页 1425 - 二极管 - 整流器 - 单 | 分立半导体产品 | 深圳黑森尔电子
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二极管 - 整流器 - 单

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制造商
描述
封装
库存
数量
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Voltage - Forward (Vf) (Max) @ If
Speed
Reverse Recovery Time (trr)
Current - Reverse Leakage @ Vr
Capacitance @ Vr, F
Mounting Type
Package / Case
Supplier Device Package
Operating Temperature - Junction
SS5P9HM3/87A
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 5A 90V TO-277A

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 90V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 880mV @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 15µA @ 90V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-277, 3-PowerDFN
库存7,840
90V
5A
880mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
15µA @ 90V
-
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 150°C
JAN1N6627US
Microsemi Corporation

DIODE GEN PURP 440V 1.75A D5B

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 440V
  • Current - Average Rectified (Io): 1.75A
  • Voltage - Forward (Vf) (Max) @ If: 1.35V @ 1.2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 30ns
  • Current - Reverse Leakage @ Vr: 2µA @ 440V
  • Capacitance @ Vr, F: 40pF @ 10V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, E
  • Supplier Device Package: D-5B
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: SQ-MELF, E
库存2,768
440V
1.75A
1.35V @ 1.2A
Fast Recovery =< 500ns, > 200mA (Io)
30ns
2µA @ 440V
40pF @ 10V, 1MHz
Surface Mount
SQ-MELF, E
D-5B
-65°C ~ 150°C
hot SS2H10HE3/5BT
Vishay Semiconductor Diodes Division

DIODE SCHOTTKY 100V 2A DO214AA

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 2A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AA, SMB
库存38,400
100V
2A
790mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 100V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-65°C ~ 175°C
GP10YEHE3/73
Vishay Semiconductor Diodes Division

DIODE GEN PURP 1.6KV 1A DO204AL

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 3µs
  • Current - Reverse Leakage @ Vr: 5µA @ 1600V
  • Capacitance @ Vr, F: 5pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -65°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存3,616
1600V
1A
1.3V @ 1A
Standard Recovery >500ns, > 200mA (Io)
3µs
5µA @ 1600V
5pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-65°C ~ 150°C
R9G01612XX
Powerex Inc.

DIODE MODULE 1.6KV 1200A DO200AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1600V
  • Current - Average Rectified (Io): 1200A
  • Voltage - Forward (Vf) (Max) @ If: 1.45V @ 1500A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 25µs
  • Current - Reverse Leakage @ Vr: 150mA @ 1600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Chassis Mount
  • Package / Case: DO-200AB, B-PUK
  • Supplier Device Package: DO-200AB, B-PUK
  • Operating Temperature - Junction: -
封装: DO-200AB, B-PUK
库存5,184
1600V
1200A
1.45V @ 1500A
Standard Recovery >500ns, > 200mA (Io)
25µs
150mA @ 1600V
-
Chassis Mount
DO-200AB, B-PUK
DO-200AB, B-PUK
-
D56S45C PR
Infineon Technologies Industrial Power and Controls Americas

DIODE RECTFIER FAST 4100V 160A

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
库存2,224
-
-
-
-
-
-
-
-
-
-
-
UFS540GE3/TR13
Microsemi Corporation

DIODE GEN PURP 400V 5A DO215AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 400V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50ns
  • Current - Reverse Leakage @ Vr: 10µA @ 400V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-215AB, SMC Gull Wing
  • Supplier Device Package: DO-215AB
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-215AB, SMC Gull Wing
库存6,272
400V
5A
1.2V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
-
Surface Mount
DO-215AB, SMC Gull Wing
DO-215AB
-55°C ~ 175°C
HERA807G C0G
TSC America Inc.

