µs	10 µA @ 400 V	72pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	DO-214AB (SMC)	-55°C ~ 150°C
MURD560S-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 5A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: TO-252 (DPAK) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	600 V	5A	1.7 V @ 5 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	TO-252 (DPAK)	-55°C ~ 150°C
JANTX1N6768	Microchip Technology	DIODE GEN PURP 50V 8A TO257 Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 8A Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 10 µA @ 40 V Capacitance @ Vr, F: 150pF @ 5V, 1MHz Mounting Type: Through Hole Package / Case: TO-257-3 Supplier Device Package: TO-257 Operating Temperature - Junction: -	封装: -	Request a Quote	50 V	8A	1.06 V @ 8 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	10 µA @ 40 V	150pF @ 5V, 1MHz	Through Hole	TO-257-3	TO-257	-
VS-6EVL06-M3-I	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 600V 6A SLIMDPAK Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 5 µA @ 600 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63 Supplier Device Package: SlimDPAK Operating Temperature - Junction: -55°C ~ 175°C	封装: -	库存8,703	600 V	6A	1.35 V @ 6 A	Fast Recovery =< 500ns, > 200mA (Io)	50 ns	5 µA @ 600 V	-	Surface Mount	TO-252-3, DPAK (2 Leads + Tab), SC-63	SlimDPAK	-55°C ~ 175°C
VS-65APS16LHM3	Vishay General Semiconductor - Diodes Division	DIODE GEN PURP 1.6KV 65A TO247AD Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 1600 V Current - Average Rectified (Io): 65A Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 65 A Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 100 µA @ 1600 V Capacitance @ Vr, F: - Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -40°C ~ 150°C	封装: -	Request a Quote	1600 V	65A	1.17 V @ 65 A	Standard Recovery >500ns, > 200mA (Io)	-	100 µA @ 1600 V	-	Through Hole	TO-3P-3, SC-65-3	TO-247AD (TO-3P)	-40°C ~ 150°C
S30780	Microchip Technology	STD RECTIFIER Diode Type: - Voltage - DC Reverse (Vr) (Max): - Current - Average Rectified (Io): - Voltage - Forward (Vf) (Max) @ If: - Speed: - Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: - Capacitance @ Vr, F: - Mounting Type: - Package / Case: - Supplier Device Package: - Operating Temperature - Junction: -	封装: -	Request a Quote	-	-	-	-	-	-	-	-	-	-	-
1N5807-TR	Microchip Technology	DIODE GEN PURP 50V 3A Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 50 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Current - Reverse Leakage @ Vr: 5 µA @ 50 V Capacitance @ Vr, F: 60pF @ 10V, 1MHz Mounting Type: Through Hole Package / Case: B, Axial Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C	封装: -	Request a Quote	50 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 50 V	60pF @ 10V, 1MHz	Through Hole	B, Axial	B, Axial	-65°C ~ 175°C
PMEG60T10ELXD-QX	Nexperia USA Inc.	DIODE SCHOTTKY 60V 1A SOD323HP Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 1A Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 7 ns Current - Reverse Leakage @ Vr: 400 nA @ 60 V Capacitance @ Vr, F: 155pF @ 1V, 1MHz Mounting Type: Surface Mount Package / Case: 2-SMD, Flat Lead Supplier Device Package: SOD323HP Operating Temperature - Junction: 175°C	封装: -	库存13,500	60 V	1A	640 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	7 ns	400 nA @ 60 V	155pF @ 1V, 1MHz	Surface Mount	2-SMD, Flat Lead	SOD323HP	175°C
SBA0540Q-AU_R1_000A1	Panjit International Inc.	DIODE SCHOTTKY 40V 500MA 2DFN Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 40 V Current - Average Rectified (Io): 500mA Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 50 µA @ 40 V Capacitance @ Vr, F: - Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Supplier Device Package: 2-DFN (1x0.6) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	40 V	500mA	600 mV @ 500 mA	Fast Recovery =< 500ns, > 200mA (Io)	-	50 µA @ 40 V	-	Surface Mount	0402 (1006 Metric)	2-DFN (1x0.6)	-55°C ~ 150°C
ER3DHE3-TP	Micro Commercial Co	Interface Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200 V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 35 ns Current - Reverse Leakage @ Vr: 5 µA @ 200 V Capacitance @ Vr, F: 50pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AB, SMC Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C	封装: -	Request a Quote	200 V	3A	950 mV @ 3 A	Fast Recovery =< 500ns, > 200mA (Io)	35 ns	5 µA @ 200 V	50pF @ 4V, 1MHz	Surface Mount	DO-214AB, SMC	SMC (DO-214AB)	-55°C ~ 150°C
NXPSC06650X6Q	WeEn Semiconductors	DIODE SIL CARBIDE 650V 6A TO220F Diode Type: SiC (Silicon Carbide) Schottky Voltage - DC Reverse (Vr) (Max): 650 V Current - Average Rectified (Io): 6A Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Current - Reverse Leakage @ Vr: 200 µA @ 650 V Capacitance @ Vr, F: 190pF @ 1V, 1MHz Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack, Isolated Tab Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max)	封装: -	库存8,526	650 V	6A	1.7 V @ 6 A	No Recovery Time > 500mA (Io)	0 ns	200 µA @ 650 V	190pF @ 1V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	TO-220F	175°C (Max)
CMSH2-60M-BK-PBFREE	Central Semiconductor Corp	DIODE SCHOTTKY 60V 2A SMA Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 60 V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): - Current - Reverse Leakage @ Vr: 500 µA @ 60 V Capacitance @ Vr, F: 94pF @ 4V, 1MHz Mounting Type: Surface Mount Package / Case: DO-214AC, SMA Supplier Device Package: SMA Operating Temperature - Junction: -65°C ~ 150°C	封装: -	Request a Quote	60 V	2A	700 mV @ 2 A	Fast Recovery =< 500ns, > 200mA (Io)	-	500 µA @ 60 V	94pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	SMA	-65°C ~ 150°C