DIODE, HIGH EFFICIENT, 8A, 800V,

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800V
  • Current - Average Rectified (Io): 8A
  • Voltage - Forward (Vf) (Max) @ If: 1.7V @ 8A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 80ns
  • Current - Reverse Leakage @ Vr: 10µA @ 800V
  • Capacitance @ Vr, F: 55pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2
  • Supplier Device Package: TO-220AC
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-220-2
库存7,936
800V
8A
1.7V @ 8A
Fast Recovery =< 500ns, > 200mA (Io)
80ns
10µA @ 800V
55pF @ 4V, 1MHz
Through Hole
TO-220-2
TO-220AC
-55°C ~ 150°C
AU3PDHM3_A/I
Vishay Semiconductor Diodes Division

DIODE AVALANCHE 200V 1.7A TO277A

  • Diode Type: Avalanche
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1.7A
  • Voltage - Forward (Vf) (Max) @ If: 1.9V @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 75ns
  • Current - Reverse Leakage @ Vr: 10µA @ 200V
  • Capacitance @ Vr, F: 72pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存3,536
200V
1.7A
1.9V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 200V
72pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SE70PJ-M3/86A
Vishay Semiconductor Diodes Division

DIODE GEN PURP 600V 2.9A TO277A

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 2.9A (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1.05V @ 7A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 2.6µs
  • Current - Reverse Leakage @ Vr: 20µA @ 600V
  • Capacitance @ Vr, F: 76pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-277, 3-PowerDFN
  • Supplier Device Package: TO-277A (SMPC)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: TO-277, 3-PowerDFN
库存3,072
600V
2.9A (DC)
1.05V @ 7A
Standard Recovery >500ns, > 200mA (Io)
2.6µs
20µA @ 600V
76pF @ 4V, 1MHz
Surface Mount
TO-277, 3-PowerDFN
TO-277A (SMPC)
-55°C ~ 175°C
SF15G R0G
TSC America Inc.

DIODE, SUPER FAST, 1A, 300V, 35N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 300V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.3V @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35ns
  • Current - Reverse Leakage @ Vr: 5µA @ 300V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AL, DO-41, Axial
  • Supplier Device Package: DO-204AL (DO-41)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: DO-204AL, DO-41, Axial
库存2,928
300V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 300V
10pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
S1MHM2G
TSC America Inc.

DIODE, 1A, 1000V, AEC-Q101, DO-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.1V @ 1A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 1.5µs
  • Current - Reverse Leakage @ Vr: 1µA @ 1000V
  • Capacitance @ Vr, F: 12pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 175°C
封装: DO-214AC, SMA
库存3,264
-
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 1000V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
UF1DLW RVG
TSC America Inc.

DIODE, ULTRA FAST, 1A, 200V, 20N

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950mV @ 1A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20ns
  • Current - Reverse Leakage @ Vr: 1µA @ 200V
  • Capacitance @ Vr, F: 40pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SOD-123W
  • Supplier Device Package: SOD123W
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: SOD-123W
库存6,288
200V
1A
950mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
1µA @ 200V
40pF @ 4V, 1MHz
Surface Mount
SOD-123W
SOD123W
-55°C ~ 150°C
STPS20SM60SG-TR
STMicroelectronics

DIODE SCHOTTKY 60V 20A D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 60V
  • Current - Average Rectified (Io): 20A
  • Voltage - Forward (Vf) (Max) @ If: 630mV @ 20A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 85µA @ 60V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: 150°C (Max)
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存5,856
60V
20A
630mV @ 20A
Fast Recovery =< 500ns, > 200mA (Io)
-
85µA @ 60V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
150°C (Max)
STB10150TR
SMC Diode Solutions

DIODE SCHOTTKY 150V D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 1.2V @ 10A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 150µA @ 150V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
库存6,000
150V
-
1.2V @ 10A
Fast Recovery =< 500ns, > 200mA (Io)
-
150µA @ 150V
-
Surface Mount
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
hot FMU-G16S
Sanken

DIODE GEN PURP 600V 5A TO220F-2L

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600V
  • Current - Average Rectified (Io): 5A
  • Voltage - Forward (Vf) (Max) @ If: 1.25V @ 5A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 400ns
  • Current - Reverse Leakage @ Vr: 50µA @ 600V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-220-2 Full Pack
  • Supplier Device Package: TO-220F-2L
  • Operating Temperature - Junction: -40°C ~ 150°C
封装: TO-220-2 Full Pack
库存63,636
600V
5A
1.25V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
400ns
50µA @ 600V
-
Through Hole
TO-220-2 Full Pack
TO-220F-2L
-40°C ~ 150°C
JANTX1N486B
Microsemi Corporation

DIODE GEN PURP 225V 200MA DO35

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 225V
  • Current - Average Rectified (Io): 200mA (DC)
  • Voltage - Forward (Vf) (Max) @ If: 1V @ 100mA
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 25nA @ 225V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-204AH, DO-35, Axial
  • Supplier Device Package: DO-35
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-204AH, DO-35, Axial
库存4,064
225V
200mA (DC)
1V @ 100mA
Fast Recovery =< 500ns, > 200mA (Io)
-
25nA @ 225V
-
Through Hole
DO-204AH, DO-35, Axial
DO-35
-65°C ~ 175°C
hot NRVBS3100T3G
ON Semiconductor

DIODE SCHOTTKY 100V 3A SMC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 790mV @ 3A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50µA @ 100V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: SMC
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: DO-214AB, SMC
库存29,700
100V
3A
790mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 100V
-
Surface Mount
DO-214AB, SMC
SMC
-65°C ~ 175°C
V5NM153HM3-I
Vishay General Semiconductor - Diodes Division

5A, 150V, DFN3820A TRENCH SKY RE

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 150 V
  • Current - Average Rectified (Io): 1.9A
  • Voltage - Forward (Vf) (Max) @ If: 970 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 150 V
  • Capacitance @ Vr, F: 290pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存41,952
150 V
1.9A
970 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 150 V
290pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
PSDH30120L1_T0_00001
Panjit International Inc.

DIODE GP 1.2KV 30A TO247AD-2

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 1200 V
  • Current - Average Rectified (Io): 30A
  • Voltage - Forward (Vf) (Max) @ If: 2.6 V @ 30 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 240 ns
  • Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: TO-247-2
  • Supplier Device Package: TO-247AD-2
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存4,380
1200 V
30A
2.6 V @ 30 A
Fast Recovery =< 500ns, > 200mA (Io)
240 ns
250 µA @ 1200 V
-
Through Hole
TO-247-2
TO-247AD-2
-55°C ~ 150°C
RB521G-40FHT2R
Rohm Semiconductor

DIODE SCHOTTKY 40V 100MA VMD2

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 40 V
  • Current - Average Rectified (Io): 100mA
  • Voltage - Forward (Vf) (Max) @ If: 610 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 40 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Surface Mount
  • Package / Case: SOD-723
  • Supplier Device Package: VMD2
  • Operating Temperature - Junction: 125°C (Max)
封装: -
Request a Quote
40 V
100mA
610 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
-
100 µA @ 40 V
-
Surface Mount
SOD-723
VMD2
125°C (Max)
V5NM63HM3-I
Vishay General Semiconductor - Diodes Division

5A, 60V, DFN3820A TRENCH SKY REC

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 65 V
  • Current - Average Rectified (Io): 2.4A
  • Voltage - Forward (Vf) (Max) @ If: 630 mV @ 5 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 10 µA @ 60 V
  • Capacitance @ Vr, F: 770pF @ 4V, 1MHz
  • Mounting Type: Surface Mount, Wettable Flank
  • Package / Case: 2-VDFN
  • Supplier Device Package: DFN3820A
  • Operating Temperature - Junction: -40°C ~ 175°C
封装: -
库存31,005
65 V
2.4A
630 mV @ 5 A
Fast Recovery =< 500ns, > 200mA (Io)
-
10 µA @ 60 V
770pF @ 4V, 1MHz
Surface Mount, Wettable Flank
2-VDFN
DFN3820A
-40°C ~ 175°C
RL206GP-BP
Micro Commercial Co