JAN1N645-1

Microsemi Corporation

DIODE GEN PURP 225V 400MA DO35

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 225V
Current - Average Rectified (Io): 400mA
Voltage - Forward (Vf) (Max) @ If: 1V @ 400mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50nA @ 225V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Supplier Device Package: DO-35
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AH, DO-35, Axial

库存6,864

225V

400mA

1V @ 400mA

Standard Recovery >500ns, > 200mA (Io)

-

50nA @ 225V

-

Through Hole

DO-204AH, DO-35, Axial

DO-35

-65°C ~ 175°C

SE40PGHM3/86A

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 2.4A TO277A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 2.4A (DC)
Voltage - Forward (Vf) (Max) @ If: 920mV @ 2A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.2µs
Current - Reverse Leakage @ Vr: 10µA @ 400V
Capacitance @ Vr, F: 28pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Supplier Device Package: TO-277A (SMPC)
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-277, 3-PowerDFN

库存4,944

400V

2.4A (DC)

920mV @ 2A

Standard Recovery >500ns, > 200mA (Io)

2.2µs

10µA @ 400V

28pF @ 4V, 1MHz

Surface Mount

TO-277, 3-PowerDFN

TO-277A (SMPC)

-55°C ~ 175°C

SK35/TR13

Microsemi Corporation

DIODE SCHOTTKY 3A 50V SMCJ

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

库存4,176

-

65PQ015

Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 15V 65A TO247AC

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 15V
Current - Average Rectified (Io): 65A
Voltage - Forward (Vf) (Max) @ If: 500mV @ 65A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 18mA @ 15V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247AC
Operating Temperature - Junction: -55°C ~ 125°C

封装: TO-247-3

库存18,300

15V

65A

500mV @ 65A

Fast Recovery =< 500ns, > 200mA (Io)

-

18mA @ 15V

-

Through Hole

TO-247-3

TO-247AC

-55°C ~ 125°C

RBK83240XX

Powerex Inc.

DIODE MODULE 3.2KV 4000A DO200AE

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 3200V
Current - Average Rectified (Io): 4000A
Voltage - Forward (Vf) (Max) @ If: 1.17V @ 3000A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30µs
Current - Reverse Leakage @ Vr: 150mA @ 3200V
Capacitance @ Vr, F: -
Mounting Type: Chassis Mount
Package / Case: DO-200AE
Supplier Device Package: -
Operating Temperature - Junction: -

封装: DO-200AE

库存7,504

3200V

4000A

1.17V @ 3000A

Standard Recovery >500ns, > 200mA (Io)

30µs

150mA @ 3200V

-

Chassis Mount

DO-200AE

-

VS-SD600N28PC

Vishay Semiconductor Diodes Division

DIODE GEN PURP 2.8KV 600A B8

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 2800V
Current - Average Rectified (Io): 600A
Voltage - Forward (Vf) (Max) @ If: 1.44V @ 1500A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 35mA @ 2800V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: B-8
Supplier Device Package: B-8
Operating Temperature - Junction: -40°C ~ 150°C