Interface

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 800 V
  • Current - Average Rectified (Io): 2A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 2 A
  • Speed: Standard Recovery >500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 5 µA @ 800 V
  • Capacitance @ Vr, F: 20pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: DO-204AC, DO-15, Axial
  • Supplier Device Package: DO-15
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
Request a Quote
800 V
2A
1 V @ 2 A
Standard Recovery >500ns, > 200mA (Io)
-
5 µA @ 800 V
20pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-15
-55°C ~ 150°C
JAN1N3595AUS-TR
Microchip Technology

SIGNAL OR COMPUTER DIODE

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 125 V
  • Current - Average Rectified (Io): 150mA
  • Voltage - Forward (Vf) (Max) @ If: 920 mV @ 100 mA
  • Speed: Small Signal =< 200mA (Io), Any Speed
  • Reverse Recovery Time (trr): 3 µs
  • Current - Reverse Leakage @ Vr: 2 nA @ 125 V
  • Capacitance @ Vr, F: 8pF @ 0V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: SQ-MELF, D
  • Supplier Device Package: D-5D
  • Operating Temperature - Junction: -65°C ~ 175°C
封装: -
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125 V
150mA
920 mV @ 100 mA
Small Signal =< 200mA (Io), Any Speed
3 µs
2 nA @ 125 V
8pF @ 0V, 1MHz
Surface Mount
SQ-MELF, D
D-5D
-65°C ~ 175°C
HS3B-V7G
Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 3A DO214AB

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 100 V
  • Capacitance @ Vr, F: 80pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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100 V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 100 V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SS18HE3-LTP
Micro Commercial Co

Interface

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 80 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 50 µA @ 80 V
  • Capacitance @ Vr, F: 35pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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80 V
1A
850 mV @ 1 A
Fast Recovery =< 500ns, > 200mA (Io)
-
50 µA @ 80 V
35pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
STB10100
SMC Diode Solutions

DIODE SCHOTTKY 100V D2PAK

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 300 µA @ 100 V
  • Capacitance @ Vr, F: 462pF @ 5V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
  • Supplier Device Package: D2PAK
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
库存984
100 V
-
750 mV @ 10 A
Fast Recovery =< 500ns, > 200mA (Io)
-
300 µA @ 100 V
462pF @ 5V, 1MHz
Surface Mount
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
D2PAK
-55°C ~ 150°C
SR320
Taiwan Semiconductor Corporation

DIODE SCHOTTKY 200V 3A DO201AD

  • Diode Type: Schottky
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: 100 µA @ 200 V
  • Capacitance @ Vr, F: -
  • Mounting Type: Through Hole
  • Package / Case: DO-201AD, Axial
  • Supplier Device Package: DO-201AD
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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200 V
3A
950 mV @ 3 A
Fast Recovery =< 500ns, > 200mA (Io)
-
100 µA @ 200 V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SMBT1416LT1
onsemi

SS SOT23 GP XSTR SPCL TR

  • Diode Type: -
  • Voltage - DC Reverse (Vr) (Max): -
  • Current - Average Rectified (Io): -
  • Voltage - Forward (Vf) (Max) @ If: -
  • Speed: -
  • Reverse Recovery Time (trr): -
  • Current - Reverse Leakage @ Vr: -
  • Capacitance @ Vr, F: -
  • Mounting Type: -
  • Package / Case: -
  • Supplier Device Package: -
  • Operating Temperature - Junction: -
封装: -
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-
-
-
-
-
-
-
-
-
-
-
HER601GP-TP
Micro Commercial Co

DIODE GEN PURP 50V 6A R-6

  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 50 V
  • Current - Average Rectified (Io): 6A
  • Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 6 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 50 V
  • Capacitance @ Vr, F: 100pF @ 4V, 1MHz
  • Mounting Type: Through Hole
  • Package / Case: R-6, Axial
  • Supplier Device Package: R-6
  • Operating Temperature - Junction: -55°C ~ 150°C
封装: -
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50 V
6A
1.1 V @ 6 A
Fast Recovery =< 500ns, > 200mA (Io)
50 ns
10 µA @ 50 V
100pF @ 4V, 1MHz
Through Hole
R-6, Axial
R-6
-55°C ~ 150°C