封装: B-8

库存3,296

2800V

600A

1.44V @ 1500A

Standard Recovery >500ns, > 200mA (Io)

-

35mA @ 2800V

-

Chassis, Stud Mount

B-8

-40°C ~ 150°C

FR20JR02

GeneSiC Semiconductor

DIODE GEN PURP REV 600V 20A DO5

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 1V @ 20A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 25µA @ 50V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AB, DO-5, Stud
Supplier Device Package: DO-5
Operating Temperature - Junction: -40°C ~ 125°C

封装: DO-203AB, DO-5, Stud

库存2,464

600V

20A

1V @ 20A

Fast Recovery =< 500ns, > 200mA (Io)

250ns

25µA @ 50V

-

Chassis, Stud Mount

DO-203AB, DO-5, Stud

DO-5

-40°C ~ 125°C

UFS130JE3/TR13

Microsemi Corporation

DIODE GEN PURP 300V 1A DO214BA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 300V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50ns
Current - Reverse Leakage @ Vr: 10µA @ 300V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -55°C ~ 175°C

封装: DO-214AA, SMB

库存3,648

300V

1A

1.1V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

50ns

10µA @ 300V

-

Surface Mount

DO-214AA, SMB

DO-214BA

-55°C ~ 175°C

SBR3U60P5-13D

Diodes Incorporated

DIODE SBR 60V 3A PDI5

Diode Type: Super Barrier
Voltage - DC Reverse (Vr) (Max): 60V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 600mV @ 3A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 60µA @ 60V
Capacitance @ Vr, F: 110pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: PowerDI? 5
Supplier Device Package: PowerDI? 5
Operating Temperature - Junction: -55°C ~ 175°C

封装: PowerDI? 5

库存4,784

60V

3A

600mV @ 3A

Standard Recovery >500ns, > 200mA (Io)

-

60µA @ 60V

110pF @ 4V, 1MHz

Surface Mount

PowerDI? 5

-55°C ~ 175°C

RS2K-E3/5BT

Vishay Semiconductor Diodes Division

DIODE GEN PURP 800V 1.5A DO214AA

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1.5A
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1.5A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AA, SMB

库存3,088

800V

1.5A

1.3V @ 1.5A

Fast Recovery =< 500ns, > 200mA (Io)

500ns

5µA @ 800V

17pF @ 4V, 1MHz

Surface Mount

DO-214AA, SMB

DO-214AA (SMB)

-55°C ~ 150°C

ES3BHM6G

TSC America Inc.

DIODE, SUPER FAST, 3A, 100V, 35N

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950mV @ 3A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35ns
Current - Reverse Leakage @ Vr: 10µA @ 100V
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB, (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-214AB, SMC

库存6,400

100V

3A

950mV @ 3A

Fast Recovery =< 500ns, > 200mA (Io)

35ns

10µA @ 100V

45pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB, (SMC)

-55°C ~ 150°C

UF1K B0G

TSC America Inc.

DIODE, HIGH EFFICIENT, 1A, 800V,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 800V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 1A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75ns
Current - Reverse Leakage @ Vr: 5µA @ 800V
Capacitance @ Vr, F: 17pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存4,992

800V

1A

1.7V @ 1A

Fast Recovery =< 500ns, > 200mA (Io)

75ns

5µA @ 800V

17pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-55°C ~ 150°C

GP08G-E3/54

Vishay Semiconductor Diodes Division

DIODE GEN PURP 400V 800MA DO204

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2µs
Current - Reverse Leakage @ Vr: 5µA @ 400V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C

封装: DO-204AL, DO-41, Axial

库存2,048

400V

800mA

1.3V @ 800mA

Standard Recovery >500ns, > 200mA (Io)

2µs

5µA @ 400V

-

Through Hole

DO-204AL, DO-41, Axial

DO-204AL (DO-41)

-65°C ~ 175°C

RS1JL RQG

TSC America Inc.

DIODE, FAST, 0.8A, 600V, 250NS,

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 800mA
Voltage - Forward (Vf) (Max) @ If: 1.3V @ 800mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250ns
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 10pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-219AB
Supplier Device Package: Sub SMA
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-219AB

库存4,752

600V

800mA

1.3V @ 800mA

Fast Recovery =< 500ns, > 200mA (Io)

250ns

5µA @ 600V

10pF @ 4V, 1MHz

Surface Mount

DO-219AB

Sub SMA

-55°C ~ 150°C

1N4005T-G

Comchip Technology

DIODE GEN PURP 600V 1A DO41

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 5µA @ 600V
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 150°C

封装: DO-204AL, DO-41, Axial

库存5,920

600V

1A

1.1V @ 1A

Standard Recovery >500ns, > 200mA (Io)

-

5µA @ 600V

15pF @ 4V, 1MHz

Through Hole

DO-204AL, DO-41, Axial

DO-41

-55°C ~ 150°C

VS-300UR60A

Vishay Semiconductor Diodes Division

DIODE GEN REV 600V 300A DO205AB

Diode Type: Standard, Reverse Polarity
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 300A
Voltage - Forward (Vf) (Max) @ If: 1.4V @ 942A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 40mA @ 600V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-205AB, DO-9, Stud
Supplier Device Package: DO-205AB, DO-9
Operating Temperature - Junction: -65°C ~ 200°C

封装: DO-205AB, DO-9, Stud

库存6,180

600V

300A

1.4V @ 942A

Standard Recovery >500ns, > 200mA (Io)

-

40mA @ 600V

-

Chassis, Stud Mount

DO-205AB, DO-9, Stud

DO-205AB, DO-9

-65°C ~ 200°C

C3D04060F

Cree/Wolfspeed

DIODE SCHOTTKY 600V 4A TO220-F2

Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 600V
Current - Average Rectified (Io): 4A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.7V @ 4A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0ns
Current - Reverse Leakage @ Vr: 50µA @ 600V
Capacitance @ Vr, F: 251pF @ 0V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220-F2
Operating Temperature - Junction: -55°C ~ 175°C

封装: TO-220-2 Full Pack, Isolated Tab

库存28,830

600V

4A (DC)

1.7V @ 4A

No Recovery Time > 500mA (Io)

0ns

50µA @ 600V

251pF @ 0V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220-F2

-55°C ~ 175°C

SBR3050

Microchip Technology

DIODE SCHOTTKY 50V 30A DO203AA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 30A
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 30 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 1.5 mA @ 50 V
Capacitance @ Vr, F: -
Mounting Type: Chassis, Stud Mount
Package / Case: DO-203AA, DO-4, Stud
Supplier Device Package: DO-203AA
Operating Temperature - Junction: -

封装: -

Request a Quote

50 V

30A

630 mV @ 30 A

Fast Recovery =< 500ns, > 200mA (Io)

-

1.5 mA @ 50 V

-

Chassis, Stud Mount

DO-203AA, DO-4, Stud

DO-203AA

-

S8G-E3-H

Vishay

8A, 400V, STD RECT, SMC

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 400 V
Current - Average Rectified (Io): 1.6A
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.6 µs
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Capacitance @ Vr, F: 72pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

400 V

1.6A

975 mV @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

3.6 µs

10 µA @ 400 V

72pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

DO-214AB (SMC)

-55°C ~ 150°C

MURD560S-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 5A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 5 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: TO-252 (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

600 V

5A

1.7 V @ 5 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

TO-252 (DPAK)

-55°C ~ 150°C

JANTX1N6768

Microchip Technology

DIODE GEN PURP 50V 8A TO257

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 8A
Voltage - Forward (Vf) (Max) @ If: 1.06 V @ 8 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Capacitance @ Vr, F: 150pF @ 5V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-257-3
Supplier Device Package: TO-257
Operating Temperature - Junction: -

封装: -

Request a Quote

50 V

8A

1.06 V @ 8 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

10 µA @ 40 V

150pF @ 5V, 1MHz

Through Hole

TO-257-3

TO-257

-

VS-6EVL06-M3-I

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 600V 6A SLIMDPAK

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 600 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.35 V @ 6 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPAK (2 Leads + Tab), SC-63
Supplier Device Package: SlimDPAK
Operating Temperature - Junction: -55°C ~ 175°C

封装: -

库存8,703

600 V

6A

1.35 V @ 6 A

Fast Recovery =< 500ns, > 200mA (Io)

50 ns

5 µA @ 600 V

-

Surface Mount

TO-252-3, DPAK (2 Leads + Tab), SC-63

SlimDPAK

-55°C ~ 175°C

VS-65APS16LHM3

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.6KV 65A TO247AD

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 1600 V
Current - Average Rectified (Io): 65A
Voltage - Forward (Vf) (Max) @ If: 1.17 V @ 65 A
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 100 µA @ 1600 V
Capacitance @ Vr, F: -
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Supplier Device Package: TO-247AD (TO-3P)
Operating Temperature - Junction: -40°C ~ 150°C

封装: -

Request a Quote

1600 V

65A

1.17 V @ 65 A

Standard Recovery >500ns, > 200mA (Io)

-

100 µA @ 1600 V

-

Through Hole

TO-3P-3, SC-65-3

TO-247AD (TO-3P)

-40°C ~ 150°C

S30780

Microchip Technology

STD RECTIFIER

Diode Type: -
Voltage - DC Reverse (Vr) (Max): -
Current - Average Rectified (Io): -
Voltage - Forward (Vf) (Max) @ If: -
Speed: -
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: -
Capacitance @ Vr, F: -
Mounting Type: -
Package / Case: -
Supplier Device Package: -
Operating Temperature - Junction: -

封装: -

Request a Quote

-

1N5807-TR

Microchip Technology

DIODE GEN PURP 50V 3A

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 50 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Current - Reverse Leakage @ Vr: 5 µA @ 50 V
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Mounting Type: Through Hole
Package / Case: B, Axial
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C

封装: -

Request a Quote

50 V

3A

875 mV @ 4 A

Fast Recovery =< 500ns, > 200mA (Io)

30 ns

5 µA @ 50 V

60pF @ 10V, 1MHz

Through Hole

B, Axial

-65°C ~ 175°C

PMEG60T10ELXD-QX

Nexperia USA Inc.

DIODE SCHOTTKY 60V 1A SOD323HP

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7 ns
Current - Reverse Leakage @ Vr: 400 nA @ 60 V
Capacitance @ Vr, F: 155pF @ 1V, 1MHz
Mounting Type: Surface Mount
Package / Case: 2-SMD, Flat Lead
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C

封装: -

库存13,500

60 V

1A

640 mV @ 1 A

Fast Recovery =< 500ns, > 200mA (Io)

7 ns

400 nA @ 60 V

155pF @ 1V, 1MHz

Surface Mount

2-SMD, Flat Lead

SOD323HP

175°C

SBA0540Q-AU_R1_000A1

Panjit International Inc.

DIODE SCHOTTKY 40V 500MA 2DFN

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 40 V
Current - Average Rectified (Io): 500mA
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 500 mA
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 50 µA @ 40 V
Capacitance @ Vr, F: -
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Supplier Device Package: 2-DFN (1x0.6)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

40 V

500mA

600 mV @ 500 mA

Fast Recovery =< 500ns, > 200mA (Io)

-

50 µA @ 40 V

-

Surface Mount

0402 (1006 Metric)

2-DFN (1x0.6)

-55°C ~ 150°C

ER3DHE3-TP

Micro Commercial Co

Interface

Diode Type: Standard
Voltage - DC Reverse (Vr) (Max): 200 V
Current - Average Rectified (Io): 3A
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Capacitance @ Vr, F: 50pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C

封装: -

Request a Quote

200 V

3A

950 mV @ 3 A

Fast Recovery =< 500ns, > 200mA (Io)

35 ns

5 µA @ 200 V

50pF @ 4V, 1MHz

Surface Mount

DO-214AB, SMC

SMC (DO-214AB)

-55°C ~ 150°C

NXPSC06650X6Q

WeEn Semiconductors

DIODE SIL CARBIDE 650V 6A TO220F

Diode Type: SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max): 650 V
Current - Average Rectified (Io): 6A
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Capacitance @ Vr, F: 190pF @ 1V, 1MHz
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack, Isolated Tab
Supplier Device Package: TO-220F
Operating Temperature - Junction: 175°C (Max)

封装: -

库存8,526

650 V

6A

1.7 V @ 6 A

No Recovery Time > 500mA (Io)

0 ns

200 µA @ 650 V

190pF @ 1V, 1MHz

Through Hole

TO-220-2 Full Pack, Isolated Tab

TO-220F

175°C (Max)

CMSH2-60M-BK-PBFREE

Central Semiconductor Corp

DIODE SCHOTTKY 60V 2A SMA

Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 60 V
Current - Average Rectified (Io): 2A
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): -
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Capacitance @ Vr, F: 94pF @ 4V, 1MHz
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Supplier Device Package: SMA
Operating Temperature - Junction: -65°C ~ 150°C

封装: -

Request a Quote

60 V

2A

700 mV @ 2 A

Fast Recovery =< 500ns, > 200mA (Io)

-

500 µA @ 60 V

94pF @ 4V, 1MHz

Surface Mount

DO-214AC, SMA

SMA

-65°C ~ 150°C